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https://doi.org/10.1016/0167-577x(90)90115-3
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Cite Journal: Materials Letters |  Publication Date: Jul 1, 1990 |
Photo-emission and electron-beam microscopy have been used to detect metallization failures in very large scale integrated (VLSI ) circuits associated with current leakage. These techniques, used as complementary tools can help reduce the debug time for failure analysis of semiconductor devices.
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