A hybrid 1T-1C HfZrOx(HZO)-DRAM/FRAM (D-FRAM) enabling non-volatile memory (NVM) and DRAM modes at 130 nm node are experimentally demonstrated. Excellent data retention characteristics at the D-FRAM array were achieved in the NVM mode. Low operation voltage (2 V) and further improved endurance (> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{14}}$ </tex-math></inline-formula> ) in the DRAM mode were also realized by avoiding polarization switching. Moreover, the hybrid D-FRAM implemented in this work had a unified hardware structure, which helped to realize dual NVM and DRAM advantages, thereby supporting the low latency and low power data movement between them in the hybrid arrays.