Facile Chemical Vapor Deposition Method Research Articles

All‐Paper‐Based, Flexible, and Bio‐Degradable Pressure Sensor with High Moisture Tolerance and Breathability Through Conformally Surface Coating

AbstractHighlighted with bio‐degradability, paper‐based flexible pressure sensors receive significant attention in the field of wearable devices for a sustainable future. However, it remains a challenge to possess considerable sensing performance in high humidity and underwater environments, because its structure rapidly breaks down after the hydrophilic cellulose absorbs water. In this study, a facile chemical vapor deposition method is employed to conformally coat a thin hydrophobic layer onto the cellulose fibers, resulting in an encapsulating paper with high moisture tolerance. The well‐maintained porous structure reserves the superior breathability of the paper. A micro‐convex‐structured sensor layer impregnated with MXene serves as the sensing layer. As a result, an all‐paper‐based pressure sensor with high moisture tolerance and breathability is fabricated. This sensor features a broad sensing range (0–60 kPa), acceptable sensitivities (39.58 kPa−1 (0–1.01 kPa), 11.95 kPa−1 (1.01–60 kPa)), a low detection limit of ≈2.8 Pa, response and recovery time (93 and 69 ms), reliable hydrophobic breathability, and excellent repeatability (10 000 cycles). Moreover, this sensor can be safely worn on human skin and can monitor physiological signals in real‐time in different environments (including air, humid environments, and even underwater), providing a reliable, economical, and environmentally friendly solution for wearable technology.

Broadband and ascendant nonlinear optical properties of the wide bandgap material GaN nanowires

Gallium nitride (GaN) nanowire, as a type of wide bandgap nanomaterial, has attracted considerable interest because of its outstanding physicochemical properties and applications in energy storage and photoelectric devices. In this study, we prepared GaN nanowires via a facile chemical vapor deposition method and investigated their nonlinear absorption responses ranging from ultraviolet to near-infrared in the z-scan technology under irradiation by picosecond laser pulses. The experiment revealed that GaN nanowires exhibit remarkable nonlinear absorption characteristics attributed to their wide bandgap and nanostructure, including saturable absorption and reverse saturable absorption. When compared to bulk GaN crystals, the nanowires provide a richer and more potent set of nonlinear optical effects. Furthermore, we conducted an analysis of the corresponding electronic transition processes associated with photon absorption. Under high peak power density laser excitation, two-photon absorption or three-photon absorption dominate, with maximum modulation depths of 73.6%, 74.9%, 63.1% and 64.3% at 266 nm, 355 nm, 532 nm, and 1064 nm, respectively, corresponding to absorption coefficients of 0.22 cm/GW, 0.28 cm/GW, 0.08 cm/GW, and 2.82 ×10−4 cm3/GW2. At lower peak energy densities, GaN nanowires demonstrate rare and excellent saturation absorption characteristics at wavelength of 355 nm due to interband transitions, while saturable absorption is also observed at 532 nm and 1064 nm due to band tail absorption. The modulation depths are 85.2%, 41.9%, and 13.7% for 355 nm, 532 nm, and 1064 nm, corresponding to saturation intensities of 3.39 GW/cm2, 5.58 GW/cm2 and 14.13 GW/cm2. This indicates that GaN nanowires can be utilized as broadband optical limiters and high-performance pulse laser modulating devices, particularly for scarce ultraviolet optical limiters, and saturable absorbers for ultraviolet and visible lasers. Furthermore, our study demonstrates the application potential of wide bandgap nanomaterials in nonlinear optical devices.

Micropatterned Polymer Nanoarrays with Distinct Superwettability for a Highly Efficient Sweat Collection and Sensing Patch.

Wearable sweat sensor offers a promising means for noninvasive real-time health monitoring, but the efficient collection and accurate analysis of sweat remains challenging. One of the obstacles is to precisely modulate the surface wettability of the microfluidics to achieve efficient sweat collection. Here a facile initiated chemical vapor deposition (iCVD) method is presented to grow and pattern polymer nanocone arrays with distinct superwettability on polydimethylsiloxane microfluidics, which facilitate highly efficient sweat transportation and collection. The nanoarray is synthesized by manipulating monomer supersaturation during iCVD to induce controlled nucleation and preferential vertical growth of fluorinated polymer. Subsequent selective vapor deposition of a conformal hydrogel nanolayer results in superhydrophilic nanoarray floor and walls within the microchannel that provide a large capillary force and a superhydrophobic ceiling that drastically reduces flow friction, enabling rapid sweat transport along varied flow directions. A carbon/hydrogel/enzyme nanocomposite electrode is then fabricated by sequential deposition of highly porous carbon nanoparticles and hydrogel nanocoating to achieve sensitive and stable sweat detection. Further encapsulation of the assembled sweatsensing patch with superhydrophobic nanoarray imparts self-cleaning and water-proof capability. Finally, the sweat sensing patch demonstrates selective and sensitive glucose and lactate detection during the on-body test.

Integrating Lithium Sulfide as a Single Ionic Conductor Interphase for Stable All-Solid-State Lithium-Sulfur Batteries.

As a very prospective solid-state electrolyte, Li10GeP2S12 (LGPS) exhibits high ionic conductivity comparable to liquid electrolytes. However, severe self-decomposition and Li dendrite propagation of LGPS will be triggered due to the thermodynamic incompatibility with Li metal anode. Herein, by adopting a facile chemical vapor deposition method, an artificial solid electrolyte interphase composed of Li2S is proposed as a single ionic conductor to promote the interface stability of LGPS toward Li. The good electronic insulation coupled with ionic conduction property of Li2S effectively blocks electron transfer from Li to LGPS while enabling smooth passage of Li ions. Meanwhile, the generated Li2S layer remains good interface compatibility with LGPS, which is verified by the stable Li-plating/stripping operation for over 500h at 0.15mAcm-2. Consequently, the all-solid-state Li-S batteries (ASSLSBs) with a Li2S layer demonstrate superb capacity retention of 90.8% at 0.2mAcm-2 after 100cycles. Even at the harsh condition of 90 °C, the cell can deliver a high reversible capacity of 1318.8mAhg-1 with decent capacity retention of 88.6% after 100cycles. This approach offers a new insight for interface modification between LGPS and Li and the realization of ASSLSBs with stable cycle life.

Controllable Synthesis of Transferable Ultrathin Bi2Ge(Si)O5 Dielectric Alloys with Composition-Tunable High-κ Properties.

Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2SixGe1-xO5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2/SiO2 precursors. Moreover, their dielectric properties are highly composition-tunable, showing a record-high dielectric constant of >40 among CVD-grown 2D insulators. The vertically grown nature of Bi2GeO5 and Bi2SixGe1-xO5 enables polymer-free transfer and subsequent clean van der Waals integration as the high-κ encapsulation layer to enhance the mobility of 2D semiconductors. Besides, the MoS2 transistors using Bi2SixGe1-xO5 alloy as gate dielectrics exhibit a large Ion/Ioff (>108), ideal subthreshold swing of ∼61 mV/decade, and a small gate hysteresis (∼5 mV). Our work not only gives very few examples on controlled CVD growth of insulating dielectric alloys but also expands the family of 2D single-crystalline high-κ dielectrics.

Above-Room-Temperature Ferromagnetism in Copper-Doped Two-Dimensional Chromium-Based Nanosheets.

Two-dimensional ferromagnetic materials (2D-FMs) are expected to become ideal candidates for low-power, high-density information storage in next-generation spintronics devices due to their atomically ultrathin and intriguing magnetic properties. However, 2D-FMs with room-temperature Curie temperatures (Tc) are still rarely reported, which greatly hinders their research progress and practical applications. Herein, ultrathin Cu-doped Cr7Te8 FMs were successfully prepared and can achieve above-room-temperature ferromagnetism with perpendicular magnetic anisotropy via a facile chemical vapor deposition (CVD) method, which can be controlled down to an atomic thin layer of ∼3.4 nm. STEM-EDX quantitative analysis shows that the proportion of Cu to metal atoms is ∼5%. Moreover, based on the anomalous Hall effect (AHE) measurements in a six-terminal Hall bar device without any encapsulation as well as an out-of-plane magnetic field, the maximum Tc achieved ∼315 K when the thickness of the sample is ∼28.8 nm; even the ultrathin 7.6 nm sample possessed a near-room-temperature Tc of ∼275 K. Meanwhile, theoretical calculations elucidated the mechanism of the ferromagnetic enhancement of Cu-doped Cr7Te8 nanosheets. More importantly, the ferromagnetism of CVD-synthesized Cu-doped CrSe nanosheets can also be maintained above room temperature. Our work broadens the scope on room-temperature ferromagnets and their heterojunctions, promoting fundamental research and practical applications in next-generation spintronics.

Phase-Controlled Growth of 1T'-MoS2 Nanoribbons on 1H-MoS2 Nanosheets.

2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.

Achieving stable Zn metal anode via a hydrophobic and Zn2+-conductive amorphous carbon interface

High security and low cost enable aqueous zinc ion batteries (AZIBs) with huge application potential in large-scale energy storage. Nevertheless, the loathsome dendrite and side reactions of Zn anode are harmful to the cycling lifespan of AZIBs. Here, a new type of thin amorphous carbon (AC) interface layer (∼100 nm in thickness) is in-situ constructed on the Zn foil (Zn@AC) via a facile low-temperature chemical vapor deposition (LTCVD) method, which owns a hydrophobic peculiarity and a high Zn2+ transference rate. Moreover, this AC coating can homogenize the surface electric field and Zn2+ flux to realize the uniform deposition of Zn. Consequently, dendrite growth and side reactions are concurrently mitigated. Symmetrical cell achieves a dendrite-free Zn plating/stripping over 500 h with a low overpotential of 31 mV at 1 mA cm−2/1 mAh cm−2. Of note, the full cell with a MnO2/CNT cathode harvests a capacity retention of 70.0 % after 550 cycles at 1 A/g. In addition, the assembled flexible quasi-solid-state AZIBs display a stable electrochemical performance under deformation conditions and maintain a capacity of 76.5 mAh/g at 5 A/g after 300 cycles. This innovative amorphous carbon layer is expected to provide a new insight into stabilizing Zn anode.

High-performance silicon/graphite anode prepared by CVD using SiCl4 as precursor for Li-ion batteries

Graphite/silicon composite anode shows increased capacity but suffering from the volume expansion of Si during cycling. Herein, we reported a facile chemical vapor deposition (CVD) method using silicon tetrachloride (SiCl4) as precursor to deposit silicon into graphite to prepare composite as anode for Li-ion batteries. Si can be deposit as the nano-sized particles in the open spaces of graphite, and closely attached on the graphite flakes. Such architecture effectively increased the contact between Si and graphite, and provided semi-enveloping confinement for Si volume change. Typically, the composite anode with 10% Si could maintain above 600 mAh/g for 100 cycles.

Cobalt Phosphate-Modified (GaN)1–x(ZnO)x/GaN Branched Nanowire Array Photoanodes for Enhanced Photoelectrochemical Performance

Photoelectrochemical water splitting based on suitable catalysts has attracted wide attention as a promising strategy to utilize solar energy to produce clean and renewable hydrogen fuel. Herein, we reported cobalt phosphate-modified (GaN)1–x(ZnO)x/GaN nanowire arrays on a high-temperature conductive GaN substrate toward enhanced photoelectrochemical water splitting by a facile two-step Au-assisted chemical vapor deposition method. The highly conductive Si-doped GaN substrate is designed to serve as a current collector and epitaxial substrate to grow GaN nanowires at high temperature. Meanwhile, high density of branched (GaN)1–x(ZnO)x nanowires with a tunable band gap, strong visible-light absorption, and high catalytic activity is deposited on the surface of GaN nanowires to act as active components to harvest light toward the oxygen evolution reaction. Such multi-junction heterostructures effectively enhance wide spectral utilization and light absorption and simultaneously accelerate the separation of electrons and holes and the transfer of photogenerated electrons from (GaN)1–x(ZnO)x nanowires to the GaN substrate collector and Pt electrode. The photocurrent density of the (GaN)1–x(ZnO)x/GaN nanowire array photoanode can reach 37.5 μA cm–2 at 1.23 V vs reversible hydrogen electrode and could be further enhanced to 186 μA cm–2 by modifying the cobalt phosphate cocatalyst, showing promising potential in clean hydrogen production.

Large-area epitaxial growth of 2D ZrS2(1−x)Se2x semiconductor alloys with fully tunable compositions and bandgaps for optoelectronics

Bandgap engineering of transition metal dichalcogenides (TMDs) is significant for broadening their applications in electronics and optoelectronics devices. Herein, we report the new epitaxial growth of large-area uniform ZrS2(1−x)Se2x alloy films with fully tunable composition on sapphire substrates via a facile single-step chemical vapor deposition method. The ZrS2(1−x)Se2x alloys exhibit good single crystallinity and epitaxial quality, as well as uniform elemental distribution, and the epitaxial relationship with the substrate is determined to be ZrS2(1−x)Se2x (0001)[10-10]∥sapphire (0001)[11-20]. The bandgap of ZrS2(1−x)Se2x alloy exhibits a pronounced bowing behavior with continuously tunable bandgaps from 1.86 to 1.15 eV, depending on the Se composition. The ZrS2(1−x)Se2x-based photodetectors demonstrate a sensitive photoresponse to visible light with a fast response time of ∼100 µs, and their performances are significantly improved as the Se composition decreases. This work provides an efficient way to synthesize ZrS2(1−x)Se2x alloys with fully tunable bandgaps, providing great flexibility in designing TMD-based optoelectronic devices.

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS2 single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS2 domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101̅] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS2/Au(101) along the substrate high-symmetry directions (i.e., Au[101̅], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS2 films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS2 single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields.

A facile strategy to simultaneously increase surface roughness and reduce surface energy for the preparation of water-repellent, recyclable and self-cleaning expanded perlite

Although expanded perlite with abundant sources and low cost has been widely used in a diverse of different fields, it still requires multi-step processing to prepare desired functional materials, leading to complicated experimental procedures. And imparting new functionalities to expanded perlite with simple and effective methods remains a challenge. In this paper, a novel facile chemical vapor deposition method of in situ growing polysiloxane nanofilaments to simultaneously increase surface roughness and reduce surface energy is developed to prepare a water-repellent, recyclable and self-cleaning large granular expanded perlite (LGEP). Self-generation of surface roughness by low surface energy polysiloxane nanofilaments changes the surface wettability of the LGEP from hydrophilicity to hydrophobicity, showing an excellent water-repellent behavior. Relying on the imparted water repellency, the prepared LGEP can selectively remove organic solvents from water, and still maintain a stable sorption capacity after 15 consecutive cycles of sorption and desorption, holding a good recyclability. The prepared LGEP also exhibits an exceptional self-cleaning ability to remove surface particulate pollutants, which can provide a new design idea to synthesize perlite-based functionalized materials. These outstanding properties contribute to a broad range of the practical application of expanded perlite.

Ferromagnetic Order in Semiconducting Cr‐Doped α‐MnTe Nanosheets Grown by Chemical Vapor Deposition

AbstractFerromagnetic semiconductors (FMSs) have been extensively investigated to fulfill the prospect of simultaneous control spin and charge of electron over the past decades. However, it is still highly desirable to identify new ferromagnetic semiconductors with robust and reliable sign of coexistence of semi‐conductivity and ferromagnetism, especially for those ultrathin film systems with great potential for electrical gating. Here, ultrathin Cr‐doped α‐MnTe nanosheets can be readily prepared via a facile chemical vapor deposition (CVD) method, which sustain the crystal structure of parent α‐MnTe but exhibit utterly changed electrical and magnetic properties. Derived from anomalous Hall measurements, the CVD‐grown sample presented a robust out‐of‐plane ferromagnetic order with Curie temperature of ≈210 K and a large coercivity >3.5 T at 2 K. Additionally, Cr‐doped α‐MnTe nanosheets show tunable ferromagnetism and different gating effects with varied thicknesses. The theoretical calculation is performed to explain the origin of its ferromagnetism and semi‐conductivity, probably attributed to the specific antiferromagnetic arrangement of each Mn/Cr plane and non‐zero net magnetic moment with Cr introducing. The work sheds new light on the development of dilute ferromagnetic semiconductors and spintronics.

Robust Transparent Titanium Dioxide Coating Based on the AACVD Process for Anticorrosion Marine Exploration.

Transparent and robust titanium dioxide (TiO2) coatings were prepared by the facile aerosol-assisted chemical vapor deposition (AACVD) method. The effects of deposition temperature and precursor concentration on the crystal growth and optical properties of TiO2 coating were investigated. It is found that the obtained TiO2 coating has strong adhesion to the substrate, which can effectively avoid mechanical scratches and wear by sharp objects, adhesive tape and steel wool. Besides, in the marine corrosion protection test, both the open circuit potential and electrochemical impedance of TiO2 coating immersed in artificial seawater for different times are greater than those of the bare S420 steel substrate. Particularly, the high-frequency phase angle of the TiO2 coating increases, and the impedance value at low frequency of 0.10 Hz is about 2 orders of magnitude higher than that of the bare S420 substrate. In addition, the significant decrease of corrosion products on the surface further proves that the deposited TiO2 coating exhibits better corrosion inhibition and excellent anticorrosion properties, which is expected in application of the surface coating protection of the marine exploration lens.

Gallium doping-assisted giant photoluminescence enhancement of monolayer MoS2 grown by chemical vapor deposition

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted enormous research interest owing to their unique photo-physics and excellent optoelectronic properties. However, the ubiquitous defects in 2D TMDCs greatly affect the optoelectronic properties of them. For example, the prototype molybdenum disulfide (MoS2) exhibits very poor photoluminescence (PL) due to the high defect density. Here, we report a defect repair strategy based on a facile one-step chemical vapor deposition method that achieves two orders of magnitude enhancement in photoluminescence (PL) and one order of magnitude prolonging in carrier lifetime. Interestingly, we can controllably synthesize Ga-doped samples with different morphologies by adjusting the ratio of precursors, and the PL intensities at the central and edge regions are quite different. Combined with scanning transmission electron microscopy characterization, we systematically elucidate this growth behavior and obtain a more precise defect repair strategy. This strategy of selectively repairing the defects of monolayer MoS2 by gallium doping to achieve significant enhancement of photoluminescence may provide a facile and feasible method for the regulation of optoelectronic properties of 2D materials.

Phase-controlled synthesis of SnS2 and SnS flakes and photodetection properties

Two-dimensional (2D) layered tin sulfide compounds including SnS2 and SnS have attracted increasing attention due to their great potential application in the fields of optoelectronics and energy storage. However, device development has been delayed by the lack of capabilities to synthesize large-scale and high-quality 2D tin sulfide. Here, a phase-controlled synthesis of SnS2 and SnS flakes with lateral size over 100 μm was successfully realized via a facile chemical vapor deposition method. The lateral size of flakes and phase transformation of SnS2 to SnS can be tuned via changing the synthesis temperature. Compared to the formation of the SnS2 phase at relative low temperature (<750 °C), the SnS phase is favorable at higher temperature. The phototransistor based on the as-prepared SnS2 and SnS exhibits excellent photoresponse to 405 nm laser, including a high responsivity (1.7 × 106 mA W−1), fast response rates (rise/decay time of 13/51 ms), an outstanding external quantum efficiency (5.3 × 105%), and a remarkable detectivity (6.24 × 1012 Jones) for SnS2-based phototransistor, and these values are superior to the most reported SnS2 based photodetectors. Although the responsivity (3390 mA W−1) and detectivity (1.1 × 1010 Jones) of SnS-based device is lower than that of the SnS2 phototransistor, it has a faster rise/decay time of 3.10/1.59 ms. This work provides a means of tuning the size and phase of 2D layered tin sulfide, and promotes the application of SnS2 in high-performance optoelectronic devices.

Boosting the Visible Light Photocatalytic Activity of ZnO through the Incorporation of N-Doped for Wastewater Treatment

In the present work, we prepared N-doped ZnO by a facile chemical vapor deposition method and used it for the degradation of wastewater containing noxious rose bengal (RB) dye under visible-light stimulation. The as-prepared N-doped ZnO and the undoped ZnO (used as a control sample) were characterized by numerous spectroscopic and microscopic methods. These analyzing results confirmed the successful formation of the N-doped ZnO compound and it could be implemented for wastewater treatment. Interestingly, the N-doped ZnO material confirmed the maximum RB dye degradation efficiency (96.90%) and was shown to be 154% more efficient than undoped ZnO (62.95%) within 100 min of visible-light irradiation. The bandgap energy was considerably decreased after the incorporation of N onto the ZnO matrix compared to undoped ZnO. The improved photocatalytic performance is because of the reduction of bandgap energy, which suppressed the electron–hole pair recombination. In addition, a plausible photodegradation mechanism of RB dye was discussed employing N-doped ZnO under visible light. The findings show that our as-synthesized product can be used to eliminate contaminants, which provides a new avenue for effective implications.

Chemical Vapor Deposition of Ferrimagnetic Fe3O4 Thin Films

Ultrathin magnetic materials with room-temperature ferromagnetism/ferrimagnetism hold great potential in spintronic applications. In this work, we report the successful controllable growth of Fe3O4 thin films using a facile chemical vapor deposition method. Room-temperature ferrimagnetism was maintained in the as-grown Fe3O4 thin films down to 4 nm. Raman spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy analysis were conducted to reveal the structure and quality of the Fe3O4 film. Magnetization measurement showed ferrimagnetic hysteresis loops in all Fe3O4 thin films. A saturation magnetization of 752 emu/cm3 was observed for the 4 nm Fe3O4 film, which was higher than that of bulk Fe3O4 materials (480 emu/cm3). Additionally, the Verwey transition at ~120 K was visible for the Fe3O4 thin films. This work provides an alternative method of synthesizing ferrimagnetic ultrathin films for electronic, spintronic, and memory device applications.

Growth, Raman Scattering Investigation and Photodetector Properties of 2D SnP.

As an important metal phosphides material, 2D tin phosphides (SnPx 0< x≤3) have been theoretically predicted to have intriguing physicochemical properties and potential applications in electronics, optoelectronics, and energy fields. However, the synthesis of high-quality 2D SnP single crystal has not been reported due to the lack of efficiency and reliable growth method. Here, a facile atmospheric pressure chemical vapor deposition (APCVD) method is developed to realize the growth of high-quality 2D SnP nanosheets, by employing tin (Sn) foil as both liquid metal substrates and reaction precursor. Temperature-dependent and angle-resolved polarization Raman spectra observed Raman peaks located at 142.6, 303.3, and 444.2 cm-1 are concluded to belong to A1g mode, which are consistent with the theoretical calculation results. Moreover, the field-effect transistor (FET) devices based on SnP nanosheets show a typical n-type characteristic with an on/off ratio of 103 at 200 K. SnP nanosheets also demonstrate excellent photoresponse performance under the illumination of 473, 532, and 639nm lasers, which can be tuned by Vgs , Vds , and light power density. It is believed that these findings can provide the first-hand experimental information for the future study of 2D SnP nanosheets.