Bismuth sulfide based resistive switching device as the key to advanced logic gate fabrication

Abstract

A memristor is a two-terminal electrical component with the scope of future computing applications and analog electronics. In this report, bismuth sulfide decorated one-dimensional carbon nitride nanotube was synthesized and characterized with various analytical techniques. The electrical property of the synthesized material was measured using a two-terminal metal–insulator–metal type of device that exhibited the resistive switching characteristics with the ON to OFF ratio of 2 × 103. The electron transport mechanism of the device was followed by Schottky emission and Poole–Frenkel emission for a low conductance state and Ohmic conduction behavior at the high conductance state. A decrease in the trap depth was identified in the simulation study with increasing applied potential and that supported the proposed mechanism. Read endurance and retention behavior of the device are stable in nature, supported by the statistical analysis. Furthermore, a hybrid logic gate was designed using two identical memristors, one CMOS inverter, one resistor, one voltage divider, and a buffer gate. The designed logic gate exhibited stable nand and nor gate operation based on the control signal.