Excellent Dielectric Properties Research Articles

High energy density and efficiency of laminated polymeric blend-based composites via introducing ultra-low content micrometer sheets

Polymeric blend-based composites are promising for dielectric capacitor due to the excellent dielectric and energy storage properties. However, the electric displacement difference (Dmax-Dr) and dielectric constant (εr) of the polymeric blend-based composites are incompatible, which further limits the improvement of the available energy densities (Ue). In this study, we propose the solution-processable laminated polymeric blend-based composites to address this challenge. The concurrent enhancement in Dmax-Dr, εr, Ue and charge-discharge efficiency (η) of designed composites is attributed to the synergistic interaction between macroscopic layered interfaces and microscopic interfaces. The laminated polymeric blend-based composites were fabricated by utilizing a blend of 50 wt% poly(vinylidene difluoride)-hexafluoropropylene (P(VDF-HFP)) and linear poly(methyl methacrylate) (PMMA) as the outer layer and P(VDF-HFP)/PMMA incorporated with an ultralow content alumina-modified strontium titanate plates (SrTiO3@Al2O3) the inner layer. As a result, laminated polymeric blend-based composite with the optimized content (0.5 vol%) delivers a maximum Ue of 14.36 J/cm3 due to highest Dmax-Dr of 7.96 μC/cm2, εr of 6.12 (1 kHz), Eb of 400 MV/m, and η of 76.6 %, outperforms those of representative polymer blend-based composites. Specially, laminated polymeric blend-based composite also exhibits the excellent energy storage reliability of different areas. Therefore, this contribution provides a viable approach to promote polymeric blend-based composites for capacitive energy storage.

Effect of binary ion substitution on the crystal structure and microwave dielectric properties of MgTa2O6 ceramics

AbstractMg1/3A11/3A21/3Ta2O6 ceramics (where A1 and A2 represent Co, Ni, or Zn) were prepared using the solid‐phase reaction route. The results of X‐ray diffraction and Raman tests showed that (Co1/2Ni1/2)2+, (Co1/ 2Zn1/2)2+, and (Ni1/2Zn1/2)2+ ions replaced Mg2+ ions in the lattice of MgTa2O6, resulting in the formation of a pure tri‐rutile structure. All three complex ions could significantly reduce the sintering temperature of the ceramics (by 150°C–200°C) and could broaden the sintering window. The large deviation (48.8%–69.2%) between the porosity corrected relative permittivity εr‐corr. and the theoretical relative permittivity εr‐theo. might be due to the overestimation of the ionic polarizability of Ta5+ by Shannon. (Co1/2Ni1/2)2+ has the most significant effect of increasing the bond energy of ceramic A–O bonds, reducing the τf value from 51 to 36 ppm/°C. In addition, the mechanisms affecting their dielectric properties are discussed based on bond ionicity (fi), full width at half maximum (FWHM) of Raman peak, and bond energy (E). Mg1/3Co1/3Ni1/3Ta2O6 ceramic sintered at 1350°C have the most excellent microwave dielectric properties: εr = 26.8, Q × f = 86,000 GHz, and τf = 36 ppm/°C.

Superhydrophobic Electrospun PI/PTFE Membranes with Ultralow Dielectric Constants for High-Frequency Telecommunication.

High-frequency, high-power, and high-speed telecommunication in a complex environment promotes the development of dielectric materials toward a low dielectric constant, low dielectric loss, good thermal properties, and long-term reliability. Here, polyimide/polytetrafluoroethylene (PI/PTFE) nanofiber membranes with an inherent super hydrophobicity, excellent dielectric properties, good thermal stability, and enhanced tensile strength were prepared via a simple electrospinning strategy and an imidization reaction. The obtained PI/PTFE membranes demonstrate a superlow average dielectric constant of 1.22-1.27 and a dielectric loss of 0.032-0.048 in high frequency, together with an enhanced tensile strength, benefiting from the special nanofiber-bead structure formed in the composite membrane. The mixing of polyamic acid (PAA) and PTFE in the electrospinning solution endows the obtained PI/PTFE nanofiber membrane with a uniform distribution of PTFE and thus an inherent superhydrophobicity with a water contact angle of 156.1 and 159.2° for PI/PTFE-30% and PI/PTFE-40%, respectively. Besides, the hydrophobicity could be kept even after standing more than 10,000 water drops, and the thermal properties exhibited promising results with Tmax = 587 °C and Td5% = 423 °C, rendering these PI/PTFE membranes favorable alternatives for prospective telecommunication.

Influence of casting-warm pressing process on the thermal conductivity of micro–nano-Al2O3 substrate

Alumina substrates are increasingly used for high-power integrated circuits due to their high thermal conductivity, low thermal expansion coefficient, and excellent insulation properties. However, pores in the green tape from the tape casting process reduce the thermal conductivity and permittivity of the sintered ceramic substrate. Researchers have attempted to minimize ceramic porosity with chemical additives or by sintering pure alumina at temperatures above 1650 °C, but these methods often degrade thermal conductivity or quality of substrate evenness. This study proposes a low-cost casting-warm pressing process to densify pure alumina ceramic substrates using micro–nano-mixed alumina powders and sintering at relatively low temperatures. The results indicate that the relative density of the pure alumina ceramic substrate prepared at 1500 °C is 93%, a 4.4% improvement over the tape casting process. Additionally, the thermal conductivity of the alumina substrate from the casting-warm pressing process reaches 15.89 W/(m K), which is 1.4 times higher than that of the tape casting process. Microstructure analysis shows that the casting-warm pressing process with micro- and nano-multi-scale mixed alumina powders forms a novel thermal conduction enhancement mechanism. Large particles in the green tape overlap, while small particles fill the spaces between the large particles. The connected micrometer-sized particle skeletons form high thermal conduction net channels in the substrate, improving the thermal conductivity for heat transfer.

Comprehensive Characterization of Bi1.34Fe0.66Nb1.34O6.35 Ceramics: Structural, Morphological, Electrical, and Magnetic Properties

Recent research in solid-state physics and materials engineering focuses on the development of new dielectric materials, with bismuth-based pyrochlores being already extensively applied in communications technology for their excellent dielectric properties and relatively low sintering temperatures. Herein, the structural, morphological, electrical, and magnetic properties of Bi1.34Fe0.66Nb1.34O6.35 ceramic, prepared by the sol–gel method and sintered at 500 °C, are investigated. The Rietveld refinement of the XRD pattern showed a cubic phase belonging to the space group Fd-3m and a crystallite size of 42 nm. Transmission electron microscopy further confirmed the crystallite size and the homogeneous distribution of Bi, Fe, Nb, and O elements, as evidenced by high-angle annular dark field imaging and STEM-EDX mapping. The morphology of the sample, assessed by scanning electron microscopy, is characterized by submicron-sized spherical particles. Dielectric spectroscopic studies revealed that the dielectric properties, strongly influenced by frequency and temperature, indicate the material’s potential for energy storage due to lower dielectric loss compared to the dielectric constant. The observed relaxation phenomena, confirmed through variations in dielectric loss and loss tangent, highlight the influence of grain boundaries and temperature on electron hopping and charge carrier dynamics. Using SQUID magnetometry, we identified two distinct magnetic phases. The primary phase, corresponding to the Bi1.34Fe0.66Nb1.34O6.35 ceramic, exhibits an antiferromagnetic behavior below its Néel temperature at around 8.8 K. A secondary high-Curie temperature ferrimagnetic phase, likely vestigial maghemite and/or magnetite, was also detected, indicating an estimated fraction below 0.02 wt.%.

Thermosetting boron-nitride-filled polybutadiene composites with enhanced thermal conductivity and good dielectric properties

Low dielectric materials with high heat dissipation, low dielectric constant (Dk), and dielectric loss (Df) are urgently needed to address the issues of signal cross-talk and heat accumulation arising from the rapid development of modern communication technology and the integration of microelectronics. Polyolefins, as hydrocarbon polymers, have shown significant potential due to their excellent low dielectric properties. However, their low polarity and flexible structures limit their thermal conductivity and thermomechanical properties. In this study, we developed a method to prepare thermosetting polybutadiene composites with enhanced thermal conductivity and good dielectric performance by modifying hexagonal boron nitride (h-BN) and hydroxyl-terminated polybutadiene (HTPB) with thermally cross-linkable benzocyclobutene (BCB) groups. The properties of the resulting composites were tailored by varying the filler content. With 30 wt% of the BCB-modified filler, the composite (HB-30) displayed excellent dielectric properties (Dk = 2.70; Df = 1.67 × 10−3 @10 GHz). Meanwhile, it exhibited a thermal conductivity of 0.615 W/mK at 35 °C, which was 7.1 times that of pristine HTPB. It also showed significantly enhanced mechanical properties and thermal stability with a storage modulus of 2.7 GPa and a glass transition temperature (Tg) of 208.5 °C. This method proved effective for preparing polymer composites with enhanced thermal conductivity, heat resistance, mechanical properties and good dielectric properties, making them suitable for high-frequency communication applications.

Zr4+ and Al3+ coordinated cross-linked conductive collagen fibers/solvent-free polyurethane foam with ultra-low reflective electromagnetic shielding properties

In recent years, electromagnetic shielding materials with low reflectance have developed rapidly. However, high material cost, poor bonding fastness, weak mechanical properties and other problems seriously limit its effect in practical use. In this work, flexible conductive collagen fibers (CLF-Zr4+/Al3+-CNTs) were prepared using chromium tanned waste leather as ingredient, carbon nanotubes (CNTs) as conductive filler and transition metal ions as coordination crosslinking agents, and their molecular dynamics were investigated by quantum chemical simulation software. On this basis, a flexible conductive foam with the double layer and double core-clad structure containing carbon nanotubes was constructed using the solvent-free polyurethane (SFPU) chemical foaming technology, and their electromagnetic shielding properties and reflectance were studied. The experiment results showed that when the ratio of CLF-Zr4+/Al3+-CNTs to SFPU polyol is 1:9 and the impregnation times of CNTs are 2, the loading capacity of CNTs in conductive foam is 0.14 mg/cm3, the electrical conductivity is 57.8 S/m, and the thermal conductivity is 0.061 W/(m·K). Meanwhile, when the thickness is 3 cm, the electromagnetic shielding performance is 42.09 dB, and the reflection efficiency is 0.66 %, the lowest reflection efficiency reaches 0.16 % in the experiment. The mechanism of electromagnetic shielding in conductive foams with the double layer and double core-clad structure has been further explored. The experiment results proved that the flexible conductive foam has excellent mechanical properties, stability, heat insulation and flame retardant properties, and has excellent electromagnetic shielding and low reflection characteristics due to its abundant holes, functional group, interface and hierarchical structure.

Exploring Structural and Optical Properties of Nanoparticles of Barium Titanate and Iron doped Barium Titanate and Their Potential Application in Antibacterial Activity

Background: Barium Titanate (BaTiO3) is a good candidate for a variety of applications due to its excellent dielectric, ferroelectric and piezoelectric properties. Methods: Pure and doped Barium Titanate (BTO) nanoparticles have been synthesized by the sol-gel method. Barium hydroxide octahydrate (Ba (OH)2.8H2O) and titanium (IV) iso-propoxide (Ti {OCH[CH3]2}4) were used as starting materials. Apart from pure Barium Titanate nanoparticles, Fe-doped BaTiO3 nanoparticles of three different concentrations: 0.1, 0.2 and 0.3 in mol% were prepared and characterized using X-ray diffraction (XRD), UV visible spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR). Results: From the X-ray diffraction pattern, the particle size was found to be varied in a range of 17-25nm. By using UV visible spectroscopy it was observed that the band gap energy of pure BaTiO3 NP is 3.2eV. As the pure BaTiO3 nanoparticles are doped with 0.1% Fe, the band gap reduces to 3.175eV. For BaTiO3 doped with 0.2% and 0.3% Fe, the band gap energy values are 2.709 and 2.652 respectively. FTIR spectra were used to analyze the vibrational modes of BaTiO3. From the result obtained from FTIR, we can see that the absorption spectrum ranges from 450cm-1-4000cm-1. The prominent peak of pure BaTiO3 is at 500cm-1 which is due to the vibration of the Ti-O band in crystal lattice. For BaTiO3 doped with Fe2O3, the wave number of the absorption peak is shifted from 500cm-1 in pure BaTiO3. The antibacterial studies were conducted on Pseudomonas aeruginosa, Staphylococcus aureus and Escherichia coli. Conclusion: Both pure and iron-doped Barium Titanate showed significant antibacterial properties, confirming the antibacterial property of Barium Titanate nanoparticles.

Enhanced Oxidation Resistance and Interface Stability of Atomic-Layer-Deposited MoNx Electrodes via TiN Passivation for DRAM Cell Capacitor Applications.

The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoNx) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and NH3 plasma for DRAM capacitor electrode applications. Depending on the deposition temperatures of the PEALD MoNx films ranging from 200 to 400 °C, the Mo/N ratio and crystal structure varied, transitioning from the cubic NaCl-B1-type MoN phase with Mo/N ratio of 1.4 to the cubic γ-Mo2N phase with Mo/N ratio of 1.9. Notably, MoNx films grown at 400 °C exhibited low resistivity (435 μΩ·cm), a high work function (5.28 eV), and superior mechanical hardness (11.3 GPa) compared to ALD TiN films. Despite these excellent properties, the PEALD MoNx electrode demonstrated insufficient chemical stability, particularly in terms of oxidation resistance and interface quality with ALD HfxZr1-xO2 (HZO) films. This resulted in poor morphology and the formation of significant oxygen-deficient HZO layers (such as HfO2-x), leading to considerable degradation in the electrical performance of metal-insulator-metal (MIM) capacitors. To mitigate this issue, a thin (2.5-14 nm) ALD TiN layer was introduced as a passivation layer between the MoNx bottom electrode and HZO dielectric. The TiN-passivated MoNx (TiN/MoNx) electrode showed substantially enhanced oxidation resistance and reduced interfacial reactions with the HZO dielectric. Consequently, MIM capacitors with TiN/MoNx bottom electrodes demonstrated outstanding electrical performance, including excellent dielectric properties, low leakage current density, and high mechanical strength. Hence, this study proposes a promising candidates for storage nodes in the next-generation DRAM capacitors.

Structural design and characterization of a new type of organic nonlinear optical flavanone crystal

Two new crystals were designed and obtained: the chalcone derivative HMMP (1-(2‑hydroxy-4-methoxyphenyl)-3-(4-(methylthio)phenyl)prop‑2-en-1-one) and the flavanone derivative 7M4MC (7‑methoxy-2-(4-(methylthio)phenyl)chroman-4-one). Yellow bulk 7M4MC single crystal with dimensions of 3 × 2 × 1 mm3 and orange-yellow needle-like HMMP single crystal were grown by solution evaporation. 7M4MC crystal belongs to the P21 space group of the monoclinic structure, which has a non-centrosymmetric structure. HMMP crystal monoclinic, belongs to the P21/m space group with a centrosymmetric structure. In the 7M4MC molecule, the methoxy and methylthio groups act as electron donors (D) and the carbonyl group acts as an electron acceptor (A), forming a d-π-A-π-D structure with an electron gradient. 7M4MC exhibits a high degree of second-harmonic generation intensity (11 × KDP), a broad transmission range (600–1600 nm, >88 %), an elevated optical energy bandgap (Eg = 2.57 eV), high thermal stability (Tm = 105 °C) and excellent dielectric properties (εr ≈ 2.1). This work not only provides two new crystals but also offers a viable molecular design option by changing the degree of intramolecular distortion by altering the backbone structure.

Effect of Diatomite on the Mechanical and Electrical Properties of Polyurethane/Epoxy Resin Composites

ABSTRACT Epoxy resin is widely utilized for the encapsulation of power semiconductor devices, necessitating excellent insulation properties, mechanical performance, and moisture resistance. In this study, hexadecyltrimethoxysilane was employed to modify diatomite, which was then combined with polyurethane-modified epoxy resin to fabricate a series of filled composites with varying diatomite content. The influence of diatomite content on the mechanical properties, thermal properties, and insulation performance of the polyurethane/epoxy resin composites was investigated. Experimental results showed that, under the synergistic effect of polyurethane and diatomite, the composite containing 4 wt.% diatomite exhibited improvements of 13.95% and 61.11% in tensile strength and flexural strength, respectively, compared to the epoxy resin. The elongation at break and flexural displacement also increased by 22.46% and 68.23%, respectively. Furthermore, the incorporation of diatomite effectively compensated for the thermal losses caused by polyurethane, enhancing thermal stability. Electrical property tests indicated that the addition of diatomite reduced the dielectric constant and conductivity of the epoxy resin while simultaneously improving its breakdown strength.

Structural characteristics, P-V-L theory, Raman spectra, and microwave dielectric properties of (La1-xNdx)2(Zr0.96Ti0.04)3(MoO4)9 ceramics for LTCC applications

This article explores the microwave dielectric properties of (La1-xNdx)2(Zr0.96Ti0.04)3(MoO4)9 (x=0.1,0.3,0.5, and 0.7) ceramics prepared by solid-state reaction. Utilizing the Rietveld refinement technique in XRD, the sample is identified as a trigonal crystal system belonging to the R3¯c space group. SEM analysis indicates that relative density has a significant impact on the εr and Q×f of ceramics. The Q×f values of ceramics are closely related to the FWHM of the Raman spectra. At 750℃, (La0.5Nd0.5)2(Zr0.96Ti0.04)3(MoO4)9 ceramic exhibited excellent dielectric properties: εr = 10.4 (±0.08), Q×f = 149,300 (±3211) GHz, τf = −34.8 (±0.7) ppm/℃. To gain a deeper understanding of the intrinsic mechanisms governing the microwave dielectric properties of ceramics, analysis based on the P-V-L theory reveals that the La(Nd)-O bond and Mo-O bond contribute significantly to εr and Q×f, respectively.

Mechanisms of enhanced performance in Zr4+/Ta5+ codoped rutile-TiO2 ceramics via broadband dielectric spectroscopy.

Aliovalent dopant codoped rutile-TiO2 materials have garnered attention due to their excellent performance properties, characterized by low loss tangent (tanδ), high dielectric permittivity (ε'), and stable ε' over a broad temperature range. This performance is primarily due to the electron-pinned defect-dipoles (EPDDs) of the complex defects [Formula: see text]Ti3+-[Formula: see text]Ti3+BTi. Notably, the excellent dielectric properties in ZrxTa2.5%Ti0.975-xO2 (Zr-TTO) ceramics can be achieved using the traditional mixed oxide method without the EPDDs, due to the absence of A3+ (acceptor doping ions). Instead, the existence of localized free electrons and oxygen vacancies ([Formula: see text]) in Zr-TTO structures, due to doping ions and the sintering process, was confirmed by X-ray photoelectron and Raman spectroscopies. These ceramics exhibited ε'~ 2 × 104 and tanδ < 0.03 at 1kHz and 25°C in the 2.5-10%Zr-TTO samples. Moreover, all ceramics demonstrated a maximum ε' change (∆ε') of less than ±15% over the temperature range suitable for X7R and X8R type ceramic capacitors. Significantly, the change in ε' related to relative humility was calculated to be less than ±0.5% over the range of 50-95% RH, indicating the environmental stability of the dielectric properties, which is essential for capacitor applications. Investigations suggested that at least four mechanisms contributed to this system: the intrinsic effect of ionic polarization, Ti4+ · e- -[Formula: see text]- Ti4+ · e- and Ti4+ · e- - [Formula: see text] defects, interfacial polarization at insulating grain boundaries, and non-Ohmic contact between the surface sample and the metal electrode.

Resolving the Role of Configurational Entropy in the Optimization of Mechanical, Thermal, and Microwave Dielectric Properties of SrLa(Al0.50-xGaxZn0.125Mg0.125Ti0.25)O4 Ceramics.

The demand for high-performance microwave dielectric ceramics has surged with the proliferation of fifth-generation (5G) communication networks. In this work, SrLa(Al0.50-xGaxZn0.125Mg0.125Ti0.25)O4 (x = 0-0.20) ceramics were designed by leveraging the unique properties of SrLaAlO4 ceramics and high-entropy engineering. The effects of configurational entropy (Sconf = 1.23R - 1.54R) on the mechanical, thermal, and microwave dielectric properties of SrLa(Al0.50-xGaxZn0.125Mg0.125Ti0.25)O4 ceramics were investigated. X-ray diffractometer and transmission electron microscope analyses confirmed that each composition belonged to the tetragonal structure with a space group of I4/mmm. Significant improvements in Vickers hardness were observed with increasing Sconf, reaching 8.05 GPa at Sconf = 1.54R compared to 5.64 GPa in SrLaAlO4 ceramics. Additionally, the increasing entropy showed great potential in reducing the thermal expansion coefficient (CTE) from 12.32 to 11.49 ppm/°C. The optimal quality factor (Q × f) of 98,000 GHz was achieved at Sconf = 1.37R, attributed to the optimization of intrinsic lattice energy and infrared-damped modes. The temperature coefficient of resonant frequency (τf) was successfully modified toward zero due to entropy-driven CTE and structural modifications. Excellent microwave dielectric properties with εr = 22.5, Q × f = 98,000 GHz, and τf = -2.0 ppm/°C were obtained at Sconf = 1.37R. This work highlights the potential of entropy-engineering in developing high-performance microwave dielectric ceramics, offering a promising pathway for the advancement of 5G communication components.

Dielectric behavior and defects of nitrogen-containing single crystal diamond films

Single crystal diamond (SCD) film, as a new substrate material, has attracted growing attention because of its low dielectric loss. The nitrogen was usually introduced into microwave plasma chemical vapor deposition (MPCVD) process in order to enhance the growth rate of SCD films. So SCD films with nitrogen were prepared by MPCVD compared with the undoped film. The impurities and defects of diamond films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL). The dielectric behavior of SCD films was measured using the LCR measurement in the frequency range of 1 kHz to 110 MHz. The results indicate that the primary dielectric loss in SCD films is conductivity loss and space charge polarization below 1 MHz, while the main dielectric loss is dipole orientation polarization and electronic relaxation polarization in the frequency range of 1 MHz to 110 MHz. Point defects like substitutional N+, NV− and SiV− exert a significant influence on polarization loss. This is essential to improve the growth of SCD with excellent dielectric properties.

Effect of stretching orientation on the crystalline structure and energy storage properties of poly(vinylidene fluoride) films

Poly(vinylidene fluoride) (PVDF) with a high content of β phase shows great potential for applications in the pulse energy storage field because of its high dielectric constant and breakdown strength. The stretching process can significantly induce the crystal phase transformation and change the structure of the aggregated state. To deeply investigate the influence mechanism of the fabrication process, solution casting (SC), melt stretching (MS), static biaxial orientation (SBO), and continuous biaxial orientation (CBO) were used to fabricate PVDF films. The essential difference between the four technological routes lies in the different forms of tensile orientation imposed. Stretching perpendicular to the machine direction promotes the transition of the original α phase crystals to the β phase. Stretching orientation can regulate the crystalline phase structure of the film and its applicability. The relative fraction of β phase crystals in the PVDF-CBO film reaches 84.1 %, resulting in a much higher dielectric constant (12.22 @1 kHz) than that of the PVDF-SC film (7.16). The continuous biaxially oriented PVDF exhibited excellent insulation properties with a breakdown strength of 759.21 kV/mm. Meanwhile, the CBO film obtained an energy storage density of 16.76 J/cm3 with a charge-discharge efficiency of 80.13 % at 675 kV/mm. This work is of great scientific significance for the in-depth study of the influence of different film-forming processes on the internal structure of films, ranging from laboratory fabrication to industrialized production.

Porous TiO2 microspheres containing MgO nanoparticles/epoxy composite with superior thermal conductivity, EMI shielding, and electrical insulation

With the continuous advancement of electronic devices, the amounts of heat as well as electromagnetic (EM) waves generated have increased. Materials with high thermal conductivity and excellent EM interference shielding effectiveness (EMI SE) can be utilized to address this issue. In this work, we synthesized hollow anatase TiO2 microspheres. Through a reaction, MgO nanoparticles were incorporated into the interior of TiO2 microspheres. (H-TiO2/MgO). The heterostructure of the fillers contributed to performance enhancement. TiO2 and MgO particles formed a dual thermal-conduction pathway. H-TiO2/MgO effectively weakened the energy of EM waves upon contact. Additionally, TiO2, MgO, and epoxy all exhibited hydrophilicity. Consequently, the interfacial compatibility between H-TiO2/MgO and epoxy was excellent. They formed strong interfacial interactions by hydrogen bonding. Because of the excellent electrical insulation properties of H-TiO2 and MgO, the composites exhibited superior insulation performance (over 1010 Ω·cm). Our H-TiO2/MgO/Epoxy composites exhibited a maximum thermal conductivity of 7.52 W/m·K, an EMI SE of 64.92 dB, and a tensile strength of 79.10 MPa. Our composites are expected to effectively manage heat and EM waves generated by electronic devices

Solvent-free Acrylate/BCB drop-on-demand (DOD) inkjet dielectric ink for 3D printing

Currently, drop-on-demand (DOD) inkjet-printed dielectric inks used to produce next-generation high-frequency electronic devices fail to meet the requirements of circuit board substrates in terms of thermal, mechanical, and dielectric properties. To address this gap, we synthesized a low-viscosity acrylate monomer featuring an intrinsically low dielectric structure (hexafluorobisphenol A) and multiple cross-linking sites, and a benzocyclobutene monomer with low curing shrinkage and excellent thermomechanical properties. By mixing these monomers with other reactive diluents and verifying them through theoretical calculations and printing, we have developed a range of dielectric inks suitable for inkjet 3D printing. To enhance the overall performance of the cured inks, a sequential UV/thermal curing strategy was employed to form interpenetrating networks (IPNs). The optimal ink formulations met the requirements of circuit board substrates, demonstrating excellent heat resistance (Td5% = 334 °C, Tg = 181 °C), mechanical properties (tensile strength = 85 MPa, elongation at break = 13.5 %), and dielectric properties (Dk = 2.526 and Df = 0.113 at 15 GHz). These formulations meet the performance requirements for circuit board substrates and lead the industry in mechanical and dielectric properties. Furthermore, the feasibility of inkjet printing heterogeneous integrated electronic devices was verified, showing excellent print resolution and continuity of the conductive network. This work provides new insights into the future development of dielectric materials for inkjet 3D printing.

Achieving high efficiency and bandwidth enhancement of DRA arrays: Synergic effects of LiMg4AlO6 microwave dielectric ceramic and 2D metamaterials

In this paper, LiMg4AlO6 ceramics with a sintering temperature of 1380 °C to 1460 °C are prepared, and the microwave dielectric properties of the ceramics and their potential application in dielectric resonator antenna (DRA) arrays are investigated. Analysis techniques such as XRD and Rietveld refinement reveal that the LiMg4AlO6 ceramics are rock salt structures and the space group is Fm-3 m (225). The ceramic obtained excellent microwave dielectric properties (εr = 10.17, Q×f = 172, 558 GHz, and τf = - 32.5 ppm/ °C) at 1440 °C. The εr of LiMg4AlO6 ceramics exhibits minimal variation across a wide temperature range (-100 °C to 400 °C) without phase transition. Furthermore, the 2D metamaterials (metasurfaces) are introduced in the DRA, which can significantly improve the radiation efficiency and bandwidth of the antenna. Measured results demonstrate that the antenna has a wide bandwidth ranging from 8.07 GHz to 8.57 GHz, with a maximum realized gain of 8.9 dBi and a peak radiation efficiency of 97%. The proposed ceramic antenna array combines the superior properties of 2D metamaterials and ceramic materials, which opens up a new avenue for ceramic antenna design and satellite communication applications.

A "Bottom-Up" Strategy for High-Performance Benzocyclobutene (BCB)-Subnanometer Inorganic Nanocomposites.

Developing benzocyclobutene (BCB) nanocomposites with ultra-small inorganic sizes represents a formidable challenge, although it offers great potential to produce materials with customizable structural and rich functional properties. In this study, we present a "bottom-up" design strategy for creating cross-linked benzocyclobutene (BCB) nanocomposites with highly dispersed nanodomains, such as organoalkoxysilane. This approach leverages ring-opening metathesis polymerization (ROMP) and thermally induced cycloaddition reactions to embed oligomeric silsesquioxanes, achieving a unique molecular structure with promising low-dielectric applications. The synthesis involves organoalkoxysilane and BCB as pendant groups of polynorbornenes that are covalently integrated. Additionally, the methoxyl groups of linear polymers could be further hydrolyzed under acidic conditions, and BCB groups could undergo thermal-induced ring-opening at high temperatures and Diels-Alder addition between themselves and vinyl groups, respectively. Fourier transform infrared (FTIR) spectroscopy analyses suggested the presence of ladder or network structures and high-resolution transmission electron microscopy (HRTEM) images presented the well-dispersed inorganic clusters, facilitating excellent dielectric properties with a dielectric constant (Dk) of 2.25 and a dissipation factor (Df) of 2.27 × 10-4. Compared with previously reported low-Dk materials, the cured nanocomposites also exhibited a significantly balanced enhancement of their comprehensive properties. This molecular bottom-up strategy provided a simple and universal method for constructing BCB-inorganic nanocomposites featuring a subnanometer inorganic structure, paving the way for future investigation into new classes of polymer-inorganic nanocomposites with a low Dk.