Localized Excitons Research Articles

Understanding Spin-Triplet Excited States in Carbene-Metal-Amides.

Carbene-metal-amides (CMAs) are emerging delayed fluorescence materials for organic light-emitting diode (OLED) applications. CMAs possess fast, efficient emission owing to rapid forward and reverse intersystem crossing (ISC) rates. The resulting dynamic equilibrium between singlet and triplet spin manifolds distinguishes CMAs from most purely organic thermally activated delayed fluorescence emitters. However, direct experimental triplet characterization in CMAs is underutilized, limiting our detailed understanding of the ISC mechanism. In this work, we combine time-resolved spectroscopy with tuning of state energies through environmental polarity and metal substitution, focusing on the interplay between charge-transfer (3CT) and local exciton (3LE) triplets. Unlike previous photophysical work, we investigate evaporated host : guest films of CMAs and small-molecule hosts for increased device relevance. Transient absorption reveals an evolution in the triplet excited-state absorption (ESA) consistent with a change in orbital character between hosts with differing dielectric constants. Using quantum chemical calculations, we simulate ESAs of the lowest triplet states, highlighting the contribution of only 3CT and donor-moiety 3LE states to spectral features, with no strong evidence for a low-lying acceptor-centered 3LE. Thus, our work provides a blueprint for understanding the role of triplet excited states in CMAs which will enable further intelligent optimization of this promising class of materials.

Quantized Microcavity Polariton Lasing Based on InGaN Localized Excitons.

Exciton-polaritons, which are bosonic quasiparticles with an extremely low mass, play a key role in understanding macroscopic quantum effects related to Bose-Einstein condensation (BEC) in solid-state systems. The study of trapped polaritons in a potential well provides an ideal platform for manipulating polariton condensates, enabling polariton lasing with specific formation in k-space. Here, we realize quantized microcavity polariton lasing in simple harmonic oscillator (SHO) states based on spatial localized excitons in InGaN/GaN quantum wells (QWs). Benefiting from the high exciton binding energy (90 meV) and large oscillator strength of the localized exciton, room-temperature (RT) polaritons with large Rabi splitting (61 meV) are obtained in a strongly coupled microcavity. The manipulation of polariton condensates is performed through a parabolic potential well created by optical pump control. Under the confinement situation, trapped polaritons are controlled to be distributed in the selected quantized energy sublevels of the SHO state. The maximum energy spacing of 11.3 meV is observed in the SHO sublevels, indicating the robust polariton trapping of the parabolic potential well. Coherent quantized polariton lasing is achieved in the ground state of the SHO state and the coherence property of the lasing is analyzed through the measurements of spatial interference patterns and g(2)(τ). Our results offer a feasible route to explore the manipulation of macroscopic quantum coherent states and to fabricate novel polariton devices towards room-temperature operations.

Twist-angle-dependent optical behaviors of excitons in twisted bilayer MoS2 at low temperature

Twisted bilayers of two-dimensional materials provide a powerful and attractive platform to control band structure and tailor optical properties since the twist angle θ between the bilayer has been shown to be a critical parameter in engineering the moiré potential. Here, we demonstrate the θ-driven effects on excitons in twisted bilayer MoS2 (tBLMs) by measuring photoluminescence (PL) spectra. The localized state exciton between 1.70 eV and 1.80 eV is observed at 7 K with properties periodically modulated by θ. The θ is also a crucial factor affecting direct excitons. Furthermore, the phonon around 410 cm−1 has a θ dependence similar to excitons by measuring Raman spectra. The localized stacking patterns, the recombination of excitons, and the phonon-exciton interactions are confirmed in tBLMs. Our work provides the help to investigate the new quantum phenomena of tBLMs by optical methods and provides possibilities to manipulate the emission of excitons in tBLMs.

Ultrafast Hot Exciton Nonadiabatic Excited-State Dynamics in Green Fluorescent Protein Chromophore Analogue.

The ultrafast high-energy nonadiabatic excited-state dynamics of the benzylidenedimethylimidazolinone chromophore dimer has been investigated using an electronic structure method coupled with on-the-fly quantitative wave function analysis to gain insight into the photophysics of hot excitons in biological systems. The dynamical simulation provides a rationalization of the behavior of the exciton in a dimer after the photoabsorption of light to higher-energy states. The results suggest that hot exciton localization within the manifold of excited states is caused by the hindrance of torsional rotation due to imidazolinone (I) or phenolate (P) bonds i.e., ΦI- or ΦP-dihedral rotation, in the monomeric units of a dimer. This hindrance arises due to weak π-π stacking interaction in the dimer, resulting in an energetically uphill excited-state barrier for ΦI- and ΦP-twisted rotation, impeding the isomerization process in the chromophore. Thus, this study highlights the potential impact of the weak π-π interaction in regulating the photodynamics of the green fluorescent protein chromophore derivatives.

Microwave‐Assisted Confining Growth and Liquid Exfoliation of sp3‐Hybrid Carbon Nitride Nano/Micro‐Crystals

As one promising carbon‐based material, sp3‐hybrid carbon nitride has been predicted with various novel physicochemical properties. However, the synthesis of sp3‐hybrid carbon nitride is still limited by the nanaoscale, low crystallinity, complex source, and expensive instruments. Herein, we have presented a facile approach to the sp3‐hybrid carbon nitride nano/micro‐crystals with microwave‐assisted confining growth and liquid exfoliation. Actually, the carbon nitride nano/micro‐crystals can spontaneously emerge and grow in the microwave‐assisted polymerization of citric acid and urea, and the liquid exfoliation can break the bulk disorder polymer to retrieve the highly crystalline carbon nitride nano/micro‐crystals. The obtained carbon nitride nano/micro‐crystals present superior blue light absorption strength and surprising photoluminescence quantum yields of 57.96% in ethanol and 18.05% in solid state. The experimental characterizations and density functional theory calculations reveal that the interface‐trapped localized exciton may contribute to the excellent intrinsic light emission capability of carbon nitride nano/micro‐crystals and the interparticle staggered stacking will prevent the aggregation‐caused‐quenching partially. Finally, the carbon nitride nano/micro‐crystals are demonstrated to be potentially useful as the phosphor medium in light‐emitting‐diode for interrupting blue light‐induced eye damage. This work paves new light on the synthesis strategy of sp3‐hybrid carbon nitride materials and thus may push forward the development of multiple carbon nitride research.

Defect‐Induced Localized Excitons and Raman Modes in Monolayer MoSe2

In monolayer transition metal dichalcogenides, defects, such as chalcogen vacancies, play an important role in determining their properties. Herein, monolayer MoSe2 with varying Se vacancy concentrations is successfully prepared by adjusting the amount of the precursors during the chemical vapor deposition synthesis. The Raman and low‐temperature photoluminescence spectra are systematically studied at varying defect concentrations. Furthermore, it is found that Se vacancies introduce in‐gap electronic states, leading to distinct localized exciton emissions, which can be engineered by controlling the concentration of Se vacancies. Density functional theory calculations indicate that the observed variations in localized exciton emission are attributed to the change of defect level with increasing defect concentration. The results provide insights into the influence of varying Se vacancy concentrations on defect‐induced Raman and PL spectroscopy in MoSe2.

Transport and localization of indirect excitons in a van der Waals heterostructure

Transport and localization of indirect excitons in a van der Waals heterostructure

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

We investigate the excitonic species in WS2 monolayers transferred onto III–V semiconductor substrates with different surface treatments. When the III–V substrates were covered with amorphous native oxides, negatively charged excitons dominated the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III–V substrates were reduced, neutral excitons began to dominate the spectral weight, indicating a reduction in the electron density in the WS2 monolayers. The removal of the native oxides enhanced the electron transfer from the WS2 monolayer to the III–V substrate. In addition, an additional shoulder-like PL feature appeared ∼50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III–V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low-energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, implement deterministic carrier localization or delocalization for the 2D materials, and facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

Bandgap tunable pure-phase zero-dimensional Cs4PbClxBr6-x perovskites with selective absorption and intrinsic ultraviolet emission

Zero-dimensional perovskite Cs4PbX6 possesses a unique crystal structure that sets it apart from the three-dimensional CsPbX3 perovskite, exhibiting a range of fascinating optical properties, and superior thermal and chemical stability compared to CsPbBr3. Its wide bandgap and narrowband absorption characteristics enable selective detection and applications involving deep ultraviolet to near-blind ultraviolet light. However, there are still challenges in achieving high-quality pure-phase nanocrystals, regulating bandgap and clarifying carrier transport mechanisms. In this study, a mild and controllable method was developed to synthesize high-quality pure-phase Cs4PbBr6, while kept size-independent bandgap. Subsequently, bandgap was tuned continuously from 3.94 to 4.35 eV by manipulating the halogen ratios, and still hold the pure-phase of zero-dimensional Cs4PbClxBr6-x. Furthermore, DFT calculations and an in-depth investigation of their emission demonstrated the localized electron states and exciton self-trapping mechanisms.

Photoluminescence of Monolayer WSe2 Enhanced by the Exciton Funnel Effect and the Interfacial Carrier Tunneling Effect When Integrated with 3D Si Wrinkled Structures

Quantum optics and photonic quantum-information technologies require emitters that have good stability and brightness, coupled with fabrication scalability and on-chip integrability. Most quantized emitters are presently based on 1D and 3D sources. Recently, monolayer transition metal dichalcogenides (TMDCs) hosting spatially localized excitons with narrow linewidths have garnered great interest. Advantages such as large binding energies and long room-temperature lifetimes of intralayer excitons suggest that TMDCs are promising candidates for use in optical devices. Here, we propose an emitter based on a 2D WSe2 semiconductor monolayer integrated with a periodic 3D Si-based wrinkled pattern. Carriers confined within the wrinkled pattern can be electrically and optically pumped, and funneled, to boost emission from the 2D WSe2 layer. This in turn acts as a monochromated quantum light source for the Si or any Si-based quantum optic and photonic information technologies. The brightness of the emission is enhanced by a factor greater than 40 compared with monolayer WSe2 on conventional flat SiGe. Moreover, these monolayer 2D/3D semiconductor composite heterostructures are fully scalable and promisingly efficient chip-integrated emitters.

Excited-State Dynamics of MAPbBr3: Coexistence of Excitons and Free Charge Carriers at Ultrafast Times.

Methylammonium lead tribromide perovskite (MAPbBr3) is an important material, for example, for light-emitting applications and tandem solar cells. The relevant photophysical properties are governed by a plethora of phenomena resulting from the complex and relatively poorly understood interplay of excitons and free charge carriers in the excited state. In this study, we combine transient spectroscopies in the visible and terahertz range to investigate the presence and evolution of excitons and free charge carriers at ultrafast times upon excitation at various photon energies and densities. For above- and resonant band-gap excitation, we find that free charges and excitons coexist and that both are mainly promptly generated within our 50-100 fs experimental time resolution. However, the exciton-to-free charge ratio increases upon decreasing the phonon energy toward resonant band gap excitation. The free charge signatures dominate the transient absorption response for above-band-gap excitation and low excitation densities, masking the excitonic features. With resonant band gap excitation and low excitation densities, we find that although the exciton density increases, free charges remain. We show evidence that the excitons localize into shallow trap and/or Urbach tail states to form localized excitons (within tens of picoseconds) that subsequently get detrapped. Using high excitation densities, we demonstrate that many-body interactions become pronounced and effects such as the Moss-Burstein shift, band gap renormalization, excitonic repulsion, and the formation of Mahan excitons are evident. The coexistence of excitons and free charges that we demonstrate here for photoexcited MAPbBr3 at ultrafast time scales confirms the high potential of the material for both light-emitting diode and tandem solar cell applications.

Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne.

Twisted moiré superlattice is featured with its moiré potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moiré potential depth. Herein, owing to the pz orbital induced band edge states enabled by the unique sp-C in bilayer γ-graphdiyne (GDY), an ultradeep moiré potential of ∼289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moiré potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moiré superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.

Understanding Spin‐Triplet Excited States in Carbene‐Metal‐Amides

Carbene‐metal‐amides (CMAs) are emerging delayed fluorescence materials for organic light‐emitting diode (OLED) applications. CMAs possess fast, efficient emission owing to rapid forward and reverse intersystem crossing (ISC) rates. The resulting dynamic equilibrium between singlet and triplet spin manifolds distinguishes CMAs from most purely organic thermally activated delayed fluorescence emitters. However, direct experimental triplet characterization in CMAs is underutilized, limiting our detailed understanding of the ISC mechanism. In this work, we combine time‐resolved spectroscopy with tuning of state energies through environmental polarity and metal substitution, focusing on the interplay between charge‐transfer (3CT) and local exciton (3LE) triplets. Unlike previous photophysical work, we investigate evaporated host:guest films of CMAs and small‐molecule hosts for increased device relevance. Transient absorption reveals an evolution in the triplet excited‐state absorption (ESA) consistent with a change in orbital character between hosts with differing dielectric constants. Using quantum chemical calculations, we simulate ESAs of the lowest triplet states, highlighting the contribution of only 3CT and donor‐moiety 3LE states to spectral features, with no strong evidence for a low‐lying acceptor‐centered 3LE. Thus, our work provides a blueprint for understanding the role of triplet excited states in CMAs which will enable further intelligent optimization of this promising class of materials.

Quantum Defect Sensitization via Phase-Changing Supercharged Antibody Fragments.

Quantum defects in single-walled carbon nanotubes promote exciton localization, which enables potential applications in biodevices and quantum light sources. However, the effects of local electric fields on the emissive energy states of quantum defects and how they can be controlled are unexplored. Here, we investigate quantum defect sensitization by engineering an intrinsically disordered protein to undergo a phase change at a quantum defect site. We designed a supercharged single-chain antibody fragment (scFv) to enable a full ligand-induced folding transition from an intrinsically disordered state to a compact folded state in the presence of a cytokine. The supercharged scFv was conjugated to a quantum defect to induce a substantial local electric change upon ligand binding. Employing the detection of a proinflammatory biomarker, interleukin-6, as a representative model system, supercharged scFv-coupled quantum defects exhibited robust fluorescence wavelength shifts concomitant with the protein folding transition. Quantum chemical simulations suggest that the quantum defects amplify the optical response to the localization of charges produced upon the antigen-induced folding of the proteins, which is difficult to achieve in unmodified nanotubes. These findings portend new approaches to modulate quantum defect emission for biomarker sensing and protein biophysics and to engineer proteins to modulate binding signal transduction.

Deep red/near-infrared electro-fluorescence material with nearly 10% external quantum efficiency based on hybridized local and charge-transfer

Although the hot exciton mechanism with hybridized local and charge-transfer (HLCT) characteristics is a promising molecular design strategy, there are few organic deep red (DR) and near-infrared (NIR) HLCT-type emitters with high external quantum efficiency (EQE). Herein, this work reports three DR/NIR emitters with high EQE, TNZ-3PPOXP, TPANZPOXP, and 2PPOXNZ. These emitters show DR/NIR emission in the neat film, 664 nm for TNZ-3PPOXP, 718 nm for TPANZPOXP, and 724 nm for 2PPOXNZ. Interestingly, the emitters all possess hybridized local and charge-transfer (HLCT) characteristics and potential hot exciton channels. The corresponding non-doped OLED achieve high exciton utilization efficiency (EUE) and NIR emission, 55.6 %@694 nm for TNZ-3PPOXP, 82.8 %@736 nm for TPANZPOXP, and 42.3 %@756 nm for 2PPOXNZ. More importantly, with these emitters as the guest, PO-01 as the phosphorescent sensitizer, and CBP as the host, the sensitization device achieved nearly 10 % EQE, 9.55 %@662 nm for TNZ-3PPOXP, 4.20 %@699 nm for TPANZPOXP, and 4.49 %@702 nm for 2PPOXNZ. To our knowledge, this is one of the highest device efficiencies based on HLCT as the guest.

Topological and compositional disorder induced exciton Anderson localization highly enhances luminescence quantum yields of alloyed perovskite nanocrystals

Anderson localization has inspired tremendous effort in exploring underlying physics regarding electron, atom, and photon transport in disordered lattices. However, due to the difficulty in implementing periodic trapping potential for neutral excitons, observing Anderson localization of excitons in disordered semiconductors remains challenging. We report evidence of Anderson localization of Frenkel excitons in the alloyed perovskite nanocrystals that possess high topological and compositional disorder. The broken symmetry-driven constructive interference of scattered exciton wavefunctions around the octahedrons induces strong exciton localization and, consequently, exciton–phonon coupling. This causes significant promotion of the luminescence quantum efficiency from 30% to an impressive 75% owing to enhanced radiative and suppressed nonradiative quantum transition rates. These findings clarify that both Anderson localization and exciton–lattice coupling play key roles in triggering immobility of Frenkel excitons in disordered wide-bandgap semiconductors and guide design of monocomponent warm white light emitters based on highly efficient alloyed perovskite nanocrystals.

Investigation of Exciton Dynamics to Confirm Coupling Effects Using a Comparison between Ensemble and Single Laterally‐Coupled GaAs Quantum Dot Molecules

Herein, time‐integrated and time‐resolved photoluminescence (PL) measurement experiments are performed on coupled GaAs quantum dot (QD) molecules with larger laser spot size and a single‐coupled QD molecule to investigate the dynamics of exciton states. A linearly polarized laser along the coupled direction of a laterally‐coupled GaAs QD molecule [10] is used to determine the coupling effects of the different exciton states. For the ensemble of coupled QD molecules, the exciton PL peak shifts to lower energy (≈70 meV) and shows a linear increase in the PL intensity, demonstrating the properties of exciton states as a function of the laser excitation power. In addition, a power‐dependent redshift is observed in the single‐coupled GaAs QD molecule as a function of the excitation power; however, the two distinguished exciton states become resolved and show different power factors when the laser excitation power is linearly increased. This result clearly indicates the presence of energy transfer between the two different exciton states, X1 and X2. Furthermore, when the polarized laser excitation power is increased, a coupled biexciton consisting of two different localized exciton states (X1 and X2) is clearly observed, and a power‐dependent spectral redshift is detected in the exciton and biexciton states. At a high excitation power (15 I0), the decay times of the two different localized exciton states clearly show different lifetimes; and the decay time difference due to the size difference can be ignored at a low excitation power. Theoretically, the decay times of the two different exciton states, wherein the size deviation can be ignored, should be the same. Based on the results of the time‐integrated and time‐resolved PL measurements and the comparison between the ensemble and single exciton PL peaks, it is concluded that the coupling process in laterally‐coupled GaAs QD molecules is strongly supported against long‐range separation.

Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures

The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm antibunching. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.

Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface.

Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.

Uncovering the Effect of A-Site Cations on Localized Excitons Photoluminescence of Manganese-Doped Zinc Chloride Nanocrystals.

Elucidating the key factors that affect the localized excitons (LEs) photoluminescence (PL) in lead-free metal halide nanocrystals (NCs) is important for their optoelectronic applications. However, the effect of A-site cations on LEs based PL is not well understood. Herein, we varied the A-site cation ratio (Rb/Cs) to investigate the influence on LEs based PL in manganese-doped zinc chloride NCs. Through time-resolved photoluminescence (TR-PL) spectra and density functional theory (DFT) calculations, we discovered that Cl vacancy is energetically more favorable in Mn2+-doped Rb3ZnCl5 NCs compared to Mn2+-doped Cs3ZnCl5 NCs. The higher concentration of Cl vacancy increases the nonradiative recombination process in Rb3ZnCl5:Mn2+ NCs, ultimately determining the PL efficiency. This research enhances the understanding of the A-site cation effect on LEs-based PL in lead-free metal halide NCs.