Silicon Carbide Epitaxial Growth Research Articles

High temperature chemical vapor deposition of SiC

A growth process has been investigated for the epitaxial growth of silicon carbide. The technique can simply be described as chemical vapor deposition (CVD) at high temperatures, hence the name high temperature CVD (HTCVD). The growth process however, differs greatly from that of the CVD process due to the significant sublimation and etch rates at the extreme growth temperatures (1800–2300°C). The grown rates obtained with the HTCVD are in the order of several tens of μm/h to 0.5 mm/h. The purity and crystallinity of the growth layers are outstanding showing strong free exciton related photoluminescence.

Coating with silicon carbide in high-frequency discharge

The authors investigate the kinetics of pyrolysis of methyl trichlorosilane and the subsequent chemical vapor deposition and epitaxial growth of silicon carbide on tungsten under the influence of a high-frequency glow discharge. They also assess the diffusional behavior of silicon and carbon in tungsten as a function of temperature and activation energy.

Solution grown SiC p-n junctions

Epitaxial growth of silicon carbide on α-SiC substrates has been carried out at 1650°C in carbon-saturated silicon solutions. The quality of growth is found to be strongly dependent on the inclination of the substrate in the melt, an angle of 40° to the horizontal resulting in the growth of uniform layers of the same polytype as the substrate. With this technique p-n junctions have been prepared using nitrogen, aluminium and boron impurities, and their diode and electroluminescent properties examined.

Epitaxial Growth of Silicon Carbide by the Thermal Reduction Technique

The epitaxial growth of silicon carbide on the basal plane of hexagonal silicon carbide substrates has been accomplished by the thermal reduction of carbon and silicon tetrachlorides, and experimental parameters of the growth process have been studied. Using good in situ etching techniques and inert susceptor materials, epitaxial silicon carbide layers with structural perfection similar to that of the substrate were grown at a substrate temperature of 1700°C and a deposition rate of 0.5 µ/min. Doped silicon carbide layers were prepared using nitrogen, arsine, or phosphine as n‐type dopants and diborane as a p‐type dopant, and the electrical properties of these layers were evaluated by Hall measurements in the temperature range 78°–900°K. Preliminary junction structures prepared by doping techniques were found to be capable of supporting up to 50v at 500 °C.