Electron Gas Research Articles

Ce-doped ZnO nanonails synthesized by a simple thermal evaporation method for photocatalytic degradation

One-dimensional (1D) nanomaterials have garnered significant scientific and technological attention due to their potential applications in electronics devices, gas sensing, energy conversion, and photocatalysis. However, the development of a simple and low-cost technique for 1D nanostructure synthesis remains a challenge. The doping of ZnO nanostructures has proven to be an effective way to improve their internal properties. In this work, one-dimensional ZnO and Ce-doped ZnO nanorods and nanonails were synthesized by a simple thermal evaporation method using different weight ratios of ZnS and CeO2 precursor powders in a catalyst-free process. The effects of cerium doping concentration on the structural, morphological, and optical properties of the as-prepared samples were investigated. XRD analysis confirmed that the crystal structure was converted from the cubic ZnS phase to the hexagonal ZnO phase with increasing annealing temperatures. The UV–Vis spectra showed that the optical absorption edge of Ce-doped ZnO samples was slightly red-shifted. Additionally, the band gap energy decreases with increasing cerium concentration. SEM images showed that the morphology of the structures obtained changed from nanorods to nanonails as the Ce content increased. The incorporation of Ce ions into the ZnO matrix has been successfully confirmed by HRTEM, Raman, and EDX analysis. Photocatalytic activity studies showed that Ce-doped ZnO samples exhibited significantly enhanced photocatalytic performance compared to pure ZnO for the degradation of rhodamine B under UV radiation. These results may suggest the use of heterogeneous photocatalysis as an efficient, cheap, and environment-friendly alternative for the removal of pollutants from water and the use of Ce-doped ZnO as a promising candidate.

Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer

Abstract In this paper, we propose an enhanced superjunction AlGaN/GaN vertical current aperture vertical electron transistor (CAVET) that integrates a novel hybrid InGaN/AlN/InGaN current blocking layer (CBL) situated above the P-column, directly beneath the channel. The incorporation of InGaN substantially elevates the device’s saturation output current by introducing a subchannel beneath the AlGaN/GaN heterojunction conducting channel. Nonetheless, the introduction of AlN engenders a two-dimensional hole gas of opposite polarization direction via the GaN/AlN heterojunction, which aids in depleting the two-dimensional electron gas within the channel, thereby mitigating the issue of negative threshold voltage (V th) bias occasioned by the subchannel introduced by InGaN. The outcomes demonstrate that the maximum saturation output current (I d) for the proposed architecture is 361.5 mA mm−1, with a V th of 1.63 V, marking increases of 98.6% and 0.08% over the traditional superjunction CAVET, respectively. Simultaneously, the breakdown voltage (V br) of the designed device is recorded at 12 064 V, and the specific on-resistance (R on,sp) is 6.45 Ω·mm, showcasing a enhancement figure of merit of 32.9% in comparison to the traditional superjunction CAVET.

Enhanced capability of model fitting to nuclear level density and heat capacity: testing on 93−98Mo nuclei

We propose an improved fitting approach that improves reliability in studying the nuclear level density (NLD) and thermodynamic quantities. The proposed method, which relies on the fact that experimental fluctuations or outliers, if they exist, should not be involved in the fitting process, is validated with a set of data artificially generated with anomalous data points being intentionally inserted. In order to showcase the advantages of the proposed technique, we have applied it to re-investigate the back-shifted Fermi gas (BSFG) level density parameters and thermodynamic quantities, particularly the heat capacities, of 93−98Mo isotopes. We have found that the range of values for the level density parameter of 93Mo (approximately from 8.5 to 9.0 MeV−1) is notably smaller than that obtained for the other isotopes of Mo (approximately from 10.5 to 11.5 MeV−1). This observation is different from previous predictions, in which the values of level density parameter of all Mo isotopes are in the same range. This is because among the Mo isotopes under examination, 93Mo (N = 51 neutrons) has the smallest number of valence neutrons, namely only a single neutron away from the closed N = 50 shell. In addition, thanks to the proposed method, we have discussed the effects of data fluctuations on the BSFG NLDs and thermodynamic quantities of 93−98Mo isotopes, from which our recommendation for future works is announced. On top of that, we should notice that the proposed approach can be further applied to any work involving the fitting of a phenomenological model to empirical data.

Fully polarized Fermi systems at finite temperature.

We propose a simple model of an interacting, fully spin-polarized Fermi gas in dimensions d=2 and d=3, and derive the approximate expression for the energy spectrum and the corresponding formula for the Helmholtz free energy. We analyze the thermodynamics of the system and find the lines of first-order phase transitions between the low- and high-density phases terminating at critical points. The properties of the corresponding phase diagrams are qualitatively different for d=2 and 3, and sensitively depend on the interparticle attraction, which marks a departure from the standard van der Waals theory. The differences originate from the Pauli exclusion principle and are embedded in the fermionic nature of the system under study.

Unveiling the tunable electronic, optoelectronic, and strain-sensitive gas sensing properties of Janus ZrBrCl: Insights from DFT study

Janus monolayers materials exhibit extraordinary physical and chemical properties because of crystal field changes caused by their asymmetric structures. Here, we investigate the electronic, switching, optoelectronic, and strain-sensitive gas-sensing properties of a Janus ZrBrCl monolayer via density-functional theory and the nonequilibrium Green’s function methods. The electronic properties can be tuned by applying biaxial strain and electric fields. In particular, the band gap can be changed from indirect to direct via applied a + 8 % biaxial tensile strain. It can be transformed from a semiconductor to a metal with an applied −14 % biaxial compressive strain, with a 1011 switching ratio. In addition, a biaxial strain and an electric field can modulate visible light absorption and photocurrents. Under a −12 % biaxial compressive strain, the absorption coefficient increased to 5.26 × 105 cm−1 from the intrinsic 4.08 × 105 cm−1. Across biaxial strains from −4% to + 4 %, the photocurrent density peak displayed red and blue shifts, respectively, with increasing tensile and compressive strains. NH3, NO2, and NO physically adsorb on the Br side of the ZrBrCl monolayer. Maximum gas sensitivity values of a ZrBrCl sensor are 52 % in the zigzag direction and 21 % in the armchair direction. After application of the −14 % biaxial strain, the maximum values respectively increased to 76 % and 179 %. The biaxial compressive strain-sensitive gas-sensing properties are driven by changes in the electrostatic potential difference between the Br and Cl surfaces. These findings indicate promising candidate materials for high-performance switching and optoelectronic devices, and also provide a strategy for improved gas sensors.

Improving spin manipulation in HgTe/CdTe quantum wells via electrical means

We present a theoretical investigation of electron transport properties through a two-dimensional electron gas (2DEG) HgTe/CdTe quantum wells (QWs) heterostructure that incorporate two Rashba-modulated regions. Our study demonstrates that the transmission can be effectively tuned by varying the Rashba spin-orbit coupling (RSOC) strength, Fermi energy, and electrical voltage. Efficient spin-conserving and spin-flip transmission can be achieved by adjusting the RSOC modulation strength. Furthermore, fully spin-polarized spin or current transmission with PZ=±1, as well as complete spin-flip conversion with a rate of Tsf=1 are attained by fine-tuning the amplitudes of the two Rashba modulations using gate voltage or adjusting the RSOC strength. This electrical mechanism provides a convenient approach to electrically manipulate both spin and charge currents, which holds promise for low-power device applications.

Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy

We report on the growth of AlPN on GaN/sapphire templates by metalorganic vapor phase epitaxy using tertiarybutylphosphine (tBP) and NH3 as group-V precursors. P is easy to incorporate into the group-III lattice site, forming PAl anti-site defects and shrinking lattice constants that are even beyond AlN since Al is larger than P. We found that higher temperatures favor P incorporation on the N-sublattice, forming AlPyN1−y, while growth temperatures below 1000 °C result in dominant P incorporation on the Al-sublattice, forming PAl anisites. Similarly, larger NH3 flows stabilize GaN, leading to flat interfaces, but favor the formation of PAl. Furthermore, the P incorporation into AlPyN1−y is non-linear. At very low tBP flows, it initially increases to reach a maximum. Further increasing the tBP flow increases mostly the incorporation of P on the Al-sublattice, and the c-lattice constant decreases again. This leaves a small window of low V/III ratios below 5 and low P/N ratios of 1% or smaller, leading up to ∼4% P incorporation at typical growth temperatures of GaN. However, at such low V/III ratios, GaN is not stable even with N2 carrier gas and requires optimized switching sequences to minimize its decomposition and preserve flat interfaces. Eventually, a 10 nm coherent layer of AlP0.01N0.99 could be reproducibly grown on top of GaN channels with a smooth surface, an abrupt AlPN/GaN interface, and a two-dimensional electron gas with an electron mobility of ∼675 cm2/V s and a sheet carrier density of 1.5 × 1013 cm−2 at room temperature.

Contact potential difference in the absence of current through the sample in the quantum hall effect regime in InGaAs/InAlAs heterostructure

The paper presents experimental results of the appearance of voltage at potential contacts in the absence of an external current through the sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of voltage is associated with the non-equivalence of edge current in potential contact areas in a magnetic field in a system with a two-dimensional electron gas.

Integrating NiSe2-MoSe2 heterojunctions with N-doped porous carbon substrate architecture for an enhanced electrocatalytic water splitting device

The development of sustainable energy technologies relies on the exploitation of efficient and durable electrocatalysts for water splitting at high current densities. Our work presents a novel bifunctional catalyst, denoted as NM@NC/CC, which combines the benefits of NiSe2-MoSe2 heterojunctions with nitrogen-enriched porous carbon derived from metal-organic frameworks (MOFs). The integration of these components is designed to harness their combined advantages, which include enhanced electron transfer, improved mass and gas evolution dynamics, and an increased number of catalytically active sites. These features collectively optimize the energetics for both the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). As a result, the catalyst facilitates rapid kinetics for the overall water-splitting process. The NM@NC/CC demonstrates low overpotentials, requiring only 91 mV for the HER and 280 mV for the OER to reach a current density of 10 mA cm−2. Even at higher current densities of 100 mA cm−2 for HER and 50 mA cm−2 for OER, the overpotentials are only 159 mV and 350 mV, respectively. Additionally, a two-electrode setup using this catalyst achieves a current density of 10 mA cm−2 with a minimal cell voltage of 1.56 V. The insights gained from this study will contribute to the advancement of electrocatalysts for energy conversion technologies.

Thin film deposition of organic-inorganic quinoline-tin dioxide p-n junction for optoelectronic devices

Tin dioxide (SnO2) is an oxide semiconductor with n-type characteristics, with high transparency in the UV–Vis, where the donors are usually associated with oxygen vacancies and interstitial tin ions. Quinoline derivatives (QD) are usually p-type semiconductors with emission in the blue range. We report photo-induced properties of the QD 4-(6-(diethylamino)-4-phenylquinolin-2-yl)benzoic acid and the combination with the inorganic semiconductor oxide SnO2, both layers in the form of thin film, which forms a heterostructure. Thin film is a very convenient format for integration in optoelectronics. Emission of the QD takes place in blue range (470–485 nm) and depends on the solvent when in solution, being used acetone and tetrahydrofuran (THF). However, when in the form of thin film, it does not depend on the solvent. Concerning the heterostructure, it is explored under distinct device architecture: 1) combination in a transport profile perpendicular to the films (transverse contacts) leading to a rectifying behavior similar to a p-n junction, which is evidence of the p-type-like electrical behavior of the QD; 2) in parallel conduction profile, where there seems to exist some sort of interfacial phenomenon similar to a two-dimensional electron gas (2-DEG), a property that can be explored in transparent high-mobility transistors.

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

AbstractOwing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging. In this study, it is demonstrated that by using a 2D electron gas (2DEG) as the bottom electrode (BE) in a vertical‐switching CBRAM (V‐CBRAM), filament formation and rupture can be effectively managed and the tunnel gap distance created by partial filament formation can be adjusted. The 2DEG BE induces partial filament formation by limiting the number of electrons required for this process in the V‐CBRAM device, as verified via current fitting to the quantum point contact model. Varying the electron concentration and activation energy for electrons trapped in the 2DEG, when paired with various programming voltages, leads to transitions in the device resistance state via changes in the distance of the tunnel gap. This tunnel‐gap‐tunable 2DEG V‐CBRAM device, which exhibits superior switching uniformity, can be employed for nonvolatile memory applications in the sub‐G0 conductance regime, such as 3‐bit multilevel cells and selector‐less memory.

Two-Term Asymptotics of the Exchange Energy of the Electron Gas on Symmetric Polytopes in the High-Density Limit

We derive a two-term asymptotic expansion for the exchange energy of the free electron gas on strictly tessellating polytopes and fundamental domains of lattices in the thermodynamic limit. This expansion comprises a bulk (volume-dependent) term, the celebrated Dirac exchange, and a novel surface correction stemming from a boundary layer and finite-size effects. Furthermore, we derive analogous two-term asymptotic expansions for semi-local density functionals. By matching the coefficients of these asymptotic expansions, we obtain an integral constraint for semi-local approximations of the exchange energy used in density functional theory.

ScAlInN/GaN heterostructures grown by molecular beam epitaxy

Rare-earth (RE) elements doped III-nitride semiconductors have garnered attention for their potential in advanced high-frequency and high-power electronic applications. We report on the molecular beam epitaxy of quaternary alloy ScAlInN, which is an encouraging strategy to improve the heterointerface quality when grown at relatively low temperatures. Monocrystalline wurtzite phase and uniform domain structures are achieved in ScAlInN/GaN heterostructures, featuring atomically sharp interface. ScAlInN (the Sc content in the ScAlN fraction is 14%) films with lower In contents (less than 6%) are nearly lattice matched to GaN, exhibiting negligible in-plane strain, which are excellent barrier layer candidates for GaN high electron mobility transistors (HEMTs). Using a 15-nm-thick Sc0.13Al0.83In0.04N as a barrier layer in GaN HEMT, a two-dimensional electron gas density of 4.00 × 1013 cm−2 and a Hall mobility of 928 cm2/V s, with a corresponding sheet resistance of 169 Ω/□, have been achieved. This work underscores the potential of alloy engineering to adjust lattice parameters, bandgap, polarization, interfaces, and strain in emerging RE-III-nitrides, paving the way for their use in next-generation optoelectronic, electronic, acoustic, and ferroelectric applications.

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Ultra-thin high-Al content barrier layers can enable improved gate control and high-frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the precise composition control is very challenging. In this work, we investigate the compositional profiles of AlxGa1−xN/GaN HEMT structures with targeted Al content in the barrier layer, x = 0.50, 0.70, and 1, and thickness in the sub-10 nm range in correlation with the two-dimensional electron gas (2DEG) properties. The HEMT structures are grown by metal-organic chemical vapor deposition on SiC. The maximum Al content in the barrier layer, experimentally determined by scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, is found to be lower than that intended and the deviations from the designed structures increase progressively with increasing x. Compositionally sharp interface between GaN and Al0.46Ga0.54N and box-like Al profile is achieved for intended x∼0.50 while pronounced Al grading is found in the samples with intended x of 0.70 and 1, with a maximum Al content of 0.78 reached for the HEMT structure with intended AlN barrier layer. The impact of the experimentally determined Al profiles on the 2DEG properties, obtained by contactless and electrical Hall effect measurements and coupled with self-consistent solution of the Poisson–Schrödinger equation, is evaluated and discussed. It is shown that the observed deviations from the intended Al profiles have a negative effect on the 2DEG confinement and result in reduced mobility parameters, which have significant implications for the implementation of high-Al content AlGaN/GaN structures in high-frequency devices.

The dominant white color trait of the melon fruit rind is associated with epicuticular wax accumulation.

Microscopic analyses and chemical profiling demonstrate that the white rind phenotype in melon fruit is associated with the accumulation of n-alkanes, fatty alcohols, aldehydes and wax esters. Serving as an indicator of quality, the rind (or external) color of fruit directly affects consumer choice. A fruit's color is influenced by factors such as the levels of pigments and deposited epicuticular waxes. The latter produces a white-grayish coating often referred to as "wax bloom". Previous reports have suggested that some melon (Cucumis melo L.) accessions may produce wax blooms, where a dominant white rind color trait was genetically mapped to a major locus on chromosome 7 and suggested to be inherited as a single gene named Wi. We here provide the first direct evidence of the contribution of epicuticular waxes to the dominant white rind trait in melon fruit. Our light and electron microscopy and gas chromatography-mass spectrometry (GC-MS) comparative analysis of melon accessions with white or green rinds reveals that the rind of melon fruit is rich in epicuticular waxes. These waxes are composed of various biochemical classes, including fatty acids, fatty alcohols, aldehydes, fatty amides, n-alkanes, tocopherols, triterpenoids, and wax esters. We show that the dominant white rind phenotype in melon fruit is associated with increased accumulation of n-alkanes, fatty alcohols, aldehydes and wax esters, which are linked with the deposition of crystal-like wax platelets on their surfaces. Together, this study broadens the understanding of natural variation in an important quality trait of melon fruit and promotes the future identification of the causative gene for the dominant white rind trait.

Non-classical correlations and coherence in a two-dimensional electron gas under the influence of Rashba spin–orbit coupling

This investigation delves into the dynamics of quantum correlations and coherence within a two-dimensional electron gas (2DEG) system, taking into account the influence of Rashba spin–orbit coupling (SOC). We utilize metrics such as logarithmic negativity ([Formula: see text]), local quantum uncertainty (LQU ([Formula: see text])), and relative entropy of coherence ([Formula: see text]) to specifically assess these quantum resources among electron spins within non-interacting electron gases. Our study investigates how the separation distance (R) between electrons and the intensity of Rashba SOC ([Formula: see text]), impact the behavior of quantum properties within the 2DEG system. We find that specific strengths of Rashba SOC can effectively regulate quantum correlations and coherence within this system. Particularly significant is our observation that optimal quantum indicators emerge when electron proximity is minimized, underscoring the substantial influence of electron distance on quantum characteristics. Conversely, as electron separation increases, these quantum metrics diminish. Therefore, by adjusting the Rashba parameter, we can enhance the resilience of these quantum measurements against increasing electron separations, providing valuable insights into the potential for controlling and manipulating quantum behavior in similar 2DEG systems.

Comparative characterizations of plant and mineral dye as potential photosensitizer in Dye-Sensitized Solar Cell

The advent of dye-sensitized solar cells (DSSC) has expansively seen more studies as an alternative to silicon-based and thin-film solar cells due to their simple structure and relatively low production cost. In dye-sensitized solar cells, the dye is one of the major components for high power conversion efficiencies. The extracted dyes were characterized by powder x-ray diffraction, x-ray fluorescence, Scanning electron microscopy, UV-visible spectroscopy, and Gas Chromatography-Mass spectrometry analysis. The structure of the mineral dye contains constituents that enhance better absorption of solar radiation for use in a Dye-Sensitized Solar Cell (DSSC). The calcium and iron content of the mineral dye studied as revealed by the mineralogical analysis done using the powder x-ray diffraction (XRD) and the x-ray fluorescence (XRF) suggest this. These metals serve as bounding complexes to other organic components in the dye, like in the case of Ruthenium complexes dye for efficient absorption of solar radiation, especially in the visible light region. The functional groups present in the dye also confirm what favors good absorption of solar radiation for DSSC application. The Organic chemical compositions present in the mineral dye which were obtained by the Gas Chromatography-Mass spectrometry analysis also confirm the functional groups of carbonyl, Amine, and hydroxyl revealed by FTIR, which were responsible for solar radiation absorption. There are strong absorption narrow bands in the visible region with peaks at around 424 nm (2.903 a.u) and 486 nm (2.973 a.u). Optical band gaps of 1.66 eV and 2.27 eV for the mineral dye and plant dye respectively, were obtained. The properties of the dyes studied give potential substitutes to the relatively expensive ruthenium-based dyes for use in DSSC fabrication.

Quasi-boson approximation yields accurate correlation energy in the 2D electron gas

Quasi-boson approximation yields accurate correlation energy in the 2D electron gas

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

Localization and other properties of electronic states in a semiconductor revealed by their response to surface doping and band-bending potential

Using photoelectron spectroscopy (PES), we study InAs(001) and InAs(110) surfaces, doped with Te atoms to induce strong band-bending phenomena and a formation of two-dimensional electron gases (2DEGs). The band structure of the 2DEGs as well as the coexisting 3D bulk electronic structure are investigated. We discuss several schemes to estimate the band-bending potentials at surfaces by PES methods, appropriate in different situations, e.g. in the presence of a significant band tailing. We use the Schroedinger–Poisson scheme as well as the Thomas–Fermi method to model the band-bending potential profiles and the 2DEG band energies. For the InAs crystal we find that the valence bands investigated with PES closely follow the band-bending potential which evidences that valence electronic states are localized to within few nm. In contrast, the conduction band is entirely insensitive to the band-bending potential, evidencing that the extent of electronic states within this band is at least 103nm.