Endurance Behavior Research Articles

Translation, cross-cultural adaptation and psychometric properties of the Urdu version of the avoidance endurance behavior questionnaire in patients with chronic musculoskeletal pain.

The Avoidance Endurance Questionnaire (AEQ) successfully measures the fear-avoidance and endurance-related responses to chronic pain. The objective of this study was to translate, cross-culturally adapt AEQ into Urdu and assess the reliability and validity of the Urdu version. For the translation and cross-cultural adaptation process, the Beaton Guidelines were followed. A total of 103 participants responded to the Urdu version of the AEQ SF-12, Pain Catastrophizing Scale (PCS) and Numeric Pain Rating Scale (NPRS) at baseline and after 48 hours. The test-retest reliability was assessed using the intraclass correlation coefficient (ICC). Cronbach's alpha was used to measure internal consistency. To measure validity, Pearson's correlation between the subscales of AEQ-Urdu and other outcome measures (SF-12, PCS and NPRS scores) were used (p< 0.05). The mean age of the total 103 participants was 32.7 ± 10.90 among which 45 (43.6%) were male and 58 (56.3%) were female. The pre-final version of the translated AEQ was tested on 40 Urdu speaking participants and no major changes were made. The Cronbach's alpha for all subscales of the AEQ-Urdu ranged from 0.848-0.990. AEQ-U showed an excellent test-retest reliability with the ICC ranging from 0.775-0.996. The majority of the subscales of AEQ showed significant (p< 0.05) positive correlation with pain scales (PCS and NPRS) and negative correlation with the domains of SF-12. The AEQ-U has reliable and valid construct validity, good internal consistency, and test-retest reliability, indicating that it has adequate psychometric features and can be a useful tool for evaluating pain responses in patients with chronic musculoskeletal pain.

Evaluating the Effectiveness of Transfer Learning for Predicting the Risk of Autosomal Recessive Diseases Using Pre-Trained Deep Learning Models.

Given the large degree of genetic variability and complicated aggregation, the order of autosomal recessive ataxias faces a significant challenge. As new innovations are developing for extended targeted quality testing, we conducted a thorough intentional review of the literature to look at all recessive ataxias in order to suggest another grouping and suitably embrace this field. The most well-known autosomal recessive genetic disease in the Caucasian population is cystic fibrosis. Expanding knowledge about sub-atomic pathology from one angle enables better description of the changes in CFTR quality and from another viewpoint builds the persuasive force of atomic testing. Accurately predicting endurance in cystic fibrosis (CF) patients can help determine the optimal timing for lung transplantation (LT) in patients with end-stage respiratory disease. Current recommendations state that if the restricted expiratory volume (FEV1) is less than 30% of theoretical, the patient should undergo her LT test. Although FEV1 certainly plays a role in CF-related death, we expected endurance behavior in CF patients to show significantly more variability. Since it is automated, clinical practitioners might very well use it to build prognostic models without needing a deep understanding of machine learning. Our studies showed that the model developed using Auto Prognosis is more accurate than existing rules and other competing models.

Brain‐inspired Multimodal Synaptic Memory via Mechano‐photonic Plasticized Asymmetric Ferroelectric Heterostructure

AbstractNeuromorphic devices capable of emulating biological synaptic behaviors are crucial for implementing brain‐like information processing and computing. Emerging 2D ferroelectric neuromorphic devices provide an effective means of updating synaptic weight aside from conventional electrical/optical modulations. Here, by further synergizing with an energy‐efficient synaptic plasticity strategy, a multimodal mechano‐photonic synaptic memory device based on 2D asymmetric ferroelectric heterostructure is presented, which can be modulated by external mechanical behavior and light illumination. By integrating the asymmetric ferroelectric heterostructured field‐effect transistor and a triboelectric nanogenerator, the mechanical displacement‐derived triboelectric potential is ready for gating, programming, and plasticizing the synaptic device, resulting in superior electrical properties of high on/off ratios (&gt; 107), large storage windows (equivalent to ≈95 V), excellent charge retention capability (&gt; 104 s), good endurance (&gt; 103 cycles), and primary synaptic behaviors. Besides, optical illumination can effectively synergize with mechanoplasticity to implement multimodal spatiotemporally correlated dynamic logic. The demonstrated multimodal memory synapse provides a facile and promising strategy for multifunctional sensory memory, interactive neuromorphic devices, and future brain‐like electronics embodying artificial intelligence.

BiFeO3/SrTiO3 superlattice-like based ferroelectric memristors with pronounced artificial synaptic plasticity

Memristors are attracting widespread attention for their multilevel storage capacity and synaptic learning ability. Ferroelectric memristors, with resistance switching based on polarization reversal, offer uniform threshold voltage and analog resistance modulation. By preparing superlattice-like ferroelectric films, the ferroelectric properties can be significantly enhanced, thereby improving the memristive characteristics. In this study, the constructed BiFeO3/SrTiO3 (BFO/STO) superlattice-like structure increases the remanent polarization by approximately 200 % compared to a single-layer BFO structure, as well as the dramatically enhanced resistance switching performance. Notably, the Pt/(BFO/STO)2/NSTO device shows superior storage performance, with extended endurance (1000 cycles), reliable retention (10000 seconds) and fundamental synaptic behaviors being demonstrated. Finally, simulations for handwritten digit recognition classification, involving modulation of conductance to vary synaptic weights, achieve an impressive accuracy of 87.46 %, showing great promising for applications in information storage and neuromorphic computing.

Multilevel Conductance States of Vapor-Transport-Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation.

The pursuit of advanced brain-inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (Sb2S3) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin-film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of Sb2S3 thin films deposited via the vapor transport deposition technique. Experimental results indicate that the Ag/Sb2S3/Pt device possesses properties suitable for memory applications, including low operational voltages, robust endurance, and reliable switching behavior. Further, the reproducibility and stability of these properties across different device batches validate the reliability of these devices for practical implementation. Moreover, Sb2S3-based memristors exhibit artificial neuroplasticity with prolonged stability, promising considerable advancements in neuromorphic computing. Leveraging the photosensitivity of Sb2S3 enables the Ag/Sb2S3/Pt device to exhibit significant low operating potential and conductivity modulation under optical stimulation for memory applications. This research highlights the potential applications of Sb2S3 in future memory devices and optoelectronics and in shaping electronics with versatility.

Carbon quantum dots boosted resistive switching and magnetic properties in Co3O4-based memory devices

Carbon quantum dots (CQDs) could create opportunities of modulating resistive switching behaviors due to their unique electrical performance. Here, CQDs are introduced to enhance switching uniformity and magnetic properties in Co3O4 thin film memory devices. Compared with the pure Co3O4-based device, the device with CQDs exhibited better performance, such as a reduced initialization voltage, uniform distribution of Set and Reset voltages, stable endurance behavior, and enhanced magnetization performance. The fitting results of current-voltage curves showed that the low-resistance states and high-resistance states of the devices obey Ohmic conduction and Schottky emission, respectively. The improvement in resistive switching properties is ascribed to the formation and rupture of confined conductive filaments due to that CQDs enhanced the local electric field, which can efficiently guide the filament growth and suppress the randomness of filament growth. Magnetization modulation associated with resistive switching involves in the variation of oxygen vacancies concentration and the conversion between Co2+ and Co3+. The present study exhibits an effective path to enhance resistive switching and magnetic properties, which shows promising application to design multifunctional electro-magnetic integrated devices.

A carbon conductive filament-induced robust resistance switching behavior for brain-inspired computing.

Memristors have revolutionized the path forward for brain-inspired computing. However, the instability of the nucleation process of conductive filaments based on active metal electrodes leads to the discrete distribution of switching parameters, which hinders the realization of high-performance and low-power devices for neuromorphic computing. In response, a carbon conductive filament-induced robust memristor is demonstrated with variation coefficients as low as 3.9%/-1.18%, a threshold power as low as 10-9 W, and 3 × 106 s retention and 107 cycle endurance behaviors can be maintained. The recognition accuracy for Modified National Institute of Standards and Technology (MNIST) handwriting is as high as 96.87%, attributed to the high linearity of the iterative updating of synaptic weights. The demodulation and storage functions of the American Standard Code for Information Interchange (ASCII) are demonstrated by programmable pulse modulation. Notably, the transmission electron microscopy (TEM) images allow the observation of carbon conductive filament paths formed in the low resistance state. First-principles calculations analyze the energetics of defects involved in the diffusion of carbon atoms into MoTe2 films. This work presents a novel guideline for studying memristor-based neuromorphic computing.

54 Individuals Employing Extreme Coping Behaviors Correlated with Increased Severity of Symptoms Following mTBI

Objective:Approximately 10-15% of patients with mild traumatic brain injury (mTBI) report persistent, chronic symptoms more than one month later. Coping behaviors after mTBI can range from fear avoidance (FA), or a reluctance to return to activity because of the fear of symptom exaggeration, to endurance (END), or an overly aggressive return to activity. We evaluated how coping strategy relates to self-reported symptoms in patients with prolonged recovery from mTBI.Participants and Methods:Participants were 72 individuals (age 37.8 + 18.4, 65% female) who sustained a mTBI at least one month prior to assessment (median (IQR) = 5.5 (2.0-11.3) months). Participants completed the Brain Injury Recovery Disposition Scale (BIRDS) to assess FA and END behaviors, and Sport Concussion Assessment Tool (SCAT5) Symptom Inventory. A BIRDS spectrum score was calculated as the difference between FA and END scores to determine individual coping behavior on a spectrum from extreme FA (more negative) to extreme END (more positive). SCAT5 symptoms were separated into four domain scores: somatic, cognitive, sleep, and emotion. Regressions were performed for each outcome examining their potential linear and quadratic associations to coping behavior (i.e., BIRDS spectrum score). Follow-up regressions were performed covarying for age and sex to explore the potential influence of these variables on each outcome.Results:The linear and quadratic components of the BIRDS spectrum score were not significantly related to total number of persisting concussive symptoms. For overall total symptom severity, the quadratic component of the relationship was significant (B = .24, p = 0.04). Visualization of the overall trend line suggested that symptom severity was highest on the extreme FA side of the BIRDS spectrum (highly negative BIRDS spectrum score), decreased as coping behavior become more balanced (BIRDS spectrum score surrounding “0"), plateaued, then increased abruptly on the extreme END side (highly positive BIRDS spectrum score). For cognitive symptoms, the linear component of the BIRDS spectrum score was significant (B = -.28, p = 0.02) and the quadratic component was marginally significant (B = .22, p = 0.06). The quadratic (but not linear) component was significantly related to both the severity of sleep (B = .31, p = 0.01) and emotion symptoms (B = .25, p = 0.03). Finally, neither the linear nor quadratic components were significantly related to the somatic symptom severity. After covarying for age and sex, the quadratic component remained significant for total symptom severity (p = 0.05) as well as the linear component for cognitive severity (p = 0.02).Conclusions:Both extreme “fear avoidance” and “endurance” coping styles may be related to more severe chronic mTBI symptoms, especially in domains of sleep and emotion symptoms. Patients with balance of both fear avoidance and endurance behaviors may be more likely to experience less severe symptoms even among mTBI patients with persistent complaints. Identifying coping behavior styles early after mTBI could improve prognostication and help with developing personalized treatment plans to improve patient recovery. Future research with larger sample sizes should further examine the influence of age and sex on the relationship between coping behavior and symptom severity.

Emulating learning behavior in a flexible device with self-formed Ag dewetted nanostructure as active element

Neuromorphic devices are a promising alternative to the traditional von Neumann architecture. These devices have the potential to achieve high-speed, efficient, and low-power artificial intelligence. Flexibility is required in these devices so that they can bend and flex without causing damage to the underlying electronics. This feature shows a possible use in applications that require flexible electronics, such as robotics and wearable electronics. Here, we report a flexible self-formed Ag-based neuromorphic device that emulates various brain-inspired synaptic activities, such as short-term plasticity and long-term potentiation (STP and LTP) in both the flat and bent states. Half and full-integer quantum conductance jumps were also observed in the flat and bent states. The device showed excellent switching and endurance behaviors. The classical conditioning could be emulated even in the bent state.

Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication

A memristor is a two-terminal electrical component with the scope of future computing applications and analog electronics. In this report, bismuth sulfide decorated one-dimensional carbon nitride nanotube was synthesized and characterized with various analytical techniques. The electrical property of the synthesized material was measured using a two-terminal metal–insulator–metal type of device that exhibited the resistive switching characteristics with the ON to OFF ratio of 2 × 103. The electron transport mechanism of the device was followed by Schottky emission and Poole–Frenkel emission for a low conductance state and Ohmic conduction behavior at the high conductance state. A decrease in the trap depth was identified in the simulation study with increasing applied potential and that supported the proposed mechanism. Read endurance and retention behavior of the device are stable in nature, supported by the statistical analysis. Furthermore, a hybrid logic gate was designed using two identical memristors, one CMOS inverter, one resistor, one voltage divider, and a buffer gate. The designed logic gate exhibited stable nand and nor gate operation based on the control signal.

Graphene Quantum Dots as an Oxygen Reservoir for Topotactic Phase Transition‐Based Memristive Devices

AbstractA novel class of transition metal oxides, capable of reversible topotactic phase transition between the oxygen‐deficient brownmillerite and oxygen‐rich perovskite, has emerged as a promising material for memristive and magnetoelectric devices. However, the absence of a local oxygen source in the device structure necessitates an oxygen exchange process between the surrounding atmosphere and the switching layer during operation, which can lead to unreliable device performance. In this study, graphene quantum dots (GQDs) are introduced into a SrFe0.5Co0.5Ox memristive device as an oxygen reservoir for the nanoscale topotactic redox process. The SrFe0.5Co0.5Ox memristive devices with GQDs exhibit reliable resistive switching performance compared to SrFe0.5Co0.5Ox devices without GQDs. To understand the effect of GQDs on the device structure, a pulse endurance test is carried out in a high vacuum. The devices with GQDs show rather good endurance behavior, while devices without GQDs exhibit endurance failure. These results provide a deeper understanding of the potential use of GQDs in enhancing the performance of SrFe0.5Co0.5Ox memristive devices, with implications for tuning nanoscale topotactic phase transition for multi‐functional properties.

Endurance Behavior of Z-Shaped Charge Plasma Tunnel FET for Biosensing Application

The tunneling field effect transistor (TFET) is a viable candidate for designing a highly sensitive biosensor. In this work, a doping-less Z-shaped dielectrically modulated charge plasma TFET (CPTFET) structure with misaligned cavity region on channel and source has been proposed for label-free biosensing applications. To design the device, charge plasma technique has been employed, where appropriate metal workfunction is used over intrinsic silicon to create n[Formula: see text] drain and p[Formula: see text]source regions. The charge plasma approach reduces thermal budget, random dopant fluctuation (RDF) and steps required for fabrication. The Z-shaped CPTFET includes the advantage of abrupt profile of doping at source-channel (tunneling) junction. Because cavities are created in source and gate oxide region, the abrupt doping profile suppresses ambipolar behavior and improves sensitivity. The performance of the proposed device for both charged and neutral biomolecules in terms of electric field, band energy, transfer characteristics, [Formula: see text] ratio and subthreshold swing (SS) has been examined. The response of other parameters like cavity thickness and cavity length on ON current has been analyzed using the Silvaco ATLAS device simulator.

A Phosphate‐based Organic Polymer Nanocontainer Efficiently Hosts Ag/Ru Nanoparticles for Heterogeneous Catalytic Reduction of Nitroaromatics and Oxidation of Benzyl Alcohols

AbstractOrganic polymer networks (OPNs) are an interesting class of materials showing immense potential for supporting various metal nanoparticles for their heterogeneous catalytic applications. Herein, we delineate a protocol for generating metal‐based nanoparticles including silver nanoparticles (AgNPs) and ruthenium nanoparticles (RuNPs) within a phosphate‐based OPN (OPN‐4) prepared by the copolymerization of phosphoryl chloride and 1,3,5‐(4‐hydroxyphenyl)benzene in order to generate the heterogeneous catalysts, M@OPN‐4 (M=Ag/Ru). OPN‐4 emerged as an excellent host for the loading of these nanoparticles. These nanoparticles loaded OPN‐4 were characterized by several techniques including scanning and transmission electron microscopy (SEM, TEM), thermogravimetric analysis (TGA), X‐ray photoelectron spectroscopy (XPS), powder X‐ray diffraction (PXRD), and FTIR studies. M@OPN‐4 acted as the heterogeneous catalysts towards various organic reactions including reduction of nitroaromatics (Ag@OPN‐4) and oxidation of benzyl alcohols (Ru@OPN‐4) furnishing desired products from moderate to excellent yield with high selectivity over a broad range of substrates. They also exhibited easy recovery via filtration and reuse for up to five cycles without losing their catalytic activity significantly. Above all, the as synthesized catalysts were found to possess air and moisture endurance, high cost‐effectiveness and robust behavior. Thus, the OPN‐4 nanocontainer could establish itself as a versatile host towards different metal nanoparticles attributed to electron donating phosphate moiety.

Thermionic emission assisted charge conduction mechanisms across LaMnO3 / La0.7Ca0.3MnO3 interface of manganite thin film structure

In the present communication, temperature dependence of resistive switching (RS) behavior across chemically grown LaMnO3/La0.7Ca0.3MnO3 (LMO/LCMO) interface have been discussed by employing various theoretical approaches and mechanisms. Temperature dependent RS behavior of LMO/LCMO interface highlights impactful switching between high resistance state (HRS) and low resistance state (LRS) under reverse bias mode through an active role of depletion region. Trapping–detrapping processes assisted charge conduction has been identified as a source of RS nature of LMO/LCMO interface. Thermionic emission model and space charge limited conduction (SCLC) mechanism have been employed to understand the charge conduction and charge transport across LMO/LCMO interface. Present structure of Ag/LMO/LCMO/Ag has also been investigated for possible retention and endurance behaviors under different external parameters which verify the stability, reliability, reproducibility, non–volatile nature and applicability of LMO/LCMO interface.

"It's all my fault": a qualitative study of how heterosexual couples experience living with vulvodynia.

Vulvodynia, a chronic genital pain disorder with a high lifetime prevalence among women, has a significant negative impact on both women and their partners. Although there is a growing body of literature on the experiences of women with vulvodynia, there has been little research on the condition's implications for partners and romantic relationships. The aim of this study is to explore how heterosexual couples experience living with vulvodynia. Eight Norwegian women diagnosed with vulvodynia by gynecologists were recruited with their partners (couples aged 19-32 years). Data was collected via individual semi-structured interviews and analyzed using inductive thematic analysis. Three main themes were identified in the analysis: Mysterious disorder, Social exclusion and Sexual expectations. The results show that the couples struggle with understanding the pain, as well as navigating their social and sexual lives. We discuss these findings in light of a new theoretical model: the fear-avoidance-endurance model of vulvodynia. Heterosexual couples living with vulvodynia experience communication difficulties with partners, health professionals, and their social network. This sustains avoidance and endurance behavior, increasing pain and dysfunction over time and giving rise to feelings of powerlessness and loneliness. Social expectations regarding male and female sexuality also promote guilt and shame for both parties in couples affected by vulvodynia. Our results suggest that heterosexual couples living with vulvodynia, as well as health professionals treating them, should be helped to communicate more effectively in order to break vicious circles of maladaptive avoidance and endurance behavior.

Sustained force production by the jaw-adductor muscles of a megalophagous frog, Ceratophrys cranwelli.

Most frogs have weak jaws that play a relatively minor role in tongue-mediated prey capture. Horned frogs (Ceratophrys spp.), however, follow the projection of a large tongue with a vice-like grip of their jaws to hold and immobilize prey. Prey include relatively large vertebrates, which they may restrain for minutes to possibly hours. High endurance behaviors, such as prolonged biting, require that muscles be capable of sustained force production. The feeding behavior of Ceratophrys suggests that their jaw-adductor muscles may be capable of powering sustained bites for long periods. We examined the capacity for sustained bite force by conducting an in situ experiment during which we measured bite force while bilaterally and supramaximally stimulating the jaw-adductor muscles of euthanized Cranwell's horned frogs (C. cranwelli). Muscles were stimulated for at least 60 min with a series of tetanic trains, with one experiment lasting over 6 h. We found that a significant sustained force develops during the first few minutes of the experiment, and this force is present between tetanic trains when the muscles are not being stimulated. The sustained force persists long after tetanic forces are barely detectable. The observed sustained force phenomenon parallels that observed for the jaw-adductor muscles of alligator lizards (Elgaria), another animal capable of sustained biting. The ability to bite with sustained and significant force by C. cranwelli may be facilitated by a configuration of different muscle fiber types, such as slow tonic fibers, as well as specializations in the muscle fibers that mitigate the effects of fatigue.

Impacts of pulse conditions on endurance behavior of ferroelectric thin-film transistor non-volatile memory

In this work, the ferroelectric thin-film transistor (Fe-TFT) with polycrystalline-silicon (poly-Si) channel and HfZrO x gate dielectric is fabricated to study the characteristics of non-volatile memory (NVM). Significant threshold voltage (V TH) modulation can be achieved with low pulse voltages less than ±3.5 V and pulse widths within 1 μs. In order to achieve the NVM characteristics of low voltage and high speed operation, the impact of the program/erase (PRG/ERS) pulse voltage (V PRG/V ERS) and pulse width on endurance is a critical consideration. In the study of the pulse width effect on endurance, it can be observed that the V TH in PRG-state exhibits the wake-up effect at both short and long pulse widths. In addition, with the increase of pulse width, the V TH in the PRG-state exhibits significant fatigue effect and subthreshold swing (SS) degradation effect. For V TH in the ERS-state, the increase of the pulse width also exhibits the fatigue effect and the SS degradation effect, which is dominated by the SS degradation effect at long pulse widths. In the study of the pulse voltage effect on endurance, the increase of V PRG shows the imprint effect that the V TH in either PRG- or ERS-state reveals a decreasing trend. When the V ERS increases, the SS of the PRG- and ERS-states is degraded, and the fatigue effect of the PRG-state is enhanced. Moreover, the retention characteristics of poly-Si Fe-TFTs exhibit stable characteristics at both room temperature and 50 °C.

Aquatic Animal Models for Studies in Regenerative Medicine.

Shimizu, Y., Kawasaki, T. Stab wound injury model of the adult optic tectum using zebrafish and medaka for the comparative analysis of regenerative capacity. Journal of Visualized Experiments. (180), e63166 (2022). Burris, B., Jensen, N., Mokalled, M. H. Assessment of swim endurance and swim behavior in adult zebrafish. Journal of Visualized Experiments. (177), e63240 (2021). El-Daher, F. et al. Controlled semi-automated laser-induced injuries for studying spinal cord regeneration in zebrafish larvae. Journal of Visualized Experiments. (177), e63259 (2021). Slater, P. G., Larraín, J. Spinal cord transection in xenopus laevis tadpoles. Journal of Visualized Experiments. (178), e63276 (2021).

Functional and Behavioral Trade-Offs between Terrestrial and Aquatic Locomotion in the Amphibious Fish Kryptolebias marmoratus.

The mangrove rivulus (Kryptolebias marmoratus) is a phenotypically plastic teleost fish that can spend considerable time on land and traverse the terrestrial realm through a behavior termed the tail-flip jump. The tail-flip jump is a transitional stage between fully aquatic and terrestrial lifestyles. Therefore, understanding this behavior can provide insight into how organisms adapt to new environments over evolutionary time. Studies of K. marmoratus show that terrestrial acclimation and exercise improve tail-flip jumping performance due to muscle remodeling, but the implications of these muscular changes on aquatic locomotion are unknown. In the present study, we hypothesized that (1) terrestrial acclimation and exercise lead to physiological changes, such as changes to muscle fiber type, muscle mass distribution, or body shape, that optimize tail-flip jump distance and endurance while negatively impacting swimming performance in K. marmoratus, and (2) plasticity of the brain (which has been demonstrated in response to a variety of stimuli in K. marmoratus) allows terrestrial emersion and exercise to cause behavioral changes that promote survival and long-term reproductive success. To test these hypotheses, we measured the critical swimming speed (Ucrit), tail-flip jump distance, terrestrial endurance, and undisturbed aquatic behavior of age- and size-matched K. marmoratus before and after a terrestrial exercise period. This period consisted of six 3-min exercise sessions spread over 12 days, during which the fish were prompted to jump continuously. To isolate the effects of air exposure, a separate group was exposed to air for an equivalent period but not allowed to jump. Air exposure improved maximum jump distance but negatively affected swimming performance (Ucrit). Terrestrial endurance (number of jumps) improved in the exercised group, but Ucrit showed no significant change. Contrary to our first hypothesis, a trade-off exists between jump distance and Ucrit but not between jump endurance and Ucrit. Exercised individuals were more active following exercise, resulting either from the onset of dispersion behavior or a heightened stress response.

Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

In this work, hafnium zirconium oxide (HZO)-based 100 × 100 nm2 ferroelectric tunnel junction (FTJ) devices were implemented on a 300 mm wafer platform, using a baseline 65 nm CMOS process technology. FTJs consisting of TiN/HZO/TiN were integrated in between metal 1 (M1) and via 1 (V1) layers. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy analysis confirmed the targeted thickness and composition of the FTJ film stack, while grazing incidence, in-plane x-ray diffraction analysis demonstrated the presence of orthorhombic phase Pca21 responsible for ferroelectric polarization observed in HZO films. Current measurement, as a function of voltage for both up- and down-polarization states, yielded a tunneling electroresistance (TER) ratio of 2.28. The device TER ratio and endurance behavior were further optimized by insertion of thin Al2O3 tunnel barrier layer between the bottom electrode (TiN) and ferroelectric switching layer (HZO) by tuning the band offset between HZO and TiN, facilitating on-state tunneling conduction and creating an additional barrier layer in off-state current conduction path. Investigation of current transport mechanism showed that the current in these FTJ devices is dominated by direct tunneling at low electric field (E &amp;lt; 0.4 MV/cm) and by Fowler–Nordheim (F–N) tunneling at high electric field (E &amp;gt; 0.4 MV/cm). The modified FTJ device stack (TiN/Al2O3/HZO/TiN) demonstrated an enhanced TER ratio of ∼5 (2.2× improvement) and endurance up to 106 switching cycles. Write voltage and pulse width dependent trade-off characteristics between TER ratio and maximum endurance cycles (Nc) were established that enabled optimal balance of FTJ switching metrics. The FTJ memory cells also showed multi-level-cell characteristics, i.e., 2 bits/cell storage capability. Based on full 300 mm wafer statistics, a switching yield of &amp;gt;80% was achieved for fabricated FTJ devices demonstrating robustness of fabrication and programming approach used for FTJ performance optimization. The realization of CMOS-compatible nanoscale FTJ devices on 300 mm wafer platform demonstrates the promising potential of high-volume large-scale industrial implementation of FTJ devices for various nonvolatile memory applications.