Excellent Dielectric Strength Research Articles

真空遮断器搭載72kV高圧空気絶縁GISの開発

SF6 gas has excellent dielectric strength and interruption performance. For these reasons, it has been widely used for gas insulated switchgear (GIS). However, use of SF6 gas has become regulated under agreements set at the 1997 COP3. So investigation and development for GIS with a lower amount of SF6 gas are being carried out worldwide. Presently, SF6 gas-free GIS has been commercialized for the 24kV class. Air or N2 gas is used as insulation gas for this GIS. On the other hand, SF6 gas-free GIS has not been commercialized for 72kV class GIS. Dielectric strengths of air and N2 gas are approximately 1/3 that of SF6 gas. So to enhance insulation performance of air and N2, we have investigated a hybrid gas insulation system which has the combined features of providing an insulation coating and suitable insulation gas. We have developed the world's first 72kV SF6 gas-free GIS.This paper deals with key technologies for SF6 gas-free GIS such as the hybrid insulation structure, bellows for the high pressure vacuum circuit breaker, a newly designed disconnector and spacer and prevention of particle levitation. Test results of 72kV high pressure air-insulated GIS with the vacuum circuit breaker are described.

신경회로망을 이용한 GIS용 단로기의 이상신호 패턴분석

GIS(Gas Insulated Switchgear) is power equipment with excellent dielectric strength and is economy merit in high confidence and stability. But, because of structural characteristics, this is difficult to monitor externally and provide much loss in the event of an accident. Recently, because equipment of GIS is occurring problem of confidence used for a long time, development of diagnosis technique have been importantly recognized. therefore, measurement and analysis of PD much has been generally used for equipment of GIS. But, in case of measurement of PD at field, real trouble signals is difficult to classify noise. Accordingly, a variety of trouble conditions for DS are simulated, and detected signals are analyzed by the application of electrical and mechanical methods. For this analysis, detected signals are accumulated according to phase-magnitude with the application of induction sensor, and then we analyzed the characteristics. For the simulation experiment, we make DS for 170KV GIS and analyze the characteristics of detected signals with the application of neural network algorithm. last, we have measured DS for GIS at field, and then have analyzed detected signals.

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices will be manufactured with SiO2 and Si–O–N for the foreseeable future, continued scaling of integrated circuit devices, essentially the continued adherence to Moore’s law, will necessitate the introduction of an alternate gate dielectric once the SiO2 gate dielectric thickness approaches ∼1.2 nm. It is hoped that this article will prove useful to members of the silicon microelectronics community, newcomers to the gate dielectrics field, practitioners in allied fields, and graduate students. Parts of this article have been adapted from earlier articles by the authors [L. Feldman, E. P. Gusev, and E. Garfunkel, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul’ (Kluwer, Dordrecht, 1998), p. 1 [Ref. 1]; E. P. Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, and M. Green, IBM J. Res. Dev. 43, 265 (1999) [Ref. 2]; R. Degraeve, B. Kaczer, and G. Groeseneken, Microelectron. Reliab. 39, 1445 (1999) [Ref. 3].

Fiber Glass - An Inorganic Insulation

In summing up the characteristics of fiber glass those which make it valuable for electrical insulation are: 1. Noninflammable and highly heat resistant. The operable temperature is limited only by the impregnant used, and there is a very definite temperature range between the operable temperature of organic fabrics and that of heat-resistant impregnants where glass is unique. 2. Exceptionally high tensile strength. 3. Nonhygroscopic. 4. Resists attack by moisture, acids, oils, and corrosive vapors. 5. Good thermal conductivity. 6. Excellent dielectric strength when impregnated. 7. High insulation resistance.