Abstract
SummaryAnalytical expressions for the noise parameters of radio frequency metal oxide semiconductor field effect transistors (MOSFETs) are presented in this paper. These expressions are derived from an accurate small‐signal and noise equivalent circuit model, which takes into account the substrate parasitics and series inductances. Further, simplified expressions for noise parameters in the low‐frequency range are given. Good agreement is obtained between measured and calculated results up to 14 GHz for 0.35 µm MOSFET over a wide range of bias points. Copyright © 2015 John Wiley & Sons, Ltd.
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