Year-end Sale % OFF 
Abstract
Metal-ferroelectric-insulator-Si (MFIS) diodes using poly(methyl methacrylate) (PMMA)-blended poly(vinylidene fluoride)-trifluoroethylene [P(VDF-TrFE)] as a gate ferroelectric film were fabricated and their electrical characteristics were investigated. A wide memory window of 1.2 V was observed in a Au/3 wt % PMMA-blended P(VDF-TrFE) (46 nm)/HfTaO(6 nm)/Si MFIS diode for the voltage sweep between −3 and +3 V. Excellent data retention characteristics were also observed in these MFIS diodes. After a small programing voltage of 3 V is applied, the high and low capacitances remained very stable for the retention period over 4 h.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
