Silicon oxide (a-SiO) is one of the most used silicon-based materials in optoelectronic and microelectronic technology. It is well-known that the electronic properties are linked to the material structure, which depends on the deposition technique and on the details of the deposition. Silicon suboxide (a-SiO x 0 < x < 2) layers were prepared by r.f. magnetron-sputtering from a polycrystalline silicon target in a well defined oxidation environment. Optical Emission Spectroscopy (OES) was employed to study the plasma used in SiO x depositions. Theoretical calculations performed in the frame of electron impact excitation mechanism for argon and atomic oxygen corroborated with electron impact dissociation of the molecular oxygen have shown the strong influence of the electron temperature on the rate coefficients of photons' production. Correlation functions between the OES signals assigned to silicon and oxygen atoms from plasma (gas phase) and the SiO x layer composition (infrared and energy dispersive X-ray investigated) have been found. Based on these functions, the OES plasma monitoring is proposed as a tool to control in-situ and in direct time the SiO x layer composition.