Achieving nitrogen fixation in visible light-driven using metal-free and eco-friendly semiconductors at acceptable temperature and pressure still remains a big challenge. In the field of artificial photosynthesis, reported semiconductors for nitrogen fixation have large band gap around 3.0 eV and requires high temperature and pressure which results the catalytic nitrogen fixation is navigate under visible light, consume supply of global energy, and emit global greenhouse gas. In conflict this report illustrates a metal free catalyst EBCNDG with a band gap of ∼2.64 eV at room temperature and pressure indicate photocatalytic campaign toward nitrogen fixation in visible light without producing any harmful gases. The EBCNDG photocatalyst has a vacancy of high active oxygen which helps adsorb and stabilize the intermediate and increases the rate of nitrogen fixation. The EBCNDG photocatalyst was prepared by coupling of an eosin B (EB) with N-doped graphene (NDG) via amide linkage. This unique combination opens a new trial for nitrogen fixation as well as NADH regeneration under acceptable conditions using visible energy. The amount of ammonia obtained by EBCNDG is 0.513 mM and the regeneration yield of NADH is 90.3%.
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