Abstract
Thorium oxide on iridium substrates has been investigated as an electron emitter for electron bombarded semiconductor (EBS) devices, a new type of vacuum tube-solid state hybrid. Thermionic emission measurements and evaporation rate studies using quadrupole and Auger techniques show the low evaporation rate/temperature properties of the emitter to be particularly suited to this application. Improvements in semiconductor diode reverse breakdown as well as semiconductor current gain characteristics of the EBS device have been demonstrated when compared to use with standard oxide cathode emitters. Resistance to air exposure and poisoning the ThO2 on Ir is also useful in demountable applications of EBS device development.
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