Fabrication Of Diodes Research Articles

A well-performed green-emitting Lu1.5Ca1.5Al3.5Si1.5O12:Ce3+ garnet phosphor for high-quality pc-WLEDs

High-brightness and thermally-stable broadband green-emitting phosphors are highly demanded for the fabrication of high-quality phosphor-converted white light-emitting diodes (pc-WLEDs) with high color rendering index (CRI) and low correlated color temperature (CCT). Herein, we report on the synthesis, luminescent properties, thermal stability and application of a novel highly efficient green-emitting Lu1.5Ca1.5Al3.5Si1.5O12:Ce3+ garnet-type phosphor for blue-chip-pumped high-CRI pc-WLEDs. A series of Lu1.5Ca1.5Al3.5Si1.5O12:Ce3+ green phosphors doped with various Ce3+ concentrations (0.5-4 mol%) have been prepared by a conventional high-temperature solid-state reaction approach. Impressively, the composition-optimized Lu1.5Ca1.5Al3.5Si1.5O12:2%Ce3+ sample exhibits a broad excitation band in the 400-500 nm spectral range with an excitation peak around 451 nm, and it gives rise to a bright broad green emission band in the 470-700 nm wavelength region (emission peak: 533 nm; bandwidth: 108 nm) with CIE color coordinates of (0.3361, 0.5640). Notably, high luminescence efficiency is obtained for Lu1.5Ca1.5Al3.5Si1.5O12:2%Ce3+ phosphor (internal quantum efficiency: 92.2%; external quantum efficiency: 50.7%). Moreover, it is also found that Lu1.5Ca1.5Al3.5Si1.5O12:2%Ce3+ shows excellent resistance to thermal quenching, while its emission intensity at 423 K remains 76% of the initial value at room temperature. Amazingly, the color stability of Lu1.5Ca1.5Al3.5Si1.5O12:2%Ce3+ is also outstanding, and only a very small chromaticity shift (3.99 × 10−3) is observed at 423 K. A high-performance pc-WLED device has been fabricated by using a 450 nm blue-emitting LED chip and as-prepared Lu1.5Ca1.5Al3.5Si1.5O12:2%Ce3+ green phosphor as well as commercial CaAlSiN3:Eu2+ red phosphor. Such device produces a bright warm-white emission under 280 mA driving current, demonstrating super CIE chromaticity coordinates (0.3870, 0.3818), high CRI of 93.8, low CCT of 3865 K, and high luminous efficacy (51.86 lmW-1).

Effect of magnesium doping on NiO hole injection layer in quantum dot light-emitting diodes

Abstract This study reports on the fabrication of quantum dot light-emitting diodes (QLEDs) with an ITO/Ni1−x Mg x O/SAM/TFB/QDs/ZnMgO/Al structure and investigates the effects of various Mg doping concentrations in NiO on device performance. By doping Mg into the inorganic hole-injection layer NiO (Ni1−x Mg x O), we improved the band alignment with the hole-injection layer through band tuning, which enhanced charge balance. Optimal Mg doping ratios, particularly a Ni0.9Mg0.1O composition, have demonstrated superior device functionality, underscoring the need for fine-tuned doping levels. Further enhancements were achieved through surface treatments of Ni0.9Mg0.1O with UV-Ozone (UVO) and thermal annealing (TA) of the ZnMgO electron transport layer. Consequently, by optimizing Mg-doped NiO in QLED devices, we achieved a maximum external quantum efficiency of 8.38 %, a brightness of 66,677 cd/m2, and a current efficiency of 35.31 cd/A, indicating improved performance. The integration of Mg-doped NiO into the QLED structure resulted in a device with superior charge balance and overall performance, which is a promising direction for future QLED display technologies.

Effects of NiO doping and trench wall tilt on Ga2O3 PiN diodes performance

Gallium Oxide (Ga2O3) is a promising material for next-generation power semiconductors due to its wide bandgap (∼4.9 eV), high Baliga's figure of merit (FOM) (3444 W/cmK), and high breakdown field (Ec, 8 MV/cm). To achieve high blocking and low leakage current, research has been conducted on PN heterojunctions and bevel structures. In this paper, we performed simulations using Sentaurus TCAD to investigate the impact of NiO doping concentration and NiO's trench tilt angle on the electrical characteristics of NiO/Ga2O3 PiN diodes with trench NiO. As the NiO doping concentration increased, the resistance decreased from 21.5 to 7.5 mΩcm2, and we observed the expansion of depletion from NiO to the NiO/Ga2O3 interface. Furthermore, we confirmed a reduction in resistance and a change in breakdown voltage with an increase in NiO trench tilt. By understanding the optimal angle to mitigate the concentration of high electric fields in the edge region, we anticipate the fabrication of stable Ga2O3 PiN diodes.

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon

Recent Advances in Fluorescent Polyimides.

Polyimide (PI) refers to a type of high-performance polymer containing imide rings in the main chain, which has been widely used in fields of aerospace, microelectronic and photonic devices, gas separation technology, and so on. However, traditional aromatic PIs are, in general, the inefficient fluorescence or even no fluorescence, due to the strong inter- and intramolecular charge transfer (CT) interactions causing unavoidable fluorescence quenching, which greatly restricts their applications as light-emitting functional layers in the fabrication of organic light-emitting diode (OLED) devices. As such, the development of fluorescent PIs with high fluorescence quantum efficiency for their application fields in the OLED is an important research direction in the near future. In this review, we provide a comprehensive overview of fluorescent PIs as well as the methods to improve the fluorescence quantum efficiency of PIs. It is anticipated that this review will serve as a valuable reference and offer guidance for the design and development of fluorescent PIs with high fluorescence quantum efficiency, ultimately fostering further progress in OLED research.

Vertical Current Transport in Monolayer MoS<sub>2</sub> Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoO<sub>x</sub> Films

In this paper, we report on the growth of highly uniform MoS2 films, mostly consisting of monolayers, on SiC surfaces with different doping levels (n- SiC epitaxy, ~1016 cm-3, and n+ SiC substrate, ~1019 cm-3) by sulfurization of a pre-deposited ultra-thin MoOx films. MoS2 layers are lowly strained (~0.12% tensile strain) and highly p-type doped (<Nh>≈4×1019 cm−3), due to MoO3 residues still present after the sulfurization process. Nanoscale resolution I-V analyses by conductive atomic force microscopy (C-AFM) show a strongly rectifying behavior for MoS2 junction with n- SiC, whereas the p+ MoS2/n+ SiC junction exhibits an enhanced reverse current and a negative differential behavior under forward bias. This latter observation, indicating the occurrence of band-to-band-tunneling from the occupied states of n+ SiC conduction band to the empty states of p+ MoS2 valence band, is a confirmation of the very sharp hetero-interface between the two materials. These results pave the way to the fabrication of ultra-fast switching Esaki diodes on 4H-SiC.

Carbon nanotube thin film pn junction diode with high-temperature tolerance using chemical dopants

Abstract Chemical doping of carbon nanotubes (CNTs) by adsorption with high-temperature-tolerant molecules is required for the fabrication of various types of electronic devices for their performance maintenance under harsh thermal conditions during the fabrication and operation processes. Here, we demonstrate the fabrication of CNT thin film pn junction diodes using a combination of 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile as a p-dopant and a complex salt of potassium hydroxide and benzo-18-crown-6 ether as an n-dopant. The fabricated devices demonstrated a reasonably stable rectifying behavior, even after heating to 200 °C for 300 min.

Tailoring the opto-electronic properties of SnS thin films by indium doping and fabrication of heterojunction diodes

This study comprehensively investigates the effect of Indium (In) doping on the structural, morphological, and optoelectronic properties of tin mono-sulfide (SnS) thin films deposited using co-evaporation. X-ray diffraction studies identified the orthorhombic phase of SnS. Raman analysis confirmed the formation of SnS by co-evaporation. Morphological analysis revealed uniform coating of the films, a transition from rod-like to regular grain-like structures with increased In doping. A systematic reduction in Sn concentration, with the increase in In is observed in EDS, indicating the substitutional doping of In. The decrease in root mean square roughness with In incorporation suggests smoother film surfaces. The films demonstrated a pronounced improvement in optoelectronic properties, with a notable increase in the absorption coefficient and a bandgap reduction from 2.18 eV to 1.74 eV, resulting from In doping. A significant enhancement in electrical characteristics is observed, including a 140 % increase in conductivity and a systematic rise in carrier concentration with higher In doping levels. Heterojunction devices are fabricated with structure <FTO/Al:ZnO/In:SnS/Ag> having a series resistance of 29.9 Ω having an ideality factor of 2.8.

Study of deposition temperature effect on spray-deposited copper oxide thin films and its schottky diodes

Due to its ideal optical and electrical properties for upcoming electronic devices, Cu2O is commonly regarded as one of the most promising p-type oxides. Copper (Cu) rapidly deposits mixed phases of its oxides. This article describes the spray deposition method for developing copper oxide thin films at temperatures between 200 and 400 °C on glass substrates coated with ITO. Through optimization of the deposition temperature, Cu2O-rich phases were attained in the copper oxide films, typically around 300 °C. A Cu-rich phase was seen at 200 °C deposition temperature, and this phase progressively diminished at higher temperatures. At 400 °C, the CuO phase began to enrich the films in the meantime. Analysis using an x-ray diffraction (XRD) verified the existence of Cu2O phases (111), (200), and (220). The crystallites were discovered to be between 17.49 and 20.32 nm in size for the films deposited between 300 and 400 °C. The x-ray Photoelectron Spectroscopy (XPS) identifies Cu and oxygen as the main components. Furthermore, it is demonstrated that the deposition temperature significantly affects the copper’s oxidation state. The Atomic Force Microscopy (AFM) investigation showed that as the temperature increased, surface roughness decreased. As the deposition temperature increased, the energy band gap of the deposited films widened from 1.67 to 2.85 eV, as observed by the UV–vis-NIR spectrophotometer. Moreover, the fabrication of Schottky diodes with Cu metal contacts is also reported. These fabricated diodes showed a proportionate rise in barrier height with increasing deposition temperature.

Defects in Nitrogen-Doped ZnO Nanoparticles and Their Effect on Light-Emitting Diodes.

In this study, the effect of defects on the acceptor properties of nitrogen-doped ZnO nanoparticles (NPs) was investigated through the fabrication of light-emitting diodes (LEDs). Nitrogen-doped ZnO NPs were synthesized by an arc discharge in-gas evaporation method and post-annealed at 800 °C in an oxygen and nitrogen atmosphere. The annealed ZnO NPs were characterized by X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. It was found that the annealing of nitrogen-doped ZnO NPs in a nitrogen environment increased the number of zinc vacancies, while annealing in an oxygen environment increased the number of oxygen vacancies due to nitrogen desorption. The output characteristics of LEDs fabricated with oxygen-annealed NPs were degraded, while those with nitrogen-annealed NPs were significantly improved. From these results, the contribution of zinc vacancies to acceptor formation in ZnO NPs was confirmed for the first time in actual pn junction devices.

화합물 반도체 기반의 유연 발광소자 및 디스플레이 제작

This article presents a review of research activities over past decades focused on the fabrication of flexible light-emitting diodes (LEDs) and micro-LED displays. LEDs exhibit excellent material characteristics, including high radiative recombination rates, high carrier mobility, and ultra-long-term stability. These features make LEDs promising candidates for not only the future metaverse display but flexible display applications. However, the brittleness of compound semiconductor thin films poses challenges for creating deformable LED devices. Consequently, significant efforts have been dedicated to imparting deformability to LED devices and displays. We initially discuss a display prepared using a nanowire-assembly process, followed by a strategy involving thin film LEDs for flexible device fabrication. Vertical nanowire LED arrays are presented, along with a discussion of their advantages for flexible devices and displays. Furthermore, we review the selective-area epitaxy of vertical nanowire LED arrays. Finally, we briefly introduce the assembly methods of LEDs onto backplane circuits, addressing several important issues, including the misalignment of LED transfers onto backplane circuits. We conclude with personal remarks on the challenges and future perspectives for research on flexible micro-LED displays.

Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3 epilayers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). P-type conductivity Ga2O3 epilayer, confirmed by Hall effect analysis, was achieved by phosphorus (P) ion implantation followed with a rapid thermal annealing (RTA) process. This p-Ga2O3 epilayer reveals a significant reduction in resistivity (<106) compared to undoped Ga2O3, demonstrating the successful inclusion and activation of P within the crystal lattice. X-ray diffraction analysis shows that the Ga2O3 epilayers were grown in high crystal quality. Although the crystallinity of Ga2O3 was slightly degraded after P ion implantation, the structure was recovered to high-quality crystal after RTA treatment. For the device structure, p-type Ga2O3 was formed first, followed n-type Ga2O3 regrowth to create a pn junction diode. The obtained results demonstrate a built-in voltage of 4.8 V, 4.2 V, and 4.308 V from simulation, fabricated pn diodes measured by I–V and C–V, respectively. A high breakdown voltage of 900 V was also obtained for the lateral pn diode grown on sapphire substrate. As concerning temperature stability, I–V curves of Ga2O3 pn diode were measured from 25oC to 150oC in steps of 25 °C. At elevated temperatures, for both forward and reverse biases, consecutive increasing currents were measured. These could be resulted from dominant diffusion and drift currents over recombination current at a given bias. In addition, the reverse current saturated (@V > 3kT/q) and remained very low at 2✕10−8 A, as the diode operated at 150oC. The behavior could be due to Ga2O3 being a wide bandgap material.

Vacuum-Boosting Precise Synthetic Control of Highly Bright Solid-State Carbon Quantum Dots Enables Efficient Light Emitting Diodes.

Carbon quantum dots (C-dots) have emerged as efficient fluorescent materials for solid-state lighting devices. However, it is still a challenge to obtain highly bright solid-state C-dots because of the aggregation caused quenching. Compared to the encapsulation of as-prepared C-dots in matrices, one-step preparation of C-dots/matrix complex is a good method to obtain highly bright solid-state C-dots, which is still quite limited. Here, an efficient and controllable vacuum-boosting gradient heating approach is demonstrated for in situ synthesis of a stable and efficient C-dots/matrix complex. The addition of boric acid strongly bonded with urea, promoting the selectivity of the reaction between citric acid and urea. Benefiting from the high reaction selectivity and spatial-confinement growth of C-dots in porous matrices, in situ synthesize C-dots bonded can synthesized dominantly with a crosslinked octa-cyclic compound, biuret and cyanuric acid (triuret). The obtained C-dots/matrix complex exhibited bright green emission with a quantum yield as high as 90% and excellent thermal and photo stability. As a proof-of-concept, the as-prepared C-dots are used for the fabrication of white light-emitting diodes (LEDs) with a color rendering index of 84 and luminous efficiency of 88.14lm W-1, showing great potential for applications in LEDs.

A Conjugated Carboranyl Main Chain Polymer with Aggregation-Induced Emission in the Near-Infrared.

Materials exhibiting aggregation-induced emission (AIE) are both highly emissive in the solid state and prompt a strongly red-shifted emission and should therefore pose as good candidates toward emerging near-infrared (NIR) applications of organic semiconductors (OSCs). Despite this, very few AIE materials have been reported with significant emissivity past 700 nm. In this work, we elucidate the potential of ortho-carborane as an AIE-active component in the design of NIR-emitting OSCs. By incorporating ortho-carborane in the backbone of a conjugated polymer, a remarkable solid-state photoluminescence quantum yield of 13.4% is achieved, with a photoluminescence maximum of 734 nm. In contrast, the corresponding para and meta isomers exhibited aggregation-caused quenching. The materials are demonstrated for electronic applications through the fabrication of nondoped polymer light-emitting diodes. Devices employing the ortho isomer achieved nearly pure NIR emission, with 86% of emission at wavelengths longer than 700 nm and an electroluminescence maximum at 761 nm, producing a significant light output of 1.37 W sr-1 m-2.

Fabrication of plasmonic junction diodes based on Ag@ZnO core-shell nanostructures

In this study, Ag nanoparticles and Ag@ZnO core–shell nanostructures were prepared using the wet chemical method and these nanostructures were used for Ag@ZnO/p-Si diode fabrication. Structural, morphological, and optical characterization techniques were applied for Ag@ZnO core–shell NPs prepared by using different molarity of precursor ZnCl2 (10 mM, 20 mM, 30 mM) and showed that the effect of increasing precursor amount on these physical properties of nanoparticles is important. For Ag@ZnO, transmission electron microscopy shows an average diameter of Ag nanoparticles was 51.32 nm and Ag@ZnO core–shell nanostructures were found to be between 31 and 92 nm. The UV-visible absorbance also shows significant plasmonic resonance for NPs, with a slight red shift increasing precursor molarity. The peaks are found to be from 412 nm to 432 nm. This redshift in surface plasmon absorption of Ag@ZnO core–shell structures are consistent with XPS survey. The current–voltage (I-V) characteristic curves of heterojunction diodes were taken in the dark and at room temperature, and it was observed that they showed a rectifying feature. Ideality factor and barrier height values have been found between 2.14 and 3.87, and 0.56 and 0.78, respectively. The results revealed that Ag@ZnO was successfully synthesized and can be used in rectification applications.

Thermally Induced Phase Separation of the PEDOT:PSS Layer for Highly Efficient Laminated Polymer Light-Emitting Diodes.

Among various conductive polymers, the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) film has been studied as a promising material for use as a transparent electrode and a hole-injecting layer in organic optoelectronic devices. Due to the increasing demand for the low-cost fabrication of organic light-emitting diodes (OLEDs), PEDOT:PSS has been employed as the top electrode by using the coating or lamination method. Herein, a facile method is reported for the fabrication of highly efficient polymer light-emitting diodes (PLEDs) based on a laminated transparent electrode (LTE) consisting of successive PEDOT:PSS and silver-nanowire (AgNW) layers. In particular, thermally induced phase separation (TIPS) of the PEDOT:PSS film is found to depend on the annealing temperature (Tanneal) during preparation of the LTE. At Tanneal close to the glass transition temperature of the PSS chains, a PSS-rich phase with a large number of PSS- molecules enhances the work function of the PEDOT:PSS on the glass-side surface relative to the air side. By using the optimized LTEs, bidirectional laminated PLEDs are obtained with a total external quantum efficiency of 2.9% and a turn-on voltage of 2.6 V, giving a comparable performance to that of the reference bottom-emitting PLED based on a costly evaporated metal electrode. In addition, an analysis of the angular characteristics, including the variation in the electroluminescence spectra and the change in luminance according to the emission angle, indicates that the laminated PLED with the LTE provides a more uniform angular distribution regardless of the direction of emission. Detailed optical and electrical analyses are also performed to evaluate the suitability of LTEs for the low-cost fabrication of efficient PLEDs.

Perfluorooctanoic acid interface modification enabling efficient true-blue perovskite light-emitting diodes and air-processing compatibility

The pure-bromide quasi-2D perovskite has shown advantages in fabrication of blue perovskite light-emitting diodes (PeLEDs) due to its relatively good color stability and capability of moisture resistance. However, the performances of efficiency and luminance of pure-bromide quasi-2D PeLEDs with true-blue (470 nm−480 nm) emission are still inferior. Here, we show a interfacial modification strategy of involving perfluorooctanoic acid (PFOA) to a hole transport layer of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), to improve the performances of the true-blue PeLEDs. The PFOA regulates the molecular conformation of PEDOT:PSS, forming ordered PEDOT domains that improves the carrier transport and a more favorable band alignment with the perovskite emissive layers. The achieved true-blue PeLEDs show peak EQE of 6.86 % and maximum luminance of 854.10 cd/m2 at wavelength of 478 nm, which are the record values for the pure-bromide quasi-2D PeLEDs in true-blue region. Moreover, owing to the hydrophobic fluorine-carbon (C-F) chains of PFOA, we successfully fabricate the blue PeLEDs in air condition without inert gas protection. This work paves the way for commercial applications in next-generation display technologies.

Direct Evidence of the Effect of Water Molecules Position in the Spectroscopy, Dynamics, and Lighting Performance of an Eco-Friendly Mn-Based Organic-Inorganic Metal Halide Material for High-Performance LEDs and Solvent Vapor Sensing.

Luminescent Mn(II)-based organic-inorganic hybrid halides have drawn attention as potential materials for sensing and photonics applications. Here, the synthesis and characterization of methylammonium (MA) manganese bromide ((MA)nBrxMn(H2O)2, (n = 1, 4 and x = 3, 6)) with different stoichiometries of the organic cation and inorganic counterpart, are reported. While the Mn2+ centers have an octahedral conformation, the two coordinating water molecules are found either in cis (1) or in trans (2) positions. The photophysical behavior of 1 reflects the luminescence of Mn2+ in an octahedral environment. Although Mn2+ in 2 also has octahedral coordination, at room temperature dual emission bands at ≈530 and ≈660nm are observed, explained in terms of emission from Mn2+in tetragonally compressed octahedra and self-trapped excitons (STEs), respectively. Above the room temperature, 2 shows quasi-tetrahedral behavior with intense green emission, while at temperatures below 140K, another STE band emerges at 570nm. Time-resolved experiments (77-360K) provide a clear picture of the excited dynamics. 2 shows rising components due to STEs formation equilibrated at room temperature with their precursors. Finally, the potential of these materials for the fabrication of color-tunable down-converted light-emitting diode (LED) and for detecting polar solvent vapors is shown.

Carrier density control of Sb-doped rutile-type SnO2 thin films and fabrication of a vertical Schottky barrier diode

We report on the control of carrier density in r-SnO2 thin films grown on isostructural r-TiO2 substrates by doping with Sb aiming for power-electronics applications. The carrier density was tuned within a range of 3 × 1016–2 × 1019 cm−3. Two types of donors with different activation energies, attributed to Sb at Sn sites and oxygen vacancies, are present in the thin films. Both activation energies decrease as the concentration of Sb increases. A vertical Schottky barrier diode employing a Sb:r-SnO2/Nb:r-TiO2 exhibits a clear rectifying property with a rectification ratio of 103 at ±1 V.

B‒N covalent bond-involved π-extension of multiple resonance emitters enables high-performance narrowband electroluminescence.

Multi-boron-embedded multiple resonance thermally activated delayed fluorescence (MR-TADF) emitters show promise for achieving both high color-purity emission and high exciton utilization efficiency. However, their development is often impeded by a limited synthetic scope and excessive molecular weights, which challenge material acquisition and organic light-emitting diode (OLED) fabrication by vacuum deposition. Herein, we put forward a B‒N covalent bond-involved π-extension strategy via post-functionalization of MR frameworks, leading to the generation of high-order B/N-based motifs. The structurally and electronically extended π-system not only enhances molecular rigidity to narrow emission linewidth but also promotes reverse intersystem crossing to mitigate efficiency roll-off. As illustrated examples, ultra-narrowband sky-blue emitters (full-width at half-maximum as small as 8nm in n-hexane) have been developed with multi-dimensional improvement in photophysical properties compared to their precursor emitters, which enables narrowband OLEDs with external quantum efficiencies (EQEmax) of up to 42.6%, in company with alleviated efficiency decline at high brightness, representing the best efficiency reported for single-host OLEDs. The success of these emitters highlights the effectiveness of our molecular design strategy for advanced MR-TADF emitters and confirms their extensive potential in high-performance optoelectronic devices.