Excellent Fatigue Endurance Research Articles

Breakdown strength and energy storage properties of epitaxial lead-based relaxor-ferroelectric films over a wide range of film thickness

Herein, we report the effect of film-thickness, ranging from 0.1 μm to 7.0 μm, on the energy storage performance of epitaxial Pb0.91La0.09Zr0.7Ti0.3O3 (PLZT) films grown on silicon substrates. As the PLZT film-thickness increases, polarization is enhanced and reaches a maximum value at a film-thickness of 1.0 μm, while the breakdown-strength reaches its maximum value at 0.5 μm. A film-thickness of 1.0 μm achieves an optimal volumetric recoverable energy-storage density (Ur,V) of 114.4 J/cm3 and an energy-efficiency of 87.3% at 4.7 MV/cm. Contrastingly, a film-thickness of 4.0 μm exhibits the largest stored recoverable-energy capacity over surface-area (Ur,A) of 34.2 mJ/cm2 (Ur,V = 85.4 J/cm3 at 4.05 MV/cm). Moreover, a film-thickness of 4.0 μm displays a large Ur,V value of 66.8 J/cm3, good thermal stability and excellent fatigue-endurance even at an operational temperature of 200 °C. These results suggest that thick PLZT films hold promise as high-performance energy-storage capacitors capable of operating effectively in harsh conditions.

Strong electrocaloric response with ultrawide working temperature span in lead-free BaTiO3-based ceramics by composition design

Solid-state refrigeration technology based on electrocaloric effect provides a cost-effective and convenient approach for microelectronic device cooling. However, the working temperature range of electrocaloric materials is often narrow and incommensurate with that required by many microelectronic devices including computer chips and CPUs. In this work, the working temperature span of electrocaloric response in BaTiO3 ceramics were tuned by the simultaneous introduction of Sr and Hf (abbreviated as BSHT). Through rational variation of Sr and Hf content, not only the Curie temperature is reduced to ∼80 °C, but also the room-temperature phase structure of the ceramics can be effectively tuned from a single rhombohedral phase to coexistence of rhombohedral + orthorhombic or orthorhombic + tetragonal phases. Relaxor behavior of BSHT ceramics is evident by the frequency-dispersion of dielectric permittivity and the increased relaxor diffuseness factor γ. Temperature-dependent Raman spectra confirm that Ba0.85Sr0.15Hf0.06Ti0.94O3 (0.6BSHT) sustain a two-phase coexistence state over a broad temperature range. 0.6BSHT ceramics render a large adiabatic temperature change ΔT of 0.91 K under 40 kV cm−1 with a broad temperature span of ∼57 °C, covering the working temperature window of most microelectronic devices. Moreover, the electrocaloric response of 0.6BSHT shows excellent fatigue endurance, i.e., the adiabatic temperature change shows a trivial degradation of <4.4 % after 106 cycles. This work demonstrates that BaTiO3-based ceramics remain one of the most promising electrocaloric candidates and compositional modification is an effective route to tune the electrocaloric response for fulfilling the requirements of practical applications.

Excellent energy storage performance of Mn-doped SrTiO3-BiFeO3 thin films by microstructure modulation

Dielectric thin film capacitors are expected to be a promising candidate for high-performance energy storage devices due to their high power density, fast charge/discharge speed, and excellent stability. Nevertheless, it remains a challenging endeavor to develop dielectrics with excellent energy storage density comparable to that of commercial batteries. In this work, lead-free 0.8SrTiO3-0.2BiFeO3 (0.8STO-0.2BFO) thin films with coexisting amorphous and nanocrystalline structure were prepared by a sol-gel method. The heat-treatment temperature was adjusted to form polar-nano regions, thereby modulate the breakdown strength and dielectric polarization, and increase the energy storage density. The electric potential, electric field, and current density of the films with different amorphous/crystalline volume fractions were evaluated by the finite element simulation to further verify that the proper crystallization can result in the improved polarization performance and increased breakdown strength of the films, which are beneficial to the enhancement of energy storage performance. Through structural tailoring, the 0.8STO-0.2BFO film annealed at 550 °C demonstrates the optimal energy storage properties with a giant discharge energy storage density of 65 J/cm3 and high efficiency of 75% at room temperature. Simultaneously, a broad temperature stability (20–160 °C), superb operating frequency stability (20 Hz-2 kHz), and excellent fatigue endurance (6.3 ×105) are observed without appreciable degradation of the energy storage performance. The excellent energy storage performance indicates a widespread potential of 0.8STO-0.2BFO films in pulse power applications, such as consumer electronics, microelectronics, and medical devices.

Improvement of fatigue endurance through modulating strain response in BaTiO3–Ca3Ti2O7 composite ceramics

Ferroelectric ceramics are highly desired for applications in energy storage devices due to their fast charge-discharge capability. However, electric field-driven gradual degradation of ferroelectric polarization (i.e., fatigue) inevitably results in a decrease in energy efficiency and energy storage density. Therefore, improving fatigue endurance is one challenge for their practical applications in energy storage devices. Here, we provide a strategy to modulate the strain response to the external electric field, and thus, increase the fatigue endurance by employing hybrid improper ferroelectricc Ca3Ti2O7 ceramic that exhibits a negative piezoelectric effect. We synthesized [Formula: see text] BaTiO[Formula: see text] Ca3Ti2O7 (BT-xCT) ceramics, in which the strain response of ceramics to the electric field gradually decreases with the increasing proportion of Ca3Ti2O7. For BT-0.3CT ceramic, the energy density storage efficiency is improved to 74.95% which is much higher than that of BT-0.1CT (48.07%). The strain response to the external electric field of BT-0.3CT is substantially lowered and almost reaches zero, leading to excellent fatigue endurance ability. This research work paves a route for designing ferroelectric ceramics with smaller strain response and enhanced fatigue endurance ability, which is expected to benefit a wide range of applications of ferroelectric ceramics in various electric capacitors and electric storage devices.

Ultrahigh electrostrain with excellent fatigue resistance in textured Nb 5+-doped (Bi 0.5Na 0.5)TiO 3-based piezoceramics

(Bi_0.5Na_0.5)TiO₃ (BNT)-based lead-free piezoceramics exhibit excellent electric field-induced strain (electrostrain) properties, but often suffer from large hysteresis and poor fatigue resistance, which strongly limit their applications. Here, &lt;00<i>l</i>&gt; textured Nb⁵⁺-doped 0.8(Bi_0.5Na_0.5)TiO₃–0.2(Bi_0.5K_0.5)TiO₃ (0.8BNT–0.2BKT) ceramics with a high degree of texturing (~80%) were prepared by the reactive template grain growth (RTGG) method using Bi₄Ti₃O₁₂ as a template. By the combination of donor doping in the B-site and the RTGG method, the electrostrain performance achieves a significant enhancement. A high electrostrain of 0.65% and a piezoelectric coefficient (<inline-formula> <math display="inline" id="MA1"><mrow><msubsup><mi>d</mi><mrow><mn>33</mn></mrow><mo>*</mo></msubsup></mrow></math></inline-formula>) of 1083 pm/V with reduced hysteresis at an electric field of 6 kV/mm are obtained. No electrostrain performance degradation is observed after unipolar electric field loading of 10⁵ cycles, showing excellent fatigue endurance. These results indicate that the texturing BNT-based lead-free piezoceramics by the RTGG method is a useful approach to developing eco-friendly actuators.

Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory.

Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal-oxide-semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods- direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)-and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices.

Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh Energy Density and Breakdown Strength

AbstractFerroelectric (FE) capacitors exhibiting ultrahigh power densities are widely utilized as electrostatic energy storage devices in pulsed electronic devices. One approach to maximize the discharge energy density (Ud) of capacitors is to increase the breakdown strength (Eb) accompanied with high maximum polarization (Pm) while suppressing the energy loss. However, the inverse relationship between Eb and Pm challenges the simultaneous enhancement of Eb and Ud. To overcome this limitation, FE/relaxor FE (RFE) heterostructure capacitors composed of Co‐doped BaTiO3 (BTCO) and Sn‐doped BaTiO3 (BTS) epitaxial thin film layers to decouple the Eb and Pm values are fabricated and the simultaneous enhancement of the Eb and Ud up to 7.9 MV cm−1 and 117 J cm−3, respectively is achieved. The high Eb and Ud values can be attributed to the suppression of the leakage current at the BTCO/BTS interface, a narrower hysteresis loop contributed by the BTS, and high Pm and Eb from the BTCO layer. Additionally, the BTCO/BTS heterostructure capacitors exhibit excellent fatigue endurance of up to 108 cycles and are thermal stable even at 160 °C. Through properly designing the FE and RFE layers, thermally stable and reliable FE/RFE heterostructure capacitors exhibiting high Ud and Eb can be realized.

Realizing excellent energy storage performance and fatigue endurance in Sr0.7Sm0.2TiO3 modified 0.67BiFeO3-0.33BaTiO3 lead-free relaxor ceramics

Environmentally friendly BiFeO3-based capacitors have attracted great attention in energy storage applications. Herein, a large Wrec of 2.91 J/cm3 and a high η of 85% were obtained under the electric field of 220 kV/cm in (1-x)(0.67BiFeO3-0.33BaTiO3)-xSr0.7Sm0.2TiO3 (BF-BT-xSST) ceramics at x = 0.30. The addition of SST facilitates to enhance the relaxor behavior and suppress the early polarization saturation of ceramics. The breakdown strength of BF-BT-xSST ceramics is enhanced due to the significantly decreased grain size and the increased band gap. More importantly, the BF-BT-0.30SST ceramic exhibits an excellent fatigue endurance (< 1.1%, after 105 fatigue cycles), which is superior to most of previous works. In addition, BF-BT-0.30SST ceramic also shows high thermal and frequency stability, and fast discharge rate (t0.9 < 0.16 μs). We propose that the SST or a combination of SST and Sr0.7Bi0.2TiO3 is a better additive for the BF-based energy storage materials.

Achieving high energy storage density and efficiency simultaneously in Sr(Nb0.5Al0.5)O3 modified BiFeO3 based lead-free ceramics

Environmentally friendly BiFeO3-based capacitors have attracted great attention in energy storage applications. Via a design of crossover relaxor ferroelectric state with high maximum polarization and small remanent polarization at moderate electric fields, a large Wrec of 3.95 J/cm3 and an excellent η of 85.9 % was obtained in 0.85(0.67BiFeO3-0.33BaTiO3)-0.15Sr(Nb0.5Al0.5)O3 crossover relaxor ceramic. The addition of Sr(Nb0.5Al0.5)O3 facilitates to the formation of crossover relaxor ferroelectric state and suppresses the early polarization saturation. The breakdown strength of Sr(Nb0.5Al0.5)O3 modified ceramics is enhanced due to the significantly decreased grain size and the increased band gap. More importantly, the X = 0.15 ceramic exhibits an excellent thermal stability (25–110 °C), frequency stability (1–300 Hz), fatigue endurance (after 105 cycles), and fast discharge rate (t0.9 ∼ 0.108 μs) at 140 kV/cm. These results indicate that the BF-BT-0.15SNA ceramic is a promising dielectric energy storage material.

Electrical Field Driven Structural Evolutions of Polymorphic Nanodomains in Ferroelectric Ba(Zr,Ti)O3 Films

AbstractFilm ferroelectrics possessing large breakdown strength and high energy density hold great promise for compact and efficient power systems. However, it is still unclear how the evolution of their underlying structure engenders their defining energy storage properties. Here, the electrical field‐driven structural evolutions of polymorphic nanodomains in 1400 nm ferroelectric Ba(Zr0.2Ti0.8)O3 (BZT) films by optical second‐harmonic generation, along with X‐ray diffraction and transmission electron microscopy analyses are revealed. The BZT films transform between a remnant state to a charged state with an improved energy efficiency (≈90%) and an excellent fatigue endurance (virtually no loss in energy efficiency and ≈25% loss in stored energy after 107 bipolar cycles @ 1.5 MV cm−1 maximum electric field). Phase separation is significantly increased after charge‐discharge cycles. The performance is attributed to ultra‐adaptive polymorphic nanodomains, which effectively accommodate the concurring elastic and electrical stress fields during electrical switching.

Energy density capability and upconversion luminescence in Er3+/Yb3+-codoping BNT-based ferroelectric thin films

Smart materials with multiple functions are the preferred materials for technological applications in military, medical, aerospace science and technology, and architecture. However, developing newly single-phase material coupling with multiple functions is still subjects with enormous challenge. Herein, the rare-earth elements Er3+/Yb3+ substitution of lead-free 0.7Bi0·5Na0·5TiO3-0.3Sr0·7Bi0·2TiO3 (BNT-SBT) ferroelectric thin films are designed and fabricated to improve energy storage capability and upconversion luminescence. Optimized BNT-SBT thin films achieves superior discharged energy density of 52.4 J/cm3 with high efficiency of 70.2%, as well as excellent temperature stability (RT to 150 °C) and fatigue endurance (107 circles). Additionally, the emission color of BNT-SBT thin films could be controlled through changing Yb3+ ion concentrations. More importantly, the maximum sensor sensitivity of the Er3+/Yb3+ codoped BNT-SBT thin films could reach 0.0049 K−1 at 363 K. This contribution paves a novel avenue for preparing lead-free multifunctional ferroelectric thin films, which are interested in potential application in the field of optoelectronic devices.

Grain size modulated (Na0.5Bi0.5)0.65Sr0.35TiO3-based ceramics with enhanced energy storage properties

• 0.9NBST-0.1BMS lead-free ceramics with W rec = 6.68 J/cm 3 and η = 89.1 % were designed and fabricated. • Small grain size and high activation energy of grain boundary leads to high breakdown field (405 kV/cm). • The energy storage potential ( W rec /E b ) is up to 0.01649 μC/cm 2 . • Excellent fatigue endurance over 10 5 electrical cycles (the W rec variation is less than 1.5%). Ferroelectric ceramics, as a potential candidate for high-power energy storage capacitors, lies in their excellent recoverable energy storage density ( W rec ) and outstanding efficiency ( η ) in practical applications. Herein, a new type of lead-free ceramics (1- x )(Na 0.5 Bi 0.5 ) 0.65 Sr 0.35 TiO 3 - x BiMg 0.5 Sn 0.5 O 3 or (1- x )NBST- x BMS was prepared with the aim of enhancing the breakdown strength ( E b ) and reducing the energy storage loss through grain refinement. It was found that E b of 0.9NBST-0.1BMS reaches 405 kV/cm due to the reduction in the grain size of ceramic and thus the extremely high ratio of grain boundary resistance to grain resistance. Besides, a remarkable energy-storage performance was obtained, that is, W rec and η are ∼ 6.68 J/cm 3 and 89.1% at 405 kV/cm, respectively, along with excellent stability in terms of frequency, temperature, and fatigue endurance. The outstanding energy-storage performance is resulted from modulating the grain size via doping the moderate content of Bi 3+ and Mg 2+ /Sn 4+ , which is beneficial to increase the breakdown field by increasing resistivity under high electric field while increasing the grain boundary activation energy and promote the formation of a relaxor state at the same time. More importantly, energy storage potential (defined as W rec /E b ) is up to 0.01649 μC/cm 2 , being the highest value reported so far for BNT-based ceramics in energy-storage application. Our results pave the way for practical applications of NBST-based ferroelectric capacitors with excellent energy storage performance.

Mechanical characterization of advanced carbon fibre reinforced polymers for down selection of aero-structural materials

Carbon fibre reinforced polymers are widely used in primary and secondary aircraft structures, mainly due to their excellent fatigue endurance and specific strength. Nowadays, improvements related to their manufacturing costs, impact resistance and fracture toughness are pursued through the investigation of new matrix-fibre combinations and the application of cutting-edge manufacturing technologies. This work presents the results of the coupons test campaign that has been conducted to assess the mechanical properties of different advanced carbon fibre reinforced polymers, being compared with those obtained for a composite material traditionally used in aero-structures. The effect of the introduction of innovative elements such as reinforcing-matrix Carbon Nanotubes or acoustic damping veil is evaluated. Moreover, the influence of ageing is assessed through the evaluation of the mechanical properties after specimen environmental conditioning. From the execution of this test campaign, a comprehensive knowledge base of mechanical properties has been generated, enabling the comparative analysis with reference composite and down selection of the materials that will be applied in the regional aircraft fuselage concept developed in Clean Sky 2 JU. The study shown here belongs to the scope of SHERLOC project. The purpose of the project is to perform a down selection of the most advanced composite materials, manufacturing processes and Structural Health Monitoring (SHM) systems that contribute moving towards a Condition-Based Maintenance.

Energy storage properties in a Bi(Mg1/2Ti1/2)O3 modified BiFeO3-Sr0.7Bi0.2TiO3 film

High-performance dielectric capacitor represents an emerging technological goal for energy storage in modern electrical and electronic systems. In this work, we report a lead-free film capacitor based on the Bi(Mg1/2Ti1/2)O3 modified BiFeO3-Sr0.7Bi0.2TiO3 relaxor. A large recoverable energy storage density of 77.5 J/cm3, together with an efficiency of 56.1% is achieved in the film with 15 mol. % Bi(Mg1/2Ti1/2)O3 in composition. The film also exhibits excellent fatigue endurance with a reduction less than 3% over 1 × 108 cycles in both recoverable energy storage density and efficiency. Such good properties are ascribed to the improved electrical insulation and breakdown strength and the enhanced relaxor behavior by introducing the bismuth-based perovskite-like compound.

High capacitive performance at moderate operating field in (Bi0.5Na0.5)TiO3-based dielectric ceramics via synergistic effect of site engineering strategy

Despite a great deal of research efforts on the search for high recoverable energy storage density (Wrec) at high breakdown strength, high voltage operating security and high cost of associated insulation technology are the major barriers to limiting the actual applications of advanced pulse power capacitors, and thus have increased the requirement on the electrostatic energy storage at finite electric field level. Herein, we propose an effective strategy on tailoring energy storage performance under moderate driving field via the synergistic effect of site engineering in (Bi0.5Na0.5)TiO3-based ceramics. Based on extensive experimental researches, a large Wrec (2.78–3.46 J/cm3) and a high efficiency (80–90%) under moderate electric field (<250 kV/cm) have been synchronously attainted in the optimized relaxor ferroelectric ceramics, generating a high energy storage coefficient that exceeds most previously reported dielectric bulk ceramics. Besides, the optimized ceramic possesses good thermal stability (25–200 °C), strong fatigue endurance (after 2 *105 cycles) and outstanding frequency stability (1–500 Hz). More importantly, high discharge density of 1.15 J/cm3, large power density of 65.6 MW/cm3, and ultra-short discharge time of 72 ns with excellent fatigue endurance are also simultaneously achieved. This contribution not only develops a practical lead-free candidate material for electrostatic energy storage, but also offers a feasible approach to design high-efficiency lead-free dielectrics for low electric field high-energy storage applications using synergistic effect of site engineering.

Enhanced energy storage density of Sr0.7BixTiO3 lead-free relaxor ceramics via A-site defect and grain size tuning

• Moderate Bi 3+ content is helpful to enhance activation energy and breakdown field. • Through introducing A-site defect, the slim loop and high Δ P are received in SBT2. • Ultrahigh W rec of 4.77 J/cm 3 and η of 85.7% were obtained in Sr 0.7 Bi 0.2 TiO 3 ceramic. • Sr 0.7 Bi 0.2 TiO 3 ceramic shows good temperature stability at 20–160 °C. • An outstanding fatigue resistance after 10 5 cycles was achieved in Sr 0.7 Bi 0.2 TiO 3 . The application of dielectric capacitors with high energy density is very important to solve the increasingly serious energy crisis. However, the further improvement of energy density is seriously confining by their poor breakdown fields. In this work, outstanding energy storage performance is achieved in Sr 0.7 Bi x TiO 3 (x = 0.1, 0.2, 0.3 and 0.4) ceramics via A-site defect and grain size tuning. It was found that the moderate Bi 3+ content is helpful to reduce sintering temperature and refine grain size, which lead to higher activation energy and breakdown field. Besides, moderate Bi 3+ doping in A-site enhances polarity owing to the hybridizations between 6p orbital of Bi and 2p orbital of O. Thus, a high recoverable energy density of 4.77 J/cm 3 with prominent efficiency of 85.7% at 570 kV/cm is realized in Sr 0.7 Bi 0.2 TiO 3 ceramic. Moreover, the Sr 0.7 Bi 0.2 TiO 3 ceramic also displays superior thermal stability from 20 °C to 160 °C and excellent fatigue endurance over 10 5 cycles. Our results in this work offer a better understanding and design methodology for developing novel high-performance dielectric capacitors.

Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films

Among all dielectrics, antiferroelectric (AFE) materials have attracted wide attention due to the excellent energy-storage performance. In this paper, PbHfO3 (PHO) AFE films were prepared for the first time and the microstructure, AFE property and energy-storage performance were studied. X-ray diffraction analysis indicated that annealing temperature played a key role in the crystallinity and phase composition. Due to the coexistent of fine grains and amorphous phase, PHO AFE films annealed at 650 °C displayed not only optimal energy-storage density and energy efficiency, but also excellent thermal stability and fatigue endurance. Compared with films annealed at 750 °C, the recoverable energy-storage density and energy efficiency in 650 °C annealing samples increased by 50% and 100%, respectively. These results demonstrate that PHO film is a promising candidate for applications in power electronics systems.

Enhanced energy storage performance and thermal stability in relaxor ferroelectric (1‐x)BiFeO3‐x(0.85BaTiO3‐0.15Bi(Sn0.5Zn0.5)O3) ceramics

AbstractLead‐free (1‐x)BiFeO3‐x(0.85BaTiO3‐0.15Bi(Sn0.5Zn0.5)O3) [(1‐x)BF‐x(BT‐BSZ), x=0.45‐0.7] ceramic samples were prepared by solid phase sintering. It is revealed that the pure single‐phase perovskite structure can be obtained in samples with x ≥ 0.6. With increasing x, the measured ferroelectric hysteresis loop becomes gradually slimmed in accompanying with reduced remnant polarization, and a clear ferroelectric‐relaxor transition at x = 0.65 is identified. Furthermore, the measured electric breakdown strength can be significantly enhanced with increasing x, and the optimal energy storage performance is achieved at x = 0.65, characterized by the recoverable energy storage density up to ≈3.06 J/cm3 and energy storage efficiency as high as ≈92 %. Excellent temperature stability (25°C–110°C) and fatigue endurance (&gt;105 cycles) for energy storage are demonstrated. Our results suggest that the BF‐based relaxor ceramics can be tailored for promising applications in high energy storage devices.

Substantially improved energy storage capability of ferroelectric thin films for application in high-temperature capacitors

The BNTZ–0.09BFO thin film shows superior energy density of 124 J cm−3 and efficiency of 81.9%, excellent fatigue endurance (109 cycles) and thermal stability (−100 °C to 200 °C).

Micromechanism of ferroelectric fatigue and enhancement of fatigue resistance of lead zirconate titanate thin films

Ferroelectric random access memory (FeRAM) has been regarded as a promising technology for next-generation nonvolatile storage due to its excellent data storage performance and nonvolatile storage characteristics. However, fatigue degradation properties seriously impede the development and large-scale commercial use of FeRAM. In this paper, the interaction mechanism and enhancement of ferroelectric fatigue in lead zirconate titanate (PZT) thin film are investigated by the first-principles calculations (DFT). Theoretical calculations suggest that the coupling between oxygen vacancies and 180° domain walls in PZT is responsible for ferroelectric fatigue. Oxygen vacancies are more likely to be formed closer to domain wall, the “pinning” between oxygen vacancies and domain wall makes the migration of domain wall difficult, resulting in the suppression of polarization reversal and ultimately fatigue in ferroelectric thin film. The insertion of Ba(Mg&lt;sub&gt;1/3&lt;/sub&gt;Nb&lt;sub&gt;2/3&lt;/sub&gt;)O&lt;sub&gt;3&lt;/sub&gt; (BMN) can absorb the oxygen vacancies in PZT and reduce the concentration of oxygen vacancies, and in doing so, the ferroelectric fatigue problem caused by the “pinning” effect of the oxygen vacancies can be eliminated. Moreover, the PZT thin films are deposited on Pt/Ti/SiO&lt;sub&gt;2&lt;/sub&gt;/Si(100) by the sol-gel method with using BMN buffer layer. The remnant polarization (&lt;i&gt;P&lt;/i&gt;&lt;sub&gt;r&lt;/sub&gt;&lt;italic/&gt;) of PZT film decreases by 51% and the PZT/BMN film remains 85% after 10&lt;sup&gt;10&lt;/sup&gt; cycles. Furthermore, it keeps stable even up to 10&lt;sup&gt;12&lt;/sup&gt; cycles. This paper demonstrates that the PZT/BMN film with excellent ferroelectric and fatigue endurance possesses the promising applications in FeRAM.