Electronic Integrated Circuits Research Articles

Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si) substrates is highly desirable for large-scale electronic and photonic integrated circuits. Challenges of this approach relate primarily to lattice, polarity, and coefficient of thermal expansion mismatch, which ultimately generate a high density of defects and limit the reliability of active devices. Ongoing efforts to monolithically integrate lasers in silicon photonics include leveraging quantum dots for reduced sensitivity to defects and the ability to enable 1310 nm lasers with gallium arsenide (GaAs) and related compounds. In this work, to extend the operation window to the widely used 1550 nm telecommunications region, we have demonstrated continuous-wave (CW) electrically pumped indium phosphide (InP)-based quantum well lasers on complementary metal-oxide-semiconductor (CMOS)-compatible (001) Si. Heteroepitaxy of InP and related compounds on Si poses additional challenges because the lattice mismatch is significantly larger compared to GaAs. Key to our approach is the development of a low dislocation density InP-on-Si template by metalorganic chemical vapor deposition (MOCVD). Following an InP buffer with a surface defect density of ${1.15} \times {{10}^8}/{{\rm cm}^2}$1.15×108/cm2, a seven-layer indium gallium arsenide phosphide (InGaAsP) multi-quantum well laser diode structure was grown. Fabry–Perot ridge waveguide lasers were then fabricated. A 20-µm wide and 1000-µm long laser demonstrates a room temperature continuous-wave (CW) lasing threshold current density of ${2.05}\;{{\rm kA}/{\rm cm}^2}$2.05kA/cm2 and a maximum output power of 18 mW per facet without facet coating. CW lasing up to 65°C and pulsed lasing greater than 105°C were achieved. This MOCVD-based heteroepitaxy approach offers a practical path toward monolithic integration of InP lasers in silicon photonics.

An Enhancement Mode MOSFET Based on GaN-on-Silicon Platform for Monolithic OEIC

This letter proposes an enhancement mode MOSFET on GaN-on-silicon LED epitaxial wafer for the first time. The fabrication processes of the MOSFET are fully compatible with InGaN/GaN multiple-quantum-wells (MQWs) diode and include no ion implantation or additional epitaxial growth. Gate-recess structure is formed by well-controlled etching to define the channel area. The bottom and side wall of the recess are fully covered by the gate metal to improve the control ability of gate voltage on the channel conductance. The measurement results indicate acceptable performance of the MOSFET with threshold voltage of 6.01 V. Finally, the MOSFET is serially connected with an LED based on the same platform and the brightness of LED can be effectively controlled by the gate voltage according to the experimental results. Therefore the MOSFET and LED have been fabricated on the same GaN-on-silicon platform, which paves way for the monolithic optical electronic integrated circuit (OEIC).

Structured Array for Designing High-Speed Multichannel ICs for Nuclear Electronics

New structured array (SA) MH2XA020 and the way of designing nuclear electronic integrated circuits (ICs) based on it are considered. The SA MH2XA020 contains eight readout channels. Each channel includes a charge-sensitive amplifier (CSA), an amplifier-shaper (AS) with gain control and “tail” cancellation, a sampling and storage device (SSD), and a multiplexer. In the SA, it is possible to change the operating current of the input transistor, RC value in the CSA feedback loop, and the peaking time of the AS. Experimental results of eight-channel MH2XA020-01 chip implemented on the SA are presented.

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group III–V semiconductors are of particular interest and have been widely investigated due to their excellent optical properties and high carrier mobility. However, the integration of III–V structures as light sources and numerous other optical components on Si, which is the foundation for most optoelectronic and electronic integrated circuits, has been hindered by the large lattice mismatch between these compounds. This mismatch results in substantial amounts of strain and degradation of the performance of the devices. Nanowires (NWs) are unique nanostructures that induce elastic strain relaxation, allowing for the monolithic integration of III–V semiconductors on the cheap and mature Si platform. A technique that ensures flexibility and freedom in the design of NW structures is the growth of ternary III–V NWs, which offer a tuneable frame of optical characteristics, merely by adjusting their nominal composition. In this review, we will focus on the recent progress in the growth of ternary III–V NWs on Si substrates. After analysing the growth mechanisms that are being employed and describing the effect of strain in the NW growth, we will thoroughly inspect the available literature and present the growth methods, characterization and optical measurements of each of the III–V ternary alloys that have been demonstrated. The different properties and special treatments required for each of these material platforms are also discussed. Moreover, we will present the results from the works on device fabrication, including lasers, solar cells, water splitting devices, photodetectors and FETs, where ternary III–V NWs were used as building blocks. Through the current paper, we exhibit the up-to-date state in this field of research and summarize the important accomplishments of the past few years.

Optimized Routing Protocols for Data Monitoring in Wireless Sensor Network

In recent, the wireless networking technologies have witnessed monumental growth. The discovery of IEC (Integrated Electronic Circuits) which provide minute, intelligent sensory nodes that are being embedded within the human body has resulted in the formation of WBANs - Wireless Body Area Networks. The technology of WSN (wireless sensor networks) aids in uninterrupted monitoring of an individual’s health and the patient’s diabetes practice period with no involvement in patient’s mundane activities on local servers. There is a central sink node present within the sensor network, which supervises wireless transmission, optimizes the lifetime of the network and picks out the optimal path. The present research work proposes the framework of DCDH-SRP (dynamic channel direction and hop count based secure routing protocol) also termed as a secure communication monitoring system for transmitting and receiving the sensitive data in a secured way form the server to the network users. In the enhanced EAODV protocols, each node possesses the transmission rate as TX and receiving rate being RX. TX and RX rely upon the chosen optimal path. ACO - Ant Colony Optimization which is founded on the ODMRP-ACO (optimized dynamic, secure multipath routing protocol) is adapted for transmission of data in the wireless sensor networks. ACO determines the shortest path amidst the source and the destination node. The protocol recommended is DCDH-SRP which aids in data transmission and determining of shortest path relies upon the direction of dynamic channel node and minimum hop count in wireless sensor networks. For analyzing the performance related to the path duration and hop count metric, a network (n) model for DCDH-SRP is being formulated. A comparison is made between the proposed system and the improvised (Enhanced -Ad Hoc On-Demand Distance Vector) EAODV and (Optimized Dynamic Multi-path Routing Protocol- Ant Colony Optimization) ODMRP-ACO (of an earlier work). According to the output generated, the performance is enhanced using the proposed protocol than the other existing systems. In order to verify the mathematical models and perform extensive testing of the proposed protocol, the NS2 simulator is adopted. Remarkable and improvised performance is revealed by the DCDH-SR Protocols.

Co-Integrated PIN-PMN-PT 2-D Array and Transceiver Electronics by Direct Assembly Using a 3-D Printed Interposer Grid Frame.

Tiled modular 2-D ultrasound arrays have the potential for realizing large apertures for novel diagnostic applications. This work presents an architecture for fabrication of tileable 2-D array modules implemented using 1-3 composites of high-bandwidth (BW) PIN-PMN-PT single-crystal piezoelectric material closely coupled with high-voltage CMOS application-specific integrated circuit (ASIC) electronics for buffering and multiplexing functions. The module, which is designed to be operated as a λ -pitch 1.75-D array, benefits from an improved electromechanical coupling coefficient and increased Curie temperature and is assembled directly on top of the ASIC silicon substrate using an interposer backing. The interposer consists of a novel 3-D printed acrylic frame that is filled with conducting and acoustically absorbing silver epoxy material. The ASIC comprises a high-voltage switching matrix with locally integrated buffering and is interfaced to a Verasonics Vantage 128, using a local field programmable gate array (FPGA) controller. Multiple prototype 5 ×6 element array modules have been fabricated by this process. The combined acoustic array and ASIC module was configured electronically by programming the switches to operate as a 1-D array with elements grouped in elevation for imaging and pulse-echo testing. The resulting array configuration had an average center frequency of 4.55 MHz, azimuthal element pitch of [Formula: see text], and exhibited average -20-dB pulsewidth of 592 ns and average -6-dB fractional BW of 77%.

Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation.

Single dopant atoms or dopant-related defect centers in a solid state matrix are of particular importance among the physical systems proposed for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits. Here, using a deterministic source of single laser-cooled Pr^{+} ions, we present the fabrication of arrays of praseodymium color centers in yttrium-aluminum-garnet substrates. The beam of single Pr^{+} ions is extracted from a Paul trap and focused down to 30(9)nm. Using a confocal microscope, we determine a conversion yield into active color centers of up to 50% and realize a placement precision of 34nm.

A 26-Gb/s 3-D-Integrated Silicon Photonic Receiver in BiCMOS-55 nm and PIC25G With −15.2-dBm OMA Sensitivity

This letter presents a 3-D-integrated 26 Gb/s opto-electrical receiver front-end. The electronic integrated circuit (EIC) is fabricated in a BiCMOS-55-nm technology, flipped and placed on top of the photonic integrated circuits (PICs) die through copper pillars. In the receiver chain, a fully differential shunt-feedback TI amplifier (FD-SF TIA) is followed by a limiting amplifiers (LAs) with embedded equalization, output driver and an automatic offset cancelation loop. The whole receiver provides a transimpedance (TI) gain of 76 dBΩ with 30-GHz bandwidth. By exploiting the FD-SF TIA with low parasitic capacitance of the Germanium dual heterojunction photo diode (Ge-PD) in the photonic die, the receiver achieves sensitivity of -15.2 dBm optical modulation amplitude (OMA) at Ge-PD and -10-dBm OMA at the single-mode fiber (SMF) optical output with bit error rate of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> and PRBS 15. The sensitivity is aligned with state-of-the-art receivers employing discrete photonics and, to author's best knowledge, it is the lowest reported among published 25 Gb/s receivers exploiting silicon photonics.

Novel frontier of photonics for data processing—Photonic accelerator

In the emerging Internet of things cyber-physical system-embedded society, big data analytics needs huge computing capability with better energy efficiency. Coming to the end of Moore’s law of the electronic integrated circuit and facing the throughput limitation in parallel processing governed by Amdahl’s law, there is a strong motivation behind exploring a novel frontier of data processing in post-Moore era. Optical fiber transmissions have been making a remarkable advance over the last three decades. A record aggregated transmission capacity of the wavelength division multiplexing system per a single-mode fiber has reached 115 Tbit/s over 240 km. It is time to turn our attention to data processing by photons from the data transport by photons. A photonic accelerator (PAXEL) is a special class of processor placed at the front end of a digital computer, which is optimized to perform a specific function but does so faster with less power consumption than an electronic general-purpose processor. It can process images or time-serial data either in an analog or digital fashion on a real-time basis. Having had maturing manufacturing technology of optoelectronic devices and a diverse array of computing architectures at hand, prototyping PAXEL becomes feasible by leveraging on, e.g., cutting-edge miniature and power-efficient nanostructured silicon photonic devices. In this article, first the bottleneck and the paradigm shift of digital computing are reviewed. Next, we review an array of PAXEL architectures and applications, including artificial neural networks, reservoir computing, pass-gate logic, decision making, and compressed sensing. We assess the potential advantages and challenges for each of these PAXEL approaches to highlight the scope for future work toward practical implementation.

Stochastic Collocation With Non-Gaussian Correlated Process Variations: Theory, Algorithms, and Applications

Stochastic spectral methods have achieved great success in the uncertainty quantification of many engineering problems, including electronic and photonic integrated circuits influenced by fabrication process variations. Existing techniques employ a generalized polynomial-chaos expansion, and they almost always assume that all random parameters are mutually independent or Gaussian correlated. However, this assumption is rarely true in real applications. How to handle non-Gaussian correlated random parameters is a long-standing and fundamental challenge. A main bottleneck is the lack of theory and computational methods to perform a projection step in a correlated uncertain parameter space. This paper presents an optimization-based approach to automatically determinate the quadrature nodes and weights required in a projection step, and develops an efficient stochastic collocation algorithm for systems with non-Gaussian correlated parameters. We also provide some theoretical proofs for the complexity and error bound of our proposed method. Numerical experiments on synthetic, electronic and photonic integrated circuit examples show the nearly exponential convergence rate and excellent efficiency of our proposed approach. Many other challenging uncertainty-related problems can be further solved based on this work.

An Advanced Extreme Environment Wireless Telemetry System for Turbine Blade Instrumentation

ABSTRACT As advanced natural gas power generation systems evolve, the thrust for increased efficiencies and reduced emissions results in increasingly harsh conditions inside the turbine environment. These high temperatures, pressures, and corrosive atmospheres result in accelerated rates of degradation, leading to failure of turbine materials and components. The University of Arkansas (UA) and Siemens, in collaboration with the DoE's National Energy Technology Laboratory (NETL), are developing a reliable and long-term monitoring capability in the turbine hot gas path in the form of novel ceramic-based thermocouples and integrated wide band gap instrumentation electronics that will contribute to the overall reliability of gas turbines. When equipped with better monitoring and controls, power plants can operate with increased fuel-burning efficiency, improved process dynamics and gas concentrations, and increased overall longevity of the power plant components. This will result in increased turbine availability and a reduction in outages and maintenance costs. One of the key aspects to driving forward turbine monitoring capability is the development of high temperature capable integrated circuit (IC) electronics. Previous papers have described 500 °C + electronics that were developed primarily from a combination of discrete single transistors combined with supporting high temperature passive components. While these circuits have been tested successfully in high temperature spin test environments, the move to an IC approach will greatly increase the performance and reliability of turbine monitoring systems. This program is developing such capability through the implementation of silicon carbide (SiC) based ICs, and this paper details the initial approach and early testing of the developed devices. This research represents an important step towards the realization of a field deployable high reliability turbine condition monitoring system.

Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

AbstractSemiconductor optoelectronics have contributed tremendously to various aspects of the technological progress in the past. Recently, they also stimulate research in nanophotonics seeking to overcome the inherent limitations of electronic integrated circuits and satisfy the growing demand for faster on‐chip communications. In particular, nanowire (NW) lasers generate coherent light at the nanoscale and meanwhile work consistently at room temperature covering a huge spectral range from the ultraviolet down to the mid‐infrared depending on the NW material. The underlying physics of their electronic and photonic systems are also studied very recently, thus NW lasers become relevant as an emergent tool for a variety of practical applications. In this review, the origins determining the emission wavelength of the device are explained, and approaches toward efficient improvement of the NW laser devices in terms of emission energy tunability are summarized. The optical mode field distribution strongly influences the emission dynamics of the nanolaser device; it will be highlighted how increasing the light–matter interaction in plasmonic type nanolasers causes a significant acceleration of their temporal emission dynamics. Both spectral and temporal tuning will help to solve scientific and engineering challenges forging semiconductor nanowire lasers into powerful tools for nanosensing, nanospectroscopy, and nanotechnology.

Photonic integrated circuits for Department of Defense-relevant chemical and biological sensing applications: state-of-the-art and future outlooks

Photonic integrated circuits (PICs), the optical counterpart of traditional electronic integrated circuits, are paving the way toward truly portable and highly accurate biochemical sensors for Department of Defense (DoD)-relevant applications. We introduce the fundamentals of PIC-based biochemical sensing and describe common PIC sensor architectures developed to-date for single-identification and spectroscopic sensor classes. We discuss DoD investments in PIC research and summarize current challenges. We also provide future research directions likely required to realize widespread application of PIC-based biochemical sensors. These research directions include materials research to optimize sensor components for multiplexed sensing; engineering improvements to enhance the practicality of PIC-based devices for field use; and the use of synthetic biology techniques to design new selective receptors for chemical and biological agents.

High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity

Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time, a low noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode-locking regime in the O-band. A record low timing jitter value of 82.7 fs (4 - 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz are measured. The 3 dB optical bandwidth of the comb is 6.1 nm (containing 58 lines, with 80 lines within the 10 dB bandwidth). The integrated average relative intensity noise values of the whole spectrum and a single wavelength channel are - 152 dB/Hz and - 133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively. Utilizing 64 channels, an aggregate total transmission capacity of 4.1 terabits per second is realized by employing a 32 Gbaud Nyquist four-level pulse amplitude modulation format. The demonstrated performance makes the laser a compelling on-chip WDM source for multi-terabit/s optical interconnects in future large-scale silicon EPICs.

Electroless Deposition-Assisted 3D Printing of Micro Circuitries for Structural Electronics.

Three-dimensional (3D) printing is a next-generation free-form manufacturing technology for structural electronics. The realization of structural electronic devices necessitates the direct integration of electronic circuits into 3D objects. However, creating highly conductive, high-resolution patterns in 3D remains a major challenge. Here, we report on a metallic 3D printing method that incorporates electroless deposition (ELD) into the direct ink writing method. Our approach consists of two steps: (1) direct ink writing of catalyst microstructures with a functional catalyst ink containing Ag ions and (2) ELD of Cu onto the printed catalyst structures. High-quality, stable Cu 3D printing is achieved through the design of the Ag catalyst ink; hydroxypropyl cellulose is added as both a rheological modifier (printing) and dissolution inhibitor (ELD). As a result, various two-dimensional (2D) and 3D Cu micro circuitries with high conductivity (∼65% of bulk) can be directly integrated onto 3D plastic substrates without the need for high-temperature annealing. A hybrid strategy that combines ELD-assisted 3D printing and conventional fused deposition modeling enables full fabrication of structural electronic devices. This 3D printing strategy can be a low-cost and facile method for obtaining highly conductive metallic 2D and 3D microstructures in structural electronics.

Conformal deposition of GeTe films with tunable Te composition by atomic layer deposition

Atomic layer deposition (ALD) of chalcogenide amorphous films has attracted attention, thanks to its ability to deposit highly conformal and uniform thin films on three-dimensional structures; these film properties are critical for the development of ultrahigh-density integrated electronic circuits such as nanoscale 3D cross-point memory stacks. Control over the composition of chalcogenide compounds is indispensable for fabricating functional electronic devices. In this work, the authors used trichlorogermane (HGeCl3) and bis(trimethylsilyl)telluride [(Me3Si)2Te] as ALD precursors to develop conformal and uniform germanium telluride (GeTe) films at low temperature (60 °C). The growth of GeTe resulted in moderately Ge rich films independently of the ALD precursor injection time and the use of single or discrete (Me3Si)2Te doses. To achieve control over the GeTe film composition, the authors developed a unique ALD of elemental tellurium (Te) using tellurium ethoxide [Te(OEt)4] and (Me3Si)2Te as precursors. Combining GeTe and elemental Te in an ALD supercycle fashion, they obtained GeTex films with a controllable Te content showing a uniform and conformal morphology on high aspect ratio trench structures. A detailed analysis of the variations in Ge and Te contents upon exposure of GeTex films to Te(OEt)4 revealed that an interfacial replacement of Ge atoms to form volatile Ge(OEt)2 takes place and produces a decrease in Ge and an increase in Te content. The ALD studies of GeTe and Te films described in this work provide a facile route for deposition of GeTe with controllable composition. This material system is important for the development of ovonic threshold switching selectors and phase change memories.

Thermal hydraulic performance of micro-channel heat sink with composite metal foam-solid fin design

<p indent="0mm">Three-dimensional (3D) interconnect technology promises significant performance advantages for the next generation of high speed and multi-functional electronic devices, however, the large-scale integration of electronic circuit and vertical stacking of multi-functional dice have been demonstrated to result in substantially increased waste-heat generation rates and localized hotspots. Efficient thermal management solutions are imperative to ensure the operating temperature of components below a reasonable level. Among various cooling techniques, metal foam heat sink has been identified as a promising alternative for electronic cooling, because of the large specific surface area, high effective thermal conductivity and intensive fluid mixing capability that foam material provided. In this study, a novel micro-channel heat sink with combined metal foam-solid fin, namely combined fin heat sink (CFHS), was established for electronics cooling. Numerical simulations based on Brinkman-Darcy extended momentum equation and local thermal non-equilibrium energy equations were carried out to investigate the fluid flow and heat transfer characteristics. To simplify the computations, a single channel was used as the computational domain with a dimension of 20 mm×2.4 mm× <sc>6 mm.</sc> The constant heat flux of <sc>100 W/cm²</sc> was supplied at the bottom wall to simulate the high-powered electronic device. Metal foam and fin were made of high thermal conductivity copper, and pure water was used as the working coolant. It was assumed that the metal foam was fully saturated with fluid in laminar flow state and the thermal resistance between the metal foam and fin was neglected. Effects of combined fin configuration on the flow and heat transfer performances were studied to determine the optimal porosity and dimensionless metal foam layer thickness for designing the CFHS. The thermal performance of the novel heat sink was compared to that of the conventional heat sink, and the total thermal resistance was analyzed based on the simplified thermal resistance network. The results indicate that the CFHS is more favorable in promoting thermal performance that the average Nusselt number of CFHS is 2.53 times higher than that of the conventional heat sink, while accompanied by the high pressure drop as a penalty. The flow resistance and specific area are two conflicting parameters that affect the thermal and hydraulic performances of the CFHS, our results show that there exists a critical dimensionless metal foam thickness and optimal porosity, which are 0.9 and 0.3, respectively. Compared with the conventional heat sink, the total thermal resistance of CFHS is significantly reduced by 56%, and the thermal performance factor of CFHS performs 1.32 times higher. The presented CFHS thus provides a feasible solution for thermal management of electronic devices with high-powered density.

Simulation, Modeling, Manufacturing, and Characterization of a Planar Magnetic Face to Face Integrated Transformer

Nowadays, the miniaturization of the passive components is the major challenge in the better integration of electronic circuits in portable devices. This paper presents the simulation, the modeling, the manufacturing, and the characterization of a face to face transformer where conductors are buried in the magnetic layer and where the transformer’s primary and secondary windings are turned in the plane by 45°. The buried conductors allow the inductor magnetizing to be increased by a ratio of 50%. The turn of the transformer’s primary and secondary windings allows the capacitance coupling to be decreased by a ratio of 100%. Simulations are made by using the high-frequency structural simulator, which is 3-D finite-element software. Measurements are performed for frequencies ranging from 40 Hz to 300 MHz by an impedance meter and a vector network analyzer. Good consistency between the simulation and measurement is obtained.

Integrated Reconfigurable Silicon Photonics Switch Matrix in IRIS Project: Technological Achievements and Experimental Results

This paper reports the performances of a silicon photonics optical switch matrix fabricated by using large-scale three-dimensional (3-D) integration. The wavelength selective optical switch consists of a photonic integrated circuit (PIC), with 1398 circuit elements, interconnected in a 3-D stack with its control electronic integrated circuit (EIC). Each PIC element can be trimmed or reconfigured by using metallic heaters. The EIC is designed to drive the heaters and to read the signal of monitor photodiodes integrated into the PIC. Small footprint and high energy efficiency are achieved in the PIC and the EIC. Automatic wavelength alignment of the optical circuits in the PIC to the ITU grid and fine temperature tuning of each photonic element to optimize the switch insertion losses are obtained by an optimization routine. A fully packaged switch with input/output fibers is tested both for optical and electrical characteristics as well as for the system performances. Fiber-to-fiber insertion losses of about 20 dB and channel isolation of −35 dB are achieved. Bit error rate characteristics at 25 Gb/s are evaluated. Perspective applications of the optical switch in optical transport and intra-data center networks are discussed.

Stand for Studying the Effect of Proton Irradiation on Integrated Circuits: Estimation of Particle Fluxes, Activation, and Dose Rate

A stand for the irradiation of electronic integrated circuits is developed at the proton beam of the linear accelerator of the Institute for Nuclear Research, Russian Academy of Sciences. Estimation of secondary neutron fluxes in the experimental hall and in the surrounding medium outside the external shielding of the accelerator is performed. The issue of the impact of albedo protons and neutrons from the beam trap on the irradiated object is considered. The activation and cooling of the stand elements and the irradiated object as well as the dose rate are calculated. The data obtained allow safe operating conditions of the stand and optimal modes of irradiation to be selected. The calculations were carried out by the Monte Carlo method using the SHIELD hadron transport code for proton-beam parameters which are maximal at this time: energy of 209 MeV, current of 1 μA.