Ag-Al paste is a key material of n-type silicon-based solar cells. The uneven Ag/Al spike on the transmitter surface after metallization is easy to cause local short circuit, which is a bottleneck that limits its application. The glass play an indispensable role in the surface metallization of the emitter. The influence of high temperature wettability and thermal properties of glass on the metallization of p+ emitter was studied from the point of view of ionic radius by adjusting the ratio of Al/Ga. The results indicated that when the Al/Ga ratio is 2:3, an abundance of free oxygen improved the O/Si ratio within the glass network structure, facilitating the depolymerization of siloxane anion clusters into simpler structural units in the silicate network structure. Al ions preferentially combine with free oxygen to formed [AlO4]. The entrapment of free oxygen by [BO3] units tended to form more [BO4] units with increased thermal stability. The glass sample demonstrated minimal difference between left and right contact angles. The glass wet the Si wafer steadily and evenly throughout the melting process. The formation of a continuous dense glass layer increased the contacts between the metal electrode and the emitter. Not only a mass of silver crystals were deposited on the emitter surface, but also small and dense Ag/Al spikes were distributed. Excellent metallization contacts were formed with the p+ emitter, which improved the solar cell's photoelectric conversion efficiency.
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