Energy Band Engineering Research Articles

Spintronics in GaN‐Based Semiconductors: Research Progress, Challenges and Perspectives

AbstractSpintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond‐complementary metal‐oxide‐semiconductor (CMOS) devices. GaN‐based semiconductors, characterized by weak spin‐orbit coupling, long spin relaxation time, and Curie temperature higher than room temperature, are considered ideal materials for advancing spintronics. In addition, GaN‐based semiconductors possess a variety of heterostructures, and different properties can be combined through energy band engineering, this enables addressing the limitation of GaN‐based semiconductors. Nevertheless, there are still challenges in practical applications; for instance, the mechanism of spin relaxation in GaN‐based semiconductors is still unclear, and efficient spin gating has not yet been realized. This review examines the progress of spintronics in GaN‐based semiconductors, and systematically summarizes the advancements in spin injection, transport, manipulation, and device application. The current challenges and future perspectives on the studies of spintronic devices based on GaN‐based semiconductors are also highlighted.

High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions.

The mixed-dimensional (MD) van der Waals (vdWs) heterojunction for photodetectors has garnered significant attention owing to its exceptional compatibility and superior quality. Low-dimensional material heterojunctions exhibit unique photoelectric properties attributed to their nanoscale thickness and vdWs contact surfaces. In this work, a novel MD vdWs heterojunction composed of one-dimensional (1D) Nb2Pd3Se8 nanowires and two-dimensional (2D) WSe2 nanosheets is proposed. The heterojunction's energy band engineering is accomplished by manipulating the Fermi level of the bipolar 2D material via gate voltage, resulting in a rectification characteristic that can be adjusted with gate voltage. Under 685 nm laser irradiation, it demonstrates exceptional self-powered photodetection performance, attaining a photoresponsivity of 1.45 A W-1, an ultrahigh detectivity of 6.8 × 1012 Jones, and an ultrafast response time of 37/64 μs at zero bias. In addition, a broadband photodetector from 255 to 1064 nm is realized. These results demonstrate the great potential of Nb2Pd3Se8/WSe2 MD heterostructures for advanced electronic and optoelectronic devices.

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor (TFT) using the elevated-metal metal-oxide (EMMO) architecture and indium−zinc oxide (InZnO). The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas (2DEG) at the interface quantum well, as verified using a metal−insulator−semiconductor (MIS) device. Although the 2DEG indeed contributes to a higher mobility than the monolayer channel, the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect, originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well. Benefited from the proper energy-band engineering, a high mobility of 84.3 cm2·V−1·s−1, a decent threshold voltage (V th) of −6.5 V, and a steep subthreshold swing (SS) of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

Narrowband Solar-Blind Photodetection of the Plasmonic (In0.3Ga0.7)2O3 Detector via the Synergetic Enhancement of Small-Sized Ag-Nanoparticle Photoabsorbance and Surface Modification.

Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (In0.3Ga0.7)2O3 thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (In0.3Ga0.7)2O3 thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect. Therefore, under the synergistic effect of enhanced photon absorbance and hot electron transfer, the performance of the detector is significantly improved, and its responsivity (R), external quantum efficiency, and detectivity (D*) are 193 mA/W, approximately 100%, and 1014 Jones, respectively, at a bias of -6 V. The fast response time and decay time are 634.6 and 194.1 ms, respectively; the rapid decay facilitated by AgNPs is attributed to the increased indirect recombination rate. AgNPs exhibit excellent narrowband response characteristics and absorbance properties in specific wavelength bands for the InGaO photodetector. This research lays the foundation for the practical application of localized surface plasmon resonance-enhanced photon-sensing capabilities.

Adjusting the energy band of Cu2O by changing the deposition conditions and its effect on photoelectrochemistry performance of Cu2O/TiO2 heterojunction

The band structure of heterojunction plays an important role in the performance of actual application and can be adjusted by the change of preparation condition. Herein, Cu2O nanofilms with different band structures were prepared via electrodeposition method by modifying the solution environment. With the value of pH increased from 7 to 12, the conductivity of the Cu₂O nanofilms shifted from n-type to p-type. Combined the obtained Cu2O film with TiO2 nanoarray, the Cu2O/TiO2 heterojunction were prepared. The photoelectrochemical performance of the Cu2O/TiO2 heterojunction was affected by the interfacial band structure. The T7 sample has higher photocurrent (450 μA) caused by the unique S-scheme band structure, the T11 sample with a p-n junction structure takes second place (225 μA). The n-n type II heterojunction has the lowest photocurrent (20 μA). The Fermi level of Cu2O nanofilm was affected by the type of defects, such as oxygen and copper vacancies, leading to changes of band structure at the interface between Cu2O and TiO2. The obtained result further illustrates the importance of energy band engineering, and provides route and sight for the development and application of Cu2O/TiO2 heterojunction.

Ultrasensitive Self-Powered Flexible Crystalline β-Ga2O3-Based Photodetector Obtained through Lattice Symmetry and Band Alignment Engineering.

Due to its portable and self-powered characteristics, the construction of Ga2O3-based semiconductor flexible devices that can improve the adaptability in various complex environments have drawn great attention in recent decades. However, conventional Ga2O3-based flexible heterojunctions are based on either amorphous or poor crystalline Ga2O3 materials, which severely limit the performance of the corresponding devices. Here, through lattice-symmetry and energy-band alignment engineering, we construct a high-quality crystalline flexible NiO/β-Ga2O3 p-n self-powered photodetector. Owing to its suitable energy-band alignment structure, the device shows a high photo-to-dark current ratio (1.71 × 105) and a large detection sensitivity (6.36 × 1014 Jones) under zero bias, which is superior than most Ga2O3 self-powered photodetectors even for those based on rigid substrates. Moreover, the fabricated photodetectors further show excellent mechanical stability and robustness in bending conditions, demonstrating their potential practical applications in flexible optoelectronic devices. These findings provide insights into the manipulation of crystal lattice and energy band engineering in flexible self-powered photodetectors and also offer guideline for designing other Ga2O3-based flexible electronic devices.

Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar Heterojunction.

Constructing a unipolar heterojunction is an effective energy band engineering strategy to improve the performance of photoelectric devices, which could suppress dark current and enhance detectivity by modulating the transfer of carriers. In this work, unipolar heterojunctions of Si/PbI2 and GaSb/PbI2 are constructed successfully for high-performance self-powered near-ultraviolet photodetection. Owing to the unique band offset of unipolar heterojunctions, the transport of holes is blocked, and only photogenerated electrons in PbI2 can flow unimpeded under the driving force of the built-in electric field. Thus, the recombination of photogenerated electron-hole pairs is suppressed, contributing to high-performance near-ultraviolet photodetection. The as-fabricated Si/PbI2 self-powered near-ultraviolet photodetector exhibits a low dark current of 10-13 A, a high Ilight/Idark ratio of 104, and fast response times of 26/24 ms, which are much better than those of the PbI2 metal-semiconductor-metal photodetector. Furthermore, the as-fabricated GaSb/PbI2 unipolar heterojunction photodetector also exhibits impressive self-powered near-ultraviolet photodetection behaviors. Evidently, this work shows the potential of unipolar heterojunctions for next-generation Si-based and GaSb-based high-performance photodetection.

Rational synthesis of core/shell heterostructured quantum dots for improved self-powered photodetection performance enabled by energy band engineering

Colloidal quantum dots (CQDs), especially core-shell QDs, have attracted dramatic interests as emerging materials in optoelectronic devices due to their size tuneable band-gap, high absorption coefficient, facile and low-cost synthesis routing, etc. However, the precise design of core/shell band engineering along with charge carrier transfer efficiency are still challenging, inevitably impacting the performance of optoelectronic devices. Herein, three different types of CdSe/CdS core-shell heterostructured QDs have been obtained via a proposed synthesis strategy of adjusting the core size but fixing the shell thickness. The performance of the core-shell QDs based self-powered photodetectors can be efficiently regulated by the optimization of synthesis strategy with the design of energy band alignment. Compared to the quasi type-II and the type-I QDs devices, the Ilight/Idark ratio of type-II heterostructure based photodetector is increased by ∼2 and ∼5 orders of magnitude, respectively. The champion device exhibits extraordinary optoelectronic performance in terms of ultrahigh light-to-dark current ratio of 105, photoresponsivity of 10.64 mA/W, at bias of 0 V, respectively. The charge carrier dynamics and transfer mechanisms of the QDs were further investigated, revealing the improved carrier separation and transportation efficiency induced by a strong build-in electric field in type-II CdSe/CdS core-shell heterostructure. This work provides a new strategy for the next-generation self-powered QDs optoelectronics enabled by the proposed synthesis approach along with the design of energy band alignment.

Energy band engineering of graphitic carbon nitride for photocatalytic hydrogen peroxide production

AbstractHydrogen peroxide (H2O2) is one of the 100 most important chemicals in the world with high energy density and environmental friendliness. Compared with anthraquinone oxidation, direct synthesis of H2O2 with hydrogen (H2) and oxygen (O2), and electrochemical methods, photocatalysis has the characteristics of low energy consumption, easy operation and less pollution, and broad application prospects in H2O2 generation. Various photocatalysts, such as titanium dioxide (TiO2), graphitic carbon nitride (g‐C3N4), metal‐organic materials, and nonmetallic materials, have been studied for H2O2 production. Among them, g‐C3N4 materials, which are simple to synthesize and functionalize, have attracted wide attention. The electronic band structure of g‐C3N4 shows a bandgap of 2.77 eV, a valence band maximum of 1.44 V, and a conduction band minimum of −1.33 V, which theoretically meets the requirements for hydrogen peroxide production. In comparison to semiconductor materials like TiO2 (3.2 eV), this material has a smaller bandgap, which results in a more efficient response to visible light. However, the photocatalytic activity of g‐C3N4 and the yield of H2O2 were severely inhibited by the electron‐hole pair with high recombination rate, low utilization rate of visible light, and poor selectivity of products. Although previous reviews also presented various strategies to improve photocatalytic H2O2 production, they did not systematically elaborate the inherent relationship between the control strategies and their energy band structure. From this point of view, this article focuses on energy band engineering and reviews the latest research progress of g‐C3N4 photocatalytic H2O2 production. On this basis, a strategy to improve the H2O2 production by g‐C3N4 photocatalysis is proposed through morphology control, crystallinity and defect, and doping, combined with other materials and other strategies. Finally, the challenges and prospects of industrialization of g‐C3N4 photocatalytic H2O2 production are discussed and envisioned.

Exploring high-performance photonic crystal slow light waveguides through deep reinforcement learning

Supervised deep learning is not really suitable for automatic inverse design of photonic crystal waveguides. There are three reasons for this:(1) Pre-training of the network requires a large number of datasets, which leads to a lot of time spent in the physical simulation process. (2) The one-to-many mapping problem often arises during the reverse design process. (3) It is difficult to realize the inverse design of photonic structures beyond the performance of the dataset. These problems can be well addressed by deep reinforcement learning (DRL). Here, deep reinforcement learning is proposed for the first time for the design of complex slow-light photonic crystal waveguides. The design using DRL took less than 72 h to obtain a photonic crystal waveguide with a normalized delay bandwidth product of 0.449 and group index of 48.72. By increasing the scaling factor of bandwidth in the reward function to 0.25, the bandwidth value of the optimized slow-light waveguide increases to 50.01 nm with an NDBP value of 0.39. The slow-light performance of both structures is verified by FDTD. In addition, the NDBP value is further optimized to 0.46 if the size of the structural parameters is not constrained. Compared with deep learning, DRL can improve the sampling efficiency by more than an order of magnitude and is not plagued by the three problems mentioned above. This work confirms the effectiveness of DRL in the inverse design of energy band engineering. DRL can be widely used in the optimization of energy band related performance.

Performance tweaking of Co3O4 UV radiation detector via zirconium dopant microstructural and photo-electronic engineering

Incorporation of dopant impurities in semiconducting metal oxide nanostructures has been presumed to increase the pace at which photo-induced holes and electrons separate due to possible bandgap engineering and oxygen vacancy modulations. In this study, we have adopted an electrodeposition technique using a three-electrode configuration for the preparation of Co3O4 thin film samples and investigated the effect of Zr as a dopant ion on the UV radiation sensing performance of nanostructured Co3O4 host material via energy band engineering and microstructural modulation. Consistency in optical energy band gap measurements of the deposited Zr-doped Co3O4 (Zr@Co3O4) was unveiled with the aid of two models: Tauc’s and absorption spectrum fitting (ASF) methods. Ag/Zr@Co3O4/ITO/glass UV radiation detector was fabricated and a sample with 3 % Zr-dopant content demonstrated high UV-365 nm detector performance: detectivity, 1.2 ×1011 Jones, and responsivity, 1818 mA W−1, with high cycling stability, attributable to the host's dopant microstructural tailoring, and the enhancement in its electronic charge carrier number and their scattering potentials within the host's band structure, thanks to the synergistic impacts of dopant ion incorporation and UV irradiation.

A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications.

Retina-inspired visual sensors play a crucial role in the realization of neuromorphic visual systems. Nevertheless, significant obstacles persist in the pursuit of achieving bidirectional synaptic behavior and attaining high performance in the context of photostimulation. In this study, we propose a reconfigurable all-optical controlled synaptic device based on the IGZO/SnO/SnS heterostructure, which integrates sensing, storage and processing functions. Relying on the simple heterojunction stack structure and the role of energy band engineering, synaptic excitatory and inhibitory behaviors can be observed under the light stimulation of ultraviolet (266 nm) and visible light (405, 520 and 658 nm) without additional voltage modulation. In particular, junction field-effect transistors based on the IGZO/SnO/SnS heterostructure were fabricated to elucidate the underlying bidirectional photoresponse mechanism. In addition to optical signal processing, an artificial neural network simulator based on the optoelectrical synapse was trained and recognized handwritten numerals with a recognition rate of 91%. Furthermore, we prepared an 8 × 8 optoelectrical synaptic array and successfully demonstrated the process of perception and memory for image recognition in the human brain, as well as simulated the situation of damage to the retina by ultraviolet light. This work provides an effective strategy for the development of high-performance all-optical controlled optoelectronic synapses and a practical approach to the design of multifunctional artificial neural vision systems.

Energy band engineering in GaS/InS and GaSe/InS van der Waals bilayers by interlayer stacking design and applied vertical electric field - An ab-initio theoretical calculation based approach

In this work, for the first time, an extensive theoretical investigation of the structural and electronic properties of the van der Waals (vdW) bilayer heterostructures of two-dimensional (2D) Gallium Sulphide (GaS)/Indium Sulphide (InS) and Gallium Selenide (GaSe)/Indium Sulphide (InS), is performed using density functional theory calculation. In this context, the effects of natural and artificial interlayer stacking configurations, and externally applied out-of-plane direction electric field are emphasized. The structural, thermal, and dynamic stabilities of individual bilayers are assessed from the cohesive energy/interlayer interaction energy, phonon spectrum, and molecular dynamics evolution, respectively. The effects of the vdW bilayer environment on the in-plane structural parameters like lattice vector, bond length, and bond angle of the constituent monolayers are comprehensively investigated. The electronic properties are estimated from the band edge energy, the density of states, energy bandgap, and interlayer energy band alignment, which are systematically analysed from the interlayer interactions in terms of interlayer distance, out-of-plane charge distribution, and interlayer charge transfer. The key findings demonstrate that the interlayer stacking engineering and applied out-of-plane electric field can induce unique and tailor-made modulations in the overall electronic properties of GaS/InS and GaSe/InS bilayer, which can be exploited in favour of electronic/optoelectronic applications.

Interfacial energy-band engineering for high open-circuit voltage of rear emitter p-type crystalline silicon solar cells

Rear emitter p-type crystalline silicon (c-Si) tunnel oxide passivating contact (P-TOPCon) devices with low-resistivity (≤1 Ω.cm) c-Si wafer and high-conductivity phosphorus doped (n-type) polysilicon passivating contact (n-poly-Si PC) are expected to achieve high built-in potential (Vbi) and thus open-circuit voltage (Voc). However, the results indicate that the high conductivity of n-poly-Si PC considerably deteriorates the interface passivation quality and lowers the device's Voc. A crucial factor to consider is that the hole and electron can tunnel and recombine together at the c-Si/n-poly-Si PC contact, resulting in a decrease in the quality of interfacial passivation. To inhibit carrier tunnel diffusion and enable energy band engineering at the interface for achieving high Voc, a thin intrinsic poly-Si buffer layer (10 nm) is inserted between SiO2 and n-poly-Si PC. When compared to a device without a buffer, a device with the buffer exhibits a significant improvement in passivation quality and hence Voc. The device with buffer has a Voc of 705 mV and an efficiency of 23.5 %, while that without buffer is 681 mV and 22.6 %, respectively. The introduced buffer has little effect on the industrial manufacturing process, but it does significantly enhance Voc. It has the potential to improve the efficiency of the P-TOPCon devices.

Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices

Van der Waals (vdW) heterostructures based on inorganic layered materials have been demonstrated as potential candidates for a variety of electronic applications due to their flexibility in energy band engineering. However, the presence of unstable charge-trapping states in atomically thin two-dimensional (2D) materials may limit the performance of devices. Here, we aim to conduct a systematic investigation on hybrid heterostructured memory devices that consist of 2D layered organic and inorganic materials. The objective is to explore the potential of these devices in offering efficient charge-trapping states. Molybdenum disulfide (MoS2) is employed as a channel, while N, N′-Dimethyl-3,4,9,10-perylenedicarboximide (Me-PTCDI) serves as the charge-trapping layer to store charges from MoS2. The hysteresis window of these heterostructured devices can be effectively modified within a range of 13–70 V by manipulating both the thickness of the organic layer and the gate voltages. The largest hysteresis window is found in a combination of a few-layer Me-PTCDI (12.6 nm) and MoS2 (6 nm), showing a high on/off current ratio (>104) and a long retention time (104 s). Furthermore, the endurance test, which lasts for over 1000 cycles, demonstrates an exceptional level of stability and reliability. In addition, multilevel memory effects can be observed when gate pulses with different widths and amplitudes are applied. These 2D hybrid heterostructured devices have the capability to broaden the scope of material systems and present substantial potential for functional neuromorphic applications.

In-situ Ag SPR assisted S-scheme ZnO-CdS multi-layer core-shell heterojunction for enhanced photocatalytic degradation: Energy band engineering and reactive dynamics

Constructing an efficient photocatalyst to accelerate charge separation with strong redox capacity is in pursuit all the way. Herein, a novel heterojunction was achieved for efficient organic degradation, which took advantages of S-scheme mechanism, metal surface plasma resonance (SPR) and unique morphology. The multi-layer core-shell structure can be regulated by aging time with template-free, and Ag nanoparticles were modified on the heterojunction by photochemical deposition in situ to facilitate electron transport and improve stability. S-scheme and SPR endues the heterojunction with broad light absorption, increased light utilization, efficient carrier separation, and strong redox capacity. An examination of reactive dynamics revealed that superoxide radicals and hydroxyl radicals are crucial for oxidative degradation. Introducing oxygen during the reaction process has been found to enhance the efficiency by 7 %. This article furnishes novel insights into a coordination of energy band engineering, structure regulation, as well as reaction process adjustment for facilitating photo-degradation reactions.

Unraveling volcano trend in OER of metal–organic frameworks with asymmetric configuration through energy band engineering

Local symmetry breaking of catalysts has emerged as an effective strategy for finely tuning oxygen evolution reaction (OER) activity, yet the fundamental comprehension regarding asymmetric structure-activity relationships remains limited. Here, we propose the energy band engineering to bridge the correlation between established asymmetric electronic structure and adsorption/desorption ability of reaction intermediates within metal-organic frameworks (MOFs). The deliberate synthesis of CoM-MOFs (M=Cu, Ni, and Fe) with distinct coordination microenvironments enables the customization of asymmetric Co-O-M electronic structure. A volcano-shaped relationship can be revealed between calculated OER overpotential and average d‐band center (Ed) energy level for both active Co sites and substituted M. The CoFe-MOF, located close to the summit, showcases the balanced reaction intermediate behavior and thus for enhanced OER activity. This work presents a promising approach to thoroughly understand asymmetric electronic structure-activity relationships from the perspective of energy band engineering and further guide the discovery of high-efficiency MOF-based OER catalysts.

Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of β-Ga2O3 ultraviolet photodetectors

Swift heavy Ta ions with an ultra-high energy of 2896 MeV are utilized for irradiation of β-Ga2O3 photodetectors. Noteworthy variations in device performance under different wavelengths are observed. Under 254 nm light illumination, the photocurrent of the devices exhibit degradation at low ion fluences but gradually recover and even surpass the performance of non-irradiated devices at the irradiation fluence of 1 × 1010 cm−2. Conversely, under 365 nm light illumination, photocurrent increases at low fluence but slightly decreases at the same high fluence of 1 × 1010 cm−2. Cathodoluminescence spectra and first-principles calculations elucidate the mechanism underlying the evolution of device performance with irradiation fluence. At low irradiation fluence, the introduction of point defects such as oxygen vacancies and gallium vacancies leads to an expansion of the bandgap, resulting in a decline in photocurrent under 254 nm light illumination. Additionally, deep defect levels are generated by these point defects, promoting an enhancement of photocurrent under 365 nm light illumination. Higher fluences transform these point defects into complex defects such as Ga–O pair vacancies, resulting in a reduction in the bandgap. Consequently, an increase in photocurrent is observed for devices illuminated with 254 nm light. However, at high irradiation fluences, charge recombination induced by the presence of deep defect levels becomes more significant, leading to a decrease in photocurrent when exposed to 365 nm light. No matter what, at 1 × 1010 cm−2 fluence, β-Ga2O3 photodetectors still maintain excellent performance, implying their strong radiation resistance and immense potential for application in space environments.

Boosting Thermoelectric Performance of PbBi2Te4 via Reduced Carrier Scattering and Intensified Phonon Scattering.

Materials with low intrinsic lattice thermal conductivity are crucial in the pursuit of high-performance thermoelectric (TE) materials. Here, the TE properties of PbBi2Te4-xSex (0 ≤ x ≤ 0.6) samples are systematically investigated for the first time. Doping with Se in PbBi2Te4 can simultaneously reduce carrier concentration and increase carrier mobility. The Seebeck coefficient is significantly increased by doping with Se, based on the density functional theory calculation, it is shown to be due to the increased bandgap and electronic density of states. In addition, the lattice strain is enhanced due to the difference in the size of Se and Te atoms, and the multidimensional defects formed by Se doping, such as vacancies, dislocations, and grain boundaries, enhance the phonon scattering and reduce the lattice thermal conductivity by about 37%. Finally, by using Se doping to reduce carrier concentration and thermal conductivity, a large ZTmax = 0.56 (at 574K) is achieved for PbBi2Te3.5Se0.5, which is around 64% larger than those of the PbBi2Te4 pristine sample. This work not only demonstrates that PbBi2Te4 is a potential medium temperature thermoelectric material, but also provides a reference for enhancing thermoelectric properties through defect and energy band engineering.

Compliant substrate epitaxial MgZnO films using fluorphlogopite mica approaching homoepitaxy quality

Based on the success of high-quality epitaxial grown ZnO film on the compliant Fluorphlogopite Mica (F-Mica) substrate, the growth of MgZnO films on F-Mica substrate is studied to promote the development of flexible ZnO quantum well structures and devices. These flexible epitaxial MgZnO films show high luminous quality approaching homoepitaxial films. The phenomenon of Mg compositional fluctuations is confirmed by the research on band tail state. The effect of the compositional fluctuations on epitaxial growth dynamical and thermodynamic processes is also revealed by the comprehensively investigation of the crystal quality, optical properties, morphology, and growth rate. The study provides guidance for energy band engineering of ZnO on flexible substrates, and lays the foundation for the bendable optoelectronic devices on F-Mica substrate.