Exchange Splitting Research Articles

Theory-driven design of local spin-state modulation at atomically dispersed iron sites for enhanced CO2 electroreduction

Herein, density functional theory (DFT) was used to guide the systematic design of highly efficient single-atom electrocatalysts to improve the kinetics of the CO2 reduction reaction (CO2RR). We present a novel class of catalysts that exhibit magnetic-proximity-induced exchange splitting (spin polarization). The design of these catalysts involved the precise modulation of d-shell energy levels at metallic sites and the subsequent alteration of the atomic/molecular orbitals of the adsorbed intermediates. To validate the effectiveness of our design strategy, we introduced neighboring nitrogen (N) doping near the Fe-N4 coordination environment, demonstrating the successful manipulation of the local spin state of the active sites. The results of the theoretical calculations align with the experimental results, with remarkable selectivity exceeding 90 % at low potentials (<-0.5 V vs. RHE) and sustained electrocatalytic activity for over 24 h. In situ characterization further revealed that a modulated local spin state led to a decrease in the occupation of the Fe 3d spin-down electronic states below the Fermi level. Concurrently, electrons migrated to the frontier antibonding orbitals of *COOH. This dual effect resulted in a lower reaction energy (ΔG), representing a thermodynamic benefit, and accelerated proton transfer to *COOH, representing a kinetic benefit, collectively enhancing the electrocatalytic process.

Signatures of magnetism control by flow of angular momentum

Exploring new strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance not only for advancing our understanding of fundamental magnetism but also for unlocking potential applications. A well-established concept uses gate voltages to control magnetic properties by modulating the carrier population in a capacitor structure1–5. Here we show that, in Pt/Al/Fe/GaAs(001) multilayers, the application of an in-plane charge current in Pt leads to a shift in the ferromagnetic resonance field depending on the microwave frequency when the Fe film is sufficiently thin. The experimental observation is interpreted as a current-induced modification of the magnetocrystalline anisotropy ΔHA of Fe. We show that (1) ΔHA decreases with increasing Fe film thickness and is connected to the damping-like torque; and (2) ΔHA depends not only on the polarity of charge current but also on the magnetization direction, that is, ΔHA has an opposite sign when the magnetization direction is reversed. The symmetry of the modification is consistent with a current-induced spin6–8 and/or orbit9–13 accumulation, which, respectively, act on the spin and/or orbit component of the magnetization. In this study, as Pt is regarded as a typical spin current source6,14, the spin current can play a dominant part. The control of magnetism by a spin current results from the modified exchange splitting of the majority and minority spin bands, providing functionality that was previously unknown and could be useful in advanced spintronic devices.

Giant exchange splitting in the electronic structure of A-type 2D antiferromagnet CrSBr

We present the evolution of the electronic structure of CrSBr from its antiferromagnetic ground state to the paramagnetic phase above TN = 132 K, in both experiment and theory. Low-temperature angle-resolved photoemission spectroscopy (ARPES) results are obtained using a novel method to overcome sample charging issues, revealing quasi-2D valence bands in the ground state. The results are very well reproduced by our QSGŴ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\rm{QSG}}\\hat{{\\rm{W}}}$$\\end{document} calculations, which further identify certain bands at the X points to be exchange-split pairs of states with mainly Br and S character. By tracing band positions as a function of temperature, we show the splitting disappears above TN. The energy splitting is interpreted as an effective exchange splitting in individual layers in which the Cr moments all align, within the so-called A-type antiferromagnetic arrangement. Our results lay firm foundations for the interpretation of the many other intriguing physical and optical properties of CrSBr.

Quantum-Confined Tunable Ferromagnetism on the Surface of a Van der Waals Antiferromagnet NaCrTe2.

The surface of three-dimensional materials provides an ideal and versatile platform to explore quantum-confined physics. Here, we systematically investigate the electronic structure of Na-intercalated CrTe2, a van der Waals antiferromagnet, using angle-resolved photoemission spectroscopy and ab initio calculations. The measured band structure deviates from the calculation of bulk NaCrTe2 but agrees with that of ferromagnetic monolayer CrTe2. Consistently, we observe unexpected exchange splitting of the band dispersions, persisting well above the Néel temperature of bulk NaCrTe2. We argue that NaCrTe2 features a quantum-confined 2D ferromagnetic state in the topmost surface layer due to strong ferromagnetic correlation in the CrTe2 layer. Moreover, the exchange splitting and the critical temperature can be controlled by surface doping of alkali-metal atoms, suggesting the feasibility of tuning the surface ferromagnetism. Our work not only presents a simple platform for exploring tunable 2D ferromagnetism but also provides important insights into the quantum-confined low-dimensional magnetic states.

Control of spin on structural stability, mechanical, magneto-optoelectronic and thermodynamic properties of RbTaX (X =P and As) materials: Emerging candidates for opto-spintronics and spin filter applications

In the present work, the density functional theory has been utilised in inspecting the ground state-structural, electronic, magnetic, optical, elastic and thermodynamic properties of new semiconductor RbTaX (X = P and As) half-Heuslers. Out of the possible three structures (α, β, γ) studied in ferromagnetic (FM) as well as non-magnetic (NM) phases, α – FM phase is found to be the most stable configuration. Both studied materials have estimated a net magnetic moment of 3μB, following the Slater-Pauling rule (Mtot=Ztot−8). With the use of modified Becke Johnson potential (mBJ) potential, the band profile reveals non-zero band gap in the spins and henceforth display spin filter property in the compounds. The predicted energy band gaps for RbTaP and RbTaAs are 3.04 and 2.87 eV for minority spin channels and 0.137 and 0.26 eV for majority spin channels, respectively. This unique feature of the Heusler compound may be advantageous for quantum information processing and spin-transport in electronic and magnetic devices. Also, a moderate exchange splitting and a Curie temperature well above the room temperature are noted. The stability of the materials under investigation was further confirmed by calculations of cohesive energy, formation energy, and second order elastic constants. The optoelectronic as well as thermodynamic properties of the studied compounds are also investigated. The estimated high value of refractive index (>4) is making them suitable for optical lenses. Moreover, photon energy absorption in the visible and ultraviolet spectrums renders them valuable for UV-VIS absorbers.

Ultrafast spin transfer and its impact on the electronic structure.

Optically induced intersite spin transfer (OISTR) promises manipulation of spin systems within the ultimate time limit of laser excitation. Following its prediction, signatures of ultrafast spin transfer between oppositely aligned spin sublattices have been observed in magnetic alloys and multilayers. However, it is known neither from theory nor from experiment whether the band structure immediately follows the ultrafast change in spin polarization or whether the exchange split bands remain rigid. We show that ultrafast spin transfer occurs even in ferromagnetic gadolinium metal. Charge transfer between localized surface and extended valence-band states leads to a decrease of the surface spin polarization. This synchronously alters the exchange splitting of the bulk valence bands during laser excitation. Moreover, the onset of demagnetization can be tuned by over 200 fs by changing the temperature-dependent spin mixing. Our results show a promising route to ultrafast control of the magnetization, widening the impact and applicability of OISTR.

Interpretation of complex optical properties and optical transitions of epitaxial LaMnO3 thin films

An in-depth analysis of the optical properties of epitaxial (001) oriented LaMnO3films grown on SrTiO3and LaAlO3single crystal substrates is performed by spectroscopic ellipsometry to determine the complex dielectric function (ε = ε1 + iε2) spectra from 0.12 to 5.89 eV. Density Functional Theory and many body perturbation theory within the G0W0 and the Bethe-Salpeter Equation approximations, are also employed to generate theoretical spectra in ε. Critical point energies (CPs) from 0.91 to 1.49 eV are interpreted as energy separation between eg and t2g orbitals. CPs from 3.31 to 3.53 eV and 3.75 to 5.23 are interpreted as Mn d exchange splitting and strong charge transfer transitions, respectively. Direct and indirect bandgaps from Tauc-plots are identified in the range of 0.100–0.594 eV. Anisotropy presents in LaMnO3 on LaAlO3 is attributed to substantial distortion in the out-of-plane epitaxial strain compared to LaMnO3 on SrTiO3. These findings provide a comprehensive understanding of the origins and characteristics of features observed in optical properties of epitaxial LaMnO3, offering insights for development of optical and electronic applications based on these materials.

Theoretical analysis of magnetic, optoelectronic, and thermoelectric properties of Cs2CuCrX6 (X = Cl and Br) double perovskites for spintronic and data storage devices

Spintronics is an emerging field that has the potential to replace conventional electronics due to their comparatively high speed, low power consumption, and infinite endurance. The phenomena of ferromagnetism with high spin polarization in double perovskites make them the desired materials for spintronics. In the present work, the structure of Cs2CuCrX6 (X = Cl and Br) and their magnetic and optoelectronic properties were studied by utilizing density functional theory (DFT). For the calculations of exchange-correlation potential, PBE-sol approximation was utilized while for the accurate measurement of electronic band structure and density of states (DOS), we employed mBJ potential. Both materials exhibit cubic structure and are thermodynamically stable as confirmed by volume optimization and negative formation energy respectively. Spin-based energy-volume optimization and values of exchange constants reveal the ferromagnetic nature of materials. It has been observed that 3-d states of Cr are responsible for ferromagnetism and have the major contribution to the net magnetic moment caused by exchange splitting. Furthermore, investigations of band structure and electronic density of states showed that both Cs2CuCrCl6 and Cs2CuCrBr6 were indirect bandgap (Eg) semiconductors with the Eg values of 1.2 eV and 0.33 eV respectively. The optical spectra of materials showed strong absorption in the ultraviolet region. Lastly, the transport and thermoelectric properties (TE) of materials were investigated in the range of temperature 300 K–800 K by using the BoltzTrap code. The transport parameter which included the electrical conductivity (σ/τ) and thermal conductivity (κe/τ) of the materials showed a decreasing trend with temperature whereas the Seebeck coefficient (S) and Power factor (P.F) showed an increasing trend for Cs2CuCrCl6 while decreases in case of Cs2CuCrBr6. Furthermore, a high figure of merit (ZT) with values of 0.75 and 0.64 was obtained for Cs2CuCrCl6 and Cs2CuCrBr6 respectively. The results of this work are encouraging and show the capabilities of the discussed materials in the fields of spintronics, thermoelectric, and optoelectronics.

Thermoelectric, mechanical, and pressure sustained half-metallic properties of BaInO3 perovskite for spintronics applications: DFT computation

Oxide perovskites continue to promote research interest because of their concurrent use in spintronic and thermoelectric applications. The electronic, magnetic, and thermoelectric properties of new half-metallic BaInO3 perovskite are investigated using the density functional theory. The structural and thermodynamic stability of the proposed perovskite is provided by the tolerance factor, octahedral factor, formation energy, and phonon dispersion curves. The structural relaxation curves reveal that the ground state is ferromagnetic. The generalized gradient approximation and mBJ band structure plots show that the half-metallicity exclusively results from the strong exchange splitting of 2p-bands at the Fermi level. Compared with PBE, mBJ depicts highly localized magnetic moments around oxygen along with enhanced half-metallic gaps and band gaps in the spin-up channel. Under a compressive strain, the system undergoes a magnetic phase transition from half-metallic ferromagnet to non-magnetic metal at 30 GPa. The elastic stability at the studied pressure range has been verified from Blackman’s and Every’s diagrams. The material remains ductile and exhibits moderate elastic anisotropy in the studied pressure range. The quasi-harmonic Debye model is employed to study the temperature and pressure effects of thermodynamic parameters. The computed transport properties including the Seebeck coefficient and spin-Seebeck coefficient predict reasonable thermoelectric performance in generating thermally induced spin-polarized current and spin current, respectively. Such a detailed study of this material could open prospects in spintronic as well as waste energy recovery devices.

Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

This investigation delves into the complex interaction at metal-semiconductor interfaces, highlighting the magnetic proximity effect in Ni/Si interfaces through systematic X-ray magnetic circular dichroism (XMCD) studies at Ni and Si edges. We analyzed two Ni/Si heterostructures with differing semiconductor doping, uncovering a magnetic proximity effect manifesting as equilibrium magnetization in the semiconductor substrate induced by the adjacent Ni layer. Our results display distinct magnetization signs corresponding to the doping levels: low-doped samples show parallel alignment to the Ni layer, while high-doped samples align antiparallel, indicating a nuanced interplay of underlying magnetization mechanisms. These findings pinpoint the roles of electron tunneling and exchange splitting modification in the magnetization behavior. The study enriches the understanding of ferromagnetic-semiconductor interface behavior, setting a precedent for the design of advanced spintronic devices that leverage the nuanced magnetic properties of these hybrid systems.

Non-collinear magnetism driven by a hidden multipolar order in PrO2

Standard microscopic approach to magnetic orders is based on assuming a Heisenberg form for inter-atomic exchange interactions. These interactions are considered as the driving force for the ordering transition with magnetic moments serving as the primary order parameter. Any higher-rank multipoles appearing simultaneously with such magnetic order are typically treated as auxiliary order parameters rather than a principal cause of the transition. In this study, we show that these traditional assumptions are violated in the case of PrO2. Evaluating a full set of Pr-Pr superexchange interactions from a first-principles many-body technique we find that its unusual non-collinear 2k magnetic structure stems from high-rank multipolar interactions, and that the corresponding contribution of the Heisenberg interactions is negligible. The observed magnetic order in PrO2 is thus auxiliary to high-rank “hidden” multipoles. Within this picture we consistently account for previously unexplained experimental observations like the magnitude of exchange splitting and the evolution of magnetic structure in external field. Our findings challenge the standard paradigm of observable magnetic moments being the driving force for magnetic transitions.

Physical properties of ferromagnetic Mn-doped double perovskites (DPs) Cs2AgInCl/Br6 for spintronics and solar cell devices: DFT calculations.

A computational framework based on density functional theory (DFT) has been effectively employed to investigate the wide-ranging physical characteristics of ferromagnetic manganese (Mn)-substituted double perovskites (DPs) with composition Cs2AgIn1-xMnxCl/Br6 (x = 0.0, 0.25). This research covers a systematic exploration of the mentioned DPs for potential applications in the domains of spintronics and energy conversion devices. The physics concerning ferromagnetic (FM) Cs2AgIn0.75Mn0.25Cl/Br6 DPs was studied computationally using the modified Becke-Johnson (mBJ-LDA) potential and the generalized gradient approximation (PBEsol GGA) method introduced by Perdew, Burke, and Ernzerhof. The structural, electronic, magnetic, and transport behavior of materials were investigated using these computations. Structural parameters for both perovskite materials were computed subsequent to their optimization in FM phase. According to evaluations of the electronic band structure and density of states (DOS), the incorporation of Mn ions into the host lattice causes exchange splitting induced by p-d hybridization, consequently stabilizing the FM state. Probing the sharing of magnetic moment, charge, and spin between the substituent cations and the host anions led to the comprehensive elaboration of this exchange splitting of bands. Important parameters such as exchange constants (N0α, N0β), and direct spin-exchange splitting Δx(d), support the stability of the FM state. Finally, we briefly explored the spin effect on other aspects of electronic transport, the Seebeck coefficient, and the power factor, using the conventional Boltzmann transport theory.

Pressure induced modification of electronic and magnetic properties of MnCrNbAl and MnCrTaAl

Spin-gapless semiconductor (SGS) is a new class of material that has been studied recently for potential applications in spintronics. This material behaves as an insulator for one spin channel, and as a gapless semiconductor for the opposite spin. In this work, we present results of a computational study of two quaternary Heusler alloys, MnCrNbAl and MnCrTaAl that have been recently reported to exhibit spin-gapless semiconducting electronic structure. In particular, using density functional calculations we analyze the effect of external pressure on electronic and magnetic properties of these compounds. It is shown that while these two alloys exhibit nearly SGS behavior at optimal lattice constants and at negative pressure (expansion), they are half-metals at equilibrium, and magnetic semiconductors at larger lattice constant. At the same time, reduction of the unit cell volume has a detrimental effect on electronic properties of these materials, by modifying the exchange splitting of their electronic structure and ultimately destroying their half-metallic/semiconducting behavior. Thus, our results indicate that both MnCrNbAl and MnCrTaAl may be attractive for practical device applications in spin-based electronics, but a potential compression of the unit cell volume (e.g. in thin-film applications) should be avoided.

Effect of NM (B, C, N, O and F) doping and Fe[sbnd]NM co-doping on structure, electronic and magnetic properties of monolayer 2H[sbnd]MoTe[formula omitted] : A first principle investigation

Exploring magnetism in two-dimensional transition-metal dichalcogenides (TMDs) has gained a plethora of interest in recent times. Herein, employing spin-polarized density functional theory, we looked into the effect of non-metal doping (B, C, N, O, and F) and Fe-non metal co-doping on structure, electronic, and magnetic properties of 2HMoTe2 to identify new promising configurations for spin-based device applications. For non-metal doping, the results depict that B, N, and F-doped systems are magnetic, and the N-doped system shows magnetic-semiconducting behavior. The half-metallic Fe-doped MoTe2 transforms into a magnetic semiconductor upon co-doping. The structural distortion around the Fe atoms modifies the crystal field splitting, resulting in triply degenerate a1 and singly degenerate a2 and a3 states. Uncompensated electrons in the co-doped system and hybridization between Fe and NM atom modifies the magnetic properties of monolayer MoTe2. Competition between crystal field splitting and intra-atomic Hund’s exchange splitting determines the magnetic moment. Due to charge compensation, C-doped and FeC co-doped systems are non-magnetic. N-doped and FeN co-doped MoTe2 exhibit long-range magnetic ordering. Formation energy calculations revealed that the co-doped configurations are easily attainable in experiments compared to non-metal doped systems. The results open up a robust way to realize 2HMoTe2 based spintronic devices.

Crystal field, electronegativity and magnetic behavior of Mn-, Fe-, Co- and Ni-doped LiMgN half-Heusler: KKR-CPA approximation

This paper aims to investigate the behavior of LiMgN half-Heusler (HH) semiconductor doped by transition metals (TM [Formula: see text] Mn, Fe, Co and Ni). HHs belong to the [Formula: see text] space group (No. 216) and have a zinc blende structure that can be described by the chemical symbol XYZ. The research methodology utilized in this investigation involves theoretical analysis based on the principles of density functional theory (DFT). The studied LiMg[Formula: see text]TM[Formula: see text]N alloy displayed the half-metallicity behavior when TM [Formula: see text] Fe, Co and Ni. Hence, these systems could be a promising candidate in spintronic application thanks to their ferromagnetism. The principal contribution to magnetism in the full LiMg[Formula: see text]TM[Formula: see text]N alloys comes from the Mn, Fe, Co and Ni doping. The partial magnetic moments of these elements are significantly greater than the combined partial magnetic moments of Li, Mg and N. When comparing LiMg[Formula: see text]Mn[Formula: see text]N to LiMg[Formula: see text]Fe[Formula: see text]N, 5Co[Formula: see text]N and LiMg[Formula: see text]Ni[Formula: see text]N, it is important to note that the exchange splitting energy [Formula: see text] associated to their spin up and spin down were discussed. The variation of Mn(3d) in relation to ([Formula: see text]) is larger than that of Fe, Co and Ni. Therefore, [Formula: see text]. Furthermore, there is a correlation between the magnetic moment and electronegativity trend of the TM dopant. Specially, the electronegativity trend ([Formula: see text] is well matched with the total spin moment trend, where [Formula: see text].

First-principles investigations on the electronic structure, optical properties, and giant magnetic-optical Kerr effect in double-perovskite Ba2NiBO6 (B = Os, Ir)

The hybrid 3d–5d transition-metal oxides have been frequently studied for their novel electronic and magnetic properties, in which the strong spin-orbit coupling (SOC) effect is added to the interplay among charge, spin, and orbital degrees of freedom. Recently, perfectly ordered 3d–5d double-perovskite oxides of Ba2NiOsO6 and Ba2NiIrO6 were synthesized: Ba2NiOsO6 was measured to be a rare ferromagnetic semiconductor and predicted to have a giant magneto-optical Kerr effect (MOKE); and Ba2NiIrO6 showed a competition between antiferromagnetic and ferromagnetic interactions. In this work, we systematically investigated the magnetic, electronic, and optical properties, as well as the MOKE of Ba2NiBO6 (B = Os, Ir) using density functional theory. The long-ranged B–B interaction was found to play a key role in determining the magnetism of the compounds. For Ba2NiOsO6, the experimentally observed semiconductive nature was reproduced only by taking into account both the electron correlation and SOC effect. In Ba2NiIrO6, however, the SOC effect on 5d Ir was weak. Owing to the d→d or p→d interband transitions, both materials had a strong absorption in the ultraviolet–visible spectral region. In particular, the absorption spectrum of Ba2NiIrO6 covered almost the entire visible region. They also exhibited considerable MOKE in the visible region. The maximum of Kerr rotation for Ba2NiOsO6 and Ba2NiIrO6 could reach 5.3° and 4.1°, respectively. The characteristics of the Kerr spectra were primarily dominated by the off-diagonal optical conductivity, which reflects the contributions of band exchange splitting and SOC to MOKE. The Ba2NiBO6 (B = Os, Ir) are very promising optoelectronic and magneto-optical materials.

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

AbstractGraphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next‐generation quantum devices. However, the spin‐symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate‐tunable spin filters. It is demonstrated that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin‐exchange splitting. The large and adjustable spin‐exchange splitting of 155.9 – 306.5 meV is obtained by the characteristic shifts in both the spin‐symmetry‐broken quantum Hall states and the Shubnikov–de Haas oscillations. Strong hybridization‐induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically‐tunable spin polarization in hybrid heterostructures.

Minority-spin conducting states in Fe substituted pyrite CoS2

There has been a longstanding debate whether the pyrite CoS2 or its alloys with FeS2 are half metallic. We argue using first principles calculations that there is a finite occupation of minority-spin states at the Fermi level throughout the series CoFe x S2. Although the exchange–correlation functional influences the specifics of the electronic structure, we observe a similar trend with increasing Fe concentration in both local density approximation and generalized gradient approximation calculations. Specifically, even as band filling is decreased through Fe substitution, the lowest-lying conduction band in the minority-spin channel broadens such that these states keep getting lowered relative to the Fermi level, which is contrary to the expectations from a rigid band picture. Furthermore, the exchange splitting decreases as more Co atoms are replaced by Fe, and this again brings the minority-spin states closer to the Fermi level. These two mechanisms, in conjunction with the experimental observation that minority-spin bands cross the Fermi level in stoichiometric CoS2, indicate that minority-spin charge carriers will always be present in CoFe x S2.

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

Abstract2D half‐metallic materials that have sparked intense interest in advanced spintronic applications are essential to the developing next‐generation nanospintronic devices. This study has adopted a first‐principles calculation method to predict the magnetic properties of intrinsic, Se‐doped, and biaxial strain tuning Cr2AsP monolayer. The Janus Cr2AsP monolayer is proven to be an intrinsic ferromagnetic (FM) semiconductor with an exchange splitting bandgap of 0.15 eV at the PBE+U level. Concentration‐dependent Se doping, such as Cr2AsSexP (x = 0.25, 0.50, 0.75), can regulate Cr2AsP from FM semiconductor to FM half‐metallicity. Specifically, the spin‐up channel crosses the Fermi level, while the spin‐down channel has a bandgap. More interestingly, the wide half‐metallic bandgaps and spin bandgaps make them have important implications for the preparation of spintronic devices. At last, it also explore the effect of biaxial strain from ‐14% to 10% on the magnetism of the Cr2AsP monolayer. There appears a transition from FM to antiferromagnetic (AFM) at a compressive strain of ‐10.7%, originating from the competition between the indirect FM superexchange interaction and the direct AFM interaction between the nearest neighboring Cr atoms. Additionally, when the compressive strain is ‐2% or the tensile strain is 6%, the semiconducting Cr2AsP becomes a half‐metallic material. These charming properties render the Janus Cr2AsP monolayer with great potential for applications in spintronic devices.

Tuning the magnetic properties of nonmagnetic monolayer Mo2C by doping and adsorption

For purpose of probing doping and adsorption induced ferromagnetism in nonmagnetic behavior of Mo2C monolayer, the electronic and magnetic properties of a transition metal atom (TM = V, Cr, Mn, Fe, Co, Ni) doped/adsorbed in/on Mo2C monolayer are researched by first principles methods. Firstly, both pristine and TM-doped/adsorbed in/on Mo2C monolayer show the metallic character. For Mn/Co-doped Mo2C monolayer, they present ferromagnetism with the total magnetic moments of 0.656 μB and 0.722 μB, which mainly come from the 3d electrons of Mn and Co sites. Moreover, the Cr/Mn/Fe/Co atom adsorption on Mo2C monolayer exhibit spin-polarized character. The exchange splitting in the d shell is discovered in Cr/Mn/Fe/Co-adsorbed onto monolayer Mo2C. Finally, the positive value of MAE for Co-doped and Cr/Mn/Co-adsorbed Mo2C systems indicates an out-of-plane easy axis, whereas the negative MAE value for Mn-doped Mo2C monolayer and Fe adsorption on Mo2C monolayer implies the easy axis in the surface.