The method of thermomigration of liquid zones based on aluminum makes it possible to create complex structures of closed channels with boundaries formed from p-n junctions in single-crystal silicon wafers. The channels are characterized by the uniformity of their properties, and the pn junctions are characterized by their sharpness. Such structures are used in high-current electronics, photovoltaics, and microelectromechanical converters. Volumetric deformation inside and outside the channel due to alloying of silicon with aluminum leads to the formation of mechanical stresses. The equilibrium shape of the channels formed at high temperatures is determined by the minimum elastic energy and depends on the material parameters and geometry of the structure. Within the framework of the linear theory of elasticity, the behavior of elastic energy during the formation of the structure of thermomigration channels at high temperatures doped with aluminum in a single-crystalline (001) cut disk was studied. The simulation was performed using the finite element method in the COMSOL Multiphysics mathematical package. The study was carried out for practically important structures in which the direction of the edges is oriented along the diagonal of the square. Only such structures do not have breaks during the process of thermomigration. Based on the calculation results, it was revealed that the minimum elastic energy corresponds to structures with different crystalline orientations inside the channel and outside it – in the main silicon matrix. The direction of the crystalline axes inside the channel, corresponding to the minimum elastic energy, is rotated by 45 degrees in the plane of the disk relative to the direction of the axes of the main matrix of the silicon crystal. In addition, calculations showed that with such a turn, the shape of the channels changes. The minimum elastic energy corresponds not to vertical structures, but to inclined ones. The angle of inclination of the pyramids depends on the width of the channels and the distance between them.
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