Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates is an important processing technology for large-area polysilicon electronics, such as flat-panel displays and two-dimensional imaging arrays. It also allows for the integration of amorphous silicon and polysilicon devices on the same glass substrate and provides procedures for the doping of self-aligned thin-film transistors. Materials studies show that laser-crystallized polysilicon exhibits a narrow peak in the average grain size as a function of the excimer laser energy density, with a corresponding peak in the electron mobility. This is of particular significance for devices since large grains imply high electron mobility. On the other hand, the peak in the grain size is very narrow and is also accompanied by a peak in the surface roughness of the film. These relationships force a compromise between large grain size for high mobility and homogeneous size distribution for uniformity of device characteristics. A window exists in process parameter space where good-quality devices with uniform characteristics have been obtained. Also, laser-processing enhancements, such as laser doping and fabrication of self-aligned transistors, provide additional tools to fabricate unique devices.