Abstract
This study comprehensively investigates the effect of Indium (In) doping on the structural, morphological, and optoelectronic properties of tin mono-sulfide (SnS) thin films deposited using co-evaporation. X-ray diffraction studies identified the orthorhombic phase of SnS. Raman analysis confirmed the formation of SnS by co-evaporation. Morphological analysis revealed uniform coating of the films, a transition from rod-like to regular grain-like structures with increased In doping. A systematic reduction in Sn concentration, with the increase in In is observed in EDS, indicating the substitutional doping of In. The decrease in root mean square roughness with In incorporation suggests smoother film surfaces. The films demonstrated a pronounced improvement in optoelectronic properties, with a notable increase in the absorption coefficient and a bandgap reduction from 2.18 eV to 1.74 eV, resulting from In doping. A significant enhancement in electrical characteristics is observed, including a 140 % increase in conductivity and a systematic rise in carrier concentration with higher In doping levels. Heterojunction devices are fabricated with structure <FTO/Al:ZnO/In:SnS/Ag> having a series resistance of 29.9 Ω having an ideality factor of 2.8.
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