Failure Analysis Of Electronic Devices Research Articles

A General Equivalent Circuit Model for a Metal/Organic/Liquid/Metal System

A general equivalent circuit model for the metal/organic semiconductor (OSC)/liquid/metal system is presented. Each circuital element, representative of a physically observable phenomenon associated with the device working principle, is analyzed and discussed. Two case studies of electrochemical impedance spectroscopy of devices featuring NaCl (concentration of 0.1 M) and MilliQ water as liquid are reported, showing that both cases can be considered as a particular case of the general model presented in this paper. Experimental verification of the two practical cases is achieved by performing measurements onto electrodes coated by either an n-type or a p-type OSC deposited by sublimation or drop casting, respectively. The good agreement with the experimental data makes our model a useful tool for the characterization and failure analysis of electronic devices, such as water-gated transistors, electrophysiological interfaces, fuel cells, and others electrochemical systems.

The application of X‐rays in the failure analysis of electronic devices and systems

PurposeThe aim is to focus on the application of X‐rays in the failure analysis of electronic devices and systems, with an emphasis on X‐ray radiography and X‐ray spectroscopy.Design/methodology/approachThe theory behind X‐ray radiography and X‐ray spectroscopy is reviewed, and relevant case studies are used to illustrate the application of these techniques in the failure analysis of electronic devices and systems.FindingsExamples from recent case studies are given.Originality/valueThe paper provides an introduction to X‐ray methods for engineers working on the failure analysis of electronic devices and systems who may be unfamiliar with these techniques.

An ion and electron multibeam system for three-dimensional microanalysis

The failure analysis of electronic devices and deduction of the emission origins of dust particles in clean processes or in urban air require a precise three-dimensional microanalysis method. In order to investigate the new three-dimensional microanalysis for these samples with arbitrary shape and heterogeneity, we are developing a novel three-dimensional microanalyser consisting of a focused electron beam for Auger mapping and a gallium focused ion beam for cross-sectioning and for time-of-flight SIMS mapping. Our multibeam system is based on these three purposes. An ion and electron dual focused-beam apparatus was constructed to realize our concept. In this paper, the concept and the application of our analysis to a wire-pad contact region is described. The results of the elemental map in the contact interface show the superiority of our method. Copyright © 2000 John Wiley & Sons, Ltd.

Scanning near-field optical microscopy analyses of electronic devices

We discuss the usefulness of scanning near-field optical microscopy (SNOM) techniques for the optical failure analysis of electronic devices with a lateral resolution well below the diffraction limit. By imaging dielectric contrasts, defects within metallization layers can be located while optical near-field induced current/conductivity (ONIC/ONICond) analyses allow the characterization of device internal electronical properties with less than 50 nm resolution.

Failure analysis of encapsulated electronic devices by means of scanning ultrasonic microscopy technique

AbstractThe ultrasonic (also improperly known as “acoustic”) microscopy technique can be successfully applied to the nondestructive detection of package defects and damages in a wide range of electronic components. This paper presents three examples of application of this technique to the failure analysis of electronic devices that completely differ in package type, size, and application. The same analyses were also attempted by the x‐ray technique; a comparison of results of these two techniques is reported, and the advantages of the ultrasonic microscopy regarding applicability, sensitivity, and resolution are highlighted.

Failure analysis of electronic devices and materials : Yoshiyu'ki Ihara and Susumu Shinoda. Proceedings of the 21st Symposium on Reliability and Maintainability, Japan, 125 (June 1991)

Failure analysis of electronic devices and materials : Yoshiyu'ki Ihara and Susumu Shinoda. Proceedings of the 21st Symposium on Reliability and Maintainability, Japan, 125 (June 1991)

The scanning optical microscope: A powerful tool for failure analysis of electronic devices

This paper reviews the applications of the SOM ∗ (scanning optical microscope) to the failure analysis of electronic and optoelectronic devices. Description of the instrument operation principles and operative modes are given. Applications towards different devices and different component materials are presented.