Incident Electron Energy Research Articles

Structural modification of MgO/Au thin films by aluminum Co-doping and related studies on secondary electron emission

The secondary electron emission (SEE) has the potential applications in electron multiplication, mass spectrometer, scanning electron microscope, photomultiplier tubes and so on. Among these, the electron multiplier (EM) based on MgO/Au thin film has attracted great attention over the past few years. Here, we design a new kind of MgO thin film by co-doping of gold and aluminum elements based on the structural modification through reactive magnetron sputtering method. The doping of Al into MgO/Au film gives a rise to the maximum SEE coefficient (δmax) between 9.02 and 10.23 while the optimal decay rate is around 10.4 % after 2 h of consistent electron bombardment. Herein, we also improved the stability of the film stored in air by sputtering Al2O3 layer on it. For the sample sputtered with the protecting layer Al2O3, its SEE coefficient (δ) at the incident electron energy of 200 eV still kept at a relatively high level that exceed 4.5 after stored in air for 72 h. The film properties after Al and Au co-doping are investigated in detail by the SEM, AFM, XPS and UV-VIS spectroscopy. Our results provide a new candidate for SEE layer in the application of long lifespan vacuum electron devices.

Decay of secondary electron yield of MgO–Au composite film at different incident electron energies

The relationship between the incident electron energy and secondary electron yield (SEY) decay of MgO–Au composite film was investigated by the designed comparison experiments. Besides the incident current and the properties of the film, the SEY value and the incident electron energy were found to be the other two key factors affecting the SEY decay rate. The value of SEY and the incident electron energy have opposite influences on the SEY decay rate, which makes it necessary to analyze the curve of incident electron energy versus SEY decay rate by dividing it into three parts. In addition, the empirical formulas for SEY decay were derived from experimental data, enabling the estimation of the SEY and decay rate of the MgO–Au composite film at any moment during SEY decay. Furthermore, the cause of SEY decay was also analyzed based on the relationship between incident electron energy and the SEY decay rate. The thermal dissipation, surface roughness, and deposition of contaminants were proven not to be the determinants of SEY decay. The experiment results in this paper supported the inference that the charging effect was the primary cause of SEY decay.

Light-modulated 8-Pmmn borophene-based pure crossed Andreev reflection

Abstract We investigate the off-resonant circularly polarized light-modulated crossed Andreev reflection in an 8-Pmmn borophene-based normal conductor/superconductor/normal conductor junction. When the signs of Fermi energies in two normal regions are opposite, the pure crossed Andreev reflection without the local Andreev reflection and the elastic cotunneling occurs. By using the Dirac-Bogoliubov-de Gennes equation and the Blonder-Tinkham-Klapwijk formula, the pure crossed Andreev reflection conductance and its oscillation as a function of the junction length and the Fermi energy in the superconducting regions are discussed. It is found that the value of pure crossed Andreev reflection conductance peak value and its corresponding value of light-induced gap increase with the increase of incident energy of electron. Furthermore, the valley splitting for the transmitted hole is found due to the presence of tilted velocity of borophene. Our findings are beneficial for designing the high efficiency 8-Pmmn borophene-based nonlocal transistor and nonlocal valley splitter without local and non-entangled processes.

Characterization of brass mesh bolus for electron beam therapy

Purpose. Bolus is often required for targets close to or on skin surface, however, standard bolus on complex surfaces can result in air gaps that compromise dosimetry. Brass mesh boluses (RPD, Inc., Albertville, MN) are designed to conform to the patient's surface and reduce air gaps. While they have been well characterized for their use with photons, minimal characterization exists in literature for their use with electrons.Methods and materials.Dosimetric characteristics of brass mesh bolus was investigated for use with 6, 9 and 12 MeV electrons using a 10×10 cm2applicator on standard multi-energy LINAC. Measurements for bolus equivalence and percentage depth doses (PDDs) under brass mesh, as well as surface dose measurements were performed on solid water and a 3D printed resin breast phantom (Anycubic Photon MonoX, Shenzhen, China) using Markus®parallel-plate ionization chamber (Model 34045, PTW Freiburg, Germany), thermoluminescent detectors (TLD) and EBRT film. After obtaining surface dose measurements, these were compared to dose calculated on the Pinnacle3 treatment planning system (TPS, 16.2, Koninklijke Philips N.V.).Results. Measurements of surface dose under brass mesh showed consistently higher dose than without bolus, confirming that brass mesh can increase the PDD at surface up to ∼ 94% of dose at dmax, depending on incident electron energy. This increase is equivalent to using ∼ 7.2 mm water equivalent bolus for 6 MeV, ∼ 3.6 mm for 9 MeV and ∼ 2.2 mm bolus for 12 MeV electrons. TPS results showed close agreement within-vivomeasurements, confirming the potential for brass mesh as bolus for electron irradiation, provided blousing effect is correctly modelled.Conclusions. To increase electron surface dose, a brass mesh can be used with equivalent effect of water-density bolus varying with electron energy. Proper implementation could allow for ease of treatment, as well as increase bolus conformality in electron-only plans.

Andreev reflection in topological nodal-line semimetals superconductor junction

Abstract Andreev reflection is an important quantum tunneling phenomenon in the conductor-superconductor junction. The Andreev reflection coefficients TAR of a hybrid system with s-wave superconductor connected by topological nodal-line semimetals (TNLSMs-SC junction system) is calculated theoretically by using the Landauer-Büttiker formula combined with the nonequilibrium Green’s function method. The results show that when the direction of the boundary state electron and the incident electron are the same, only the bulk states of the TNLSMs involve the Andreev reflection of the hybrid system, and the Andreev reflection coefficients TAR enhance with the increase of the Fermi energy EF . We also study the effect of on-site energy µz and mass term m on the Andreev reflection and find that the Andreev reflection in the system decreases rapidly with the increase of on-site energy µz and mass term m. Moreover, we find that only in the presence of a mass term m, the Andreev reflection coefficients TAR of the system changes with the rise of the Fermi energy EF . When a perpendicular magnetic field is applied in the system, the Andreev reflection coefficients TARin the superconducting gap will appear a series of oscillating peaks. For a hybrid system with the large perpendicular magnetic field applied, we find that the maximum Andreev reflection coefficients TAR=7.2 at the Fermi energy EF = 0.0 and the incident electron energy E = ±0.1. The Andreev reflection coefficients TAR is gradually enhanced in the superconducting gap (incident energy |E| ≤ 0.2) when a disorder is applied to the superconductor region of the system. However, the symmetry of the Andreev reflection coefficients TARis broken when the perpendicular magnetic field is applied to the system. These peculiar transport properties of the TNLSMs-SC junction system are expected to provide theoretical guidance for future applications.

Effects of sputtering pressure on microstructure and secondary electron emission properties of AlN film prepared by magnetron sputtering

In this paper, aluminum nitride (AlN) thin films were prepared by reactive radio-frequency magnetron sputtering at different sputtering pressures and the crystalline structure, surface morphology and secondary electron emission (SEE) properties of the AlN films were studied in detail. The experimental results reveal that AlN films present the preferred orientation of a-axis (100), and the grain size and surface roughness of the film decrease with the increase of sputtering pressure. Additionally, the SEE coefficient of the film reaches a maximum of 4.3 at 200 eV when the sputtering pressure is 0.55 Pa and is relatively stable under the continuous bombardment of an incident electron with the energy of 200 eV. Thus, the AlN thin film prepared under the optimized sputtering pressure has a relatively high and stable coefficient at a low incident electron energy, which promotes its potential application in the high-gain and long-life electron multipliers.

Electron impact excitation of bismuth

Abstract The present study investigates the electron impact excitation of bismuth from the ground state 6p3 4S3/2 to the excited state 6p27s 4P1/2. Motivated by the latest measurements by Marinković et al [J. Phys. B, 49 23 520 (2016)], relativistic distorted wave calculations are performed to obtain the differential and integrated cross sections for incident electron energies at 10, 20, 40, 60, 80, and 100 eVs. These results are compared with the available experimental data and a good agreement is observed. Our results represent the first theoretical work to provide such a comparison. Additionally, we report the generalized oscillator strengths derived from our calculated differential cross sections.

Single electron charge spectra of 8-inch high-collection-efficiency MCP-PMTs

The microchannel plates (MCP) can serve as the electron amplifier of the photomultiplier tubes (PMT). The collection efficiency of the newly developed 8-inch MCP-PMT for the Jinping Neutrino Experiment is maximized thanks to the high-secondary-emission coating. The resulting single electron response (SER) charge distribution deviates from the Gaussian distribution in large charge regions. To understand the nature of the jumbo-charged SER, we designed a voltage-division experiment to quantify the dependence of the MCP gain on the energy of incident electrons. Combining the relationship with the Furman probabilistic model, we reproduced the SER charge spectra by introducing an additional amplification stage on the input electrode of the first MCP. Our results favor a Gamma-Tweedie mixture to describe the SER charge spectra of the MCP-PMTs.

Electron Energy-Loss Spectroscopy Method for Thin-Film Thickness Calculations with a Low Incident Energy Electron Beam

In this study, the thickness of a thin film (tc) at a low primary electron energy of less than or equal to 10 keV was calculated using electron energy-loss spectroscopy. This method uses the ratio of the intensity of the transmitted background spectrum to the intensity of the transmission electrons with zero-loss energy (elastic) in the presence of an accurate average inelastic free path length (λ). The Monte Carlo model was used to simulate the interaction between the electron beam and the tested thin films. The total background of the transmitted electrons is considered to be the electron transmitting the film with an energy above 50 eV to eliminate the effect of the secondary electrons. The method was used at low primary electron energy to measure the thickness (t) of C, Si, Cr, Cu, Ag, and Au films below 12 nm. For the C and Si films, the accuracy of the thickness calculation increased as the energy of the primary electrons and thickness of the film increased. However, for heavy elements, the accuracy of the film thickness calculations increased as the primary electron energy increased and the film thickness decreased. High accuracy (with 2% uncertainty) in the measurement of C and Si thin films was observed at large thicknesses and 10 keV, where tλ≈1. However, in the case of heavy-element films, the highest accuracy (with an uncertainty below 8%) was found for thin thicknesses and 10 keV, where tλ≤0.29. The present results show that an accurate film thickness measurement can be obtained at primary electron energy equal to or less than 10 keV and a ratio of tλ≤2. This method demonstrates the potential of low-loss electron energy-loss spectroscopy in transmission electron microscopy as a fast and straightforward method for determining the thin-film thickness of the material under investigation at low primary electron energies.

Relativistic calculations of energy levels, lifetimes, transition parameters, and electron impact excitation cross sections for Kr XIX

In this study, we present a detailed analysis of atomic properties for Kr XIX, specifically focusing on the lowest 128 fine-structure levels originating from the 3s23p6, 3s23p53d, 3s3p63d and 3s23p43d2 configurations. We report energy levels, lifetimes, wavelengths, weighted oscillator strengths, and transition probabilities for multipole transition types (E1, E2, M1, and M2). To achieve this, we employed the GRASP2018 code, which implements the fully relativistic multiconfigurational Dirac–Hartree–Fock method and accounts for Breit interaction and quantum electrodynamic effects. We performed another set of calculations using the many-body perturbation theory implemented in the flexible atomic code (FAC). By comparing the results obtained from GRASP2018 and FAC, we established the accuracy and consistency of our calculations. Furthermore, using the relativistic distorted wave theory, we studied electron impact excitation of all transitions to upper levels from the ground and metastable levels and reported excitation cross sections for incident electron energies up to 5 keV. To enhance the practical utility of our findings, we also provided analytical fittings of these cross sections and excitation rate coefficients for their applications in plasma modeling. This work contributes to the atomic properties and excitation cross sections of Kr XIX, addressing a marked gap in the available atomic data.

Resonant electron capture by polycyclic aromatic hydrocarbon molecules: Effects of aza-substitution.

Resonant electron capture by aza and diaza derivatives of phenanthrene (7,8-benzoquinoline and 1,10-phenanthroline) and anthracene (acridine and phenazine) at incident free electron energies (Ee) in the range of 0-15eV was studied. All compounds except 7,8-benzoquinoline form long-lived molecular ions (M-) at thermal electron energies (Ee ∼ 0eV). Acridine and phenazine also form such ions at epithermal electron energies up to Ee = 1.5-2.5eV. The lifetimes (τa) of M- with respect to electron autodetachment are proportional to the extent of aza-substitution and increase on going from molecules with bent geometry of the fused rings (azaphenanthrenes) to linear isomers (azaanthracenes). These regularities are due to an increase in the adiabatic electron affinities (EAa) of the molecules. The EAa values of the molecules under study were comprehensively assessed based on a comparative analysis of the measured τa values using the Rice-Ramsperger-Kassel-Marcus theory, the electronic structure analysis using the molecular orbital approach, as well as the density functional calculations of the total energy differences between the molecules and anions. The only fragmentation channel of M- ions from the compounds studied is abstraction of hydrogen atoms. When studying [M-H]- ions, electron autodetachment processes were observed, the τa values were measured, and the appearance energies were determined. A comparative analysis of the gas-phase acidity of the molecules and the EAa values of the [M-H]· radicals revealed their proportionality to the EAa values of the parent molecules.

Benchmarking calculations of level energies, transition parameters and electron impact excitation cross sections of S-like Xe38+

Atomic structure parameters for levels corresponding to 2s22p63s23p4, 2s22p63s3p5, 2s22p63s23p23d2, 2s22p63s3p43d and 2s22p63s23p33d configurations of S-like Xe38+ are calculated using the fully relativistic multiconfiguration Dirac-Hatree-Fock (MCDHF) method followed by the subsequent relativistic configuration interaction (RCI) calculations. The parameters evaluated include energies of the lowest 75 levels and E1, M1, E2, and M2 transition parameters among these levels. The effect of the choice of virtual orbitals for generating the wavefunctions is discussed. The accuracy of our line strengths is established through the rigorous calculations of their associated uncertainties using three different methods. Another set of calculations using the many-body perturbation theory (MBPT) to validate the present MCDHF-RCI energies is carried out. Further, the electron impact excitation cross-sections using the relativistic distorted wave (RDW) theory are determined for all transitions from the ground and metastable states in the incident electron energy range from the excitation threshold to 10 keV. For plasma physics applications, the fitting parameters for these cross sections employing two distinct equations tailored for low and high-energy regimes are reported. Moreover, the rate coefficients are determined in the electron temperatures range of 15 eV to 100 eV by taking into account the Maxwellian electron energy distribution function and our computed cross-sections. In addition to addressing the atomic data gap in highly charged Xe ions, the present results are of good accuracy and can serve as benchmark tests for other theoretical evaluations. Moreover, they can also assist in line identification of the complex spectra of highly charged sulphur-like xenon ions.

Optical properties of InSb derived from reflection electron energy loss spectroscopy spectrum

The energy loss function (ELF) of the narrow bandgap semiconductor, InSb, was derived from the reflection electron energy loss spectroscopy (REELS) spectrum measured at 4 keV incident electron energy in an energy loss range of 1.6–200 eV using a high energy resolution electron spectrometer. The experimental spectrum was analyzed with the reverse Monte Carlo (RMC) method, which integrates the classical trajectory Monte Carlo simulation with the simulated annealing method for optimizing the trial ELF. Subsequently, the complex dielectric function ε(ω), refractive index and extinction coefficient were determined from the obtained ELF in the energy loss (i.e. photon energy) range of 1.6–200 eV. The validity of the obtained data was verified by the f-sum rule, ps-sum rule, inertial sum rule and dc-conductivity sum rule. We found that our calculated data of InSb fulfill the sum rules with very high accuracy; therefore, the use of these calculated optical data in material science and surface analysis is highly recommended for further applications.

New Data on Autoionizing States of Ne Induced by Low-Energy Electrons from 45 to 64 eV

The lowest single and doubly excited autoionizing states of neon have been studied using a non-monochromatic electron beam and a high-resolution electrostatic analyzer at incident electron energies from 43.37 to 202 (±0.4) eV at three ejection angles, 40°, 90° and 130°. The 2s2p63s(3,1S) and 2s2p63p(3,1P) as well as the 2p43s3p doubly excited states have been observed and their energy determined. The influence of the PCI effect in the energy region of the 2s2p63s(3,1S) states has been investigated. New features in the ejected electron spectra in the low kinetic energy region 3–20 eV at 202 eV incident energy have been observed and assigned.

Fully relativistic distorted wave calculations of electron impact excitation of gallium atom: Cross sections relevant for plasma kinetic modeling

Electron impact excitation cross sections of neutral Ga are calculated using the relativistic distorted wave approximation with the aid of multiconfigurational Dirac-Fock wavefunctions. The cross sections are calculated from the fine structure resolved levels of the 4s24p manifold, i.e., from the ground 2P1/2 and the first excited state 2P3/2, to the fine structure resolved levels of the manifolds 4s24pdf, 4s4p2(4P1/2,4P3/2, and 4P5/2), 4s25spdf, 4s26spdf, 4s27spdf, and 4s28spdf for incident electron energies ranging from threshold to 500 eV. Where available, a comparison of the calculated oscillator strengths, transition probabilities, and cross sections with the previously reported results has been performed. The cross sections for the excitation from 4s24p2P1/2 to 4s24f, 4s4p2(4P1/2,4P3/2, and 4P5/2), 4s25f, 4s26f, 4s27df, and 4s28spdf and all the excitation cross sections from 4s24p2P3/2 are calculated and reported for the first time for a wide range of electron energies. Furthermore, the rate coefficients are also calculated using the present cross sections for an electron temperature varying from 0.5 to 5 eV. An analytic fitting of the calculated rate coefficients is provided to facilitate their inclusion in various plasma kinetic models.

Electron transport characteristics in water under electrostrictive effect

The transport characteristics of electrons are crucial for the initiation and development of pulse discharge in water. In this work, we develop a physical model of electron transport that consides elastic and inelastic collision cross sections. The purpose of this study is to investigate frequency variations of elastic collisions, ionization and excitation collisions with different initial electron energy values, and to explore the characteristic of electron energy loss in water. The Monte Carlo method is employed to track structure characteristics of electron transmission and scattering under varying energy values. The results show that the electrons of lower energy (~20 eV) are significantly impacted by the water molecule scattering, hence their transmission capacities are weakened. When the incident energy of electron reaches 100 eV, the scattering deviation distance is roughly equivalent to the transmission depth, about 6–8 nm, and the maximum deviation angle <i>θ</i><sub>shift</sub> ~ 60°. When the electron incident energy is in a range of 10–1000 eV, the number of elastic collisions is much greater than the number of excitation and ionization collisions, and the number of ionization collisions and excitation collisions increases significantly with the increase of electron energy. The higher the electron incident energy, the greater the energy loss is. However, the energy loss decreases sharply with the extension of penetration distance. For the ionization collision, the average ionization energy loss, <i>W</i>, decreases rapidly with the increase of electron energy, and ultimately maintains at a level of 20–30 eV, which is consistent with the experimental results reported.

Fast computation approach of electron-impact ionization and excitation cross-sections for atoms and ions with medium- and high-<i>Z</i> elements

The atomic data of medium- and high-<i>Z</i> elements, such as electron-impact ionization and excitation cross-sections, possess extensive applications in fields such as fusion science and X-ray interactions with matter. There are atoms and ions in high energy density plasma, with different charge states and energy states ranging from ground states to highly excited states, and the cross-sections of each charge state and energy state need to be calculated. The bottlenecks limiting computational performance are the inevitable relativistic effects of medium- and high-<i>Z</i> elements and the extremely complex electronic configurations. Taking tantalum (Ta) for example, by using the relativistic Dirac-Fock theory and distorted wave model, we compute the electron-impact ionization and excitation cross-sections of Ta from the ground state atom up to Ta<sup>72+</sup> with the incident electron energy range of 1–150 keV. The detailed configuration accounting (DCA) reaction channel cross-sections are derived by summing and weighting the original detailed level accounting (DLA) cross-sections. After examining the data, two regularities are found. In terms of DLA, the pre-averaging DCA cross-sections have varying initial DLA energy levels but are typically close to each other. There is not a straightforward function that can explain the discrepancies between them. In terms of DCA, inner subshells typically contribute very little to the total cross-section as their ionization and excitation cross-sections are orders of magnitude smaller than those of outer subshells. We provide two techniques to reduce the computational costs based on the regularities. To minimize the total number of DLA reaction channels used in the computation, the initial DLA energy levels can be randomly sampled. Through a Monte Carlo numerical experiment, we determine the appropriate number of sampling points that can reduce the total number of DLA channels by an order of magnitude while maintaining a 5% error margin. In terms of impact ionization, since small cross-section DCA channels are insignificant, only a tiny portion of the DCA channels are required to preserve a 95% accuracy of the entire cross-section. It is possible to use the analytical Binary Encounter Bethe (BEB) formula to determine which DCA channels should be neglected before the computation to reduce computational costs. In terms of electron-impact excitation, just the cross-sections of the same excited subshells as the preserved ionized subshells, which are determined in the previous electron-impact ionization (EII) calculations, are needed. Finally, we compare our EII results with theoretical and experimental results. In the low incident electron energy range of below 2 keV, our results accord with the theoretical result of the 6s EII cross-section of the Ta atom and the experimental result of the total EII cross-section of the Ta<sup>1+</sup> ion. In the high energy range of below 150 keV, our results are also consistent with the theoretical result of the 1s EII cross-section of the Ta atom and the experimental result of the 1s EII cross-section of the Cu atom. Our results reasonably match the previous experimental and theoretical results in low-energy range and high-energy range, inner subshell and outer subshell, indicating the accuracy of our calculation. The proposed optimizing strategy can be applied to various medium- to high-<i>Z</i> elements and is compatible to most computation codes.

Electron-driven molecular processes for cyanopolyacetylenes HC2n+1N (n = 3, 4, and 5).

Linear carbon series cyanopolyacetylenes (HC2n+1N) (n = 3, 4, and 5) are astromolecules found in the atmosphere of Titan and interstellar media such as TMC-1 (Taurus molecular cloud-1). All these compounds are also detected in IRC + 10 216. In the present work, we comprehensively investigate electron interaction with important cyanopolyacetylene compounds, viz. HC7N (cyano-tri-acetylene), HC9N (cyano-tetra-acetylene), and HC11N (cyano-penta-acetylene). The study covers incident electron energies ranging from the ionization threshold to 5 keV. Various electron-driven molecular processes are quantified in terms of total cross-sections. The quantum spherical complex optical potential (SCOP) is used to determine elastic (Qel) and inelastic (Qinel) cross-sections. Ionization is the most important inelastic effect that opens various chemical pathways for the generation of different molecular species; we computed the ionization cross-section (Qion) and discrete electronic excitation cross-section (ΣQexc) using the complex scattering potential-ionization contribution (CSP-ic) method. The cyanopolyacetylene compounds are difficult to handle experimentally owing to the health risks involved. Therefore, there are no prior experimental data available for these molecules; only Qion have been reported theoretically. Thus, the present work is the maiden report on computing Qel, Qinel, ΣQexc, and QT. In order to provide an alternative approach and further validation of the present work, we employed our recently developed two-parameter semi-empirical method (2p-SEM) to compute Qel and QT. Additionally, we predict the polarizability of the HC11N molecule, which has not been reported in the existing literature. This prediction is based on a correlation study of polarizabilities of molecules with Qion values from the same series of molecules.

Generalized oscillator strengths and integral cross sections of krypton studied by high-energy electron scattering

Absolute generalized oscillator strengths of the valence-shell excitations of krypton have been determined with an incident electron energy of 1500 eV and an energy resolution of about 80 meV. By employing the relative flow technique with a dilute target, the pressure effect is excluded and the accuracy of the measured generalized oscillator strengths is improved. By comparing the present generalized oscillator strengths with the previous experimental and theoretical results, it is found that the first Born approximation is not reached at the squared momentum transfer larger than 1 a.u.. The optical oscillator strengths have been obtained by extrapolating the measured generalized oscillator strengths to zero squared momentum transfer, which cross-checks the previous electron impact and photoabsorption results. With the aid of the BE-scaling method, the integral cross sections of krypton have been determined from the excitation threshold to 5000 eV. The present oscillator strengths and integral cross sections supplement the fundamental database of the electron scattering of krypton and provide a benchmark for the theoretical methods.

Electron impact single ionization TDCS of H2O at 81 eV for coplanar asymmetric emission of electrons

We report the results of triple differential cross section (TDCS) for the electron impact single ionization of water molecules at incident electron energy 81 eV for coplanar asymmetric emission of electrons. The TDCS results have been obtained in distorted wave second Born approximation using orientation averaged molecular orbital (OAMO) approximation. The TDCS results have been calculated for the ionization of 1b1 and 3a1 molecular orbital of water molecules for the coplanar asymmetric emission of electrons. The obtained theoretical TDCSs are compared with the available measurements as well as with the first Born results. The second Born results are found to be significant by improving agreement with the measurements particularly in the binary peak region.