The Schottky diode with a thin Al barrier layer is examined as an electron bombarded semiconductor (EBS) anode for the microfield emitter array (micro-FEA) triode. The electrons from FEA accelerated to 4 keV can be multiplied over 1000 times at an anode. The high frequency performances of the micro-FEA triode with EBS anode are estimated. It is shown that the planer triode with lateral thin film emitter and EBS anode promises over 100 GHz operation.