Expressions For Noise Parameters Research Articles

Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors

In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are derived. The analytical and experimental results show that under the same bias condition, good emitter-length scaling of the noise and small signal model parameters can be achieved between 1.6μm ×10 μm, 1.6μm × 20 μm and 1.6μm × 30 μm InP HBTs.

Microwave noise modeling for MOSFETs

SummaryAnalytical expressions for the noise parameters of radio frequency metal oxide semiconductor field effect transistors (MOSFETs) are presented in this paper. These expressions are derived from an accurate small‐signal and noise equivalent circuit model, which takes into account the substrate parasitics and series inductances. Further, simplified expressions for noise parameters in the low‐frequency range are given. Good agreement is obtained between measured and calculated results up to 14 GHz for 0.35 µm MOSFET over a wide range of bias points. Copyright © 2015 John Wiley & Sons, Ltd.

Microwave noise modeling for InP-InGaAs HBTs

Analytical expressions for the noise parameters of microwave InP double heterojunction bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from an accurate small-signal and noise equivalent-circuit model, which takes into account the influences of the base-collector capacitance and the base resistance distributed nature. Pad capacitances and series inductances are also included. Further simplified expressions for noise parameters in the low-frequency range are given. Good agreement is obtained between measured and calculated results up to 20 GHz for InP-InGaAs DHBTs with a 5/spl times/5 /spl mu/m/sup 2/ emitter area over a wide range of bias points.