Electro-optic Sampling System Research Articles

Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser

We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveform internal to a GaAs monolithic integrated circuit operating at 2.4GHz.

Electro-optic sampling of fast electrical signals using an InGaAsP injection laser

We demonstrate a new electro-optic sampling system for the measurements of fast electrical waveforms at gigahertz repetition rates. The system uses a mode-locked InGaAsP injection laser as a source of sampling pulses and employs the electro-optic effect in the GaAs substrate of a microstrip line.

Electro-optic sampling with picosecond resolution

The development of an electro-optic sampling system with resolution of better than 2 picoseconds and shot noise limited sensitivity of 11 μV/√Hz is reported. This system has been used to characterise GaAs photodiodes which have exhibited pulsewidths as short as 5.4 picoseconds (full-width-half-maximum).

Picosecond electro-optic sampling system

We report the construction of a sensitive electro-optic sampling system for the measurement of ultrafast electrical transients. This system has a temporal resolution of lessthan 4 ps (over 100- GHz bandwidth), better than 50-μV sensitivity and potential for a temporal resolution reaching the single picosecond. Demonstrated applications are ultrafast photodetector response characterization and time resolved photoconductivity.