Dielectric behavior and defects of nitrogen-containing single crystal diamond films

Abstract

Single crystal diamond (SCD) film, as a new substrate material, has attracted growing attention because of its low dielectric loss. The nitrogen was usually introduced into microwave plasma chemical vapor deposition (MPCVD) process in order to enhance the growth rate of SCD films. So SCD films with nitrogen were prepared by MPCVD compared with the undoped film. The impurities and defects of diamond films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy (PL). The dielectric behavior of SCD films was measured using the LCR measurement in the frequency range of 1 kHz to 110 MHz. The results indicate that the primary dielectric loss in SCD films is conductivity loss and space charge polarization below 1 MHz, while the main dielectric loss is dipole orientation polarization and electronic relaxation polarization in the frequency range of 1 MHz to 110 MHz. Point defects like substitutional N+, NV− and SiV− exert a significant influence on polarization loss. This is essential to improve the growth of SCD with excellent dielectric properties.