The dissociative excitation of SiH 4 by collisions with metastable Kr( 3P 2) atoms and (Kr +) * ions has been studied using flowing afterglow and beam apparatus. The emission rate constants of SiH(A 2Δ) and Si * produced from the Kr( 3P 2)/SiH 4 reaction were determined to be (1.0±0.3)×10 −11 and (0.0069±0.0021)×10 −11 cm 3 s −1, respectively. The nascent rovibrational distribution of SiH(A) was estimated from a spectral simulation: N 0: N 1: N 2 = 100 ( T 0 = 1400 K):40 ( T 1 = 1100 K):5 ( T 2 = 800 K). When (Kr +) * ions were involved in the discharge flow, strong Si * lines resulting from electron-ion recombination processes were observed.