Depletion Expansion Research Articles

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.