Electron-phonon Interaction Research Articles

Theory of acoustic-phonon involved exciton spin flip in perovskite semiconductors

We present a theory of the acoustic phonon assisted spin-flip Raman scattering (SFRS), or resonant photoluminescence with the spin flip of a photoexcited exciton localized in a bulk cubic-phase perovskite semiconductor. We consider the spin-flip transitions between the ground-state exciton spin sublevels in external magnetic field B and discuss the variation of their probability rate and polarization selection rules with the increase of B. The transitions are treated as two-quantum processes with the virtual to and fro transfer of the electron in the electron-hole pair between the bottom and first excited conduction bands. The transfer occurs due to both the electron-hole exchange interaction and the electron-phonon interaction. The theoretical results allow one to distinguish the phonon assisted Raman scattering from (a) the resonant Raman scattering with the combined spin flip of the localized resident electron and hole and (b) the biexciton-mediated SFRS analyzed previously.

Quantum-Acoustical Drude Peak Shift.

Quantum acoustics-a recently developed framework parallel to quantum optics-establishes a nonperturbative and coherent treatment of the electron-phonon interaction in real space. The quantum-acoustical representation reveals a displaced Drude peak hiding in plain sight within the venerable Fröhlich model: the optical conductivity exhibits a finite frequency maximum in the far-infrared range and the dc conductivity is suppressed. Our results elucidate the origin of the high-temperature absorption peaks in strange or bad metals, revealing that dynamical lattice disorder steers the system towards a non-Drude behavior.

Data-Driven Compression of Electron-Phonon Interactions

First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e−ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e−ph interactions, existing interpolation techniques leverage locality in real space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we show an efficient way to compress e−ph interactions based on singular value decomposition (SVD), a widely used matrix and image compression technique. Leveraging (un)constrained SVD methods, we accurately predict material properties related to e−ph interactions—including charge mobility, spin relaxation times, band renormalization, and superconducting critical temperature—while using only a small fraction (1%–2%) of the interaction data. These findings unveil the hidden low-dimensional nature of e−ph interactions. Furthermore, they accelerate state-of-the-art first-principles e−ph calculations by about 2 orders of magnitude without sacrificing accuracy. Our Pareto-optimal parametrization of e−ph interactions can be readily generalized to electron-electron and electron-defect interactions, as well as to other couplings, advancing quantitative studies of condensed matter. Published by the American Physical Society 2024

Non-thermal phonon dynamics and a quenched exciton condensate probed by surface-sensitive electron diffraction

Interactions among and between electrons and phonons steer the energy flow in photo-excited materials and govern the emergence of correlated phases. The strength of electron–phonon interactions, decay channels of strongly coupled modes and the evolution of three-dimensional order are revealed by electron or X-ray pulses tracking non-equilibrium structural dynamics. Despite such capabilities, the growing relevance of inherently anisotropic two-dimensional materials and functional heterostructures still calls for techniques with monolayer sensitivity and, specifically, access to out-of-plane phonon polarizations. Here, we resolve non-equilibrium phonon dynamics and quantify the excitonic contribution to the structural order parameter in 1T-TiSe2. To this end, we introduce ultrafast low-energy electron diffuse scattering and trace strongly momentum- and fluence-dependent phonon populations. Mediated by phonon–phonon scattering, a few-picosecond build-up near the zone boundary precedes a far slower generation of zone-centre acoustic modes. These weakly coupled phonons are shown to substantially delay overall equilibration in layered materials. Moreover, we record the surface structural response to a quench of the material’s widely investigated exciton condensate, identifying an approximate 30:70 ratio of excitonic versus Peierls contributions to the total lattice distortion in the charge density wave phase. The surface-sensitive approach complements the ultrafast structural toolbox and may further elucidate the impact of phonon scattering in numerous other phenomena within two-dimensional materials, such as the formation of interlayer excitons in twisted bilayers.

Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition.

We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.

Внезонное поглощение электромагнитного излучения электронами с оптическим фононным участием в сверхрешетках квантовых точек

Physics Institute of Azerbaijan National Academy of Sciences In this paper, we investigate the absorption of electromagnetic radiation by a free electron gas interacting with lattice vibrations in a quantum dot superlattice. It is assumed that the electron gas in the quantum dot superlattice is limited by the anisotropic parabolic potential. The absorption of light by free carriers with the participation of phonons is calculated in the second order of the perturbation theory. When calculating the absorption coefficient, the matrix elements of the electron-photon and electron-phonon interactions (with polar and nonpolar optical phonons) are used. We can expect three possible transitions in the absorption coefficient for electron-polar phonon scattering: (1) a transition due to the size subband levels for only the x direction, (2) a transition due to the size subband levels for only the y direction and (3) a transition due to the size subband levels for both the x direction and the y direction. For electron-nonpolar phonon scattering we can expect оnly one possible transitions in the, the absorption coefficient: a transition due to the size subband levels for both the x direction and the y direction.

Bonding properties and superconductivity of electride Be6C under moderate pressure

Superconducting electrides are characterized by the emergence of electrons occupying the interstitial region of lattice and exhibit coexistence of distinctive electride state and superconductivity, which have attracted wide attention. However, the underlying crucial factors governing the superconductivity and influencing the structural stability by electride states remain elusive. Here, we performed structure searches in conjunction with first-principles calculations to identify a dynamically stable electride Be6C at 40 GPa, which exhibits p-orbital type electride states and demonstrates superconductivity with a Tc of 22.4 K. Furthermore, it remains dynamically stable even down to ambient conditions while maintaining a Tc of 18.9 K. Further analyses unveiled that the dual p-hybridized electrons within the orbitals of p-orbital electride states and Be-2p mainly composed of a van Hove singularity near the Fermi level and participate in electron–phonon interaction to form Cooper pairs leading to the high-Tc. The preservation of dynamic stability for Be6C at low pressure is primarily attributed to the presence of electride states that effectively form both covalent and ionic bonding properties to bind neighbor Be cations to lower enthalpy of system and subsequently, in turn, lowering the required pressure. Our findings not only explained the underlying factors affecting superconductivity but also revealed the crucial role of electride states in determining the dynamic stability of structure, providing valuable insights for subsequent research on superconducting electrides at low pressures.

Distinguishing Quasiparticle-Phonon Interactions by Ultrahigh-Resolution Lifetime Measurements.

We present a determination of quasiparticle-phonon interaction strengths at surfaces through measurements of phonon spectra with ultrahigh energy resolution. The lifetimes of low energy surface phonons on a pristine Ru(0001) surface were determined over a wide range of temperatures and an analysis of the temperature dependence enables us to attribute separate contributions from electron-phonon interactions, phonon-phonon interactions, and defect-phonon interactions. Strong electron-phonon interactions are evident at all temperatures and we show they dominate over phonon-phonon interactions below 400K.

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

Probing the origin of abnormally strong electron-phonon interaction in phonon transport of semiconductor C3B monolayer

Recently, the two-dimensional semiconductor C3B monolayer has attracted much attention owing to its excellent physical, optical, and electronic properties. In this work, the origin of electron-phonon interaction (EPI) on the thermal properties of C3B by n-type and p-type doping is systematically investigated via first-principles calculations to provide fundamental knowledge for the thermal management the C3B-based electronic devices. The carrier concentrations for the largest reduction of the lattice thermal conductivity (κ) appear at 4 × 1014 cm−2 for n-type and 9 × 1014 cm−2 for p-type, which is closely related to the electron density of states (DOS). The boron (B) atoms break the structural symmetry and induce mass disorder scattering, which renders C3B more prone to the influence of EPI. Moreover, the electronic band structure in the C3B monolayer exhibits multivalley characteristics, which leads to an intervalley scattering. It is worth noting that the anisotropy in the C3B monolayer can be significantly enhanced by EPI. Additionally, an abnormal phenomenon of strong electron-phonon scattering but low electron-phonon coupling strength is found in C3B monolayer, which indicates that large electron-phonon coupling strength is sufficient but not necessary for strong electron-phonon scattering.

The coexistence and competition of charge-density wave and superconductivity in the electron-doped H- MX2 (M = Mo, W and X=S, Se)

In the group VI transition metal dichalcogenides (TMDs), an insulator family with two-dimensional structure, MoS2 has recently demonstrated to be involved in charge-density wave (CDW) and superconductivity (SC). Nevertheless, there is a lack of a cohesive theoretical framework and fragmentation in the existing theoretical models of the relationship between CDW and SC for this system. Base on first-principles calculations, the effects of electron doping on the electronic properties, electron-phonon interaction and SC are investigated comprehensively for monolayer H- MX2 (M = Mo, W and X = S, Se) here. We confirmed that two CDW phases, 23×23 and 2 × 2, are originated from Fermi surface nesting (FSN) and electron-phonon coupling (EPC), respectively. A complicated phase diagram of doping concentration dependencies of CDW and SC critical temperatures (TC) is created, by SC coexisting with 23×23 CDW phase while competing with 2 × 2 CDW phase. The physical mechanisms of such coexistence and competition are also explained here. Our results extend the theoretical investigation by providing a comprehensive and in-depth analysis of CDW and SC in the group VI TMDs, and open up an alternative path for the exploration and regulation of collective phases of two-dimensional materials.

Dynamic strain coupling driven by structural phase transition in mixed-dimensional 2H-MoS2/VO2 van der Waals heterointerfaces

Mixed-dimensional van der Waals (vdW) heterostructures, integrated two-dimensional (2D) atomic crystals with three-dimensional (3D) functional materials, offer a powerful means to manipulating physical properties and generating unprecedented functionalities. Understanding interfacial couplings at those hetero (homo)-interfaces is indispensable for exploring new optical and electronic devices. Herein, we investigated dynamically phase-transition-driven strain coupling across a vdW heterointerface through integrating 2D layered 2H-MoS2 nanoflakes onto 3D phase-change VO2 epitaxial thin films. The Raman peak positions of the in-plane and out-of-plane vibration modes E2g1 and A1g from the 2H-MoS2 nanoflakes show a phonon softening and reversible hysteresis loop as a function of temperature in this mixed-dimensional vdW 2H-MoS2/(1¯11)-VO2/(11¯02)-Al2O3 heterostructure, originating from the co-action of temperature-dependent anharmonicity in 2H-MoS2 and reversible structural phase transition (SPT)-induced in-plane tensile strain from the VO2 thin film. Accordingly, the integrated Raman scattering intensity of these two feature peaks of the 2H-MoS2 nanoflakes increased (decreased) as the temperature increased (decreased), exhibiting a hysteresis loop in the SPT and metal–insulator transition region of VO2. Additionally, the peak integrated intensity enhancement ratio of the E2g1 and A1g vibration modes was approximately 2.3 and 2.8, respectively. These results indicate that the dynamically SPT-driven in-plane tensile strain from the bottom VO2 layer interfacially couples with the adjacent 2H-MoS2 nanoflakes and results in a reduction in the electronic transition energy, leading to an enhancement in the Raman scattering intensity of 2H-MoS2. Our work holds promise for dynamic strain control of lattice dynamics and electron–phonon interaction of 2D materials for functional electronic and photoelectronic devices.

Critical assessment of G0W0 calculations for 2D materials: the example of monolayer MoS2

Two-dimensional (2D) materials combine many fascinating properties that make them more interesting than their three-dimensional counterparts for a variety of applications. For example, 2D materials exhibit stronger electron-phonon and electron-hole interactions, and their energy gaps and effective carrier masses can be easily tuned. Surprisingly, published band gaps of several 2D materials obtained with the GW approach, the state-of-the-art in electronic-structure calculations, are quite scattered. The details of these calculations, such as the underlying geometry, the starting point, the inclusion of spin-orbit coupling, and the treatment of the Coulomb potential can critically determine how accurate the results are. Taking monolayer MoS2 as a representative material, we employ the linearized augmented planewave + local orbital method to systematically investigate how all these aspects affect the quality of G0W0 calculations, and also provide a summary of literature data. We conclude that the best overall agreement with experiments and coupled-cluster calculations is found for G0W0 results with HSE06 as a starting point including spin-orbit coupling, a truncated Coulomb potential, and an analytical treatment of the singularity at q = 0.

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Rigid CuInS2/ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes.

CuInS2 (CIS) quantum dots (QDs) represent an important class of colloidal materials with broad application potential, owing to their low toxicity and unique optical properties. Although coating with a ZnS shell has been identified as a crucial method to enhance optical performance, the occurrence of cation exchange has historically resulted in the unintended formation of Cu-In-Zn-S alloyed QDs, causing detrimental blueshifts in both absorption and photoluminescence (PL) spectral profiles. In this study, we present a facile one-pot synthetic strategy aimed at impeding the cation exchange process and promoting ZnS shell growth on CIS core QDs. The suppression of both electron-phonon interaction and Auger recombination by the rigid ZnS shell results in CIS/ZnS core/shell QDs that exhibit a wide near-infrared (NIR) emission coverage and a remarkable PL quantum yield of 92.1%. This effect boosts the fabrication of high-performance, QD-based NIR light-emitting diodes with the best stability of such materials so far.

Lattice dynamics and self-trapped excitons in the Cs2SnBr6 double perovskites

Our study delved into the detailed investigation of Cs2SnBr6 double perovskites, focusing on their electrical properties, lattice dynamics, and stability. The direct bandgap for Cs2SnBr6 was estimated to be at 2.93 eV. One external translational mode of the Cs+ lattice with T 2g symmetry and three internal modes of the octahedral with A 1g, E g, and T 2g symmetries are defined by calculated lattice dynamics, experimental micro-Raman scattering. We show a correlation with first-principles calculations, validating using a band-structured electronic approach to understanding the behavior of charge carriers, and electron–phonon interactions in Cs2SnBr6. We propose that electron-vibration interactions result in self-trapped excitons (STEs) displaying significant Stokes shifts (0.508 eV) and broad-spectrum emission. Understanding the behavior of STEs is fundamental for their optoelectronic applications.

Contribution of strong electron-phonon interaction in the transport properties of La0.8Ca0.2Mn0.5Ni0.5O3 system

La0.8Ca0.2Mn0.5Ni0.5O3 NTC (negative thermal coefficient) thermo-sensitive material was prepared using a conventional solid-state reaction method. From the structural results, we found that the material is pure and crystallizes in the orthorhombic structure with a Pnma space group. It is found that the La0.8Ca0.2Mn0.5Ni0.5O3 ceramic can be used as an NTC thermistor compound in specific temperature sensors and attenuators. Based on Holsten's theory, detailed electrical investigations concerning the nature of the activated small polaron hopping mechanism were reported. The temperature dependence of the DC conductance was used to determine the electrical conduction processes that govern the transport properties of La0.8Ca0.2Mn0.5Ni0.5O3. Hence, the DC mechanisms exhibit changes from the variable range hopping at very low temperatures to the non-adiabatic small polaronic hopping at T = 210 K. In the intermediate temperature range, the semiconductor behavior of La0.8Ca0.2Mn0.5Ni0.5O3 was attributed to the contribution of the tunneling transport process. At various temperatures, the conductance spectra were discussed based on Jonscher and Bruce's laws. Contributions of the overlapping-large-polaron-tunneling, the correlated barrier hopping, the quantum mechanical tunneling, and the non-overlapping small polaron tunneling mechanisms to the transport properties were observed in the dispersive region of the conductance spectra. In addition, Summerfield scaling and corrected Summerfield scaling approaches prove that the charge mobility is temperature-dependent. The positive value of the correction parameter α = 1.2 confirms the presence of interactions in the studied sample.

A unified photo-excited GaAs model from ab initio simulation in terahertz regime

In this paper, we present a unified model for gallium arsenide (GaAs) based on ab initio simulations which characterizes its terahertz (THz) properties when excited by optical pump. We use density functional perturbation theory to calculate the dielectric properties of GaAs, and investigate the relaxation time of photo-excited GaAs through electron–phonon interactions. In light of the complexities arising from the mixed absorption mechanisms and the sensitivity of GaAs to laser parameters, we have developed a method that leverages time-dependent density functional theory and Boltzmann transport theory. This approach enables us to establish an accurate relationship between the pump laser intensity and the carrier concentration by introducing the percentage of excited electrons, facilitating the quantitative characterization of GaAs’s response under different optical pump intensities. Using the microscopic material parameters solved by first principles, we develop a unified Drude model to describe the macroscopic electromagnetic responses of photo-excited GaAs. We simulate several reported numerical examples of photo-excited GaAs, including a GaAs wafer and GaAs-based THz metamaterial modulators, to validate the proposed unified model as a reliable approach for predicting the THz properties of GaAs. The good agreement between the simulation and measurement results demonstrates that our model successfully captures the dynamic responses of photo-generated carriers and provides guidance for the design of optoelectronic devices based on GaAs. Furthermore, our modeling approach based on ab initio simulations is free from empirical parameters, providing a solid THz modeling method for other photo-excited semiconductor materials.

Possible charge ordering and anomalous transport in graphene/graphene quantum dot heterostructure

Observations of superconductivity and charge density waves (CDW) in graphene have been elusive thus far due to weak electron–phonon coupling (EPC) interactions. Here, we report a unique observation of anomalous transport and multiple charge ordering phases at high temperatures ( T1∼213K , T2∼325K ) in a 0D−2D van der Waals (vdW) heterostructure comprising of single layer graphene (SLG) and functionalized (amine) graphene quantum dots (GQD). The presence of functionalized GQD contributed to charge transfer with shifting of the Dirac point ∼ 0.05 eV above the Fermi level (ab initio simulations) and carrier density n∼−0.3×1012 cm−2 confirming p-doping in SLG and two-fold increase in EPC interaction was achieved. Moreover, we elucidate the interplay between electron–electron and electron–phonon interactions to substantiate high temperature EPC driven charge ordering in the heterostructure through analyses of magnetotransport and weak anti-localization (WAL) framework. Our results provide impetus to investigate strongly correlated phenomena such as CDW and superconducting phase transitions in novel graphene based heterostructures.

Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation

In this work, we investigate the feasibility of cleaved-gate ferroelectric FET (CG-FeFET) as multi-level cell (MLC) memory devices, by conducting 3-dimensional quantum transport simulations based on time-dependent-Ginzburg–Landau equation, and the non-equilibrium Green’s function method. Our results indicate that CG-FeFET can achieve multi-level operations by utilizing different thicknesses of the ferroelectric layer. We analyze the influence of electron–phonon interaction and also verify that CG-FeFET is robust to noise. Furthermore, we identify the critical role of the spacing between two ferroelectric layers in determining the memory window, considering the effects of polarization cancellation and electrostatic coupling. These findings provide valuable insights into designing stable and reliable nonvolatile memory technologies, which could offer potential solutions for high-density memory requirements.