Excellent Thermoelectric Performance Research Articles

GaInX3(X = S; Se; Te): ultra-low thermal conductivity and excellent thermoelectric performance

Abstract Seeking intrinsically low thermal conductivity materials is a viable strategy in the pursuit of high-performance thermoelectric materials. Here, by using first-principles calculations and semiclassical Boltzmann transport theory, we systemically investigate the carrier transport and thermoelectric properties of monolayer Janus GaInX3 (X = S; Se; Te). It is found that the lattice thermal conductivities can reach values as low as 3.07 Wm−1K−1, 1.16 Wm−1K−1 and 0.57 Wm−1K−1 for GaInS3, GaInSe3, and GaInTe3, respectively, at room temperature. These notably low thermal conductivity is attributed to strong acoustic-optical phonon coupling caused by the presence of low-frequency optical phonons in GaInX3 materials. Furthermore, by integrating the characteristics of electronic and thermal transport, the dimensionless figure of merit ZT can reach maximum values of 0.95, 2.37, and 3.00 for GaInS3, GaInSe3, and GaInTe3, respectively. Our results suggest monolayer Janus GaInX3 (X = S; Se; Te) are promising candidates for thermoelectric and heat management applications.

High-pressure induces topology boosting thermoelectric performance of Bi2Te3

Decoupling conductivity (σ) and Seebeck coefficient (S) by electronic topological transitions (ETT) under high pressure (2–4 GPa) is a promising method for bismuth telluride (Bi2Te3) to optimize thermoelectric (TE) performance. However, the S cannot dramatically increase with increasing σ when ETT occurs in Bi2Te3, which impedes optimizing TE performance by utilizing ETT in Bi2Te3. A new strategy of enhanced ETT by combining lattice distortions and high pressure is proposed in this work. The lattice distortions in Bi2Te3 were introduced by high pressure and high temperature (HPHT) treatment to generate surplus dislocations. The in-situ measurements of σ and S at HPHT in Bi2Te3 with lattice distortions show an enhanced ETT effect at 2 GPa, which causes decouple σ and S with an anomalous increase in its |S| about 22%. The ETT effect causes the figure of merit ( ZT ) of Bi2Te3 can be improved to 0.275 at 1.50–2.62 GPa, 460 K, it is more than 62% compared with 0.79 GPa, at 450 K. The excellent TE performance of Bi2Te3 arising from the lattice distortions can result in local non-hydrostatic pressure which enhances ETT under high pressure. This work provides a new strategy to enhance ETT to decouple σ and S , and search for better TE materials from the pressure dimension in the future.

N‐Type CuIn5Se8‐Based Thermoelectric Materials with All‐Scale Hierarchical Architectures

AbstractCopper (Cu)‐based thermoelectric (TE) materials have attracted great attention from both scientific and industrial societies, but for a long time, their real applications are greatly limited by the lack of high‐performance n‐type Cu‐based TE materials. Most recently, the novel n‐type Cu‐based TE material, CuIn5Se8, has been discovered to show a record‐high TE figure‐of‐merit (zT) to match the state‐of‐the‐art p‐type Cu‐based TE materials. However, the physical origin of such high zT is still unclear due to its complex phase compositions and crystal structures. In this work, it is revealed that the excellent TE performance is mainly contributed by the intrinsically ultralow lattice thermal conductivity originating from the unique all‐scale hierarchical architecture. It covers the ranges from atomic‐scale cation disorder in the tetragonal CuIn5Se8 phase and nanoscale diversified stacking units and stacking sequences in the hexagonal CuIn5Se8 phase, to mesoscale grain boundaries between the tetragonal phase and hexagonal phase. Doping Br at the Se‐sites can largely tune the electrical transports of CuIn5Se8 while maintaining the ultralow lattice thermal conductivity, leading to high zT reaching the optimal value predicted by the single parabolic model. This work will guide the investigation of n‐type Cu‐based TE materials in the future.

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

AbstractThermoelectric materials are widely researched for their energy conversion capabilities in the fields of power generation and refrigeration. And a superior thermoelectric conversion efficiency requires an excellent power factor and low thermal conductivity. Herein, a remarkable thermoelectric figure of merit（ZT） ∼ 2.6 at 673 K is realized in GeTe with 20% addition of CuSbSe2. Multiple synergistic effects of CuSbSe2 alloying collectively contribute to the excellent thermoelectric performance in GeTe. CuSbSe2 alloying effectively tunes ultrahigh carrier density of GeTe to the optimum. The introduction of Cu, Sb, and Se atoms create numerous point defects that scatter high‐frequency phonons. Additionally, surplus CuSbSe2 facilitates the formation of copper‐selenium phases, which embed at grain boundaries and generate interfaces after sintering. Combining the planar defects evolved from Ge vacancies, multi‐dimension defects effectively scatter multiple frequency phonons. An extraordinarily low lattice thermal conductivity of 0.3 Wm−1 K−1 at 673 K is obtained, approaching the theoretical estimation predicted by Cahill model. Eventually, the peak conversion efficiency of 7.4% is obtained in segmented device with ΔT of 419 K. The commingled effects of CuSbSe2 in GeTe further open up an elitist route to designing high‐performance materials.

Ultralow Glassy Thermal Conductivity and Controllable, Promising Thermoelectric Properties in Crystalline o-CsCu5S3.

We thoroughly investigated the anharmonic lattice dynamics and microscopic mechanisms of the thermal and electronic transport characteristics in orthorhombic o-CsCu5S3 at the atomic level. Taking into account the phonon energy shifts and the wave-like tunneling phonon channel, we predict an ultralow κL of 0.42 w/mK at 300 K with an extremely weak temperature dependence following ∼T-0.33. These findings agree well with experimental values along with the parallel to the Bridgman growth direction. The κL in o-CsCu5S3 is suppressed down to the amorphous limit, primarily due to the unconventional Cu-S bonding induced by the p-d hybridization antibonding state coupled with the stochastic oscillation of Cs atoms. The nonstandard temperature dependence of κL can be traced back to the critical or dominant role of wave-like tunneling of phonon contributions in thermal transport. Moreover, the p-d hybridization of Cu(3)-S bonding results in the formation of a valence band with "pudding-mold" and high-degeneracy valleys, ensuring highly efficient electron transport characteristics. By properly adjusting the carrier concentration, excellent thermoelectric performance is achieved with a maximum thermoelectric conversion efficiency of 18.4% observed at 800 K in p-type o-CsCu5S3. Our work not only elucidates the anomalous electronic and thermal transport behavior in the copper-based chalcogenide o-CsCu5S3 but also provides insights for manipulating its thermal and electronic properties for potential thermoelectric applications.

Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective.

Thermoelectric technology, which enables a direct and pollution-free conversion of heat into electricity, provides a promising path to address the current global energy crisis. Among the broad range of thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in thermoelectric community in light of inherently ultra-low lattice thermal conductivity, controllable electronic transport properties, excellent thermoelectric performance across various temperature ranges, and a degree of ductility. This review epitomizes the recent progress in AgCuQ-based thermoelectric materials, from the optimization of thermoelectric performance to the rational design of devices, encompassing the fundamental understanding of crystal structures, electronic band structures, mechanical properties, and quasi-liquid behaviors. The correlation between chemical composition, mechanical properties, and thermoelectric performance in this material system is also highlighted. Finally, several key issues and prospects are proposed targeting further optimizing AgCuQ-based thermoelectric materials. This article is protected by copyright. All rights reserved.

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Abstractn‐type Mg3(Sb, Bi)2 has excellent room temperature thermoelectric performance, which is, however, severely restricted by the negatively charged Mg vacancies that significantly deteriorate the carrier mobility. Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials; In Mg‐rich areas, interstitial Mn dominates which effectively reduces the migration and accumulation of Mg vacancies, while in Mg poor areas, interstitial Mn switches to substitutional sites that directly compensate for the negative charge. All the Mn centers possess Jahn–Teller inactive positions, leading to an ultra‐stable room temperature thermoelectric performance with a leading ZT up to 0.97. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance.

Realizing high-efficiency thermoelectric module by suppressing donor-like effect and improving preferred orientation in n-type Bi2(Te, Se)3

Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi2Te3 stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi2Te3 has seriously hindered the development of Bi2Te3-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi2Te3 polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi2Te2.7Se0.3, and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZTave of 1.22 across the temperature range of 300–425 K are obtained. The thermoelectric generator (TEG, 7-pair) and thermoelectric cooling (TEC, 127-pair) modules were fabricated with our n-type textured Cu0.01Bi2Te2.7Se0.3 coupled with commercial p-type Bi2Te3. The TEC module demonstrates superior cooling efficiency compared with the commercial Bi2Te3 device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi2Te3-based TEG modules.

Effects of Ag off-stoichiometry on mechanical and thermoelectric properties of ductile AgCuSe0.6S0.4

Recently, AgCuSe-based ductile inorganic thermoelectric (TE) materials have attracted great interests because they can simultaneously achieve excellent TE performance and good deformability at room temperature. The composition-performance relationship of p-type AgCuSe-based ductile inorganic TE materials have been systematically investigated, but the related investigation on n-type AgCuSe-based ductile inorganic TE materials is still absent. In this work, a series of n-type ductile Ag1+xCuSe0.6S0.4 (x = −0.02, −0.01, 0, 0.01, and 0.02) samples are prepared. The effects of Ag off-stoichiometry on the phase composition, mechanical, and TE properties are systematically investigated. The crystal structure of AgCuSe0.6S0.4 can accommodate a small amount of Ag-excess to maintain the phase purity, but very little Ag-deficiency can induce the formation of secondary phases. The Ag off-stoichiometry has little influence on the mechanical performance. Introducing Ag-excess can increase the carrier concentration to optimize the electrical conductivity and power factor, leading to enhanced TE figure-of-merit (zT). The zT of Ag1.02CuSe0.6S0.4 is 0.17 at 300 K. The six-couple in-plane flexible TE device fabricated based on Ag1.02CuSe0.6S0.4 demonstrates high output performance that is superior to the organic flexible TE devices. This work deepens the understanding on the novel AgCuSe-based ductile inorganic TE materials.

Weak interatomic interactions induced low lattice thermal conductivity in 2D/2D PbSe/SnSe vdW heterostructure

Inspired by the excellent thermoelectric performance of two-dimensional (2D) PbSe and SnSe monolayers, the thermal and electronic transport properties of 2D/2D PbSe/SnSe heterostructure is theoretically evaluated using first-principles calculations and Boltzmann transport theory. An indirect bandgap of 1.06 eV for the PbSe/SnSe heterostructure is calculated by the combination of Heyd-Scuseria-Ernzerhof (HSE06) functional and spin-orbit coupling (SOC) effect. The mechanical, thermal and dynamic stabilities of the PbSe/SnSe heterostructure are further demonstrated by the elastic modulus, ab initio molecular dynamics (AIMD) simulations and phonon dispersion curves, respectively. The honeycomb-like wrinkled structure introduce the asymmetry at the interface of the PbSe/SnSe heterostructure, thereby leading to enhanced phonon boundary scattering. Concurrently, the antibonding states originated from the weak interatomic interactions within PbSe/SnSe heterostructure also lead to strong anharmonicity. This synergistic effect of pronounced scattering and heightened anharmonicity contributes to the low lattice thermal conductivity of PbSe/SnSe heterostructure. The thermoelectric properties of PbSe/SnSe heterostructure are further investigated along the x- and y-direction, which reveals that the p-type PbSe/SnSe heterostructure attains an optimal dimensionless figure-of-merit (ZT) of 2.6 at 900 K along the y-direction. Our present study not only offers the fundamental insights into the thermal and electronic transport properties of the PbSe/SnSe heterostructure, but also provides an effective and feasible strategy for the design of 2D layered heterostructures as promising thermoelectric materials.

Phonon mode softening and band convergence induced significant enhancement of thermoelectric performance in strained CdI2-type SnI2 monolayer

Monolayer group IVA metal halides have attracted intensive attention for their excellent thermoelectric performance. Recently, the CdI2-type SnI2 monolayer has been successfully fabricated by molecular beam epitaxy for the first time. The universal two-dimensional growth behavior on different substrates, motivates strain engineering on its thermoelectric performance. Herein, the structure stability and thermoelectric properties of SnI2 monolayer under different strains are systematically investigated, based on first-principles calculations combined with Boltzmann transport theory. The investigation shows that the tensile strain can simultaneously induce phonon mode softening and band convergence, resulting in a significant enhancement in thermoelectric performance. The phonon mode softening for ZA and optical branches further enhances lattice anharmonicity and a reduced thermal conductivity of ∼0.14 Wm−1K−1 at 300 K (∼0.05 Wm−1K−1, 800 K) can be obtained. Additionally, band convergence in valence band improves the Seebeck coefficient and increases power factor. Under +2 % tensile strain, the optimal ZT values of SnI2 monolayer for p-type doping are substantially enhanced up to 3.05 (300 K) and 5.06 (800 K), which are increased by ∼98 % and ∼50 % compared to the case without strain. Our results reveal the close relationship between the phonon mode softening and enhanced anharmonicity, and provide the physical insights into the understanding of the modulation of thermoelectric properties of monolayer SnI2, shedding light on substantially optimizing the thermoelectric performance of monolayer group IVA metal halides family.

First-principles investigation of structural, electronic and thermoelectric properties of SmMg2X2 (X = P, As, Sb, Bi) zintl compounds

Structure complexity, adequate electronic character and congenital lower thermal conductivity of zintl phases result in designing thermoelectrics of tremendous efficiency. Such qualities of zintl phases embolden us to present a detailed study of SmMg2X2 (X = P, As, Sb, Bi) zintl compounds by first principles. The structural characteristics fit well with the existing data. Electronic properties of titled compounds are scrutinized by adopting PBE-GGA, TB-mBJ and hybrid (YS-PBE0) potentials. The band structure calculations through TB-mBJ and hybrid (YS-PBE0) proclaim the semiconducting behavior of compounds and there is a shrinkage of band gap by changing X anion from P to Bi. The density of states (DOS) calculation reveals that there is a major contribution of Sm-f states and Mg atom in valence band while in conduction band, the prominent role is offered by Sm-d states and p states of X anion. Similarly, the temperature-dependent thermoelectric properties are scrutinized by using BoltzTraP2 code embedded within WIEN2k software for with and without spin–orbit coupling (SOC) and also through hybrid (YS-PBE0) functional. SOC, but even more hybrid functional, has been shown to have a significant effect on the transport behavior. Optimized values of carriers’ concentration are achieved which subsidize thermoelectric parameters like power factor (PF), Seebeck coefficient ([Formula: see text] and thermoelectric figure of merit (ZT) at elevated temperature. The compounds show excellent thermoelectric performance in the studied temperature range.

Unveiling the temperature-dependent thermoelectric properties of the undoped and Na-doped monolayer SnSe allotropes: a comparative study

Motivated by the excellent thermoelectric (TE) performance of bulk SnSe, extensive attention has been drawn to the TE properties of the monolayer SnSe. To uncover the fundamental mechanism of manipulating the TE performance of the SnSe monolayer, we perform a systematic study on the TE properties of five monolayer SnSe allotropes such as α-, β-, γ-, δ-, and ε-SnSe based on the density functional theory and the non-equilibrium Green’s functions. By comparing the TE properties of the Na-doped SnSe allotropes with the undoped ones, the influences of the Na doping and the temperature on the TE properties are deeply investigated. It is shown that the figure of merit ZT will increase as the temperature increases, which is the same for almost all the Na-doped and undoped cases. The Na doping can enhance or suppress the ZT in different SnSe allotropes at different temperatures, implying the presence of the anomalous suppression of the ZT. The Na doping induced ZT suppression may be caused basically by the sharp decrease of the power factor and the weak decrease of the electronic thermal conductance, rather than by the decrease of the phononic thermal conductance. We hope this work will be able to enrich the understanding of the manipulation of TE properties by means of dimensions, structurization, doping, and temperature.

Abnormal Thickness-Dependent Thermal Transport in Suspended 2D PdSe2.

Research on 2D materials originally focused on the highly symmetrical materials like graphene, h-BN. Recently, 2D materials with low-symmetry lattice such as PdSe2 have drawn extensive attention, due to the interesting layer-dependent bandgap, promising mechanical properties and excellent thermoelectric performance, etc. In this work, the phonon thermal transport is studied in PdSe2 with a pentagonal fold structure. The thermal conductivity of PdSe2 flakes with different thicknesses ranging from few nanometers to several tens of nanometers is measured through the thermal bridge method, where the thermal conductivity increases from 5.04W mk-1 for 60nm PdSe2 to 34.51W mk-1 for the few-layer one. The atomistic modelings uncover that with the thickness thinning down, the lattice of PdSe2 becomes contracted and the phonon group velocity is enhanced, leading to the abnormal increase in the thermal conductivity. And the upshift of the optical phonon modes contributes to the increase of the thermal conductivity as well by creating less acoustic phonon scattering as the thickness reduces. This study probes the interesting abnormal thickness-dependent thermal transport in 2D materials, which promotes the potential thermal management at nanoscale.

Effects of Pd atom vibration in the Sr–Te octahedral interstitial space in Zintl compound SrPdTe on lattice anharmonicity and thermoelectric properties

Based on first-principles calculations, the current study deeply explores the thermoelectric properties of the Zintl compound SrPdTe. We found that the anharmonic vibration of Pd atoms plays an important role in the quartic anharmonic effect and the temperature dependence of the thermal conductivity. In the crystalline structure, Sr atoms form octahedra with eight surrounding Te atoms, while Pd atoms are located in the gaps between the octahedra. This structure makes the strong atomic mean square displacement of Pd atoms the main factor leading to the ultralow thermal conductivity. The study also reveals the effects of phonon frequency renormalization and four-phonon scattering on heat transfer performance. Even considering the spin–orbit coupling effect, multiple secondary valence band tops maintain the power factor of the material at high temperatures, providing a potential opportunity for achieving excellent thermoelectric performance.

Batch Fabrication and Interface Stabilization Accelerate Application of Skutterudite Thermoelectric Module for Power Generation

AbstractTo achieve the commercial application of high‐performance skutterudite (SKD) thermoelectric (TE) devices, breakthroughs in the batch fabrication of TE material and the realization of its stable bonding to the barrier layer are necessary. In this work, the large‐scale SKD bulks with excellent TE performance and decent homogeneity are prepared by melt‐spinning (MS) combined with a hot pressing process. Then, a modified two‐step sintering method is employed to effectively suppress the degree of initial interfacial reaction, resulting in a barrier layer/SKD joint that exhibits low contact resistivity (≈2µΩ·cm2) and high bonding strength (≈30 MPa) with no significant change after aging at 773 K for 30 days. Encouragingly, the joints welded with Mo50Cu50 electrodes also show high stability under the same aging conditions. Finally, the as‐fabricated 8‐pair module shows a highly competitive conversion efficiency of 9% under a temperature difference of 580 K. In addition, during a 360 h aging test with hot‐side temperature of 773 K, the module shows excellent stability. Overall, this work paves the way for batch fabrication of high‐performance SKD using MS and lays a solid foundation for the stable operation of SKD‐based modules.

Excellent thermoelectric performance of layered trigonal crystals XPt2Se3 (X = K, Rb)

Thermoelectrics (TEs) have been considered a sustainable and eco-friendly energy technology. However, due to limitations in energy conversion efficiency, TE devices have not yet been widely adopted. Here, we proposed a class of TE materials, trigonal XPt2Se3 (X = K, Rb), with the same crystal structure as Bi2Te3. At room temperature, with quartic anharmonicity correction, the lattice thermal conductivity (κL) of KPt2Se3 and RbPt2Se3 in the x-direction is only 0.57 and 0.46 W m−1 K−1, respectively. The ultralow κL arises from their layered structure, strong lattice anharmonicity, weak bonding nature, rattling motion of guest alkali metal atoms, and large scattering space. Simultaneously, the large density of states contributes to large power factors. At 800 K, both under n-type and p-type doping, KPt2Se3 exhibits ZT values that can exceed 4 in specific directions, while RbPt2Se3's ZT values can surpass 3, which is significantly higher than traditional TE materials. Our research not only elucidates that the layered trigonal crystals XPt2Se3 (X = K, Rb) represent a category of potential TE materials with ultralow κL and high TE performance but also provides directions for exploring TE materials.

Role of atypical temperature-responsive lattice thermal transport on the thermoelectric properties of antiperovskites Mg3XN (X = P, As, Sb, Bi)

Antiperovskite materials have garnered significant attention due to their rich array of physical properties. In this study, we undertake a theoretical exploration into the phase stabilities, and the thermal and electronic transport properties of magnesium-based antiperovskite Mg3XN (X = P, As, Sb, and Bi) based on density functional theory (DFT) calculations, aiming at designing promising thermoelectric materials. The Mg3PN and Mg3AsN possess potential lattice distortion and strong quartic anharmonicity associated with the tilting displacement of Mg6N octahedra. After phonon renormalization, the thermal conductivity of Mg3PN and Mg3AsN exhibits relatively subdued temperature responsiveness with T−0.47 and T−0.62, respectively. Of note, the thermal conductivity of Mg3BiN drops the lowest at 900 K because of its distinctive rattle-dominated flat vibrational modes and strong temperature responsiveness with T−0.96, despite having a high initial value. Moreover, the combination of multiple degeneracy pockets and lighter dispersion band edges in Mg3XN ensures high Seebeck coefficient and impressive electronic conductivity, respectively. Ultimately, Mg3BiN achieves the optimal power factor, which also guarantees its excellent thermoelectric performance with the ZT values of 1.03 and 1.01 for n-type and p-type at 900 K, respectively. Our findings shed light on the significant impact of unconventional temperature-responsive lattice thermal conductivity on thermoelectric materials for high-temperature applications.

Developing a Multiband Electronic Band Structure Model and Predictive Maps for Bismuth-Rich Mg3(Sb1-xBix)2 Thermoelectric Materials.

In recent years, bismuth-rich Mg3(Sb1-xBix)2 (x = 0.5-0.8) compositions have generated significant interest due to their excellent thermoelectric (TE) performance near room temperature, making them potential applicants for recovery of low-grade waste heat. The superior performance in these materials is due to its complex electronic band structure (EBS) with presence of multiple near degenerate bands close to the conduction band edge. The position and curvature of these bands strongly depend on the alloy composition, doping amount as well as temperature. Thus, identifying optimal material compositions to get the best TE performance depends on an understanding of the temperature dynamics of EBS and forms the objective of this work. Mg3Sb0.6Bi1.4 (x = 0.7) is chosen for this study due to its reported high near room temperature performance, and compositions with varying doping concentrations (Te used as dopant) have been synthesized. EBS parameters like effective mass and deformation potential of bands, interband separation and band gap values have been estimated using a recently developed refinement approach. Refinement results indicate that the interband separation between conduction bands to be a function of both temperature and doping concentration. Further, thermal conductivity (κ) was estimated for all of the compositions. Utilizing the EBS and κ information, predictive 3D maps indicating the variation in zT (TE figure of merit) with doping concentration and temperature have been generated. The 3D maps reveal an interesting surface topography with a broad peak zT region. This observation explains why these materials have high TE performance and are less sensitive to doping inhomogeneities. Our results provide detailed EBS information and fundamental insights on the TE properties of Mg3Sb0.6Bi1.4. Further, the proposed technique can be utilized to probe other Mg3(Sb1-xBix)2 compositions and TE materials.

Lone-pair electron-induced low lattice thermal conductivity and excellent thermoelectric performance of AuX (X = S, Se, Te) monolayers

We present a detailed study on the phonon thermal transport and thermoelectric (TE) properties of gold monochalcogenide AuX (X = S, Se, Te) monolayers via first-principles calculations and the Boltzmann transport theory. At room temperature, the calculated lattice thermal conductivity (κl) values in the x-direction (y-direction) were determined to be 12.66 (3.59), 6.06 (1.23), and 3.02 (0.40) W/(m·K) for the AuS, AuSe, and AuTe monolayers, respectively. The analysis of scattering matrix elements and anharmonic scattering rates suggested that the presence of strong bond anharmonicity leads to low κl values. This anharmonicity was induced by the nonlinear electrostatic repulsive force between lone-pair electrons (LPEs) surrounding the chalcogen atom and adjacent bonding electron. Furthermore, the AuS monolayer exhibited the highest bond anharmonicity among the three monolayers. This can be attributed to the reduced strength of the electrostatic repulsive force when electronegativity decreased from S to Se and Te. Although the AuS monolayer exhibited the strongest bond anharmonicity, its κl was still the largest, demonstrating that among the factors that influence κl, harmonic factors have a greater effect than anharmonic parameters. When the atomic mass was increased, the phonon frequencies, phonon group velocities, and κl decreased. Benefiting from low κl induced by LPEs, the maximum ZT values of p-type doped AuSe and AuTe monolayers exceeded 1.0 and 2.0 at T = 800 K, respectively. These results not only confirmed that the introduction of LPEs can reduce the lattice thermal conductivity and enhance the TE performance of 2D materials, but also demonstrated the promising potential of the 2D AuX family for applications in high-temperature TE devices.