Gallium oxide (Ga2O3) nanostructures (NSs) were synthesized via atmospheric pressure chemical vapor deposition (APCVD) technique assisted by hydrogen. The geometrical orientation in terms of the substrate angle was studied to investigate its influence on the morphological, compositional and optical properties of the material. The results revealed that the geometry, stoichiometry and optical parameters of Ga2O3 could be tuned by substrate angle variations during deposition. Tilting the substrate was found to enhance the step coverage of the substrate and the Ga/O atomic ratio above the stoichiometric value. Bandgap of the films was observed to vary inversely (ranged between 4.590 and 4.664eV) to the Ga/O atomic ratio. The refractive index at wavelength of 632.8 nm, dispersion and single oscillator energy of the prepared films were also evaluated, and were found to be in the range of 2.129–3.265, 20.952–56.520eV and 5.309–6.387eV, respectively, with the increase of substrate angle.