Excess Arsenic Research Articles

The mechanism of arsenic behaviour in the soil-plant system and its interaction with biogenic macroelements of plants under conditions of toxic stress

ABSTRACT The mobility of arsenic compounds in the soil-plant system and its interaction with biogenic macroelements K, P, Ca, Mg, Si, S, Na in plants under conditions of toxic stress have been studied. This is illustrated by the wheatgrass Elytrigia repens. It has been established that the root system is responsible for protecting the aerial part of wheatgrass from excess arsenic, and it is of great importance for phytostabilisation of arsenic pollution therefore indicating the increased tolerance of this plant. The intensity of As accumulation in plants depends on its speciation in the soil. Antagonism of the main essential elements (K, P) to the accumulation of As in wheatgrass shoots is observed. It can lead to disruption of metabolic processes in plant cells. It has been shown that changes in the K+/Na + values may lead to violation of osmotic processes in the aerial plant organs and contribute to their degradation not only under salt stress but also under the influence of higher concentrations of As in the plants. In areas intensively contaminated with arsenic, a decrease in the K/Na value in the above-ground organs of wheatgrass can be used as a criterion for the degree of phytotoxicity.

Supplementation of Seaweed Extracts to the Diet Reduces Symptoms of Alzheimer's Disease in the APPswePS1ΔE9 Mouse Model.

We previously demonstrated that diet supplementation with seaweed Sargassum fusiforme (S. fusiforme) prevented AD-related pathology in a mouse model of Alzheimer's Disease (AD). Here, we tested a lipid extract of seaweed Himanthalia elongata (H. elongata) and a supercritical fluid (SCF) extract of S. fusiforme that is free of excess inorganic arsenic. Diet supplementation with H. elongata extract prevented cognitive deterioration in APPswePS1ΔE9 mice. Similar trends were observed for the S. fusiforme SCF extract. The cerebral amyloid-β plaque load remained unaffected. However, IHC analysis revealed that both extracts lowered glial markers in the brains of APPswePS1ΔE9 mice. While cerebellar cholesterol concentrations remained unaffected, both extracts increased desmosterol, an endogenous LXR agonist with anti-inflammatory properties. Both extracts increased cholesterol efflux, and particularly, H. elongata extract decreased the production of pro-inflammatory cytokines in LPS-stimulated THP-1-derived macrophages. Additionally, our findings suggest a reduction of AD-associated phosphorylated tau and promotion of early oligodendrocyte differentiation by H. elongata. RNA sequencing on the hippocampus of one-week-treated APPswePS1ΔE9 mice revealed effects of H. elongata on, amongst others, acetylcholine and synaptogenesis signaling pathways. In conclusion, extracts of H. elongata and S. fusiforme show potential to reduce AD-related pathology in APPswePS1ΔE9 mice. Increasing desmosterol concentrations may contribute to these effects by dampening neuroinflammation.

PSF/GO filtering membrane fabricated by electro-spinning applied on arsenic contaminated underground water

The excess arsenic content in groundwater sources threatens more than 50 million people worldwide. Current water treatment projects use polysulfone nanofiltration membranes (NFM). However, the inherent hydrophilicity of polysulfone nanofiltration membranes causes the membrane fouling problem. This study addresses this problem by improving the hydrophilic and anti-pollution properties by doping graphene oxide (GO) particles in polysulfone(PSF) membranes. Microstructure, morphology, and hydrophilicity of PSF/GO membranes were analyzed by field emission scanning electron microscope (FEFEM), contact angle, and BET surface area analysis. X-ray diffraction (XRD), zeta potential, Energy Dispersive Spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS) were used to analyze the results of the phase structure and element distribution. Permeation tests and adsorption of arsenic experiments were used to study the filtration performance of PSF/GO membranes. The results showed that PSF/GO with high porosity enlarged the specific surface area significantly. The contact angle decreased by only about 7°. Still, the water flux increased from 33.26 L/m2/h to 183.62 L/m2/h, which weakened the effect caused by membrane contamination of the arsenate solution and GO doping on the arsenate adsorption rate of PSF/GO nanofiltration membrane was discussed. The results showed that solution pH was crucial in As (V) adsorption onto PSF/GO and obtaining higher adsorption capacity at higher pH. In an alkaline environment, The adsorption rate increased from 26.71% of pure PSF fiber membrane to 79.83%.

Determination and eco-friendly suppression of fluoride contamination in ground water samples using activated carbon constituents of carica papaya – A natural adsorbent

A significant contribution to increasing water supply comes from ground water and thereby meets the ever increasing demands for almost 90% of the Indian population. Problems are being faced due to the presence of excess fluoride, arsenic and nitrate in groundwater. It is also observed that low levels of fluoride in ground water can help prevent dental cavities, at the same time, higher levels of fluoride can induce dental fluorosis & skeletal fluorosis. Therefore, the fluoride level in ground water needs to be monitored and strictly controlled. Fluoride levels in drinking water should not be more than 1.5 mg/l, as recommended by the WHO and the Bureau of Indian Standards. The ideal fluoride limit for drinking and cooking is 1 mg/l, while 1.5 mg/l is acceptable if there is no other source available. Therefore, the present study analysis the water samples taken from various bore holes (provided with the locations of water sample using a Global Positioning System (GPS)) for all possible parameters like hardness, alkalinity, pH, TDS, EC, chloride, sulphate and fluoride followed by the removal of fluoride contamination in ground water samples using adsorptive filtration technique with the help of a novel, low cost natural adsorbent (activated charcoal obtained from carica papaya leaves). This work aims to determine and suggest a low cost material (Activated carbon obtained from carica papaya leaves) as an effective natural adsorbent for the defluoridation of ground water using the natural adsorbents in experimental testing. In addition to this, a mobile app for providing the related information and a separate Geographical Information System (GIS) mapping are also done. From the adsorption study, a reduction of about 84% fluoride was achieved. The obtained results were compared with the previously reported results. It is found that the prepared activated charcoal from papaya leaves is highly efficient than previously reported methods. Therefore, for the suppression of fluoride content in ground water samples, an eco-friendly reduction method using papaya leaf charcoal is suggested.

Biogeochemical networks in the abandoned historical gold mines affecting mobilization and transport of arsenic in Kolar

Enormous water-logging in ancient abandoned mining shafts of Kolar Gold Fields (KGFs), has largely induced the leaching of sulfide-rich gold minerals contaminating the aquifer system with hazardous elements. Transport of these contaminant has posed threat to the health of the urban population of Kolar township. A detailed survey of borewells, covering radius of 10 km of the KGF was carried out during pre and post-monsoon seasons and various parameters were assessed. Almost 80% of the water samples exceeded the regulatory limits of potable water criteria with excess arsenic (As; 12–127 μg/L), fluoride (F; <0.005 μg/L), dissolved salts (>500 mg/L). Water Quality Index (WQI) was used to understand the overall urban groundwater quality. At the centre of sampling circle core, mineral dissolution was found to be the function of pH, induced by acidophilic sulfur oxidizing bacteria . Modelling of predicted microbial metabolic pathways in metagenomics libraries using PICRUSt, indicated complex functional networks. High expression of siderophore proteins (> 2 cm halo in the chrome azurol test) caused Fe-sequestration, secondary Fe-mineral formation and subsequent release of As. Sulfide bearing Au-rich minerals (Arsenopyrite, Scorodite, Jarosite) were bio-weathered leading to release of H3AsO3+ at low pH, resulted in groundwater composition of Ca–HCO3 type and Ca–Na–HCO3 or Ca–Mg–Cl type.

Compressibility, Metallization, and Relaxation in Nonstoichiometric Chalcogenide Glass g-As3Te2 at High Hydrostatic Pressure versus “Classic” g-As2Te3 Glass

The volume and conductivity of nonstoichiometric chalcogenide glass g-As3Te2 have been investigated at high hydrostatic pressures (up to 8.5 GPa), and results have been compared with earlier data for stoichiometric chalcogenide glass g-As2Te3. Structural and Raman studies of g-As3Te2 glass have revealed a greater significance of As–As pair correlations in the range of medium-range order compared with “classic” chalcogenide glass g-As2Te3. Even at such a large excess of arsenic, a high concentration of “improper” Te–Te neighbors has been observed because of chemical disorder. Under normal conditions, the thermal gap (0.43–0.48 eV) and resistivity (104 Ω cm) of glass g-As3Te2 are greater than those of g-As2Te3. The elastic behavior of g-As3Te2 glass, as well as of g-As2Te3, under compression has been observed at pressures up to 1 GPa, the initial values of bulk moduli for these glasses being nearly coincident. Polyamorphic transformation in g-As3Te2 (with softening of relaxing bulk modulus) is more diffuse and extends to higher pressures (from 1.5 to 4.0 GPa). The metallization process in g-As3Te2 is also more diffuse: metallic conductivity is reached at pressures of 5.5–6.0 GPa. As in the case of the stoichiometric glass, the baric dependences of the bulk modulus exhibit a kink in the pressure range 4–5 GPa. Up to maximal pressures, the volume and resistivity relax logarithmically in time with roughly the same rate as in the case of g-As2Te3. The residual densification of g-As3Te2 after pressure release is roughly twice as high as for g-As2Te3 and equals 3.5%, the conductivity of the compacted glass is about three orders of magnitude higher than that of the as-prepared sample. Under normal conditions, a considerable relaxation of the volume and resistivity has been observed. As for densified g-GeS2 glass, the logarithmic kinetics of this relaxation has been successfully described in terms of our earlier model based on the concept of relaxation self-organized criticality with the activation energy (1.3 eV) remaining unchanged up to 5 × 106 s.

Deposition of Base Ore and Alloy Elements in the Bronze Age Metal in the Trans-Urals

The paper studies the problems of the geochemical specialization of the Bronze Age metal items from the eastern flank of the Ural mining and metallurgical province produced at the end of the third millennium BC — the middle of the second millennium BC in the Abashevo, Sintashta, Koptyakov-Seimino and the Alakul centers. The metal geochemical markers determination was performed by means of a local quantitative chemical composition analysis of 101 solid samples with an electron X-ray microanalyzer. The selection consisted of a representative series of copper and bronze items corresponding to various stages of metallurgical conversion process from the classic archaeological sites of the Trans-Urals. Systematization of the analytical data on the chemistry of items from each metal production center made it possible to identify stable compositions of micro-impurities associated with the base ores and alloys. The Abashevo and the Sintashta culture metal demonstrated a stable correlation of excess arsenic and nickel concentrations, which was partly due to the use of the Trans-Urals ores with a high content of these elements, however, the most significant concentration of arsenic (from 2 to 5 %) was observed in the finished items rather than in refined copper ingots or semi-finished products, which may indicate intentional alloying. Tin alloys in the Sintashta culture were quite rare; they demonstrated the same chemistry as the Seimin-Turbino metallurgical traditions. Large-scale use of tin for refined copper alloying was observed only in the Koptyakov-Seimino and the Alakul series. The Alakul series contained some high-tin alloying compositions close to the ideal tin bronzes (18 % Sn). It is possible that the sources of tin for them were the Kazakhstan and the Central Asia deposits. The only impurity integrating the entire ancient metal series, according to microprobe analysis, was sulfur, due to the sulfide feed stock. Sulfur was deposited in blister from the high-copper (above 20 % Cu) sulfide-silica-carbonate mineral blends that met the Bronze Age metal production criteria. The sources of raw materials were associated with the secondary sulfides of the ophiolite deposits hypergenesis zones in the Trans-Urals.

Fe-biochar for simultaneous stabilization of chromium and arsenic in soil: Rational design and long-term performance

Excess chromium (Cr) and arsenic (As) coexist in soil such as chromated copper arsenate (CCA) contaminated sites, leading to high risks of pollution. Fe-biochar with adjustable redox activity offers the possibility of simultaneous stabilization of Cr and As. Here, a series of Fe-biochar with distinct Fe/C structure were rationally produced for the remediation of Cr and As contaminated soil (BCX-Fe, X represented the biomass/Fe ratio). Adsorption tests showed that maximal adsorption of BC5-Fe for Cr(VI) and As(III) reached 73.7 and 81.3 mg/g. A 90-day soil remediation experiment indicated that the introduction of 3% (w/w) Fe-biochar reduced the leaching state of Cr(VI) by 93.8–99.7% and As by 75.2–95.6%. Under simulated groundwater erosion for 10 years and acid rain leaching for 7.5 years, the release levels of Cr(VI) and As in the BC5-Fe remediated soil could meet the groundwater class IV standard in China (Cr(VI)<0.1 mg/L, As<0.05 mg/L). Accelerated aging tests demonstrated that BC5-Fe had long-term Cr and As stabilization ability. The quenching experiment, EPR, and XPS suggested that the corrosion products of Fe dominated the adsorption and redox reactions, while the O groups acted as electron transfer stations and constituted redox microcirculation in the synchronous uptake of Cr/As. Based on these insights, we believe that our study will provide meaningful information about the application potential of Fe-biochar for the heavy metal contaminated soil remediation.

Enhanced water decontamination from methylated arsenic by utilizing ultra-small hydrated zirconium oxides encapsulated inside gel-type anion exchanger

Methylated arsenic species, including monomethyl arsenate (MMA) and dimethyl arsenate (DMA), are frequently detected in natural waters due to the biochemical methylation of arsenic and various human activities. The presence of MMA/DMA may cause excess total arsenic (>10 μg/L) in drinking water, yet the efficient removal of methylated arsenic still remains challenging. Herein, we reported the utilization of a recently developed nanocomposite HZO@N201 for selective removal of MMA and DMA from water. HZO@N201 contains the gel-type anion exchanger N201, i.e., quaternary ammoniated poly(styrene-co-divinylbenzene) beads, as the host, and the embedded sub-5 nm hydrated zirconium oxide (HZO) for specific adsorption. In comparison with the commercially available nanocomposite HZO@D201, which was prepared through in-situ growth of HZO inside the macroporous anion exchanger D201, the adsorption capacities of HZO@N201 toward MMA and DMA ascended by ∼ 1.9 and ∼ 2.2 times, respectively, mainly benefitting from the sub-5 nm nature of HZO@N201. The competing anions including sulfate, chloride and bicarbonate exerted negligible impact on the removal efficiency toward MMA/DMA, due to inner-sphere complex formation between HZO NPs and MMA/DMA, as verified by SEM-EDS and XPS Zr 3d analysis. The exhausted HZO@N201 was fully regenerated by alkaline treatment for cyclic utilization without obvious efficiency loss. In fixed-bed experiments, HZO@N201 column was able to successively produce ∼ 4000 and ∼ 160 bed volume (BV) clean water from the feeding solutions containing MMA and DMA, while the values for HZO@D201 column were merely ∼ 1600 BV and ∼ 70 BV, respectively.

A study on defect annealing in GaAs nanostructures by ion beam irradiation

In this study, annealing of deep level (EL2) defect in gallium arsenide (GaAs) nanostructures by argon ion beam irradiation has been reported. GaAs nanodots of diameter ranging from 15 to 22 nm were deposited on silicon substrates using the ions of GaAs generated by hot, dense and extremely non-equilibrium argon plasma in a modified dense plasma focus device. GaAs nanodots thus obtained were irradiated by $$\hbox {Ar}^{2+}$$ ion beam of energy 200 keV with varying ion fluences from $$1 \times 10^{13 }$$ to $$5 \times 10^{15}$$ ions $$\hbox {cm}^{-2}$$ in the low energy ion-beam facility. The ion-beam irradiation transformed the as-deposited GaAs nanodots into uniform GaAs nanostructured films of thickness $$\sim $$30 nm. The obtained nanostructured films are polycrystalline with paucity of arsenic antisite (EL2) deep level defect. The excess arsenic present in the as-deposited GaAs nanodots is the main cause of EL2 defect. Raman and photoluminescence measurements of GaAs nanostructured films indicates removal of excess arsenic, which was present in as-deposited GaAs nanodots, thereby suggesting annealing of EL2 defect from the ion-irradiated GaAs nanostructured films. The change in conductivity type from n- to p-type obtained from Hall measurement further confirms annealing of EL2 defects. The ion-irradiated GaAs nanostructured films have low leakage current due to removal of defects as obtained in current–voltage study, which corroborate the annealing of EL2 defect. The defect-free GaAs nanostructured films thus obtained have potential applications in fabrication of highly efficient optoelectronic and electronic devices.

Control of Conductivity of InxGa1-xAs Nanowires by Applied Tension and Surface States.

The electronic properties of semiconductor AIIIBV nanowires (NWs) due to their high surface/volume ratio can be effectively controlled by NW strain and surface electronic states. We study the effect of applied tension on the conductivity of wurtzite InxGa1-xAs (x ∼ 0.8) NWs. Experimentally, conductive atomic force microscopy is used to measure the I-V curves of vertically standing NWs covered by native oxide. To apply tension, the microscope probe touching the NW side is shifted laterally to produce a tensile strain in the NW. The NW strain significantly increases the forward current in the measured I-V curves. When the strain reaches 4%, the I-V curve becomes almost linear, and the forward current increases by 3 orders of magnitude. In the latter case, the tensile strain is supposed to shift the conduction band minima below the Fermi level, whose position, in turn, is fixed by surface states. Consequently, the surface conductivity channel appears. The observed effects confirm that the excess surface arsenic is responsible for the Fermi level pinning at oxidized surfaces of III-As NWs.

Risks and benefits of consuming edible seaweeds.

Recent interest in seaweeds as a source of macronutrients, micronutrients, and bioactive components has highlighted prospective applications within the functional food and nutraceutical industries, with impetus toward the alleviation of risk factors associated with noncommunicable diseases such as obesity, type 2 diabetes, and cardiovascular disease. This narrative review summarizes the nutritional composition of edible seaweeds; evaluates the evidence regarding the health benefits of whole seaweeds, extracted bioactive components, and seaweed-based food products in humans; and assesses the potential adverse effects of edible seaweeds, including those related to ingestion of excess iodine and arsenic. If the potential functional food and nutraceutical applications of seaweeds are to be realized, more evidence from human intervention studies is needed to evaluate the nutritional benefits of seaweeds and the efficacy of their purported bioactive components. Mechanistic evidence, in particular, is imperative to substantiate health claims.

Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates

The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.

The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures

The effect of the arsine content (from 0 to 8 μmol), supplied to a reactor together with hydrogen, on the formation of delta-doped gallium-arsenide structures by the pulsed laser sputtering of a Mn target is investigated. It is found that an arsine molar fraction of ~2.5 μmol in the reactor atmosphere during the formation of a Mn delta-doped GaAs layer allows one to obtain single-crystal epitaxial structures with the lowest layer resistance and a ferromagnetic-paramagnetic phase transition temperature of about 40 K. Increasing the arsine content to 8 μmol or the absence of arsine in a hydrogen flow leads to a significant increase in the layer resistance in the temperature range below 150 K and a decrease in the Curie temperature. In the first case, this may be due to partial compensation of the hole conductivity by donor-type defects formed as a result of an excess of arsenic on the growing surface (arsenic atoms in Ga positions or in interstitial positions). In the second case, when no arsine is supplied to the reactor, the growth surface is likely to be enriched with gallium atoms, which makes the incorporation of Mn into the Ga sublattice difficult.

Adsorptive removal of As(V) by crawfish shell biochar: batch and column tests.

As a toxic and metalloid substance, excess arsenic (As) can cause serious harm to the environment and public health. In this work, crayfish shell biochar (CFS450) and modified biochar (MCFS450) were prepared to remove As(V) from aqueous solutions under various conditions. Compared to CFS450, MCFS450 had a higher specific surface area, better pore structure, and higher As(V) adsorption capacity. Based on the Langmuir model, its maximum As(V) adsorption capacity was 17.2mg/g. The biochar had a large number of surface functional groups such as C-O, O-H, and -OH. After modification, a certain mass of ZnO nanoparticles existed on MCFS450, which increased positive charge on the surface and promoted the adsorption of As(V). As the temperature rose, the adsorption capacity increased, suggesting the adsorption was endothermic. Under low PH conditions, the adsorption effect was better. When Cl-, HCO3-, SO42-, and PO43- respectively existed, the adsorption capacity decreased, indicating that As(V) competed with other anions. The column adsorption experiments showed that Thomas, Yoon-Nelson, and Adams-Bohart models can be expressed as a unified model (EXY model). The EXY model can be used for the design of biochar-based filter for As(V) removal, providing a theoretical basis for practical production applications. Graphical abstract Experimental setup and results of column adsorption.

Unified mechanism of the surface Fermi level pinning in III-As nanowires

Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary AlxGa1−xAs (0 ≤ x ≤ 0.45) and GaxIn1−xAs (0 ≤ x ≤ 1) alloys is pinned at the same position of 4.8 ± 0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the AlxGa1−xAs and GaxIn1−xAs nanowires leads to the accumulation of an excess of arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.

Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (&amp;gt;1017/cm3) along with diffused germanium donors whose concentration (&amp;gt;&amp;gt;1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

Влияние состава газа-носителя в процессе роста дельта-слоя Mn на электрические и магнитные свойства GaAs-структур

AbstractThe effect of the arsine content (from 0 to 8 μmol), supplied to a reactor together with hydrogen, on the formation of delta-doped gallium-arsenide structures by the pulsed laser sputtering of a Mn target is investigated. It is found that an arsine molar fraction of ~2.5 μmol in the reactor atmosphere during the formation of a Mn delta-doped GaAs layer allows one to obtain single-crystal epitaxial structures with the lowest layer resistance and a ferromagnetic-paramagnetic phase transition temperature of about 40 K. Increasing the arsine content to 8 μmol or the absence of arsine in a hydrogen flow leads to a significant increase in the layer resistance in the temperature range below 150 K and a decrease in the Curie temperature. In the first case, this may be due to partial compensation of the hole conductivity by donor-type defects formed as a result of an excess of arsenic on the growing surface (arsenic atoms in Ga positions or in interstitial positions). In the second case, when no arsine is supplied to the reactor, the growth surface is likely to be enriched with gallium atoms, which makes the incorporation of Mn into the Ga sublattice difficult.

Электрические свойства GaAs нитевидных нанокристаллов, выращенных на гибридных подложках графен/SiC

AbstractThe electrical properties of GaAs nanowires grown on a 6 H -SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.