Enhanced Carrier Mobility Research Articles

Interface Effect of Ru‐MoS2 Nanoflowers on Lignin Substrate for Enhanced Hydrogen Evolution Activity

The catalytic performance of Molybdenum disulfide (MoS2) has been still far from that of Pt‐based catalysts for inadequate active sites and sluggish electron transfer kinetics. Through engineering the interface between MoS2‐based materials and supported substrates, hybrid Ru‐doped MoS2 on carbonized lignin (CL) is designed and prepared as efficient catalyst for hydrogen evolution reaction (HER). The CL substrate not only facilitates the growth of MoS2 nanoflowers, but also promotes the electron transfer. Ru doping increases active sites greatly for HER. The hybrid catalyst achieves a low onset overpotential of 25 mV and a low Tafel slope of 46 mV dec−1. The favorable HER activity ascribes to the interfacial interaction between MoS2 and CL. Density functional theory calculations further confirm the improved HER performance with doped Ru atoms. This study presents a prototype application to design electrocatalysts with enhanced carrier mobility and high‐density active sites based on interface effect.

Non-halogenated additive engineering for morphology optimization in environmental-friendly solvent processed non-fullerene organic solar cells

Abstract In this work, efficient non-fullerene organic solar cells are demonstrated based on the environmentally-friendly solvent system. The blend films morphology from the non-halogenated solvent exhibits more suitable phase separation as the non-halogenated additive is employed. In addition, the additive engineering induces the preferentially oriented self-assembly for the molecules, which contributes to better exciton dissociation, enhanced carrier mobility, and balanced charge transport. All these benefits for the additive engineering achieve the power conversion efficiency of the environmentally-friendly solvent system processed non-fullerene organic solar cells up to 4.52% efficiency, which promises the non-halogenated solvent system for eco-friendly and sustainable organic solar cell technology.

In Situ Cleaning and Fluorination of Black Phosphorus for Enhanced Performance of Transistors with High Stability.

Most two-dimensional (2D) semiconductors suffer from intrinsic instability under ambient conditions, especially 2D black phosphorus (BP). Although much effort has been made to study the passivation of 2D materials against corrosion by oxygen and water molecules, facile and effective passivation with long-term stability is still challenging; in particular, selective passivation, which is critical for integration into nanoelectronics, is still lacking. Here, we develop a novel passivation route for BP using a fluorinated self-assembled thin film of PFSA (perfluorosulfonic acid, PFSA), where the surface modifier with high hydrophobicity on BP presents extremely stable characteristics over five months under ambient conditions. Moreover, we report for the first time in situ cleaning and selective fluorination of only BP flakes on a SiO2/Si substrate by a spin-coating process followed by ultrasonication, which was attributed to the formation of P-F covalent bonds on the BP surface. Selectively fluorinated BP shows not only enhanced stability in air but also electrical properties of the BP field-effect transistor (FET), with the on-current of the BP FET increasing and presenting enhanced carrier mobility (125 cm2 V-1 s-1) and on/off ratio (104). This significant finding sheds light on fabricating vertical 2D heterostructures to realize high performance and reliability with versatile 2D materials. This work demonstrates an emerging passivation approach for long-term stability together with superior electrical properties, which paves the way for integrating 2D semiconductors into critical channel materials in FETs that are favorable for next-generation digital logic circuits.

Design of a novel carbon nanotube and metal-organic framework interpenetrated structure with enhanced microwave absorption properties

The exploitation of carbon nanotube (CNT) and metal-organic framework (MOF) composite materials has been highly desirable in a number of applications. However, the construction of high dispersibility and stability CNT/MOF complex structures is still an enormous challenge. Herein, a novel assembly method is established for the construction of a CNT/Ni-MOF (0.1 CNT/MOF, 0.2 CNT/MOF, 0.3 CNT/MOF) interpenetrated structure by a solvothermal process. The MOFs can be robustly anchored on the surface of CNTs. Through a series of characterizations, the MOF can be comfortably integrated into the CNT fibers, which exhibits the enhancement of carrier mobility and fluorescence properties. The microwave absorption properties of the CNT/MOF are explored by a vector network analyzer. The 0.1 CNT/MOF has a maximum absorption of −9.2 dB at 18 GHz with a thickness of 5 mm, while the 0.2 CNT/MOF has a maximum absorption of −24.32 dB at 4.5 GHz with a thickness of 5 mm, a performance maximum. Therefore, the 0.2 CNT/MOF structures are potential candidates to ameliorate the microwave absorption properties.

Electronic properties of fluorine/hydrogen adsorbed two-dimensional tetrahex-carbon: A first-principles study

A recently proposed two-dimensional (2D) carbon allotrope, tetrahex-carbon, draws scientific attention due to its remarkable electronic and mechanical properties. This 2D carbon structure consists of tetragonal and hexagonal rings, and exhibits excellent semiconductor properties including a finite direct band gap and high carrier mobility, suggesting potential applications in semiconductor devices. In this paper, the electronic properties of fluorine/hydrogen adsorbed tetrahex-C was investigated via first-principles density-functional theory calculations. It demonstrates that its band structure can be significantly tuned and could be metallic with dangling bonds from F/H adsorption. With increasing F/H adsorption density, it shows semiconducting behavior and the band gap is widening, mainly due to the sp2-bonded carbon being gradually converted to sp3 hybridization. It was also found that effective masses of charge carriers along the zigzag-direction can largely reduce through adsorption of F/H, leading to potentially enhanced carrier mobility. Tetrahex-C shows prominent anisotropicity and the tunability of effective masses through F/H adsorption is remarkably dependent on the crystal orientation. In addition, it was found that, the work function of the F-adsorbed tetrahex-C increases while electron affinity decreases, compared to the pristine one. However, the H-covered carbon film shows significant reductions of both work function and electron affinity.

Efficient Hybrid Mixed‐Ion Perovskite Photovoltaics: In Situ Diagnostics of the Roles of Cesium and Potassium Alkali Cation Addition

Perovskite photovoltaics have made extraordinary progress in power conversion efficiency (PCE) and stability due to process and formulation development. Perovskite cell performance benefits from the addition of alkali metal cations, such as cesium (Cs+) and potassium (K+) in mixed‐ion systems, but the underlying reasons are not fully understood. Herein, the solidification of perovskite layers is studied, incorporating 5%, 10%, to 20% of Cs+ and K+ using in situ grazing incidence wide‐angle X‐ray scattering. It is found that K+‐doped solutions yield nonperovskite 4H phase rather than the 3C perovskite phase. For Cs+‐doped formulations, both 4H and 3C phases are present at 5% Cs+, whereas the 3C perovskite phase is formed in 10% Cs+‐doped formulations, with undesirable halide segregation occurring at 20% Cs+. Postdeposition thermal annealing converts the intermediate 4H phase to the desirable 3C perovskite phase. Importantly, perovskite layers containing 5% of Cs+ or K+ exhibit a reduced concentration of trap states and enhanced carrier mobility and lifetime. By carefully adjusting Cs+ or K+ concentration to 5%, perovskite cells are demonstrated with a ≈5% higher‐average PCE than cells utilizing higher cation concentrations. Herein, unique insights into the crystallization pathways toward perovskite phase engineering and improved cell performance are provided.

Anomalous 3D nanoscale photoconduction in hybrid perovskite semiconductors revealed by tomographic atomic force microscopy

While grain boundaries (GBs) in conventional inorganic semiconductors are frequently considered as detrimental for photogenerated carrier transport, their exact role remains obscure for the emerging hybrid perovskite semiconductors. A primary challenge for GB-property investigations is that experimentally they need to be performed at the top surface, which is not only insensitive to depth-dependent inhomogeneities but also could be susceptible to topographic artifacts. Accordingly, we have developed a unique approach based on tomographic atomic force microscopy, achieving a fully-3D, photogenerated carrier transport map at the nanoscale in hybrid perovskites. This reveals GBs serving as highly interconnected conducting channels for carrier transport. We have further discovered the coexistence of two GB types in hybrid perovskites, one exhibiting enhanced carrier mobilities, while the other is insipid. Our approach reveals otherwise inaccessible buried features and previously unresolved conduction pathways, crucial for optimizing hybrid perovskites for various optoelectronic applications including solar cells and photodetectors.

Modelling the photocatalytic behaviour of p-n nickel-titanium oxide nanocomposite

NiO-TiO2 (TN) nanocomposite is synthesized from an assembly of p-type nickel oxide (NiO) and n-type titanium oxide (TiO2) in an ultrasound assisted operation. Transmission electron microscopy (TEM) demonstrates the existence of hexagonal particles in the nanocomposite. Dynamic light scattering (DLS) measurements show stable TN nanoparticles (NPs) at a negative zeta potential (−18.5 ± 0.8 mV). The nanocomposite is tested for its catalytic activity towards degrading malachite green (MG), a known water toxicant and methylene blue (MB) under ultraviolet (UV) irradiation. Response surface methodology (RSM) is employed to optimise the influence of significant variables such as initial dye concentration, catalyst dose and time. Their mutual interactions are mapped by response surface and contour plots and correlated with degradation process by a designed model. The best photocatalytic efficiency (87%) is observed at an optimised concentration of 5 ppm dye with 10 ppm catalyst. The presence of inorganic ions and organic matter hardly affected the aggregate size of TN but caused a decline in photoactivity. The catalyst is found effective even in real water system (Hooghly River). A (Fluorine doped tin oxide) FTO/TN/Al heterojunction is fabricated. TN showed enhanced carrier mobility (1.03.10−4 m2V-1s-1) and low transit time (1.76.10-6 s) evaluated using space charge limited current (SCLC) theory. The nanocomposite appears suitable for energy preservation and environmental applications.

Sonochemical synthesis of nanospherical TiO2 within graphene oxide nanosheets and its application as a photocatalyst and a Schottky diode

The hybrid of graphene oxide (GO) nanosheets with well embedded nanospherical TiO2 was prepared through mechanical mixing using ultrasound. This modified TiO2-GO (TGO) composite exhibits reduced recombination of charge carriers. Benefiting from unique morphology and surface area (92 m2g−1), the TGO composite showed remarkable catalytic activity for the photodegradation of congo red (CR) and methyl orange (MO). The rate constant values were 0.0652 min−1 (pseudo first order) for CR (5 ppm) and 0.0631 min−1 for MO (5 ppm). The stability and aggregation behavior of TGO was examined using the dynamic light scattering (DLS) technique. The key parameter affecting photocatalytic performance is electron-hole separation. To illustrate this issue, a Schottky diode has been fabricated with TGO composite, in contact with aluminium. Important diode parameters i.e. ideality factor, series resistance, barrier height have been estimated from forward current-voltage (I-V) characteristics. Space charge limited current (SCLC) theory was employed to provide insight into the carrier transport properties of TGO and enhanced carrier mobility (2.11.10−6 m2V−1s−1) and low transit time (0.237.10−6 s) under illumination was obtained. The composite appears suitable for energy and photocatalytic applications.

Synergistic Effects of External Electric Field and Solvent Vapor Annealing with Different Polarities to Enhance β-Phase and Carrier Mobility of the Poly(9,9-dioctylfluorene) Films

In this work, the synergistic effects of external electric field(EEF) and solvent vapor annealing to enhance β-phase and carrier mobility of poly(9,9-dioctylfluorene)(PFO) films were investigated. It is found that EEF can promote the PFO β-phase conformation transition and orientate the PFO chains along the EEF direction with the assistance of polar solvent vapor annealing. PFO chain orderness is closely related to the solvent polarity. In particular, the β-phase content in the annealed film of strong polar chloroform vapor increases from 18.7% to 34.9% after EEF treatment. Meanwhile a characteristic needle-like crystal is formed in the film, as a result, the hole mobility is enhanced by an order of magnitude. The mechanism can be attributed to the fast polarization of solvent dipole under the action of EEF, thus forming a driving force that greatly facilitates the orientation of PFO dipole unit. Research also reveals that EEF driving of the PFO chains does not occur with an insoluble solvent vapor since the solvent molecules cannot swell the film, thus there is insufficient free volume for PFO chains to adjust their conformation. This research enriches the understanding of the relationship between solvent vapor annealing and EEF in orientation polymers, and this method is simple and controlled, and capable of integrating into large-area thin film process, which provides new insights to manufacture low-cost and highly ordered polymer films, and is of great significance to enhance carrier mobility and efficiency of photoelectric devices based on polymer condensed matter physics.

Recrystallization stimulated hierarchical structures for the simultaneous enhancement of Seebeck coefficient and electrical conductivity in Bi-Sb-Te alloys

Abstract Decoupling the Seebeck coefficient, electrical and thermal conductivity has been a great challenge in efforts to obtain thermoelectric materials with a high figure of merit (ZT) for power generation and cooling applications. In this work, p-type Bi0.5Sb1.5Te3 samples were fabricated by combining gas atomization and spark plasma sintering. Heat-treatment and subsequent consolidation during SPS stimulated the recrystallization of grains and reduced texture, contributing to reduced carrier scattering. This enhanced carrier mobility by 29%. The recrystallization also induces a hierarchy of fine and coarse crystal grains with random orientations. This mixed microstructure contributed to the simultaneous enhancement of the Seebeck coefficient and electrical conductivity, while reducing lattice thermal conductivity, due to effective phonon scattering by the fine grains and Sb2O3 nanoparticles. The significant improvement in power factor and relatively low κL resulted in a peak ZT of 1.1 at 350 K for the 470 °C treated sample. This was about 47% higher than the initial sample (ZT = 0.75 at 350 K). The average ZT for all the heat treated samples reached over unity in the range of 300–500 K. This work suggests that the spark plasma heat treatment and consolidation processes enable the recrystallization, allowing the thermoelectric properties to be decoupled, enhancing ZT.

Effect of residual water vapor on the performance of indium tin oxide film and silicon heterojunction solar cell

In this study, we investigate the effect of residual H2O pressure (PH2O) on the structural, electrical, and optical properties of indium tin oxide (ITO) film and the current-voltage (I-V) performance of silicon heterojunction (SHJ) solar cells. The ITO films and SHJ solar cell were prepared under different PH2O (3.75 × 10−7 Pa, 6 × 10−7 Pa, 10.25 × 10−7 Pa) by varying the pumping time before starting the fabrication process. The experimental results revealed the crystallinity of ITO films was suppressed with the increase in PH2O. Further, the sheet resistance of ITO films was reduced from 103 Ω/sq to 60 Ω/sq due to the enhanced carrier mobility, and the transmittance in near- infrared (NIR) region exhibited a slight increase, but the conversion efficiency of SHJ solar cells dropped dramatically from 23.3% to 22.79% due to the degradation of fill factor (FF). The analysis on n-a-Si:H/ITO and ITO/Ag contact properties indicated that such FF degradation could be attributed to the increased specific contact resistance for the two contacts, when PH2O was high. Finally, SHJ solar cell with conversion efficiency of 23.53% was achieved by restraining the residual H2O vapor during ITO deposition along with the optimization of transmittance in NIR region by adjusting the amount of O2 flow.

Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors

AbstractEfficient charge‐carrier injection is a critical requirement for high‐performance organic electronic devices, such as light‐emitting diodes, solar cells, and field‐effect transistors. In this work, a significantly improved charge‐carrier injection from high work‐function metal‐oxide electrodes in organic field effect transistors (OFETs) is demonstrated for amorphous organic semiconductors (OSCs) by using organic interlayers with a high ionization energy (IE). Molybdenum oxide (MoO3) exhibits limited injection into amorphous 2,2′,7,7′‐tetrakis(N,N‐diphenylamino)‐9,9‐spirobifluorene (Spiro‐TAD) and tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA) active layers, resulting in high contact resistance and threshold voltage. By inserting an interlayer of a few nanometers thick with high IE between the MoO3 electrode and the amorphous OSC films, the Spiro‐TAD and TCTA OFETs show a substantial enhancement in hole current, subthreshold swing, and effective charge carrier mobility due to the decreased contact resistance. However, for discontinuous interlayers formed on distinct grain domains as in the case of polycrystalline 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) films, the effect of the interlayer reduces. These results demonstrate that the utilization of smooth interlayers with IE higher than the semiconductor is a general approach to elevate the hole injection into amorphous OSCs with high IE in OFETs.

Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports

Abstract BiSbSe3 is a promising medium-temperature thermoelectric material on account of its intrinsically low thermal conductivity. To further enhance the thermoelectric performance in n-type BiSbSe3, we conduct Br doping at Se sites to optimize its carrier concentration and electrical conductivity, finally a maximum ZT of ∼0.8 in nanostructured BiSb(Se0.94Br0.06)3 is obtained at 700 K through mechanical alloying. Based on the optimal BiSb(Se0.94Br0.06)3 composition, we perform percolation effect with mixed grain sizes in nanoscale and microscale to enhance carrier mobility. It is found that carrier mobility is favorably improved by the addition of microscale grains (∼30 μm) in nanostructured BiSb(Se0.94Br0.06)3 matrix due to the reduced grain boundaries to carrier scattering, which benefits high electrical conductivity and power factor. Simultaneously, the BiSb(Se0.94Br0.06)3 matrix with mixed grain sizes still maintains very low thermal conductivity due to its intrinsically strong lattice anharmonicity. Owing to the optimized electrical properties and maintained low thermal conductivity, we obtain a maximum ZT value of ∼1.0 at 700 K in BiSb(Se0.94Br0.06)3–4C matrix with 40% microscale grains. This work provides a feasible method to optimize thermoelectric performance by designing microstructure with percolation effect.

Enhanced carrier mobility in anisotropic two-dimensional tetrahex-carbon through strain engineering

A recently predicted two dimensional carbon allotrope, tetrahex-carbon consisting of tetragonal and hexagonal rings, draws research interests due to its unique mechanical and electronic properties. Tetrahex-C shows ultrahigh strength, negative Poisson’s ratio, a direct band gap and high carrier mobility. In this work, we employ first-principles density-functional theory calculations to explore the directional dependence of electronic properties such as carrier effective mass and mobility in tetrahex-C. Tetrahex-C demonstrates strong anisotropicity in effective mass of charge carrier and therefore its mobility (electric conductance) exhibits a strong orientation preference. More interesting, we find that such unique anisotropic carrier effective mass and mobility can be controlled by simple uniaxial strain. The orientation dependence of effective mass of holes can be dramatically rotated by 90̊ through applying uniaxial tensile strain beyond ∼7% in the armchair direction. As a result, the intrinsic carrier mobility in tetrahex-C is significantly enhanced. The results are useful for potential electronic and mechanical applications in tetrahex-C.

Comparison of quantitative analyses using SIMS, atom probe tomography, and femtosecond laser ablation inductively coupled plasma mass spectrometry with Si1−XGeX and Fe1−X NiX binary alloys

Due to their electrical and physical properties, Si1−XGeX materials are widely used in microelectronic devices. In particular, the Ge component found within Si1−XGeX compounds is important for enhancing carrier mobility and altering the lattice constant of metal-oxide-semiconductor field-effect transistors. In this study, magnetic sector secondary ion mass spectrometry (magnetic sector SIMS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used to determine the accurate concentrations of major compositions present within binary alloy samples. However, quantitative SIMS analysis is limited by the matrix effect, which influences the sputter yield of an element in a compound and alters the secondary ionization yields. Quantitative deviations that were due to the matrix effect were reduced by using Cs cluster ions (MCs+ and MCs2+) instead of elemental ions; the SIMS results using the elements were, therefore, compared with those using MCs+ and MCs2+ cluster ions. In the case of Fe1−XNiX alloys that have a less matrix effect compared to Si1−XGeX alloys, both the Cs primary ion beam (Cs+) and an oxygen primary ion beam (O2+) were used to measure the Fe1−XNiX compositions. The quantitative results from the two different primary ion beams were then compared to understand the ionization process. Deviations in the quantitative values gained with the O2+ beam were lower than those obtained using the Cs+ primary ions, meaning that using oxygen as the primary ion improves the accuracy in quantifying Fe1−XNiX compounds. Other reliable tools for analysis such as atom probe tomography and femtosecond laser ablation inductively coupled plasma mass spectrometry were also used in the quantitative analysis, with results that were consistent with the most accurate results obtained using magnetic sector SIMS and ToF-SIMS.

Effect of annealing temperature on thermoelectric properties of bismuth telluride thick film deposited by DC magnetron sputtering

We report the thermoelectric properties of thick bismuth-telluride (Bi2Te3) films deposited on polyimide substrates by DC magnetron sputtering and annealed at various temperatures (150–350 °C). The influence of annealing temperature on the microstructure and electronic structure of thick Bi2Te3 films is discussed. In this work, the annealed film at 250 °C has the best thermoelectric property due to highest electrical conductivity and Seebeck coefficient. The main effect of annealing temperature was really helpful to improve crystalline structure and enhance carrier mobility, whereas the carrier concentration was reduced due to the volatile of tellurium atom during annealing. Chemical states of bound and unbound atoms (Bi, Bi3+, Te, and Te2‐) on the surface play an important role in electrical properties. The exceed temperature caused the micro-crack formation and affect carrier transport by the scattering. The power factor of Bi2Te3 deposited by DC magnetron sputtering and annealed at 250 °C is comparable to the power factors of thick Bi2Te3 film deposited by various deposition techniques. The output power of single-leg, thick, thermoelectric Bi2Te3 film annealed at 250 °C as a function temperature generated a power of 0.98 μW at a temperature difference of 50 °C.

Defects assisted visible light sensing in Zn1 − x(GaSi)x/2O

Hexagonal wurtzite Zn1 − x(SiGa)x/2O (x = 0, 0.0156, 0.0234, and 0.0312) with a space group of P63mc was synthesized using the solgel method. Investigations of structural, optoelectronic, and photo-sensing study of these samples were performed. Improved crystallinity of the co-doped samples was observed from structural and vibrational studies. The effect of higher charges Ga3+ and Si4+ on various latent defects of ZnO was studied. A predominantly n-type carrier concentration was noticed in all samples. Enhancement in carrier concentration, mobility, and conductivity was observed in the Ga–Si co-doped samples. In this work, the impact of intrinsic defects on photosensing was also studied. UV (290 nm) and visible lights of different wavelengths, blue (450 nm), green (540 nm), and red (640 nm), were sensed. The sensitivity toward the above-mentioned wavelengths was compared for all the samples. Photocurrent was modified with the illumination wavelengths (290, 450, 540, and 640 nm) and also varied with co-doping. A correlation of structural, defect, and optoelectronic properties was discussed, which revealed improved photo-response currents for UV light and for the blue, green and red lights. It was observed that pure ZnO is more sensitive to UV light. However, higher substitution yields better sensitivity for red light. The same result was found for green and blue light sensing.

In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse

Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and the corresponding photodetector performance is experimentally studied. Compared with the unpassivated GaAs1–xSbx core-only NWs, the GaAs1–xSbx/InP core/shell NWs have shown much stronger photoluminescence and cathodoluminescence intensities. Correspondingly, the fabricated single GaAs1–xSbx/InP core/shell NW photodetector shows a responsivity of 325.1 A W−1 (@ 1.3 μm and 1.5 V) that is significantly enhanced compared to that of single GaAs1–xSbx core-only NW photodetectors (143.5 A W−1), with a comparable detectivity of 4.7 × 1010 and 5.3 × 1010 cm√Hz/W, respectively. This is ascribed to the enhanced carrier mobility and carrier concentration by the in situ passivation, which lead to both higher photoconductivity and dark-conductivity. Our results show that in situ passivation is an effective approach for performance enhancement of GaAs1–xSbx NW based optoelectronic devices.

Improvement of the Optoelectrical Properties of a Transparent Conductive Polymer via a Simple Mechanical Pressure Treatment.

In this study, a simple and novel mechanical pressure treatment (MPT) was used to effectively improve the electrical and optical properties of ethylene glycol (EG)-doped PEDOT:PSS (EG-PEDOT:PSS) thin films, one of the most successful organic conductor materials ever which is are widely used in organic electronics because of their admirable film-forming property, high light transmittance, and excellent thermal stability. It is found that the conductivity of the EG-PEDOT:PSS films increased by 32% due to dramatically enhanced carrier mobility because an MPT improves the phase separation between PEDOT and PSS and then yields an interpenetrating conductive network. Meanwhile, the transmittance of the EG-PEDOT:PSS films in the near-infrared band was enhanced, and the surface roughness was reduced. These thin films retain their incredible flexibility as well; after 5000 times of 180° bending, the sheet resistance is basically unchanged. Considering that this MPT approach is already well developed in industrial applications, it is very hopeful to extend this technique in the field of organic electronics.