Electron Transport Layer Material Research Articles

Performance optimization of FASnI3 based perovskite solar cell through SCAPS-1D simulation

The article provides a detailed look at the fabrication of a high-performance structure for FASnI3-based perovskite solar cells (PSCs). The FTO/CeO2/FASnI3/CuI/Au structure is designed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) to investigate the fabricated PSC's performance. This investigation's main objective is to improve PSCs performance by using non-traditional Hole transport layer (HTL) and Electron transport layer (ETL) materials, such as CeO2 and CuI, which have both been the subject of limited research. Moreover, the investigation seeks to determine the impact of several perovskite layer characteristics, including bandgap (Eg), electron affinity (χ), acceptor density (NA), thickness (t), and defect density (Nt). Additionally, this study also investigates the effect of various back contact work functions. Significant improvements in solar cell parameters, such as power conversion efficiency (PCE) from 22.06% to 24.87% and current density (Jsc) from 26.0274 to 30.675 mA/cm2, were observed by optimizing the device's parameters. In contrast, the fill factor (FF) and open circuit voltage (Voc) decreased their values from 86.13% to 87.10% and 0.9843 to 0.9308 V, respectively. These findings show that our designed solar cell structure performs better than those with conventionally used HTLs and ETLs. Consequently, this study highlights the potential benefits of lead-free PSCs and presents fresh opportunities for their development and use in various solar applications.

Formation of High-Photoresponsivity BaSi2 Films by Radio-Frequency Sputtering and Evaluation of a BaSi2/TiN/Glass Heterojunction by Transmission Electron Microscopy.

Barium disilicide (BaSi2) is a thin-film solar cell material composed of abundant elements, and its application potential is further enhanced by its formation on inexpensive substrates, such as glass. The effect of the substrate temperature on the co-sputtering of BaSi2 and Ba targets to form BaSi2 films on Si(111) and TiN/glass substrates was investigated. Contrary to expectations, the photoresponsivity reached maximum values exceeding 5 and 2 A W-1, respectively, the highest value ever reported for as-deposited samples formed at 750 °C, more than 100 °C higher than those reported previously. Because the photoresponsivity is proportional to carrier lifetime, this result indicates that high-temperature growth can bring out the high performance of BaSi2 as a light-absorbing layer. Because amorphous SiC (a-SiC) has a larger forbidden band gap and electron affinity than BaSi2, it is considered suitable as an electron transport layer (ETL) material for BaSi2 solar cells. On the basis of this, the formation of BaSi2 (absorption layer)/a-SiC (ETL)/TiN (electrode)/glass heterojunctions was also attempted, and the layered structure was examined by cross-sectional transmission electron microscopy (TEM). Polycrystalline BaSi2 films were found to be even on the amorphous layer by TEM. A high photoresponsivity of over 2 A W-1 was obtained. Therefore, the BaSi2/a-SiC/TiN structure provides a guideline for the structural design of BaSi2-based thin-film solar cells on glass.

Design and numerical investigation of Cs2SnI6 vacancy-ordered double perovskite solar cell

Perovskite solar cells (PSCs) represent an emerging technology in solar photovoltaics due to their outstanding optical and electrical characteristics. The urgency of lead-free solar materials has increased due to the environmental concerns. In light of these considerations, Cs2SnI6, a high-performance tin-based double perovskite, holds the potential to be a key absorber material in promoting the cell efficiency. In this paper, a device design of lead-free Cs2SnI6-based PSC is proposed based on an n-i-p planar structure. Through a comprehensive analysis by simulation using SCAPS-1D, the impacts of electron transport layer materials (SnO2, TiO2, CdS, GO, MZO) and hole transport layer materials (MoO3, Cu2O, CuI, Spiro-OMeTAD) with varying thicknesses as well as the donor density, acceptor density and the absorber thickness have been examined. Additionally, an examination is conducted on the performance metrics of PSCs, encompassing Voc, Jsc, FF, and PCE, while taking into consideration the influences of temperature, Rseries, and Rshunt. The results show that the optimized FTO/SnO2/Cs2SnI6/MoO3/Au device presents the highest PCE of 22.60 % at 300 K temperature, together with a visible quantum efficiency of 99.49 %. The appropriate thicknesses of the ETL, HTL, and absorber layer for achieving the optimal performances are 50 nm, 200 nm, and 450 nm, respectively. Also, the donor density and acceptor density for the best efficiency are both at 1018 cm−3. The values of Rseries, and Rshunt are 2 Ω cm2 and 6000 Ω cm2, respectively. This investigation demonstrates that the proposed vacancy-ordered double perovskite Cs2SnI6 solar cell is promising for photovoltaic devices due to the highlighted characteristics and optical parameters.

Exploring the theoretical potential of tungsten oxide (WOx) as a universal electron transport layer (ETL) for various perovskite solar cells through interfacial energy band alignment modulation

Perovskite solar cells (PSCs) play a pivotal role in advancing renewable energy to achieve United Nation's Sustainable Development Goal 7 (SDG 7), which aims to ensure universal access to affordable, sustainable, reliable and modern energy services. Aiming to enhance the performance of PSCs by replacing the typically used electron transport layers (ETLs: TiO2, SnO2, ZnO etc.), we theoretically investigated the viability of tungsten oxide (WOX) as a promising ETL for PSCs. Moreover, the effect of altering the energy levels of WOX on cell performance has also been analyzed through simulation. Initially, 12 (twelve) PSC structures having the combination of different perovskite (PSK: CsPbBr3, CsPbI3, FAPbBr3, FAPbI3) absorber layers with different organic hole transport layers (HTLs: Spiro-OMeTAD, P3HT, PEDOT:PSS) and a fixed ETL of WOX were optimized numerically for comparing their performance. As CsPbBr3-based PSCs showed the best performance, further simulations were performed by varying some WOX/CsPbBr3 interface properties such as interface defect density, conduction band offset (CBO) between WOX and CsPbBr3, energy bandgap (Eg) of WOX etc. Finally, the best-performed PSCs were found for the Eg = 3.5 eV of WOX and the CBO of - 0.5 eV confirming the conduction band minimum (CBM) of WOX is lower than that of CsPbBr3 by 0.5 eV. A properly chosen WOX layer enhanced the efficiency of CsPbBr3-based PSCs up to 14.65 %, 14.52 % and 16.09 %, aproaching the Shockley-Queisser (S-Q) limit (16.37% for CsPbBr3-based solar cell) from the initial values of 11.39 %, 11.27 %, and 12.49 %, respectively. This study ensures WOX is a promising ETL for which a proper PSC structure having a suitable PSK and an HTL can improve cell performance. Moreover, the importance of modifying energy levels of ETL material in enhancing the performance of PSCs is explored. As a result, this study opens a path for the researchers to develop WOX having suitable CBM and Eg, so that it can be well-suited with a properly matched PSK material resulting in enhanced cell performance.

Theoretical insight on electronic and optical properties of some phosphorescent iridium(III) complexes for organic light-emitting diode devices

Organic light-emitting diode (OLED) structures have been extensively investigated because of their potential applications in various fields. It is known that organic or metal-mediated organic compounds are used in the layers of OLEDs. Within OLED materials, iridium(III) compounds have attract much attention owing to their many advantages. Therefore, we predicted the OLED behaviors of twenty-five phosphorescent iridium(III) complexes using theoretical chemical methods. All theoretical calculations were performed with the B3LYP hybrid functional using Gaussian 16 and Amsterdam Modeling Suite 2023 programs. While the 6–31G(d) basis set for non-metal atoms and LANL2DZ basis set for iridium metal was preferred in the computations carried out by using Gaussian program, whereas in the calculations performed with the Amsterdam Modelling Suite program, the TZP basis set was used for all atoms. From the theoretically obtained results, it is seen that Ir6, Ir7, Ir22-Ir25 complexes can be proposed as good candidate for hole injection layer materials in OLED based on indium tin oxide as an anode. Within complexes investigated, it has been determined that Ir16 and Ir17 complexes are the most suitable candidates for electron transport layer materials, whereas Ir16 complex can be used as both a hole transfer layer and ambipolar materials. Furthermore, it has been predicted that Ir4, Ir7, Ir8, and Ir23 complexes could be preferred as hole blocking layer compounds. From the detailed analysis of the singlet-triplet transitions of the complexes studied, it could be said that all iridium(III) complexes investigated could be used as highly efficient phosphorescent OLED molecules.

Effects of opto-electronics properties of CeMnO2 nanoparticles improve the efficiency of CeMnO2/MAFASnBrI3/BaSi2 photovoltaic cells

In this paper, we synthesized manganese-substituted cerium oxide (CeMnO2) electron transport layer (ETL) nanomaterial via the co-precipitation method using various Mn compositions. These variations resulted in significant changes in the physical, optical, electronic, and dielectric properties of the CeMnO2 nanoparticles. The hexagonal structure of the CeMnO2 nanoparticles was validated using X-ray diffraction (XRD). Their morphology and surface characteristics were analyzed through scanning electron microscopy (SEM). Ultraviolet–visible (UV–Vis) spectrophotometry was utilized to explore their optoelectronic properties, revealing an increase in transmittance from 75 % to 90 %, along with corresponding decreases in reflectance and absorbance. Moreover, the energy bandgap (Eg) increased from 3.68 to 3.86 eV, while the Urbach energy (EU) rose from 0.18 to 0.6 eV with varying Mn compositions. The increase in defect quantity is associated with the reduction in both DC and AC conductivity observed with higher Mn compositions. Using a Hall effect instrument, we measured the sheet resistance, Hall mobility (ranging from 35.20 to 62.32 cm2 V−1 s−1), and carrier concentration (from 8.71 × 1018 to 1.22 × 1020 cm−3) of the CeMnO2 nanomaterials. The second stage focused on developing a high-efficiency (CeMnO2/MAFASnBrI3/BaSi2) solar cell based on experimental data from the CeMnO2 ETL and BaSi2 HTL materials. After multiple optimizations of the proposed solar cells, we achieved a 27.73 % efficiency.

Optimizing Geometry and ETL Materials for High-Performance Inverted Perovskite Solar Cells by TCAD Simulation.

Due to the optical properties of the electron transport layer (ETL) and hole transport layer (HTL), inverted perovskite solar cells can perform better than traditional perovskite solar cells. It is essential to compare both types to understand their efficiencies. In this article, we studied inverted perovskite solar cells with NiOx/CH3NH3Pb3/ETL (ETL = MoO3, TiO2, ZnO) structures. Our results showed that the optimal thickness of NiOx is 80 nm for all structures. The optimal perovskite thickness is 600 nm for solar cells with ZnO and MoO3, and 800 nm for those with TiO2. For the ETLs, the best thicknesses are 100 nm for ZnO, 80 nm for MoO3, and 60 nm for TiO2. We found that the efficiencies of inverted perovskite solar cells with ZnO, MoO3, and TiO2 as ETLs, and with optimal layer thicknesses, are 30.16%, 18.69%, and 35.21%, respectively. These efficiencies are 1.5%, 5.7%, and 1.5% higher than those of traditional perovskite solar cells. Our study highlights the potential of optimizing layer thicknesses in inverted perovskite solar cells to achieve higher efficiencies than traditional structures.

Optimization of a CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> based lead-free organic perovskite solar cell using SCAPS-1D simulator

In this study, a CH3NH3SnI3-based perovskite PV cell with the structure (FTO/TiO2/CH3NH3SnI3/Cu2O) was made and optimized by changing the layer thickness, defect density, and doping profile using the solar cell capacitance simulator (SCAPS) 1D simulator. To better understand how the device interface affects carrier dynamics, a synergic optimization of the device is done by altering the electron-transport layer (ETL) and hole-transport layer (HTL) materials. The light glows through the window layer of Sn2O: F, which serves as the transparent conducting oxide layer in our suggested cell construction and then travels over TiO2 as an n-type ETL. Due to its unique features, the p-type perovskite (CH3NH3SnI3) is chosen as the primary absorber layer. Lastly, Cu2O is added as an HTL before the back contact because it has a higher hole conductivity and the proper offsets for spreading the valance and conduction bands. Additionally, Cu2O-based devices outperform frequently utilized spiro-OMeTAD-based devices in terms of efficiency. According to the findings of these simulations, the optimized structure has a power conversion efficiency (PCE) of 41%, an open-circuit voltage of 1.32 V, a short-circuit current density of 34.31 mA/cm2 and a fill factor (FF) of 90.5%. Additionally, the optimized structure has a short-circuit current density of 34.31 mA/cm2.

Naphthalene Diimide-Modified SnO2 Enabling Low-Temperature Processing for Efficient ITO-Free Flexible Perovskite Solar Cells.

A low-cost and indium-tin-oxide (ITO)-free electrode-based flexible perovskite solar cell (PSC) that can be fabricated by roll-to-roll processing shall be developed for successful commercialization. High processing temperatures present a challenge for the PSC fabrication on flexible substrates. The most efficient planar n-i-p PSC structures, which utilize a metal oxide as an electron transport layer (ETL), necessitate high annealing temperatures. In addition, the device performance deteriorates owing to the migration of halogen ions, which causes the oxidation of the metal electrodes. These drawbacks conflict with the development of highly efficient flexible PSCs fabricated on ITO-free transparent electrodes. Herein, an efficient ETL material that enables low-temperature processing is presented. Tin dioxide (SnO2) is modified by (sulfobetaine-N,N-dimethylamino)propyl naphthalene diimide (NDI-B) and used as an ETL. The NDI-B effectively reduces the interfacial nonradiative recombination between the ETL and perovskite and suppresses the ion migration by passivating oxygen-vacancy defects in SnO2 and strongly interacting with halogen ions, respectively. Based on the NDI-B-blended SnO2 ETL, a record PCE of 17.48% is achieved in the ITO-free flexible PSC fabricated at low temperature.

Analysis and design of 25.3% efficient Sb2Se3 solar cells by numerical simulation

Sb2Se3 has a high absorption coefficient of 105 cm−1 in the visible light range, which is an excellent absorber layer material. Currently, a better band alignment between conventional CdS and Sb2Se3 has led to the widespread adoption of CdS as the electron transport layer (ETL) in Sb2Se3 solar cells. However, CdS is toxic, necessitating the exploration of alternative ETL materials that are eco-friendly and possess an appropriate energy band with Sb2Se3. In this study, we endeavor to pioneer an all-inorganic, green solar cell structure of Au/MoS2/Sb2Se3/WS2/ITO by employing MoS2 as the hole transport layer (HTL) and WS2 as the ETL. We primarily optimized Sb2Se3 thickness and its hole doping concentration (NA) by SCAPS-1D numerical simulation. Based on the analysis of built-in electric field and carrier recombination rate along Sb2Se3, the optimal thickness and NA ranges of Sb2Se3 are determined, which are 0.9–1.1 μm and 1016-1018 cm−3 respectively. Through a series of optimization, the structure achieves the highest power conversion efficiency (PCE) of about 25.3 % in the current simulation of Sb2Se3 solar cells. After comparing the novel WS2 ETL with the conventional CdS ETL, we find that WS2 has a larger built-in potential (Vbi) and charge recombination resistance (Rrec). In addition, from the analysis of energy band structure, the spike-like band at Sb2Se3/WS2 interface can effectively inhibit the carrier recombination, which makes the device obtain a larger open circuit voltage (VOC) of 0.69 V. This study can provide theoretical reference for the development of non-toxic and efficient Sb2Se3 solar cells.

Modified SnO2 Electron Transport Layer by One‐Step Doping with Histidine in Perovskite Solar Cells

Tin dioxide (SnO2), one of the best electron transport layer materials for perovskite solar cells (PSCs), has high electrical conductivity and low photocatalytic activity. However, the defects in its inside and surface result in nonradiative recombination at the SnO2/perovskite interface. Complex and time‐consuming passivation methods are not conducive to the commercialization of PSCs, and simple passivation strategies should be used to improve the photovoltaic performance of the devices. Herein, a facile and efficient method is proposed to simultaneously passivate the inside and surface defects by adding histidine (HIS) to SnO2 colloidal solution. This one‐step doping strategy also modulates carrier dynamics at the SnO2/perovskite interface. HIS reduces suspended hydroxyl groups, oxygen vacancies, and uncoordinated Sn4+ defects on the surface of SnO2, as well as uncoordinated Pb2+ and halogen vacancy defects at the buried interface of perovskite. Surprisingly, HIS can prevent perovskite from decomposition to form PbI2, which further decomposes to photoactive metallic Pb0 and I, causing ion migration in PSC. As a result, the PSC efficiency has significantly improved 23.11% after HIS doping. The efficiency of unencapsulated device with HIS is 94% of the primary efficiency after storage in relative humidity = 70 ± 5% for 1000 h.

Effect of Al Dope with ZnO Electron Transport Layer in Perovskite Solar Cells Using SCAPs 1-D Simulation

Perovskite solar cells have shown exceptional performance and significant advancements in solar cell efficiency. For perovskite solar cells to conduct electrons and generate current, one of the key components is the substance known as the electron transport layer (ETL). Using the SCAPS 1D modelling program, ZnO: Al was used in this instance as the ETL material in a perovskite solar cell. Because of its interaction with the perovskite material, the ZnO: Al ETL demonstrated high cell efficiency. The performance of the ZnO: Al-doped-based solar cell achieved a PCE as high as 23.5%. In the meanwhile, the greatest cell performance in terms of enhancing the charge transport mechanism and raising cell efficiency was shown by perovskite solar cells doping the ETL with Al and having the right layer thickness. Thus, throughout the manufacturing process, the parameters used in this study may serve as a guide.

An Overview of Electron Transport Layer Materials and Structures for Efficient Organic Photovoltaic Cells

The electron transport layer (ETL) has gained significant attention recently for its essential role in facilitating charge extraction, transportation, and reducing recombination in photovoltaic cells. Organic photovoltaics (OPVs) with ETLs have achieved remarkable efficiencies exceeding 19%, and indoor OPVs have reached a peak efficiency of 29.4% under 3000 LX illumination. Despite these accomplishments, the difficulties in choosing appropriate ETLs for contact alignment have constrained device performance. This review comprehensively overviews the latest advancements in ETL materials used in conventional and inverted OPVs. Additionally, it investigates the evolution of dopant materials, emphasizing the need for improved electron mobility, energy level alignment, and surface passivation treatment of the buffer layer and absorber layers in OPVs. Continual studies of transport materials and the potential utilization of doping or multilayer ETLs are suggested as inevitable research toward achieving higher power conversion efficiency and stability in OPV technology. Additionally, identifying optimal ETL materials capable of synergistic interactions remains crucial for sustained progress in renewable energy technology.

2D Dion Jacobson/3D perovskite heterojunction solar cells without hole transport layer: Further optimize the performance by SCAPS-1D

The global energy demand is steadily increasing, prompting a widespread focus on renewable energy sources such as solar, wind, hydro, and biomass. Perovskite solar cells (PSCs) have gained considerable attention due to their remarkably high power conversion efficiency (PCE). The Dion-Jacobson (DJ) type two-dimensional layered perovskite material, lacking interlayer van der Waals interaction, enhances device stability significantly. Simultaneously, the heterojunction structure formed by MAPbI3 improves power conversion efficiency (PCE) while maintaining high stability. This study employs 2D Dion Jacobson/3D perovskite heterojunction solar cells for further optimization through simulation analysis using SCAPS-1D (Solar Cells capacitance simulator). The intrinsic impact of heterojunction perovskite solar cells is identified, and appropriate physical parameters are adjusted to approximate experimental results. Optimization variables include absorption layer thickness, absorption layer band gap, interface defect layer thickness, back contact material, and electron transport layer material, all influencing device performance differently. Determining the ideal absorption layer thickness based on absorption characteristics, a hole-free transport layer structure is adopted in this work to reduce production costs and process complexity. To enhance the responsiveness of DJ type two-dimensional layered perovskite materials to various light wavelengths and improve PCE, the simulation employs 3D graphics to optimize variables such as the absorption layer's band gap. The highest PCE achieved is 27.42 %. Additionally, the study explores device performance in a low-temperature operating environment (265 ∼ 325 K). At 265 K, the PCE and fill factor (FF) are 29.37 % and 85.45 %, respectively, indicating that 2D Dion Jacobson/3D perovskite heterojunction solar cells exhibit structural stability and high efficiency at low temperatures compared to other PSCs. These findings suggest promising practical applications in the fields of photovoltaics and optoelectronics.

Recent Advances in Metal Oxide Electron Transport Layers for Enhancing the Performance of Perovskite Solar Cells.

Perovskite solar cells (PSCs) have attracted considerable interest owing to their low processing costs and high efficiency. A crucial component of these devices is the electron transport layer (ETL), which plays a key role in extracting and transmitting light-induced electrons, modifying interfaces, and adjusting surface energy levels. This minimizes charge recombination in PSCs, a critical factor in their performance. Among the various ETL materials, titanium dioxide (TiO2) and tin dioxide (SnO2) stand out due to their excellent electron mobility, suitable band alignment, high transparency, and stability. TiO2 is widely used because of its appropriate conduction band position, easy fabrication, and favorable charge extraction properties. SnO2, on the other hand, offers higher electron mobility, better stability under UV illumination, and lower processing temperatures, making it a promising alternative. This paper summarizes the latest advancements in the research of electron transport materials, including material selection and a discussion of electron collection. Additionally, it examines doping techniques that enhance electron mobility and surface modification technologies that improve interface quality and reduce recombination. The impact of these parameters on the performance and passivation behavior of PSCs is also examined. Technological advancements in the ETL, especially those involving TiO2 and SnO2, are currently a prominent research direction for achieving high-efficiency PSCs. This review covers the current state and future directions in ETL research for PSCs, highlighting the crucial role of TiO2 and SnO2 in enhancing device performance.

P‐129: The Black Spot Phenomenon and Improvement in QLED Devices

In this paper, we studied the influence of ETL (electron transporting layer)and cathode material type as well as their interface on the performance of QLED (quantum dot light emitting devices). Through our research, we found that the black spot phenomenon of QLED device is strongly related to ETL material, and the number of black spots can be greatly reduced by improve ETL. In addition, the cathode material such as Ag and Al, also show their impact on black spots; Finally, one novel double‐layer ETL structure device was developed to avoid black spot, which manifest that the interaction between ETL and the electrode interface also play an important role. The absence of black spots in inverted devices also proves this conclusion.

Zinc and [Zinc, Nickel]: Co‑doped SnO2 nanoparticles as prospective electron transport layer materials for efficient lead free-MASnI3 perovskite solar cells

In this study, we explore the potential of both pristine and doped tin oxide (SnO2) as promising materials as the electron transport layer (ETL) for efficient lead free-methylammonium tin iodide (MASnI3) perovskite solar cells (PSCs). The pristine, Zinc (Zn) doped, and Nickel (Ni)-Zn co-doped SnO2 nanoparticles with a constant concentration of Zn while changing the concentration of Ni were synthesized by using the hydrothermal method. The effect of doping and co-doping on optical, structural, and electrical properties of SnO2 nanoparticles was investigated using different microscopic and spectroscopic tools. The X-ray diffractograms showed that pristine, doped, and co-doped SnO2 nanoparticles have better crystallinity and tetragonal rutile crystal structure. The fingerprint functional groups and elemental composition were confirmed by FTIR absorption peaks, EDX, and XPS, respectively. The UV–Vis DRS spectroscopy results revealed that the optical band gap reduced from 2.90 eV for pristine SnO2 to 2.26 eV for co-doped 1 wt (wt) % Ni-Zn-SnO2 nanoparticles and can be tuned with a variation of wt % of Ni. Further, the photoluminescence emissions of all SnO2 nanoparticles in the range of 307 to 494 nm are related to oxygen vacancies or defects. Moreover, BET results confirms larger surface area for 1 wt % Ni-Zn-SnO2, which can help in better electron-hole pair separation. The electrical conductivity studies confirm that the synthesized nanoparticles exhibit excellent ohmic contact behavior and show a notable increase in electrical conductivity for 1 wt% Ni-Zn-SnO2 nanoparticles. Further, the suitability of both pristine and doped SnO2 as ETL material for the MASnI3-based PSCs was simulated using SCAPS-1D software. The best power conversion efficiency of 29.60 % was achieved for FTO/1 wt % Ni-Zn-SnO2/MASnI3/Spiro-OMeTAD/Au. This investigation highlights the potential of co-doped materials as promising candidates for the development of efficient PSCs.

“Mutually Doped” Conjugated Polyelectrolyte‐Polyoxometalate Complex as Hole Transporting Material for Efficient Organic Solar Cells

Comprehensive SummaryCompared to electron transporting layer materials, the species and numbers of hole transporting layer (HTL) materials for organic solar cells (OSCs) are rare. The development of HTL materials with excellent hole collection ability and non‐corrosive nature is a long‐standing issue in the field of OSCs. Herein, we designed and synthesized a series of conjugated polyelectrolytes (CPEs) with continuously varied energy levels toward HTL materials for efficient OSCs. Through a “mutual doping” treatment, we obtained a CPE composite PCT‐F:POM with a WF of 5.48 eV and a conductivity of 1.56 х 10–3 S/m, meaning that a good hole collection ability can be expected for PCT‐F:POM. The OSC modified by PCT‐F:POM showed a high PCE of 18.0%, which was superior to the reference device with PEDOT:PSS. Moreover, the PCT‐F:POM‐based OSC could maintain 91% of the initial PCE value after storage of 20 d, meaning that the long‐term stability of OSCs is improved by incorporating the PCT‐F:POM HTL. In addition, PCT‐F:POM possesses good compatibility with large‐area processing technique; i.e., a PCT‐F:POM HTL was processed by the blade‐coating method for fabricating 1 cm2 OSC, and a PCE of 15.1% could be achieved. The results suggest the promising perspective of PCT‐F:POM in practical applications.

Recent Advances in the Photonic Curing of the Hole Transport Layer, the Electron Transport Layer, and the Perovskite Layers to Improve the Performance of Perovskite Solar Cells.

Perovskite solar cells (PSCs) have attracted increasing research interest, but their performance depends on both the choice of materials and the process used. The materials can typically be treated in solution, which makes them well suited for roll-to-roll processing methods, but their deposition under ambient conditions requires overcoming some challenges to improve stability and efficiency. In this review, we highlight the latest advancements in photonic curing (PC) for perovskite materials, as well as for hole transport layer (HTL) and electron transport layer (ETL) materials. We present how PC parameters can be used to control the optical, electrical, morphological, and structural properties of perovskite HTL and ETL layers. Emphasizing the significance of these advancements for perovskite solar cells could further highlight the importance of this research and underline its essential role in creating more efficient and sustainable solar technology.

Design and optimization of Cs2SnI6 based inorganic perovskite solar cell model: numerical simulation

To overcome the drawbacks of high lead toxicity and poor corrosion resistance of lead-based perovskite solar cells (PSCs), and to compensate for the poor air stability of Sn2+ compound-based perovskite, Cs2SnI6 (Sn4+ compound) is selected as the absorber for the PSC in this study. Using FTO/ETL/Cs2SnI6/HTL/Au as the model, the high-performance non-toxic inorganic PSC structure is explored through theoretical simulation and calculation by SCAPS-1D. The conduction band offsets (CBO) and valence band offsets (VBO) of commonly used electron transport layer materials (ETMs), hole transport layer materials (HTMs), and Cs2SnI6 are calculated based on electron affinity potential (χ) and bandgap (E g ). Then, by analyzing the pn junction composed of ETL and HTL and the bandgap structure at the n-i, i-p interfaces, the most matching n-i-p planar heterojunction model, FTO/IGZO/Cs2SnI6/Cu2BaSnS4/Au, was selected. Finally, by analyzing and adjusting the material thickness, defect density of each layer, operation temperature, the optimal performance of PSC was determined to be 30.39% power conversion efficiency (PCE), 1.27 V open circuit voltage (V oc ), 28.46 mA cm−2 short circuit current (J sc ), and 84.02% fill factor (FF). A new and more efficient PSC is proposed in this study, providing some terrific clues for finding high-quality alternatives to lead-based PSCs.