Fabrication of zinc oxide (ZnO) based optoelectronic devices requires stable and reproducible p-type nanostructures. Keeping this fact in view, high-quality Bismuth (Bi) doped p-type ZnO thin films have been deposited on the n-Si substrate using sol-gel spin coating technique. Hall effect and hot point probe measurement confirm that deposited Bi doped ZnO film has p-type conductivity with a resistivity of 0.82 Ω-cm, carrier concentration of 1.1 × 1018 cm−3 and mobility of 6.9 cm2/ V-s at room temperature. A p-n homojunction has been fabricated by making use of this p-type ZnO and intrinsic n-type ZnO. The I-V characteristics of the fabricated p-n junction clearly show the rectifying nature. PL analysis reveals that the fabricated device exhibits deep level emission in yellow and red emission bands ascertaining its potential application in optoelectronics.
Read full abstract