Electron Relaxation Time Research Articles

Quantum Carry Research of Q1D – SE on Helium at Charged Substrate

Known in nano-electronic a solid state quantum - size systems motivate they creating using the surface electrons over helium. The quantum carry of quasi-one-dimensional surface electrons (Q1D-SEs) over superfluid helium is considered here. Research performed according to an electron phase diagram in gas phase at conditions far from electron quantum melting. A substrate is dense row of the light-guide segments where the SEs channels are formed over helium in the fiber gaps. The electrostatic model of substrate profile demonstrates modulation of potential in the electric field leading to possibility of the fibers tops charge thereby improving the Q1D-SEs channels quality. The experiments carried out by a low - frequency electron transport method at the temperature from 1.5 K to 0.5 K and the concentrations of electrons were up to 109cm-2. The SE move transverse to channel satisfies conditions of quantization in sense both the temperature and the relaxation time of electron in a system. According to an experiment lower some temperature the SE conductivity is ladder-like. The differential of SE conductivity is peak-like corresponding qualitatively to an electron states density. The distance between peaks accords to the 1D energy spectrums in some approach. Possibility of apply the 1D-SEs quantized energy levels (vibration levels) as quantum bits of quantum computer is considered.

Resonant spin dynamics of 2D electrons with strong Rashba and Zeeman couplings

Two-dimensional (2D) systems enable enhancing and diversifying the spin–orbit coupling of carriers, a key factor for better charge-spin conversion efficiencies in modern spintronic devices. Increasing 2D spin interactions also modifies dynamical spin-dependent properties of 2D materials, enabling to display resonant phenomena. In this work we focus on dynamical properties of the charge-spin conversion and analyze the resonant spin dynamics of 2D electrons upon strong spin–orbit coupling and Zeeman spin splittings, possibly exceeding the inverse relaxation times of electrons. We derive resonant frequencies and relaxation rates from the Bloch kinetic equations and examine how the trajectories of spin susceptibility poles change with variations in spin splittings and the relaxation time, paying special attention to the interplay between competing Rashba and Zeeman effect.

Radiation-Induced Paramagnetic Centers in Meso- and Macroporous Synthetic Opals from EPR and ENDOR Data

The paramagnetic defects and radiation-induced paramagnetic centers (PCs) in silica opals can play a crucial role in determining the magnetic and electronic behavior of materials and serve as local probes of their electronic structure. Systematic investigations of paramagnetic defects are essential for advancing both theoretical and practical aspects of material science. A series of silica opal samples with different geometrical parameters were synthesized and radiation-induced PCs were investigated by means of the conventional and pulsed X- and W-band electron paramagnetic resonance, and 1H/2H Mims electron-nuclear double resonance. Two groups of PCs were distinguished based on their spectroscopic parameters, electron relaxation characteristics, temperature and time stability, localization relative to the surface of silica spheres, and their origin. The obtained data demonstrate that stable radiation-induced E’ PCs can be used as sensitive probes for the hydrogen-containing fillers of the opal pores, for the development of compact radiation monitoring equipment, and for quantum technologies.

Enhanced near-field radiative heat transfer between borophene sheets on different substrates

Abstract Near-field radiative heat transfer (NFRHT) has the potential to exceed the blackbody limit by several orders of magnitude, offering significant opportunities for energy harvesting. In this study, we have examined the NFRHT between two borophene sheets through the calculation of heat transfer coefficient (HTC). Due to the tunneling of evanescent waves, borophene sheet allows for enhanced heat flux and adjustable NFRHT by varying its electron density and electron relaxation time. Additionally, the near field coupling is further examined when the borophene is deposited on dielectric or lossy substrates. The maximum HTC is closely related to the real part of the dielectric substrate. As a case study, the HTC on the lossy substrate of MoO3, ZnSe and SiC are calculated for comparison. Our results indicate that MoO3 is the optimal substrate to get the enhanced energy transfer coefficient. It results in a remarkable value of 1737 times higher than the blackbody limit owing to the enhanced photon tunneling probability. Thus, our study reveals the effect of substrate on the HTC between borophene sheets and provides a theoretical guidance for the design of near-field thermal radiation devices.

Simultaneous Probing of Electron Density and Temperature Dynamics Inside Air Plasma with Intense Terahertz Pulses

AbstractAir plasma induced by ultrafast laser pulses is an extraordinary source of electromagnetic waves, emitting microwave, terahertz (THz) radiation, and cavityless lasing in the near‐infrared and visible ranges. The temporal dynamics of the electron density have been revealed by optical pump‐probe techniques, while the evolution of the electron temperature remains elusive due to a lack of suitable methods. Here, it is demonstrated that the intense THz‐field‐enhanced fluorescence emission from the excited molecules of nitrogen is a novel tool that allows to explore the complex dynamics of the plasma density and electron temperature simultaneously. Two relaxation times of electrons in air plasma are observed and interpreted as a competition between the excitation of a triplet state by laser or THz‐field‐heated electrons and the dissociative recombination of nitrogen molecular ions. Based on the theoretical simulations, the tens of picoseconds relaxation process is attributed to the ultrafast temperature decrease, while the longer relaxation in the range of hundreds of picoseconds is ascribed to the decay of electron density. The temporal relaxation of both the electron density and temperature revealed by applying an intense THz field provides further insights into the laser‐air plasma interaction and will benefit the engineering of this exceptional source.

Metasurface Absorber for Blood Hemoglobin Concentration.

In this study, a biosensing scenario is developed for monitoring blood quality based on the detection of blood hemoglobin concentration. The procedure involves considering the blood sample as the dielectric with different refractive indexes for different concentrations of hemoglobin. Usually, the sensitivity to design parameters is the major issue with the metasurface-based detection. To address this issue, a three-layer graphene-based wave absorber is designed and modeled using passive circuit elements. The major idea behind this work is to maximize the device sensitivity against the blood sample. The research methodology involves impedance matching between the device and the surrounding environment, while full-wave simulation is also performed and compared to ensure circuit view accuracy. The findings suggest that the proposed graphene-based absorber can efficiently monitor blood quality via dual absorption peaks. The simulation results extracted from impedance matching and the full-wave method indicate frequency shifts of the second absorption peak. These shift values are interpreted based on hemoglobin concentration. Additionally, ample analyses are provided to show the reliability of the proposed absorber against geometrical aspects, incident angle, external stimulation, and the graphene electron relaxation time.

Light funneling into localized acoustic graphene plasmons for extreme infrared and terahertz field enhancement and confinement

Enhancing light-matter interaction through deep subwavelength-scale confinement is crucial for numerous applications like molecular sensing, optoelectronic devices, and non-linear optics. Here, we report the excitation of localized acoustic graphene plasmons (LAGPs) confined in a sub-micro- wide, nanometer-thick layer using a metal slit antenna. This approach enables light funneling in the infrared and terahertz regimes, leading to strong field enhancement and confinement. LAGPs exhibit broad-band excitation characteristics, with the number of excited modes adjustable via the symmetry of the relative positioning between graphene and the metal slit. Detailed analysis indicates that the local field intensities of LAGPs are critically influenced by both the periodicity of the device structure and the electron relaxation time of graphene. These findings are effectively elucidated using temporal coupled mode theory. In comparison to conventional non-localized acoustic graphene plasmons, LAGPs demonstrate significantly improved field confinement and enhancement attributed to the funneling effect. Our study presents a promising avenue for achieving robust light-matter interaction and holds potential for various applications in the infrared and terahertz domains.

Supported Au single atoms and nanoparticles on MoS2 for highly selective CO2-to-CH3COOH photoreduction

Effectively controlling the selective conversion of CO2 photoreduction to C2 products presents a significant challenge. Here, we develop a heterojunction photocatalyst by controllably implanting Au nanoparticles and single atoms into unsaturated Mo atoms of edge-rich MoS2, denoted as Aun/Au1-CMS. Photoreduction of CO2 results in the production of CH3COOH with a selectivity of 86.4%, which represents a 6.4-fold increase compared to samples lacking single atoms, and the overall selectivity for C2 products is 95.1%. Furthermore, the yield of CH3COOH is 22.4 times higher compared to samples containing single atoms and without nanoparticles. Optical experiments demonstrate that the single atoms domains can effectively capture photoexcited electrons by the Au nanoparticles, or the local electric field generated by the nanoparticles promotes the transfer of photogenerated electrons in MoS2 to Au single atoms, prolonging the relaxation time of photogenerated electrons. Mechanistic investigations reveal that the orbital coupling of Au5d and Mo4d strengthens the oxygen affinity of Mo and carbon affinity of Au. The hybridized orbitals reduce energy splitting levels of CO molecular orbitals, aiding C–C coupling. Moreover, the Mo−Au dual-site stabilize the crucial oxygen-associated intermediate *CH2CO, thereby enhancing the selectivity towards CH3COOH. The cross-scale heterojunctions provide an effective strategy to simultaneously address the kinetical and thermodynamical limitations of CO2-to-CH3COOH conversion.

Unraveling the electronic properties in SiO2 under ultrafast laser irradiation

First-principles simulations were conducted to explore various electronic properties of crystalline SiO2 (α-quartz) under ultrafast laser irradiation. Employing Density Functional Perturbation Theory and the many-body (GW) approximation, we calculated the impact of thermally excited electrons on the electronic specific heat, electron pressure, effective mass, deformation potential, electron-phonon coupling and electron relaxation time of quartz, covering a wide range of electron temperatures, up to 100,000 K. We show that the electron-phonon relaxation time of highly-excited quartz becomes twice faster compared to low-excited states. The deformation potential, which dictates atomic displacement, has a non-monotonic behavior with a well-pronounced minimum at around 16,000 K (2.7 × 1021 cm−3 of excited electrons) where the bond ionicity of the Si-O starts decreasing followed by a cohesion loss at 35,000 K due to the pressure exerted by the excited electrons on the lattice. Consequently, our calculated data, illustrating the evolution of physical parameters, can facilitate simulations of laser-matter interactions and provide predictive insights into the behavior of quartz under experimental conditions.

Effect of high-temperature annealing on terahertz optoelectronic properties of nitrogen-doped polycrystalline diamond

Nitrogen-doped polycrystalline diamond (N-PCD) is one of the most important carbon-based electronic materials. Here we present a systmatic investigation of the effect of high-temperature annealing (HTA) on basic physical properties of N-PCD wafer grown by microwave plasma-enhanced chemical vapor deposition (MPECVD). The metallographic and optical microscopes, X-ray diffraction,Raman spectroscopy and X-ray photoelectron spectroscopy are applied for the characterization of N-PCD before and after HTA. Particularly, we study the optoelectrnic properties of N-PCD before and after HTA by using terahertz (THz) time-domain spectroscopy. THz transmittance, dynamical and static dielectric constants and optical conductivity for N-PCD are measured. For N-PCD before HTA, we can observe a THz absorption peak induced by weak H-bonds in N-PCD, which was predicted theoretically in 1999. For N-PCD after HTA, we find that the corresponding optical conductivity can be rightly descriped by the Drude-Lorentz formula. Thus, via fitting the experimental results with the theoretical formula, we can determine optically the key electronic parameters of N-PCD after HTA, such as the electron density, the electronic relaxation time and the Lorentz frequency. The temperature dependence of these parameters is examined in the range of 80–300 K. This work demondtrates that HTA is a practical and efficient way in improving the electronic and optoelectronic properties of N-PCD. The results obtained from this research can benefit an in-depth understanding of the effect of HTA on physical properties of N-PCD from a viewpoint of semiconductor physics.

Impact of Magnetism on (e-ph) self-energy and thermalization of hot carriers in 2D half-functionalized GeC-hybrid

The present work delves into the analysis of carrier scattering rates, emphasizing the effective strategy of chemical functionalization for introducing magnetism into two-dimensional, initially non-magnetic materials. Specifically, our investigation focuses on the distinct alterations observed in the electron linewidth within two half-fluorinated configurations, namely GeC-F and F-GeC. Leveraging density functional and many-body perturbation theories, our findings highlight a substantial increase in the linewidth upon inducing ferromagnetism and antiferromagnetism in the GeC hybrid. Additionally, we identify the significant contribution of different phonon modes to the linewidth. The outcomes reveal that the out-of-plane acoustic mode ZA exerts global control over the valence and conduction bands. Moreover, the relaxation time of electrons following sunlight illumination demonstrates that electron thermalization occurs within 1.5fs to 130fs for ferromagnetic GeC-F and within 2.32fs to 42fs for antiferromagnetic F-GeC. This study provides a detailed and accurate description of electron behavior at sub-picosecond timescales, a realm that is experimentally challenging to attain.

A density functional theory study of the structural, mechanical, optoelectronics and thermoelectric properties of InGeX3 (X = F, Cl) perovskites

Structural, electronic, lattice dynamics, optical, elastic, and thermoelectric features of Indium based Perovskite InGeX3 (X = F, Cl) are studied by using WIEN2k code within density functional theory DFT. A level of the Boltzmann transport theory is used to derive electronic transport coefficients together with anticipated electronic relaxation times. These compounds exhibit stability and are cubic with the space group Pm-3m 221, according to the structural analysis. The band structure having the 2.15 eV and 1.29 eV band gap and density of state (DOS) are calculated for electronic characteristics, indicating that both compounds are semiconducting. For the analysis of elastic characteristics, elastic constants, bulk modulus (49.99, 22.69), Poisson’s ratio (0.343, 0.261), anisotropy factor (0.52, 0.59), and Pugh’s ratio (2.87, 1.75) are examined. The ductile nature of the compounds is described by Pugh’s ratio, and the ionic nature can be ascertained by evaluating the Cauchy pressure. In the energy range of 0–10 eV, optical features like reflectivity, optical conductivity, refractive index, extinction coefficient and absorption coefficient are computed. These compounds broad-range absorption in the UV spectrum suggests that they could be good optoelectronic device candidates. The transport feature like Seebeck coefficient, thermal and lattice conductivity, power factor, electrical conductivity, and figure of merit zT (0.99, 0.98) can be calculated against temperature. The chemical potential against an excellent thermoelectric property of InGeX3 (X = F, Cl) have high figure of merit due to high Seebeck and electrical conductivity. These predicted outcomes indicated that both compounds are suitable candidates for thermoelectric applications. Such compounds can replace with other renewable energy sources in thermoelectric devices because of their powerful thermoelectric response.

Unified understanding of the breakdown of thermal mixing dynamic nuclear polarization: The role of temperature and radical concentration

We reveal an interplay between temperature and radical concentration necessary to establish thermal mixing (TM) as an efficient dynamic nuclear polarization (DNP) mechanism. We conducted DNP experiments by hyperpolarizing widely used DNP samples, i.e., sodium pyruvate-1-13C in water/glycerol mixtures at varying nitroxide radical (TEMPOL) concentrations and microwave irradiation frequencies, measuring proton and carbon-13 spin temperatures. Using a cryogen consumption-free prototype-DNP apparatus, we could probe cryogenic temperatures between 1.5 and 6.5 K, i.e., below and above the boiling point of liquid helium. We identify two mechanisms for the breakdown of TM: (i) Anderson type of quantum localization for low radical concentration, or (ii) quantum Zeno localization occurring at high temperature. This observation allowed us to reconcile the recent diverging observations regarding the relevance of TM as a DNP mechanism by proposing a unifying picture and, consequently, to find a trade-off between radical concentration and electron relaxation times, which offers a pathway to improve experimental DNP performance based on TM.

High-throughput thermoelectric materials screening by deep convolutional neural network with fused orbital field matrix and composition descriptors

Thermoelectric materials harvest waste heat and convert it into reusable electricity. Thermoelectrics are also widely used in inverse ways such as refrigerators and cooling electronics. However, most popular and known thermoelectric materials to date were proposed and found by intuition, mostly through experiments. Unfortunately, it is extremely time and resource consuming to synthesize and measure the thermoelectric properties through trial-and-error experiments. Here, we develop a convolutional neural network (CNN) classification model that utilizes the fused orbital field matrix and composition descriptors to screen a large pool of materials to discover new thermoelectric candidates with power factor higher than 10 μW/cm K2. The model used our own data generated by high-throughput density functional theory calculations coupled with ab initio scattering and transport package to obtain electronic transport properties without assuming constant relaxation time of electrons, which ensures more reliable electronic transport properties calculations than previous studies. The classification model was also compared to some traditional machine learning algorithms such as gradient boosting and random forest. We deployed the classification model on 3465 cubic dynamically stable structures with non-zero bandgap screened from Open Quantum Materials Database. We identified many high-performance thermoelectric materials with ZT > 1 or close to 1 across a wide temperature range from 300 to 700 K and for both n- and p-type doping with different doping concentrations. Moreover, our feature importance and maximal information coefficient analysis demonstrates two previously unreported material descriptors, namely, mean melting temperature and low average deviation of electronegativity, that are strongly correlated with power factor and thus provide a new route for quickly screening potential thermoelectrics with high success rate. Our deep CNN model with fused orbital field matrix and composition descriptors is very promising for screening high power factor thermoelectrics from large-scale hypothetical structures.

Enhancement of thermoelectric performance in monolayer AlP3 via Ga and In doping: A first-principles study

Recently, two-dimensional (2D) triphosphides have attracted much attention in the thermoelectric field due to their semiconductor properties and excellent electronic transport properties. In our study, the performances of AlP3, Al0.5Ga0.5P3, and Al0.5In0.5P3 doped monolayers in the thermoelectric transport are studied. First, the dynamic structural stabilities of the three monolayers are verified through phonon dispersion curves. Moreover, all monolayers are indirect band-gap semiconductors, which can be used as thermoelectric materials. The results show that larger electronic relaxation time and carrier mobilities of doped monolayers lead to larger electronic transport parameters and higher dimensionless thermoelectric figure-of-merit (ZT). It is found that after doping via Ga and In, the thermoelectric performances of AlP3 are increased by 1.31–1.79 times. Our findings show that AlP3 and its doped monolayers hold significant promise as thermoelectric materials within the temperature span of 300–700 K and the doping mechanism could significantly improve the thermoelectric properties of 2D structures.

Effect of THz-bandwidth incoherent laser radiation on bulk damage in potassium dihydrogen phosphate crystals

The laser-damage performance characteristics of potassium dihydrogen phosphate (KDP) samples under exposure to a distinctive broadband incoherent laser pulse are investigated. A laser system providing such pulses is intended to explore improved energy-coupling efficiency on the target in direct-drive inertial confinement fusion experiments and provides incoherent bandwidths as large as 10 THz in a nanosecond pulse. A consequence of this bandwidth is very rapid fluctuations in intensity capable of reaching maxima much larger than the average intensity within the pulse. A custom damage-test station has been built to perform measurements with broadband incoherent pulses in order to determine what effect these fast and high-intensity oscillations have on laser damage. A set of experiments under different bandwidth and beam configurations shows the effect to be minimal when probing bulk damage in KDP. Modeling indicates this behavior is supported by long electron-relaxation times compared to the source-field fluctuations, following excitation of individual electrons in the conduction band. The results help better understand the laser-induced–damage mechanisms in KDP, and its ability to operate in broadband temporally incoherent high-energy lasers that may be particularly suitable for future laser-fusion energy systems.

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics.

High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240-600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

Carrier transport in bulk and two-dimensional Zn2(V,Nb,Ta)N3 ternary nitrides.

Density functional theory-based simulations are applied to study the electronic structures, carrier masses, carrier mobility and carrier relaxation times in bulk and two-dimensional (2D) Zn2(V,Nb,Ta)N3 ternary nitrides. Bulk Zn2(V,Nb,Ta)N3 possess moderate band gap sizes of 2.17 eV, 3.11 eV, and 3.40 eV, respectively. Two-dimensional Zn2(V,Nb,Ta)N3 have slightly higher band gap sizes of 2.77 eV, 3.33 eV, and 3.23 eV, respectively. Carrier mass, carrier mobility and carrier relaxation time are found to be anisotropic in all the studied structures. Bulk and 2D samples show an order of magnitude higher electron mobility compared to hole mobility. The highest electron mobility in bulk Zn2NbN3 and Zn2TaN3 is about ∼103 cm2 V-1 s-1. Importantly, for 2D Zn2NbN3, an abnormally high electron mobility of 1.67 × 104 cm2 V-1 s-1 is observed, which is not inferior to the highest known electron mobility values in 2D materials. Such a high electron mobility in 2D Zn2NbN3 can be attributed to a strong delocalization of the conduction band minimum, which is responsible for electron transport. Therefore, this work opens up new materials for high performance nanodevices, such as tandem solar cells and field-effect transistors. This study also provides deep physical insights into the nature of carrier transport mechanisms in bulk and 2D Zn2(V,Nb,Ta)N3 ternary nitrides.

Polytelluride square planar chain-induced anharmonicity results in ultralow thermal conductivity and high thermoelectric efficiency in Al2Te5 monolayers.

Two-dimensional (2D) metal chalcogenides provide rich ground for the development of nanoscale thermoelectrics, although achieving optimal thermoelectric efficiency is still a challenge. Here, we leverage the unique chemistry of tellurium (Te), renowned for its hypervalent bonding and catenation abilities, to tackle this challenge as manifested in Al2Te3 and Al2Te5 monolayers. While the former forms a straightforward covalent Al-Te network, the latter adopts a more intricate bonding mechanism, enabled by eccentric features of Te chemistry, to maintain charge balance. In Al2Te5, a square planar chain (SPC) known as polytelluride [Te3]2- is neutralized by the covalently bonded [Al2Te2]2+ framework. The hypervalent nature of Te results in bizarre Born effective charges of 7 and -4 for adjacent Te atoms within the square planar chain, a feature that induces significant anharmonicity in Al2Te5 monolayers. Enhanced anharmonic lattice vibrations and the accordion pattern bestow glass-like, strongly anisotropic thermal conductivity to the Al2Te5 monolayer. The calculated κL values of 1.8 and 0.5 W m-1 K-1 along the a- and b-axes at 600 K are one order of magnitude lower than those of Al2Te3, and even lower than monolayers that contain heavy cations like Bi2Te3. Moreover, the tellurium chain dominates the valence band maximum and conduction band minimum of Al2Te5, leading to a high valley degeneracy of 10, and thus a high power factor and figure of merit (zT). Using rigorous first-principles calculations of electron relaxation time, the estimated hole-doped and electron-doped zT of, respectively, 1.5 and 0.5 at 600 K is achieved for Al2Te5. The pioneering zT of Al2Te5 compared to that of Al2Te3 is rooted merely in its amorphous-like lattice thermal transport and its polytelluride chain. These findings underscore the importance of aluminum telluride and polymeric-based inorganic compounds as practical and cost-effective thermoelectric materials, pending further experimental validation.

Temperature dependence of the anisotropy of the infrared dielectric properties and phonon-plasmon coupling in n-doped 4H-SiC

Polarized infrared reflectivity spectroscopy is used to measure the temperature dependence of the anisotropy of the infrared dielectric properties and the coupling between phonon and plasmon modes in n-doped 4H-SiC. The advantage of polarized infrared spectroscopy over the commonly used Raman spectroscopy is that it enables dielectric, plasmonic, and transport properties to be probed along and perpendicular to the c-axis, which is impossible with Raman spectroscopy due to its selection rules. In addition, the infrared spectrum, comparatively rare for Raman spectroscopy, can be described at high temperatures with simple classical theory, providing more precise information on the properties of the material being measured. Analysis of the s- and p-polarized infrared reflectivity spectra of an n-doped 4H-SiC substrate shows that the strength and damping of the oscillators, the response of the bound electrons to an infrared excitation, the effective ion mass, and the transverse frequency and anharmonicity of the phonons of n-doped 4H-SiC are temperature-sensitive and strongly anisotropic. It also shows that the plasmonic properties of n-doped 4H-SiC, namely the relaxation time and the collective oscillation frequency of free electrons, are also highly anisotropic and, due to the long relaxation time of free electrons in the direction parallel to the c-axis, only the axial longitudinal phonon-plasmon modes split into low-frequency and high-frequency modes at temperatures above 700 K.