Electron Spins In Semiconductors Research Articles

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor.

Electrical generation and transduction of polarized electron spins in semiconductors (SCs) are of central interest in spintronics and quantum information science. While spin generation in SCs is frequently realized via electrical injection from a ferromagnet (FM), there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), the efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer (SAM) of chiral molecules (α-helix l-polyalanine, AHPA-L), is demonstrated. The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional SC. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free SC spintronics.

High-fidelity entangling gate for double-quantum-dot spin qubits

Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 109 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.

Colloquium: Persistent spin textures in semiconductor nanostructures

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered in such a way that persistent spin structures with extraordinarily long spin lifetimes arise even in the presence of disorder and imperfections. We review experimental and theoretical developments on this subject both for $n$-doped and $p$-doped structures, and we discuss possible device applications.

Large Stark tuning of donor electron spin qubits in germanium

Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative to the crystal axes and external magnetic field. When the Stark shift is maximized, the spin-orbit Stark parameter is four orders of magnitude larger than in silicon. At select orientations a hyperfine Stark effect was also resolved and is an order of magnitude larger than in silicon. We report the Stark parameters for $^{75}$As and $^{31}$P donor electrons and compare them to the available theory. Our data reveal that $^{31}$P donors in germanium can be tuned by at least four times the ensemble linewidth making germanium an appealing new host material for spin qubits that offers major advantages over silicon.

Quadrupolar and anisotropy effects on dephasing in two-electron spin qubits in GaAs.

Understanding the decoherence of electron spins in semiconductors due to their interaction with nuclear spins is of fundamental interest as they realize the central spin model and of practical importance for using them as qubits. Interesting effects arise from the quadrupolar interaction of nuclear spins with electric field gradients, which have been shown to suppress diffusive nuclear spin dynamics and might thus enhance electron spin coherence. Here we show experimentally that for gate-defined GaAs quantum dots, quadrupolar broadening of the nuclear Larmor precession reduces electron spin coherence by causing faster decorrelation of transverse nuclear fields. However, this effect disappears for appropriate field directions. Furthermore, we observe an additional modulation of coherence attributed to an anisotropic electronic g-tensor. These results complete our understanding of dephasing in gated quantum dots and point to mitigation strategies. They may also help to unravel unexplained behaviour in self-assembled quantum dots and III–V nanowires.

Optoelectronic spin memories of electrons in semiconductors

We optically generate electron spins in semiconductors and apply an external magnetic field perpendicularly to them. Time-resolved photoluminescence measurements, pumped with a circularly polarized light, are performed to study the spin polarization and spin memory times in the semiconducting host. The measured spin polarization is found to be an exponential decay with the time delay of the probe. It is also found that the spin memory times, extracted from the polarization decays, enhance with the strength of the external magnetic field. However, at higher fields, the memory times get saturated to sub-{\mu}s because of the coupling for interacting electrons with the local nuclear field.

All-electric all-semiconductor spin field-effect transistors.

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.

Microwave Manipulation of Electrically Injected Spin-Polarized Electrons in Silicon

Spintronics carry the potential to dramatically improve processing speeds and densities in future computing devices. This technology relies on manipulating electron spins in semiconductors, and in this paper it is shown that this manipulation can be sensitively performed using microwave excitation. This provides the potential for providing unprecedented clarity of the temporal spin dynamics in these systems.

Optical Spectroscopy of Spin Noise

Spontaneous fluctuations of the magnetization of a spin system in thermodynamic equilibrium (spin noise) manifest themselves as noise in the Faraday rotation of probe light. We show that the correlation properties of this noise over the optical spectrum can provide clear information about the composition of the spin system that is largely inaccessible for conventional linear optics. Such optical spectroscopy of spin noise, e.g., allows us to clearly distinguish between optical transitions associated with different spin subsystems, to resolve optical transitions that are unresolvable in the usual optical spectra, to unambiguously distinguish between homogeneously and inhomogeneously broadened optical bands, and to evaluate the degree of inhomogeneous broadening. These new possibilities are illustrated by theoretical calculations and by experiments on paramagnets with different degrees of inhomogeneous broadening of optical transitions [atomic vapors of 41K and singly charged (In,Ga)As quantum dots].

Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field

We present the design and operation of a fiber-based cryogenic confocal microscope. It is designed as a compact cold-finger that fits inside the bore of a superconducting magnet, and which is a modular unit that can be easily swapped between use in a dilution refrigerator and other cryostats. We aimed at application in quantum optical experiments with electron spins in semiconductors and the design has been optimized for driving with and detection of optical fields with well-defined polarizations. This was implemented with optical access via a polarization maintaining fiber together with Voigt geometry at the cold finger, which circumvents Faraday rotations in the optical components in high magnetic fields. Our unit is versatile for use in experiments that measure photoluminescence, reflection, or transmission, as we demonstrate with a quantum optical experiment with an ensemble of donor-bound electrons in a thin GaAs film.

Optical spin generation/detection and spin transport lifetimes

Abstract We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Dephasing of optically generated electron spins in semiconductors

Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub- μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

Hole spin precession in semiconductors: Clifford algebra approach

Recently the Clifford (geometrical) algebra was addressed to describe dynamical properties of electron spin in semiconductors (Dargys 2009 Phys. Scr. 79 055702). In this paper, the Clifford algebra is used to investigate heavy and light hole spins in valence bands of cubic semiconductors. Owing to strong spin–orbit interaction in the valence band, the precession trajectories of hole spin polarization are ellipses, or even lines, rather than circles as usually found in the case of electrons. The paper shows how one can investigate the valence band spectrum and free-hole spin precession trajectories within a framework of the Clifford algebra Cl4, 1. General formulae that describe free heavy- and light-mass hole spin precession are presented.

Electrical creation of spin polarization in silicon at room temperature

The control and manipulation of the electron spin in semiconductors is central to spintronics, which aims to represent digital information using spin orientation rather than electron charge. Such spin-based technologies may have a profound impact on nanoelectronics, data storage, and logic and computer architectures. Recently it has become possible to induce and detect spin polarization in otherwise non-magnetic semiconductors (gallium arsenide and silicon) using all-electrical structures, but so far only at temperatures below 150 K and in n-type materials, which limits further development. Here we demonstrate room-temperature electrical injection of spin polarization into n-type and p-type silicon from a ferromagnetic tunnel contact, spin manipulation using the Hanle effect and the electrical detection of the induced spin accumulation. A spin splitting as large as 2.9 meV is created in n-type silicon, corresponding to an electron spin polarization of 4.6%. The extracted spin lifetime is greater than 140 ps for conduction electrons in heavily doped n-type silicon at 300 K and greater than 270 ps for holes in heavily doped p-type silicon at the same temperature. The spin diffusion length is greater than 230 nm for electrons and 310 nm for holes in the corresponding materials. These results open the way to the implementation of spin functionality in complementary silicon devices and electronic circuits operating at ambient temperature, and to the exploration of their prospects and the fundamental rules that govern their behaviour.

Nuclear spins as quantum memory in semiconductor nanostructures

We theoretically consider solid state nuclear spins in a semiconductor nanostructure environment as long-lived, high-fidelity quantum memory. In particular, we calculate, in the limit of a strong applied magnetic field, the fidelity versus time of P donor nuclear spins in random bath environments of Si and GaAs, and the lifetime of excited intrinsic spins in polarized Si and GaAs environments. In the former situation, the nuclear spin dephases due to spectral diffusion induced by the dipolar interaction among nuclei in the bath. We calculate the decay of nuclear spin quantum memory in the context of Hahn and Carr-Purcell-Meiboom-Gill (CPMG) refocused spin echoes using a formally exact cluster expansion technique which has previously been successful in dealing with electron spin dephasing in a solid state nuclear spin bath. With decoherence dominated by transverse dephasing (T2), we find it feasible to maintain high fidelity (losses of less than 10^{-6}) quantum memory on nuclear spins for times of the order of 100 microseconds (GaAs:P) and 1 to 2 milliseconds (natural Si:P) using CPMG pulse sequences of just a few (~2-4) applied pulses. We also consider the complementary situation of a central flipped intrinsic nuclear spin in a bath of completely polarized nuclear spins where decoherence is caused by the direct flip-flop of the central spin with spins in the bath. Exact numerical calculations that include a sufficiently large neighborhood of surrounding nuclei show lifetimes on the order of 1-5 ms for both GaAs and natural Si. Our calculated nuclear spin coherence times may have significance for solid state quantum computer architectures using localized electron spins in semiconductors where nuclear spins have been proposed for quantum memory storage.

Experimental observation of the spin-Hall effect in a spin–orbit coupled two-dimensional hole gas

Electrically induced ordering and manipulation of electron spins in semiconductors has a number of practical advantages over the established techniques using circularly polarized light sources, external magnetic fields and spin injection from a ferromagnet. The spin-Hall effect utilizes spin–orbit coupling to induce edge spin accumulation in response to a longitudinal electric field which can be applied locally and lead to low energy consumption devices. We study spin accumulation near the edge of a weakly disordered two-dimensional hole gas (2DHG) in a GaAs/AlGaAs heterostructure where the magnitude of the transverse spin current approaches the intrinsic, disorder independent value, in contrast to the impurity dominated regime observed in 3D electron doped systems. In our experiment, the induced spin polarization is detected by the electroluminescence resulting from two p–n junctions bordering the 2DHG channel. When an electric field is applied across the 2DHG channel, a non-zero out-of-plane component of the spin is optically detected. The sign of the spin depends on the direction of the field and is opposite for the two edges, consistent with theory predictions. We also report and analyze an in-plane spin-polarization effect induced in the device by asymmetric electron–hole recombination.

Exact solution of qubit decoherence models by a transfer matrix method

We present a method for the solution of the behavior of an ensemble of qubits in a random time-dependent external field. The forward evolution in time is governed by a transfer matrix. The elements of this matrix determine the various decoherence times. The method provides an exact solution in cases where the noise is piecewise constant in time. We show that it applies, for example, to a realistic model of decoherence of electron spins in semiconductors. Results are obtained for the nonperturbative regimes of the models, and we see a transition from weak relaxation to overdamped behavior as a function of noise anisotropy.

Global control and fast solid-state donor electron spin quantum computing

We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio $T_{2}/T_{ops}$ approaching the $10^{6}$ level.

Nonradiative recombination and kinetics of optically oriented electrons at the GaAs/AlGaAs interface

It is shown that optical orientation of electron spins in semiconductors can be used as a basis to develop a high-sensitivity method for measuring the dependence of the lifetime of carriers on their concentration. Experiments performed in a stationary regime on a GaAs/AlGaAs heterostructure at low excitation levels provided insight into the nonradiative recombination of electrons and holes separated by an electric field built into the interface.

ULTRAFAST MANIPULATION OF ELECTRON SPIN COHERENCE IN QUANTUM WELLS

A recently developed technique is reviewed with the potential for all-optical coherent control over electron spins in semiconductors. In these experiments, ultrafast laser pulses "tip" electron spins by generating effective magnetic fields via the optical Stark effect. Measurements of Stark shifts have provided estimates of the net tipping angle as a function of tipping pulse energy, intensity, and polarization. Background contributions to the measured tipping angle arise from the undesirable excitation of additional carriers by the tipping pulse.