Ultrasoft x-ray spectroscopy methods have been used to observed a change in the energy distribution of the silicon valence states after annealing a-Si:H films at 500 °C. This change appears as three distinct maxima in the density of states 3.5, 7.2, and 10.2 eV above the top of the valence band, which indicates ordering of the a-Si:H structural network. The energy distance between the latter two maxima (E−Ev=7.2 and 10.2 eV) supports electron-diffraction data indicating a decrease in the silicon-silicon interatomic distance by 0.2 A in comparison with the crystal. The presence of a third maximum (E−Ev=3.5 eV) is connected with the change in the hybridization of the s-p-functions of silicon with decrease of the coordination number.