Extreme Ultraviolet Lithography Reticles Research Articles

High transmission pellicles for extreme ultraviolet lithography reticle protection

The authors present the results of a full-field extreme ultraviolet (EUV) pellicle for reticle protection and defect mitigation. Based on novel microelectromechanical systems based fabrication, it comprises a 50 nm Si membrane attached to a wire-grid. Two types of pellicle fabrication techniques are described. The authors present the first actinic results of extreme ultraviolet lithography reticle with pellicle exposed on IMEC Advanced Demo Tool. The impact of different pellicle types on imaging is evaluated as a function of pellicle standoff distance and mesh geometry. A new prototype pellicle has been developed with a measured transmission of 82% in EUV. Actinic exposures are complemented with aerial image modeling, thermal analysis, vacuum cycling, resist outgas tests, and >5 g repeated scan cycle robustness tests.

Electrostatic chucking for extreme ultraviolet lithography: Simulations and experiments

The purpose of this research is to assess the effectiveness of electrostatic chucks in reducing low-spatial frequency mask (or reticle) flatness variations and to validate finite element (FE) models of the chuck-mask interaction. The flatness of a sample extreme ultraviolet lithography reticle and an electrostatic pin chuck were measured using a Zygo interferometer. The measured flatness data were entered into the FE models, and electrostatic chucking was simulated by applying an area-weighted average pressure on the reticle. The shape of the mask when clamped by the electrostatic chuck was then predicted using the FE model. To validate these predictions, experiments were conducted in which the previously measured reticle was electrostatically clamped using the pin chuck. These experiments were conducted in a vacuum chamber to minimize the effects of humidity. Interferometric plots of the chucked reticle surface were obtained and compared with the FE predictions. It was found that the measured and predicted shapes were in good agreement. Results from the experiments and simulations will be used to establish specifications for the chuck design and to identify the range of flatness variations that can be accommodated with electrostatic chucking.

Distortion of chucked extreme ultraviolet reticles from entrapped particles

Successful imaging of patterns with critical dimensions less than 45nm with extreme ultraviolet lithography (EUVL) requires stringent controls on all sources of image placement (IP) errors. Among the potential sources of IP error is the mechanical distortion of the patterned mask when mounted in the exposure tool. An EUVL reticle can exhibit both in-plane distortion and out-of-plane distortion due to the presence of debris lodged between the mask and the electrostatic chuck. Even particles with a compressed height as small as 100nm have the potential to consume a significant portion of the IP error budget. To alleviate this problem, a thorough understanding of the response of the reticle∕particle∕chuck system during electrostatic chucking is essential. This article describes experimental indentation testing to characterize relevant nanoscale material properties and the subsequent use of the data in finite element models that simulate the system response under typical chucking conditions.

Advancing the ion beam thin film planarization process for the smoothing of substrate particles

For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization Process, a coating process designed to planarize substrate asperities, can be extended to smooth ∼70 and ∼80 nm diameter particles on EUVL reticle substrates to a height of ∼0.5 nm, which will render them noncritical in an EUVL printing process. We demonstrate this smoothing process using controlled nanoscale substrate particles and lines fabricated with an e-beam lithography process. The above smoothing process was also modified to yield an excellent reflectance/wavelength uniformity and a good EUV reflectivity for the multilayer, which is required for EUVL reticles. XTEM on a smoothed substrate line defect shows excellent agreement with results obtained from our multilayer growth model.

Repairing amplitude defects in multilayer-coated extreme-ultraviolet lithography reticles by use of a focused ion beam

We present a method for repairing defects near the top surfaces of multilayer coatings in general and specifically on extreme-ultraviolet lithography mask blanks. Milling away the defect and a surrounding region of the multilayer by use of a focused ion beam can repair both the reflectivity and the phase of the reflected light in the vicinity of such a defect. We describe the conditions under which the repaired region will not itself be a defect and experimentally demonstrate the feasibility of this multilayer repair technique. The results described are also applicable to understanding and controlling the optical effects of ion-induced multilayer erosion.

Developing a viable multilayer coating process for extreme ultraviolet lithography reticles

Reticle blanks for extreme ultraviolet lithography (EUVL) are fabricated by depositing reflective Mo/Si multilayer films on superpolished substrates. To obtain a reasonable cost of ownership for EUVL, the multilayer films must be nearly defect free, have excellent reflectance/thickness uniformity, and have a high EUV reflectance. Small particle contaminants on the substrate that can nucleate printable Mo/Si phase defects are a serious concern. We develop an ion-beam thin film planarization process for mitigating the effect of small substrate contaminants that relies on enhancing the smoothing capability of Mo/Si multilayer films; we observe that etching of the Si layers in between deposition steps can yield a significant improvement in smoothing. Using this process substrate particles as large as 50 nm in diameter are smoothed to ∼ 1 nm in height, rendering them harmless. We further develop this process so that it retains these particle-smoothing capabilities while also achieving a high EUV reflectance and excellent uniformity

Predicting the thermomechanical distortion of extreme ultraviolet lithography reticles for preproduction and production exposure tools

The thermomechanical distortion of extreme ultraviolet lithography (EUVL) reticles during exposure may lead to significant image placement (IP) errors. As throughput requirements for high-volume manufacturing (HVM) increase, the necessary illumination power levels rise, resulting in further distortion of the reticle. The thermal response of the EUVL reticle is predicted using finite element models for a typical HVM exposure tool. The effect of increasing the EUV source power on reticle heating is investigated by comparing the thermal distortion expected in exposure tools using different throughput values corresponding to the α tool, β tool, and the HVM exposure tool (γ tool). The effect of imperfect contact between the EUVL reticle and the chuck surface on the IP errors due to thermal distortion is studied for different effective contact area ratios. Also, an alternative design concept is proposed, aimed at providing a solution to the microparticle trapping problem (between the reticle and the chuck).

Extreme ultraviolet mask fabrication with high inspection contrast TaSiNx absorber stack

Extreme ultraviolet lithography (EUVL) is a leading candidate for next generation lithography with the potential for extendibility beyond the 45 nm node. The three-layer absorber stack for EUVL reticles consists of an absorber, repair buffer and etch stop layers, while a two-layer absorber stack eliminates the etch stop layer. Improving inspection contrast is critically important to finding defects. In previous work, using TaSiN as the EUV absorber, the inspection contrast was less than 10%, which did not allow for effective defect detection to occur. However, other TaSiN properties such as thin film stress control and critical dimension etch bias were clearly superior to the Cr absorber. An improved process using a Ta-based absorber stack that maintains the beneficial characteristics of the film, on SEMI Standard P1-92 6025 format substrates, is discussed.

Particle-induced distortion in extreme ultraviolet lithography reticles during exposure chucking

Since the goal of extreme ultraviolet lithography is to produce circuit patterns with critical dimensions less than 65 nm, a key to its success will be to identify and minimize the major sources of image placement (IP) error at the wafer. Two sources of IP error are in-plane distortion (IPD) and out-of-plane deformation (OPD) of the patterned reticle during chucking in the exposure tool. Among the many possible causes of IPD and OPD is particle contamination. Small pieces of debris lodged between the reticle and chuck have the potential to distort the pattern that is transferred to the device wafer. Such distortions may consume an unduly large portion of the error budget allotted to image placement. In order to limit these IP errors, it is first necessary to gain a thorough understanding of the behavior of a particle trapped during the chucking process. This article describes the techniques that were used to study these trapped particles and their potential effects on pattern placement accuracy.

Determination of the Plastic Behavior of Low Thermal Expansion Glass at the Nanometer Scale

ABSTRACTThe nanometer-scale plastic behavior of two low thermal expansion glasses (ULE® and Zerodur®) was determined through a combination of nanoindentation experiments and finite element modeling. The finite element models were then extended to investigate aspects of the performance of these materials as extreme ultraviolet lithography reticles.

Method for repairing Mo/Si multilayer thin film phase defects in reticles for extreme ultraviolet lithography

The development of a nearly defect-free reticle blank is an important challenge facing extreme ultraviolet lithography (EUVL). The core element of an EUVL reticle blank is the reflective Mo/Si multilayer film, and deposition of Mo/Si on very small substrate defects can result in critical Mo/Si phase defects. In this article we present a method for repairing Mo/Si multilayer film phase defects in EUVL reticle blanks. An electron beam is used to deposit energy in the immediate vicinity of the defect, producing a small local contraction of the layer thicknesses due to silicide formation at the Mo/Si interfaces. We show in simulations that this contraction can significantly reduce the original structural deformation. We also present experimental results showing that it is possible to use an electron beam to controllably produce depressions in Mo/Si with nanometer-scale depths, and that this can be achieved without significantly impairing the reflective properties of the Mo/Si multilayer films.

Writing, repairing, and inspecting of extreme ultraviolet lithography reticles considering the impact of the materials

Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50 nm node. Selecting the proper materials for the absorber stack directly impacts one’s ability to conduct effective electron beam patterning, focused ion beam repair, and inspection of an EUVL reticle. An attempt to define the optimal absorber stack based on the interaction of electrons, ions, and photons with the absorber stack is studied from the perspective of patterning, repair, and inspection of EUVL reticles, respectively.

An ion-assisted Mo-Si deposition process for planarizing reticle substrates for extreme ultraviolet lithography

Substrate particles are a serious concern in the fabrication of reticles for extreme ultraviolet lithography (EUVL) because they nucleate defects in the reflective multilayer films that can print in the lithographic image. We have developed a strategy for planarizing reticle substrates with smoothing-layers and, in this letter, we investigate the smoothing properties of an ion-assisted Mo-Si deposition process. We have observed that ion-assistance can significantly improve the particle-smoothing properties of Mo-Si multilayer films and can do so without a significant increase in the high-spatial frequency roughness of the multilayer film. An ion-assisted Mo-Si smoothing-layer approach to reticle substrate planarization, therefore, shows significant promise for defect mitigation in EUVL reticles.