Within current work we present the impact of annealing temperature on the chemical and electron properties of alumina thin layered samples prepared by sol–gel method followed by spin-coating deposition. The determination of the impact was based on the comprehensive photoelectron spectroscopies investigations in X and UV range. Examinations were supported by the simulated density of states spectra that served also as a support for defect energy level assignment in the valence band region from X-ray photoelectron spectroscopy data. Moreover, the quality of the layers was additionally monitored with atomic force microscopy. We demonstrate that our technology results in continuous, homogenous and smooth layers of controlled stoichiometry. Our approach allows direct control of the chemical and electronic structure (e.g. work function, Wf, ionization energy, IE) with post-deposition temperature processing. We show that oxygen vacancies induced by temperature treatment are the main driving force changing the electronic structure. The control of the Wf and IE is possible in annealing conditions above 800 °C. Finally, we analyse carbon contamination impact on the obtained layers’ structure. Our findings may have a direct impact on the engineering of modern oxide-based electronics enabling cost reduction and more precise control of aluminium oxide layers–based devices.
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