This study examined the ultimate fine-pitch patterning performance in EUV lithography (EUVL) of a chemically amplified (CA) positive-tone resist based on low-molecular-weight amorphous polyphenol. This advanced resist is composed of the low-molecular-weight protected polyphenol 4,4′-methylenebis[2-[di(2-mehtyl-4-hydroxy-5-alkyl)methyl]phenol (MBSA2), a photochemical acid generator (PAG), and a quencher. Imaging experiments were performed using the high-numerical-aperture (NA = 0.3), small-field EUV exposure tool (HINA) and coherent illumination ( σ = 0.0). Patterning results showed the resolution of the resist to be 30 nm at an EUV exposure dose of 10 mJ/cm 2, and the line-edge roughness (LER) to be small, with 3 σ being 6.3 nm for 50 nm line-and-space patterns and an inspection length, L, of 2000 nm.