Optical properties of InSb derived from reflection electron energy loss spectroscopy spectrum

Abstract

The energy loss function (ELF) of the narrow bandgap semiconductor, InSb, was derived from the reflection electron energy loss spectroscopy (REELS) spectrum measured at 4 keV incident electron energy in an energy loss range of 1.6–200 eV using a high energy resolution electron spectrometer. The experimental spectrum was analyzed with the reverse Monte Carlo (RMC) method, which integrates the classical trajectory Monte Carlo simulation with the simulated annealing method for optimizing the trial ELF. Subsequently, the complex dielectric function ε(ω), refractive index and extinction coefficient were determined from the obtained ELF in the energy loss (i.e. photon energy) range of 1.6–200 eV. The validity of the obtained data was verified by the f-sum rule, ps-sum rule, inertial sum rule and dc-conductivity sum rule. We found that our calculated data of InSb fulfill the sum rules with very high accuracy; therefore, the use of these calculated optical data in material science and surface analysis is highly recommended for further applications.