Electronic Properties Research Articles

Tuning Two-Dimensional Phthalocyanine Dual Site Metal-Organic Framework Catalysts for the Oxygen Reduction Reaction.

Metal-organic frameworks (MOFs) offer an interesting opportunity for catalysis, particularly for metal-nitrogen-carbon (M-N-C) motifs by providing an organized porous structural pattern and well-defined active sites for the oxygen reduction reaction (ORR), a key need for hydrogen fuel cells and related sustainable energy technologies. In this work, we leverage electrochemical testing with computational models to study the electronic and structural properties in the MOF systems and their relationship to ORR activity and stability based on dual transitional metal centers. The MOFs consist of two M1 metals with amine nodes coordinated to a single M2 metal with a phthalocyanine linker, where M1/M2 = Co, Ni, or Cu. Co-based metal centers, in particular Ni-Co, demonstrate the highest overall activity of all nine tested MOFs. Computationally, we identify the dominance of Co sites, relative higher importance of the M2 site, and the role of layer M1 interactions on the ORR activity. Selectivity measurements indicate that M1 sites of MOFs, particularly Co, exhibit the lowest (<4%), and Ni demonstrates the highest (>46%) two-electron selectivity, in good agreement with computational studies. Direct in situ stability characterization, measuring dissolved metal ions, and calculations, using an alkaline stability metric, confirm that Co is the most stable metal in the MOF, while Cu exhibits notable instability at the M1. Overall, this study reveals how atomistic coupling of electronic and structural properties affects the ORR performance of dual site MOF catalysts and opens new avenues for the tunable design and future development of these systems for practical electrochemical applications.

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy.

The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe's electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe's band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.

Semiconductive Behavior and Photoconductivity of Uranyl Dithiophosphinate Single Crystal.

Herein, we detail the synthesis, structure, and photoconductivity of the uranyl dithiophosphinate single crystal UO2[S2P(C6H5)2]2(CH3OH)·CH3OH (denoted as U-DPDPP). The formation of bonds between uranyl ions and sulfur-based ligands endows U-DPDPP with a distinct electronic absorption property with a broadband spectrum spanning from 250 to 550 nm, giving rise to a unique semiconductive property. Under X-ray illumination, U-DPDPP displays a distinctive photoconductivity response, with a charge carrier mobility lifetime (μτ) of 2.78 × 10-4 cm2·V-1 achieved, which contradicts the electronic-silence behavior of uranyl nitrate crystal.

Hidden Impurities Generate False Positives in Single Atom Catalyst Imaging.

Single-atom catalysts (SACs) are an emerging class of materials, leveraging maximum atom utilization and distinctive structural and electronic properties to bridge heterogeneous and homogeneous catalysis. Direct imaging methods, such as aberration-corrected high-angle annular dark-field scanning transmission electron microscopy, are commonly applied to confirm the atomic dispersion of active sites. However, interpretations of data from these techniques can be challenging due to simultaneous contributions to intensity from impurities introduced during synthesis processes, as well as any variation in position relative to the focal plane of the electron beam. To address this matter, this paper presents a comprehensive study on two representative SACs containing isolated nickel or copper atoms. Spectroscopic techniques, including X-ray absorption spectroscopy, were employed to prove the high metal dispersion of the catalytic atoms. Employing scanning transmission electron microscopy imaging combined with single-atom-sensitive electron energy loss spectroscopy, we scrutinized thin specimens of the catalysts to provide an unambiguous chemical identification of the observed single-atom species and thereby distinguish impurities from active sites at the single-atom level. Overall, the study underscores the complexity of SACs characterization and establishes the importance of the use of spectroscopy in tandem with imaging at atomic resolution to fully and reliably characterize single-atom catalysts.

From Chemical Drawing to Electronic Properties of Semiconducting Polymers in Bulk: A Tool for Chemical Discovery.

A quantum chemistry (QC)/molecular dynamics (MD) scheme is developed to calculate electronic properties of semiconducting polymers in three steps: (i) constructing the polymer force field through a unified workflow, (ii) equilibrating polymer models, and (iii) calculating electronic structure properties (e.g., density of states and localization length) from the equilibrated models by QC approaches. Notably, as the second step of this scheme is generally the most time-consuming one, we introduce an alternative method to compute thermally averaged electronic properties in bulk, based on the simulation of a polymer chain in the solution of its repeat units, which is shown to reproduce the microstructure of polymer chains and their electrostatic effect (successfully tested for five benchmark polymers) 10 times faster than state-of-the-art methods. In fact, this scheme offers a consistent and speedy way of estimating electronic properties of polymers from their chemical drawings, thus ensuring the availability of a homogeneous set of simulations to derive structure-property relationships and material design principles. As an example, we show how the electrostatic effect of the polymer chain environment can disturb the localized electronic states at the band tails and how this effect is more significant in the case of diketopyrrolopyrrole polymers as compared to indacenodithiophene and dithiopheneindenofluorene ones.

Investigating the structural, electronic, and magnetic properties of Cd1-xVxTe: Insights from First-Principles calculations

In our study, we aim to investigate the structural, electronic, and magnetic properties of CdVTe, a diluted magnetic semiconductor with a Cadmium telluride (CdTe) structure. To achieve this, we employ the full potential linear augmented plane wave method implemented in the CASTEP code, which allows us to accurately simulate the behavior of the system. To describe the electronic exchange and correlation effects, we adopt the generalized gradient approximation (GGA) within the density functional theory (DFT) framework. This choice of methodology ensures reliable and accurate calculations of the electronic and magnetic properties of Cd1-xVxTe. Our results reveal that the substitution of Vanadium (V) into the Cadmium (Cd) site of the CdTe lattice does not alter the zinc blende crystal structure, demonstrating the stability and structural integrity of the system. Furthermore, our calculations demonstrate that the introduction of Vanadium impurities leads to spin polarization within the material, resulting in the emergence of a magnetic moment. Notably, we find that a Vanadium concentration of approximately x≈0.12 exhibits the strongest magnetic properties, characterized by a significant magnetic moment. These findings provide valuable insights into the behavior and potential applications of CdVTe as a diluted magnetic semiconductor, shedding light on the interplay between structural, electronic, and magnetic properties in this material.

Benchmark Investigation of SCC-DFTB against Standard and Hybrid DFT to Model Electronic Properties in Two-Dimensional MOFs for Thermoelectric Applications.

Recent studies have shown that metal-organic frameworks (MOFs) have potential as thermoelectric materials, and the topic has received increasing attention. The main motivation for this project is to further our knowledge of thermoelectric properties in MOFs and find which available self-consistent-charge density functional tight binding (SCC-DFTB) method can best predict (at least trends in) the electronic properties of MOFs at a lower computational cost than standard density functional theory (DFT). In this work, the electronic properties of monolayer, serrated, AA-stacked, and/or AB-stacked Zn3C6O6, Cd3C6O6, Zn-NH-MOF─for which no previous calculations of thermoelectric performance exist─and Ni3(HITP)2 MOFs are modeled with DFT-PBE, DFT-HSE06, GFN1-xTB, GFN2-xTB, and DFTB-3ob/mio. The band structures, density of states, and their relative orbital contributions, as well as the electrical conductivity, Seebeck coefficient, and power factor, are compared across methods and geometries. Our results suggest that GFN-xTB is adequate to predict the MOFs' band structure shape and density of states but not band gap. Our calculations further indicate that Zn3C6O6, Cd3C6O6, and Zn-NH-MOF have higher power factor values than Ni3(HITP)2, one of the highest performing synthesized MOFs, and are therefore promising for thermoelectric applications.

Tuning Electronic and Structural Properties of Lead-Free Metal Halide Perovskites: A Comparative Study of 2D Ruddlesden-Popper and 3D Compositions.

In recent decades, two-dimensional (\num{2}D) perovskites have emerged as promising semiconductors for next-generation photovoltaics, showing notable advancements in solar energy conversion. Herein, we explore the impact of alternative inorganic lattice \ce{BX}-based compositions ($\ce{B} = \ce{Ge}$ or \ce{Sn}, $\ce{X} = \ce{Br}$ or \ce{I}) on the energy gap and stability. Our investigation encompasses \ce{BA$_2$MA$_{n-1}$B$_n$X$_{3n+1}$} \num{2}D Ruddlesden-Popper perovskites (for $n = \num{1} - \num{5}$ layers) and \num{3}D bulk \ce{(MA)BX$_3$} systems, employing first-principles calculations with spin-orbit coupling (SOC), DFT-1/2 quasiparticle, and D3 dispersion corrections. The study unveils how atoms with smaller ionic radii induce anisotropic internal and external distortions within the inorganic and organic lattices. Introducing the \ce{BA} spacers in the low-layer regime reduces local distortions but widens band gaps. Our calculation protocol provides deeper insights into the physics and chemistry underlying \num{2}D perovskite materials, paving the way for optimizing environmentally friendly alternatives that can efficiently replace \ce{Pb} with sustainable materials.

Uncovering the Role of Methylmercury on DNA Lesions at Cytotoxic Concentrations in Glutathione-Depleted Cells: Insights from Experimental and Computational Studies.

Organomercurials (RHg+), especially methylmercury (MeHg+) and ethylmercury (EtHg+), are considered to be more neurotoxic than the inorganic counterpart (Hg2+). They cause massive DNA damage in cells, especially in neurons, where cellular glutathione (GSH) levels are significantly low. However, the mechanism by which RHg+ exerts massive DNA damage at cytotoxic concentrations in brain cells remains obscure. In this study, we investigated the effect of RHg+ on the structural and electronic properties of nucleosides and its effects on DNA damage. The direct interaction of RHg+ with the nucleoside significantly weakens N-glycosidic bonds, decreases the C-H bond energy of sugar moieties, and increases the electrophilicity of the C8-center of purine bases. As a consequence, RHg+-conjugated DNA molecules are extremely labile and highly sensitive to any nucleophiles/radicals present in GSH-depleted cells and, thus, undergo enhanced oxidative and unusual alkylative DNA damage. We also report a functional model of organomercurial lyase, which showed excellent cytoprotective effect against RHg+-induced cytotoxicity; this reverses the activity of glutathione reductase inhibited by MeHgCl and ceases oxidative and alkylating DNA damage. This intriguing finding provides new mechanistic insight into the mode of action of organomercurials in GSH-depleted cells and their adverse effects on individuals with neurodegenerative disorders associated with oxidative stress.

Orbital-overlap-driven hybridization in 3d-transition metal perovskite oxides LaMO3 (M = Ti-Ni) and La2CuO4

The wide tunability of strongly correlated transition metal (TM) oxides stems from their complex electronic properties and the coupled degrees of freedom. Among the perovskite oxides family, LaMO3 (M = Ti-Ni) allows an M-dependent systematic study of the electronic structure within the same-structure-family motif. While most of the studies have been focusing on the 3d TMs and oxygen sites, the role of the rare-earth site has been far less explored. In this work, we use resonant inelastic X-ray scattering (RIXS) at the lanthanum N4,5 edges and density functional theory (DFT) to investigate the hybridization mechanisms in LaMO3. We link the spatial-overlap-driven hybridization to energetic-overlap-driven hybridization by comparing the RIXS chemical shifts and the DFT band widths. The scope is extended to highly covalent Ruddlesden-Popper perovskite La2CuO4 by intercalating lanthanum atoms to rock-salt layers. Our work evidences an observable contribution of localized lanthanum 5p and 4f orbitals in the band structure.

Tailoring amorphous boron nitride for high-performance two-dimensional electronics

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (<250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.

Double Superconducting Dome of Quasi Two-Dimensional TaS2 in Non-Centrosymmetric van der Waals Heterostructure.

Two-dimensional van der Waals heterostructures (2D-vdWHs) based on transition metal dichalcogenides (TMDs) provide unparalleled control over electronic properties. However, the interlayer coupling is challenged by the interfacial misalignment and defects, which hinders a comprehensive understanding of the intertwined electronic orders, especially superconductivity and charge density wave (CDW). Here, by using pressure to regulate the interlayer coupling of non-centrosymmetric 6R-TaS2 vdWHs, we observe an unprecedented phase diagram in TMDs. This phase diagram encompasses successive suppression of the original CDW states from alternating H-layer and T-layer configurations, the emergence and disappearance of a new CDW-like state, and a double superconducting dome induced by different interlayer coupling effects. These results not only illuminate the crucial role of interlayer coupling in shaping the complex phase diagram of TMD systems but also pave a new avenue for the creation of a novel family of bulk heterostructures with customized 2D properties.

Comparative properties of ZnO modified Au/Fe nanocomposite: electronic, dynamic, and locator annealing investigation.

A computational representation was used to model the doping and nanomodification of ZnO nanoparticles incorporated in Au/Fe nanocomposite. Au/Fe nanostructure was geometrically and discussed to investigate its electronic properties such electronic band structure and PDOS spectra. Moreover, the ZnO interacted with Au/Fe system was illustrated concerning the modified properties present on the surface of the nanocomposite as it may behave different attribution of band gap evaluated after ZnO modification included. Molecular dynamic simulation of the whole nano system was studied to predict the system stability concerning temperature and energy parameters during 100 ps simulation time. The most effective models under investigation were evaluated using adsorption annealing computations associated with the adsorption energy surface. A highly stable energetic adsorption system was anticipated by the periodic adsorption-annealing calculation. Au and Fe pure metals nanostructures were studied as a separate molecule with (0 0 1) plane surface for optimum energy minimization. Dmol3 module in/materials studio software was utilized for this protocol. The designed Au/Fe layers for nanostructure building material was computationally optimized, where DFT level was considered involving generalized gradient approximation (GGA) with Perdew-Burke-Ernzerh (PBE) exchange functional. In the computations of the structure matrix simulation, the global orbital cutoff was selected. To address the weak quantification of the standard DFT functionals, Tkatchenko-Schefer (TS) (DFT + D) was utilized to precisely correct the pairwise dispersion of the functionals. The electrical parameters were interpreted using the reciprocal space of the ultrasoft pseudopotential representation. To overcome the issues of self-electron interaction, the nonlocal hybrid functional with PBE0 method was utilized to calculate the electronic properties of the studied systems. The computations generated are predicated on a particular trajectory of the gamma k-point band energy interpolations proposed in this examination. An investigation into the position of adsorption came after geometric optimization. Adsorbed on an optimized Au/Fe surface, ZnO nanostructure was computationally explored using the Dmol3 simulation software.

Hybrid-DFT study of halide perovskites, an energy-efficient material under compressive pressure for piezoelectric applications

Recent studies have reported that lead-halide perovskites are the most efficient energy-harvesting materials. Regardless of their high-output energy and structural stability, lead-based products have risk factors due to their toxicity. Therefore, lead-free perovskites that offer green energy are the expected alternatives. We have taken CsGeX3 (X = Cl, Br, and I) as lead-free halide perovskites despite knowing the low power conversion rate. Herein, we have tried to study the mechanisms of enhancement of energy-harvesting capabilities involving an interplay between structure and electronic properties. A density functional theory simulation of these materials shows a decrease in the band gaps, lattice parameters, and volumes with increasing applied pressure. We report the high piezoelectric responses and high electro-mechanical conversion rates, which are intriguing for generating electricity through mechanical stress.

Nanotechnology's potential in advancing renewable energy solutions

Nanotechnology has emerged as a promising frontier in the quest for sustainable energy solutions, offering transformative opportunities to address pressing challenges in renewable energy generation, storage, and conversion. This review explores the potential of nanotechnology in advancing renewable energy solutions, encompassing a wide range of applications spanning solar energy, wind energy, energy storage, and fuel cells. By leveraging the unique properties of nanomaterials, such as high surface area-to-volume ratio, tunable optical and electronic properties, and enhanced catalytic activity, researchers and engineers can develop innovative materials and devices with unprecedented performance and efficiency. Nanotechnology-enabled advancements in solar photovoltaics include the development of next-generation solar cells incorporating nanostructured materials, such as quantum dots, nanowires, and perovskite-based solar cells, to enhance light absorption, charge transport, and overall power conversion efficiency. In the realm of energy storage, nanomaterials hold promise for improving the performance and longevity of batteries, supercapacitors, and other energy storage devices through enhanced electrode materials, electrolytes, and nanostructured architectures. Furthermore, nanotechnology-driven innovations in wind energy, such as lightweight and durable nanocomposite materials for turbine blades, and advancements in fuel cell technologies, including catalyst nanoparticles for efficient hydrogen production and conversion, exemplify the diverse applications and transformative potential of nanotechnology in renewable energy. Through a comprehensive analysis of recent research and development efforts, this abstract underscores the critical role of nanotechnology in accelerating the transition to a sustainable and renewable energy future. Keywords: Nanotechnology, Renewable Energy, Solar Energy, Wind Energy, Energy Storage, Nanomaterials.

Spin-Dependent Control of Electronic and Magnetic Properties of 3-Alkylthiophene Oligomers and Their Composites with Aromatic Nanoadditives

Spin-Dependent Control of Electronic and Magnetic Properties of 3-Alkylthiophene Oligomers and Their Composites with Aromatic Nanoadditives

Inducing d 0 magnetism in new SrCl2 monolayer towards spintronic applications

Magnetism engineering in two-dimensional (2D) materials has been widely explored to make new spintronic materials. In this work, the doping (with alkali metals at Sr sublattice and with chalcogen atoms at Cl sublattice) method are proposed to induce significant d 0 magnetism in the non-magnetic SrCl2 monolayer. This 2D material is an indirect gap insulator with large band gap of 4.97(6.25) eV as obtained by PBE(HSE06) functional, exhibiting ionic character that is generated by the charge transfer from Sr atom to Cl atoms. The monolayer is significantly magnetized by doping with alkali metals, where a total magnetic moments between 0.90 and 1.00 μ B are obtained. Herein, Cl atoms closest to the doping site make main contribution to the system magnetism. Interestingly, the doped systems exhibit half-metallic behavior that is generated by semiconductor spin-up state and metallic spin-down state. On the other hand, the diluted magnetic semiconductor nature emerges in SrCl2 monolayer as a result of doping with chalcogen atoms. In these cases, total magnetic moment of 1.00 μ B is obtained, where magnetic properties are produced mainly by chalcogen impurities and Cl atoms below them. The electronic and magnetic properties of the doped systems are regulated mainly by the outermost p orbital of Cl and chalcogen atoms, and Sr-4d orbital that form mainly the conduction band. Upon further increasing the doping level of K and O atoms, the half-metallic or magnetic semiconductor natures are preserved. Results presented in this work may introduce new prospective 2D spintronic candidates for spintronic applications, which are derived from a non-magnetic SrCl2 monolayer via doping with d 0 atoms.

Regulating the Electronic and Magnetic Properties of a SnSSe Janus Monolayer toward Optoelectronic and Spintronic Applications

Regulating the Electronic and Magnetic Properties of a SnSSe Janus Monolayer toward Optoelectronic and Spintronic Applications

Electronic, structural, magnetic and thermodynamic properties of the half-metallic ferromagnetic compounds containing chrome and tantalum Cr2TaZ (Z = Al, Ga and Sb)

Electronic, structural, magnetic and thermodynamic properties of the half-metallic ferromagnetic compounds containing chrome and tantalum Cr2TaZ (Z = Al, Ga and Sb)

Antiferromagnetic-to-ferromagnetic Transition in the GdNiSi1 − xAlx Compound

In this work, the electronic structure and magnetic properties of GdNiSi have been investigated within the framework of theoretical DFT + U method. The antiferromagnetic ordering of the Gd moments was obtained as the ground state, whereas Ni and Si have negligible magnetic moments. An antiferromagnetic-to-ferromagnetic transition was found when GdNiSi is doped with Al in our theoretical calculations. The antiferromagnetic-to-ferromagnetic transition takes place in the Gd sublattice, the magnetic moments at the Gd ions remain the same but the type of magnetic ordering changes. It was found that even at concentrations as low as x = 0.1, the ferromagnetic ordering in the Gd sublattice is more favorable in total energy as the ground state which can be ascribed to the shortening of Gd-Gd distances and the oscillating behavior of the Ruderman–Kittel–Kasuya–Yosida interaction in the Al-doped compositions. The electronic structure demonstrates significant changes in the vicinity of the localized Gd 4f states that confirms the presence of the antiferromagnetic-to-ferromagnetic transition using our theoretical results for Al x$$ \geqslant $$ 0.1 in good agreement with the previous experimental magnetic results.