Abstract
Metal-ferroelectric-insulator-Si (MFIS) diodes using poly(methyl methacrylate) (PMMA)-blended poly(vinylidene fluoride)-trifluoroethylene [P(VDF-TrFE)] as a gate ferroelectric film were fabricated and their electrical characteristics were investigated. A wide memory window of 1.2 V was observed in a Au/3 wt % PMMA-blended P(VDF-TrFE) (46 nm)/HfTaO(6 nm)/Si MFIS diode for the voltage sweep between −3 and +3 V. Excellent data retention characteristics were also observed in these MFIS diodes. After a small programing voltage of 3 V is applied, the high and low capacitances remained very stable for the retention period over 4 h.
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