Epitaxy Method Research Articles

MOF-Derived Zn/N-Doped Porous Carbon Film on a Carbon Nanotube for High-Performance Supercapacitors.

Designing high-performance binder-free electrochemical electrodes is crucially important toward supercapacitors. In this paper, a Zn/N-doped porous carbon film coating on flexible carbon nanotubes (ZIF-8@CT-800) derived from the epitaxial Zn-MOF film growth on cotton textile was successfully fabricated via a combination of the liquid-phase epitaxial (LPE) method and calcination treatments. The ZIF-8@CT-800 serves directly as a self-supported electrode for supercapacitors and exhibits a high areal capacitance of 930 mF·cm-2 at a current density of 1 mA·cm-2 and a good recyclability of 86% after 2000 cycles. The excellent supercapacitor property is ascribed to the unique structural design of ZIF-8@CT-800, which provides appropriate channels for enhanced electronic and ionic transport as well as increased surface area for accessing more electrolyte ions. This work will provide significant guidance for designing MOF-derived porous carbon to construct flexible binder-free electrode materials with high electrochemical performance.

Molecular beam epitaxy of Pd-Fe graded alloy films for standing spin waves control

This study demonstrates capabilities of a molecular beam epitaxy method for the deposition of ferromagnetic Pd–Fe alloy thin films with variable compositions across film thickness. It is proposed as a technological route to synthesize graded magnetic materials possessing unusual physical properties. A particular approach to realize a concentration profile through temperature control of an effusion cell during deposition is described in detail. Using this technique, graded ferromagnetic films were synthesized and characterized to reveal the possibility of controlling the spectrum of standing spin waves in them. Limitations of creating Pd–Fe films magnetically profiled across the thickness are discussed, associated with the thermal inertia of effusion cells and possible phase separation.

Unlocking the potential of a chemically modified blue phosphorene as anode materials for high-performance sodium-ion batteries

Blue phosphorene (Blu-Pn) has recently been identified as a new two-dimensional (2D) form of black phosphorus via the epitaxial growth method and has shown the ability to host a substantial amount of Na while serving as an anode in sodium-ion batteries (NIBs). However, its structural instability is an issue that hinders its further exploitability in NIBs. In this paper, we propose to chemically modify the Blu-Pn network by substituting six phosphorus atoms with a carbon source in the form of a C6 ring, constructing a new and robust CP2 nanosheet. Based on the state-of-the-art non-local van der Waals corrected density functional theory and ab initio molecular dynamic (AIMD) simulations, we systematically explore the feasibility of the designed CP2 as a potential anode material for NIBs. Adding a C6 ring in the Blu-Pn lattice reduces its energy gap from 2 eV to 1.3 eV, which disappears after Na adsorption, indicating a conductive character. Attributed to the synergistic effect, the adsorption energy of Na on CP2 nanosheet (−2.22 eV) is greatly decreased in comparison to the pristine carbon source (e.g., graphene with −0.78 eV) and pristine Blu-Pn (−1.85 eV). The Na diffusivity on CP2 at 300 K is predicted to be 4.90 × 10−11 m2/s by AIMD. The specific capacity is up to 604.1 mAh/g, which exceeds that of the commercialized graphite anode (372 mA h/g). Ultimately, the designed electrode provides a small open circuit potential of 0.66 V that falls within a desirable voltage range. This work paves the way for exploring Blu-Pn 2D anode materials for NIBs technology and provides valuable insights into surface chemical modification towards the long-term stability of Blu-Pn.

PA2PbBr4/MAPbBr3 Heterojunction X‐Ray Detector with Enhanced Sensitivity and Excellent Self‐Powered Functionality

AbstractHeterojunctions combining 2D and 3D perovskites have caused a surge in the research on X‐ray detectors. The enhanced charge transport facilitated by the built‐in electric field further amplifies the potential of this material system, paving the way for highly sensitive and efficient X‐ray detectors. In this study, PA2PbBr4 single‐crystal film with a thickness of 10 µm is successfully grown on the surface of MAPbBr3 substrate via liquid phase epitaxial method, forming a 2D/3D heterojunction. This innovative detector exhibits a dramatically enhanced sensitivity of 3.81 × 104 µC Gy−1 cm−2 at an X‐ray tube voltage of 70 keV and a bias of 50 V mm−1, along with an ultra‐low detection limit of 11.84 nGy s−1, surpassing the performance of the conventional MAPbBr3 X‐ray detectors by a factor of four and 2 × 103 times higher than that of commercialized α‐Se detectors. Furthermore, the 2D/3D heterojunction exhibits exceptional self‐powered X‐ray detection capabilities, achieving a remarkable sensitivity of 3562.26 µC Gy−1 cm−2 at 70 keV X‐ray tube voltage. This superior performance implies reduced energy consumption, high portability, decreased ion migration, and provides inspiration for the next generation of high‐performance X‐ray detectors.

Controllable chemical synthesis of core-shell NaGdF4:Yb3+/Er3+@Bi4O5I2/Bi5O7I Z-scheme heterojunction for efficient tetracycline hydrochloride photodegradation

Constructing heterojunction photocatalysts that can make additional utilization of near-infrared (NIR) light has been a global scientific problem and has gained widespread research interest. Upconversion nanoparticles (UCNPs) collaborate with semiconductors to construct UCNPs-based photocatalysts that are used to improve solar energy utilization. In this work, the as-prepared UCNPs-based photocatalysts consisting of NaGdF4:Yb3+/Er3+ (NGFYE) and bismuth oxyiodide (BOI) are synthesized by chemical epitaxial growth method and in-situ calcination process. The crystalline phase, morphology, optical and electrochemical properties of NGFYE@BOI samples are investigated in detail. Besides, Bi4O5I2/Bi5O7I Z-type heterojunction is confirmed by EPR test. Moreover, the photocatalytic elimination of tetracycline hydrochloride (TCH) and its photocatalytic mechanism by NGFYE@BOI samples are explored. This work may provide a promising idea for the efficient and controlled synthesis of UCNPs-based photocatalysts, which will contribute to the future utilization of solar energy.

Piezotronically tuned photosensitivity in ZnO varistor-type interface devices

The study of piezotronic and piezo-phototronic features in semiconducting piezoelectrics has gained considerable attention for optimizing electronic and optoelectronic device performance. In this study, we explore the photocurrent response within a ZnO varistor-type interface device and examine its UV photosensitivity enhancement through piezo-phototronic modulation of the potential barriers at grain boundaries. Doped ZnO bicrystals were synthesized using the epitaxial solid-state transformation method with polarization vectors perpendicular to the interface. The vectors can be directed both into and out of the interfaces depending on the crystallographic orientation of the crystals designated as (0001̅)|(0001̅) and (0001)|(0001) interfaces, respectively. These varistor-type boundaries demonstrate an exceptional photoelectric response to UV photons. Furthermore, our results indicate that the photoresponsivity of bicrystals with (0001)|0001 crystallographic orientation can be further enhanced under piezo-phototronic influence. Application of compressive stress of 100 MPa not only increased photocurrent formation by 1000 % but also boosted photosensitivity by 1400 %, attributed to the elevated double Schottky barrier (DSB) height at the interface resulting from mechanical loading on the bicrystal. Our findings highlight the significant role of piezoelectrically tuned potential barriers at grain boundaries in enhancing the separation and extraction of photogenerated excitons for photocurrent formation. This study introduces the engineered varistor-type interface as a promising candidate for future optoelectronic devices and contributes to our understanding of the piezo-phototronic concept in semiconductor-semiconductor interface devices.

Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range

Four types of barrier detectors based on a type II InAs/InAsSb superlattice with a wide-gap barrier made of a solid AlInAsSb lattice matched to the GaSb buffer were compared. The tested detectors differed in the type of doping of the active layer and the level and type of doping of the contact layer at the barrier. The epitaxial layers were deposited on GaAs (100) substrates using the molecular beam epitaxy method. The spectral and current–voltage characteristics of the analyzed detectors were compared. The highest current responsivities were observed in the structure with a p-type absorber (p+BpN+). Detectors with an n-type absorber (p+Bnn+, n+Bnn+, and nBnn+) show an increase in the current responsivity with an increase in the reverse bias voltage due to the reduction in the undesirable barrier in the valence band. Arrhenius characteristics for the dark current show that only in nBnn+ detectors, it was possible to limit the generation–recombination current. These detectors at 150 K were characterized by the highest normalized detectivity of approximately 3 × 1011 cm · Hz1/2/W. The obtained results were compared with literature data, showing that the parameters of type II superlattice photodetectors are close to those of HgCdTe photodiodes according to the “Rule 07” and “Rule 22” principles.

MBE growth of Ge1−x Sn x devices with intrinsic disorder

We discuss the electrical properties of molecular beam epitaxy (MBE) grown, modulation doped, Ge1−x Sn x quantum well devices. A consequence of the epitaxial growth process is that electronic disorder is introduced even in modulation doped quantum well structures and electrical transport properties that are characteristic of a high level of disorder are apparent. MBE growth of this material also results in the surface segregation of elemental β-Sn in the way that has been observed utilizing other epitaxial growth methods. A thermally activated, p-type mobility is a clear feature of the electrical properties with generally temperature independent hole densities ∼1012 cm−2 from the measured Hall effect and coming from the modulation doping. We present a discussion of Hall effect measurements in this disordered regime. The percolation carrier density in MBE modulation doped GeSn is in the region of ∼1 × 1012 cm−2 although Hall measurements in this regime are difficult to quantify when the resistivity >(h/e 2). In this notation h is Planck’s constant and e is the unit of charge. Conductivities (σ) as low as ∼0.028 × (e 2/h) × square can be measured in the four-contact ac configuration and the temperature dependence indicates a mobility edge in these p-type devices below ∼2 × 1012 cm−2. At lower temperatures (<∼1 K) the presence of a Coulomb gap can be determined using dc transport, constant voltage measurements where small ac current excitation is not available experimentally. This two-contact configuration can determine σ down to ∼10−6 × (e 2/h), deep into the localization regime, revealing a hopping conductivity dominated system. We discuss the relevance of these electrical properties for MBE grown GeSn devices.

Study on the Faraday rotation angle of La-substituted barium hexaferrite in the terahertz band.

M-type barium hexaferrites (Ba1-xLaxFe12O19) were prepared by the liquid phase epitaxial (LPE) method, in which Ba2+ was substituted by La3+. The Faraday rotation effect of materials in the frequency range of 0.5-0.8 terahertz (THz) is studied by THz time-domain spectroscopy (THz-TDS). It was demonstrated that the M-type barium hexaferrites have a large Faraday rotation angle, and the Faraday rotation angle can be further enhanced by the substitution of La3+. For 500 µm thick film samples, the Faraday rotation angle exceeded 20° under the maximum measuring magnetic field of 400 mT. Moreover, the Faraday rotation angle is not saturated, and it will further increase with the increase of the magnetic field. At 0.8 THz, the Faraday rotation angle of the sample with x = 0 is 21.48°, for x = 0.05 which is 21.62°, and for x = 0.19 which is 28.38°. The Faraday rotation angle is enhanced by about 32%. By measuring the magnetic properties of the material, we found that the fundamental cause of the enhancement in the Faraday rotation angle lies in the increased saturation magnetization of the material after La3+ substitution. In the experiment, it was also found that the transmittance of the material to the THz wave decreased sharply with the increase of La substitution. For sample x = 0, the transmittance is as high as 60%. When the substitution amount of La is only x = 0.05, the transmittance decreases to about 55%. When the maximum substitution amount of La is x = 0.24, the transmittance of the material is only about 2%.

Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy

The metal‐organic vapor phase epitaxy (MOVPE) method faces several challenges when used for the growth of N‐polar GaN on foreign substrates, including the presence of a rough surface morphology characterized by step bunching or hexagonal hillocks. In this study, it is aimed to address these issues by establishing optimal growth conditions for the MOVPE method, enabling the growth of N‐polar GaN/Al0.9Ga0.1N/AlN heterostructures with a smooth surface morphology on a vicinal sapphire substrate. The formation of 2D electron gas (2DEG) in N‐polar GaN/AlGaN/AlN prepared using MOVPE is discussed. Additionally, in the study, the impact of growth conditions, such as temperature and V/III ratio, on the electrical properties of N‐polar GaN is investigated. In the results, it is revealed that growth at lower temperatures and a V/III ratio of 30 000 effectively suppresses 3D growth. Moreover, an increase in the V/III ratio correlates with a decrease in residual impurity concentrations (C and H); hence, electron mobility improves. Moreover, the N‐polar GaN/AlGaN/AlN field‐effect transistor, grown under optimized conditions, exhibits a higher maximum drain–source current (IDmax). In these results, possibilities are broadened for the high performance of N‐polar GaN channel high‐electron‐mobility transistors through MOVPE.

Enhanced Enzymatic Performance of Immobilized Pseudomonas fluorescens Lipase on ZIF-8@ZIF-67 and Its Application to the Synthesis of Neryl Acetate with Transesterification Reaction.

In this study, hybrid skeleton material ZIF-8@ZIF-67 was synthesized by the epitaxial growth method and then was utilized as a carrier for encapsulating Pseudomonas fluorescens lipase (PFL) through the co-precipitation method, resulting in the preparation of immobilized lipase (PFL@ZIF-8@ZIF-67). Subsequently, it was further treated with glutaraldehyde to improve protein immobilization yield. Under optimal immobilization conditions, the specific hydrolytic activity of PFL@ZIF-8@ZIF-67 was 20.4 times higher than that of the free PFL. The prepared biocatalyst was characterized and analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier transform infrared (FT-IR). Additionally, the thermal stability of PFL@ZIF-8@ZIF-67 at 50 °C was significantly improved compared to the free PFL. After 7 weeks at room temperature, PFL@ZIF-8@ZIF-67 retained 78% of the transesterification activity, while the free enzyme was only 29%. Finally, PFL@ZIF-8@ZIF-67 was applied to the neryl acetate preparation in a solvent-free system, and the yield of neryl acetate reached 99% after 3 h of reaction. After 10 repetitions, the yields of neryl acetate catalyzed by PFL@ZIF-8@ZIF-67 and the free PFL were 80% and 43%, respectively.

Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe2 via Tellurization.

Platinum ditelluride (1T-PtTe2) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe2 using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods. We demonstrate that achieving highly crystalline 1T-PtTe2 using tellurization is not dependent on epitaxy but rather relies on two critical factors: (i) the crystallinity of the predeposited platinum (Pt) film and (ii) the surface coverage ratio of the Pt film considering lateral lattice expansion during transformation. By optimizing the surface coverage ratio of the epitaxial Pt film, we successfully obtained 2 in. wafer-scale uniformity without in-plane misalignment between antiparallelly oriented domains. The electronic band structure of 2D topological PtTe2 is clearly resolved in momentum space, and we observed an interesting 6-fold gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical conductivity down to ∼3.8 nm, which is consistent with that of single crystal PtTe2, was observed, proving its ultralow defect density.

A broad-band investigation of ferromagnetic resonance in exchange coupled permalloy/phthalocyanine bilayer heterostructures at room temperature

The phenomenon of ferromagnet/molecule interfacial electronic hybridization enables the possibility of modifying magnetic characteristics of downscaled systems for spintronic applications. Ferromagnetic resonance (FMR) at the nanoscale level through a coplanar waveguide (CPW) over a wide frequency range is a remarkably reliable technique for investigation of the magnetic heterostructure’s interfacial properties and their feasibility in applications as spintronic devices. Here, magnetron sputtering and organic molecular beam epitaxy methods are used to fabricate the following nanoscale heterostructures: permalloy (Py)/Fe phthalocyanine (Pc), Py/ZnPc, and Py/Cr. Magnetization dynamics of the bilayer heterostructures is investigated in a CPW by studying frequency dependence (5–50 GHz) of the resonance field and linewidth with parallel and perpendicular geometries of the static applied magnetic field, thereby providing insights into possible intrinsic and extrinsic sources of FMR damping. Planar Pc molecules at the Py layer interface are found to have the potential to contribute to magnetic stabilization based on calculated magnetic parameters. This is evidenced by the larger results of surface anisotropy of the Py/MPc bilayer heterostructures induced by exchange coupling interaction at room temperature as well as the lower values of damping constant.

Advancements and future prospects of Gallium Nitride (GaN) in semiconductor technology

Gallium Nitride (GaN) is a semiconductor material distinguished by its exceptional attributes and potential for diverse applications. Characterized by high electron mobility, substantial saturation drift velocity, an extensive forbidden energy band, and remarkable thermal stability, GaN demonstrates versatility in various electronic applications. These include high-frequency power amplifiers, luminous high-brightness Light Emitting Diodes (LEDs), and lasers. Advancements in synthesis techniques, such as gas-phase epitaxy, hydrothermal, and solution methods, have facilitated the production of high-quality GaN thin films. The research on GaNs physical properties encompasses an in-depth analysis of its structure, crystallographic defects, and optical characteristics, alongside investigations into the performance of optoelectronic devices. Future research trajectories are oriented towards developing scalable synthesis methodologies, designing and optimizing energy-efficient devices, and enhancing sustainable and eco-friendly attributes. Nonetheless, challenges persist in the realms of cost efficiency and reliability of GaN materials, necessitating further refinement in design and processing techniques and broadening the spectrum of potential applications. With no doubt, GaN materials exhibit significant potential for future development and are poised to assume a crucial role in the advancement of science and technology.

Large-area ultrathin 2D Co(OH)2 nanosheets: a bifunctional electrode material for supercapacitor and water oxidation

Ultrathin film of active materials having thickness <5 nm emerged as a promising candidate for miniaturized energy storage and conversion devices. However, the small lateral size restricts its real device applications. Herein, we report large area, 2D, ultrathin (thickness: 4.3 ± 0.3 nm) Co(OH)2 nanosheets as bifunctional electrode material for supercapacitor and oxygen evolution reaction developed by ionic layer epitaxy method at the water-air interface. The symmetric supercapacitor device exhibited excellent volumetric capacitance of 2313 F/cm3 at 0.4 mA/cm2 current density. Additionally, it exhibited a remarkable volumetric energy density of 0.205 Wh/cm3 at a power density of 0.145 W/cm3, which is better than reported 2D electrode materials. Furthermore, the cobalt hydroxide (Co(OH)2) ultrathin-film electrodes showed improved oxygen evolution reaction electrocatalytic activity with low overpotential (ƞ10, 330 mV) and Tafel slope (47 mV/dec). The structural and morphological investigations after long-term operations show substantial stability of the electrode material. The theoretical investigations of electronic structures, quantum capacitance, and free energy profiles for the oxygen evolution reaction mechanism corroborate the experimental results.

Strong Covalent Coupling in Vertically Layered SnSe2/PTAA Heterojunctions Enabled High Performance Inorganic-Organic Hybrid Photodetectors.

Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p-n Heterojunction Photodetectors.

Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p-n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.

Temperature dependence of photoluminescence kinetics and scintillation properties of LuY2(Al5-xScx)O12:Ce (x = 1, 1.5, 2) garnet single-crystalline films

The temperature dependence of photoluminescence (PL) kinetics and scintillation properties were investigated in LuY2(Al5-xScx)O12:Ce (x = 1, 1.5, 2) garnet single-crystalline films grown by the isothermal liquid phase epitaxy method. With the increase of Sc content, the Ce3+ 5d1 level was shifted to higher energy while the Ce3+ 5d2 level was shifted to lower energy due to the decrease in crystal field splitting of the 5d levels. Activation energy of thermal quenching, determined from temperature-dependent PL decay times, decreased with increasing Sc content. At room temperature, the decrease of light yield (LY) value with increasing Sc content is caused by the thermal ionization process. LuY2(Al4Sc)O12:Ce showed a LY value of 510 photons/MeV when excited by 5.5 MeV α-particles, which is ∼21 % larger than that of Lu2Y(Al4Sc)O12:Ce due to a smaller bandgap Eg of the former.

Liquid-Metal-Based Spin-Coating Exfoliation for Atomically Thin Metal Oxide Synthesis.

Two-dimensional (2D) semiconductors possess exceptional electronic, optical, and magnetic properties, making them highly desirable for widespread applications. However, conventional mechanical exfoliation and epitaxial growth methods are insufficient in meeting the demand for atomically thin films covering large areas while maintaining high quality. Herein, leveraging liquid metal oxidation reaction, we propose a motorized spin-coating exfoliation strategy to efficiently produce large-area 2D metal oxide (2DMO) semiconductors with high crystallinity, atomically thin thickness, and flat surfaces on diverse substrates. Moreover, we realized a 2D gallium oxide-based deep ultraviolet solar-blind photodetector featuring a metal-semiconductor-metal structure, showcasing high responsivity (8.24 A W-1) at 254 nm and excellent sensitivity (4.3 × 1012 cm Hz1/2 W-1). This novel liquid-metal-based spin-coating exfoliation strategy offers great potential for synthesizing atomically thin 2D semiconductors, opening new avenues for future functional electronic and optical applications.

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb1−x Bi x ) material. Utilizing the molecular beam epitaxy method, we achieved high Bi composition uniformity. This method also enables the InSb1−x Bi x to be grown on semi-insulating GaAs substrate, effectively preventing parallel electrical conduction during Hall effect measurement. Our findings reveal that InSb1−x Bi x doped with silicon (Si) and tellurium (Te) consistently exhibit n-type conductivity. In contrast, InSb1−x Bi x doped with beryllium (Be) exhibit a transition from n to p type conductivity, subjected to the Be doping level and the measurement temperature. Based on these observations, we proposed an empirical model describing the dependence of InSb1−x Bi x electron mobility on carrier concentration, temperature, and Bi composition, specifically for Si and Te-doped InSb1−x Bi x samples. These insights gained from this study hold potential application in photodetector device simulations.