The growth of titanium silicide was investigated in sub-monolayer Ti deposited on Si(111)-7×7. The formation of nanorod and cluster structures was observed for 600 and 700°C deposited samples. In samples heated to 800°C, titanium silicide structures transformed to clusters. C49-TiSi2 nanorods were found to orient along three equivalent Si<220> directions with C49-TiSi2(200)∥Si(220). Deposition of sub-monolayer Ti at a high temperature was found to contribute to the lowering of the formation temperature of C49-TiSi2. The lowering of C49-TiSi2 growth temperature on heated substrate is attributed to smaller lattice mismatch between C49-TiSi2(200) and Si(220).