Abstract Metal-insulator-semiconductor (MIS) heterostructures have important applications in vacuum microelectronic devices. Among these, graphene-insulator-semiconductor (GIS) heterostructure field electron emitters are among the most widely utilized. Improving the electron emission performance is a major challenge for GIS heterostructure field emitters. A comprehensive theoretical model is needed to predict the electron emission process from such a structure. In this work, a theoretical calculation was carried out on the electron emission current from an GIS heterostructure structure based on a tunneling model that considers the density of states of the semiconductor, scattering of the insulation layer, and hot-hole-induced Auger emission process. Using graphene/h-BN/MoS2 as an example, we obtain the band structure of the MoS2 using first principle calculation, simulate the scattering in h-BN with the Monte Carlo method, and calculate the emission current density using the modified Fowler-Nordheim equation. The results indicate that h-BN thickness and Auger coefficient are key factor affecting emission current density and emission efficiency. To validate our model, a few-layer graphene/h-BN/MoS2 heterostructure device was prepared and the field emission results validate the calculation results. The theoretical model can be expanded to other GIS heterostructures and is useful for designing a high-performance electron source using a GIS tunneling junction.
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